Fabrication Process of Non-Linear Planar Diodes Based on GaN

Abstract

In this work we report on the design, fabrication and characterization of Terahertz detectors based on the power handling properties of Gallium Nitride (GaN) and the Self Switching Diode (SSD) geometry. SSDs, featuring asymmetric channels defined by etching L-shape trenches, have shown excellent properties as direct THz detectors due to their nonlinear I-V curve. We have designed and fabricated SSDs integrated with bow-tie antennae for sub-terahertz radiation detection in free space and also with coplanar waveguide accesses to be able to perform the RF characterization of the devices.