Resistive Switching Properties of Atomic Layer Deposited ZrO2-HfO2 Thin Films

Abstract

In this work we study the resistive switching properties of ZrO2-HfO2 based Metal-Insulator-Metal (MIM) devices. We observed different intermediate states and an overall good repetitiveness, expressed in terms of DC and AC parameters. Thin films consisting of mixtures of ZrO2 and Hf02 were grown by atomic layer deposition (ALD) on planar Si(100) and TiN substrates by alternately applying certain amounts of constituent binary oxide growth cycles. The experimental results revealed that zirconium oxide rich films provide better resistive switching behavior than pure zirconium oxide or hafnium oxide rich layers.