石墨烯场效应管的隧穿时间:从基础物理到实际工程

M. Villani, D. Pandey, E. Colomés, X. Oriols, Z. Zhan
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引用次数: 0

摘要

由于其巨大的费米速度,石墨烯有望在未来的(小信号)射频电子学中发挥重要作用。电子的克莱因隧穿次数与石墨烯器件的截止频率之间的关系不明显。我们在论文中认为,基于轨迹的波希曼方法提供了一个非常自然的框架来量化克莱因隧穿时间,因为它不仅能够区分透射电子和反射电子,而且能够区分在势阱中停留时间的反射电子和不停留时间的反射电子。特别地,我们研究了由两个金属触点之间的势垒构成的双端石墨烯器件中电子的克莱因隧道时间。这项工作的主要结论是,高石墨烯迁移率大致独立于有源器件区域克莱因隧道现象的存在。最后,讨论了电子器件中穿越(隧穿)时间与截止频率之间的关系。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Tunneling Times in Graphene FET: From Fundamental Physics to Practical Engineering
Because of its large Fermi velocity, graphene is expected to play an important role in the future of (small signal) radio frequency electronics. The connection between the Klein tunneling times of electrons and cut-off frequencies of graphene devices is not obvious. We argue in this paper that the trajectory-based Bohmian approach gives a very natural framework to quantify Klein tunneling times because of its ability to distinguish, not only between transmitted and reflected electrons, but also between reflected electrons that spend time in the barrier and those that do not. In particular, we study Klein tunneling times for electrons in a two-terminal graphene device constituted by a potential barrier between two metallic contacts. The main conclusion of this work is that the high graphene mobility is roughly independent of the presence of Klein tunneling phenomena in the active device region. Finally, the connection between transit (tunneling) times and cut-off frequencies in electronic devices is discussed.
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