A. Jiménez, A. Datas, D. Canteli, D. Munoz-Martin, M. Morales, C. Molpeceres, C. del Cañizo
{"title":"Laser-Diffused P Emitters for Ge TPV Cells","authors":"A. Jiménez, A. Datas, D. Canteli, D. Munoz-Martin, M. Morales, C. Molpeceres, C. del Cañizo","doi":"10.1109/CDE.2018.8597048","DOIUrl":null,"url":null,"abstract":"In this article we present the experimental optimization of thermophotovoltaic (TPV) cells fabricated by laser-diffused phosphorous emitters on p-Ge substrates. First, simulations done by PC1D software have helped to guide in the optimization process. Next, the emitter formation has been carried out experimentally by a fast and low thermal budget process based on excimer laser annealing in the melting regime of a phosphosilicate sol-gel layer deposited by spin coating. The n/p junction created has been characterized by Secondary Ion Mass Spectrometry (SIMS) and used to fabricate a TPV cell as a proof of concept.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"254 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 Spanish Conference on Electron Devices (CDE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CDE.2018.8597048","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this article we present the experimental optimization of thermophotovoltaic (TPV) cells fabricated by laser-diffused phosphorous emitters on p-Ge substrates. First, simulations done by PC1D software have helped to guide in the optimization process. Next, the emitter formation has been carried out experimentally by a fast and low thermal budget process based on excimer laser annealing in the melting regime of a phosphosilicate sol-gel layer deposited by spin coating. The n/p junction created has been characterized by Secondary Ion Mass Spectrometry (SIMS) and used to fabricate a TPV cell as a proof of concept.