基于氮化镓的非线性平面二极管的制备工艺

2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI:10.1109/CDE.2018.8596786

J. A. Novoa-López, Y. Lechaux, J. A. Delgado-Notario, V. Cierico, E. Diez, H. Sánchez-Martín, B. G. Vasallo, I. Íñiguez-de-la-Torre, J. Mateos, S. Pérez, T. González

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引用次数: 0

摘要

在这项工作中，我们报告了基于氮化镓(GaN)的功率处理特性和自开关二极管(SSD)几何形状的太赫兹探测器的设计，制造和表征。由于固态硬盘的非线性I-V曲线，它具有通过刻蚀l形沟槽定义的非对称通道，作为直接太赫兹探测器表现出优异的性能。我们设计并制造了集成领结天线的ssd，用于在自由空间中进行次太赫兹辐射检测，并具有共面波导访问，以便能够执行设备的RF特性。

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Fabrication Process of Non-Linear Planar Diodes Based on GaN

In this work we report on the design, fabrication and characterization of Terahertz detectors based on the power handling properties of Gallium Nitride (GaN) and the Self Switching Diode (SSD) geometry. SSDs, featuring asymmetric channels defined by etching L-shape trenches, have shown excellent properties as direct THz detectors due to their nonlinear I-V curve. We have designed and fabricated SSDs integrated with bow-tie antennae for sub-terahertz radiation detection in free space and also with coplanar waveguide accesses to be able to perform the RF characterization of the devices.

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2018 Spanish Conference on Electron Devices (CDE)

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