Journal of Crystal Growth最新文献

{"title":"Study on the twinning in LEC-GaSb crystals","authors":"Weimin Dong ,&nbsp;Henghao Feng ,&nbsp;Xin Zhao ,&nbsp;Linwei Song ,&nbsp;Jin Yang ,&nbsp;Dazheng Deng ,&nbsp;Yingjie Sun ,&nbsp;Biwen Duan ,&nbsp;Shufen Li ,&nbsp;Deliang Chu ,&nbsp;Qianwen Peng ,&nbsp;Yumin Li ,&nbsp;Jincheng Kong ,&nbsp;Jun Zhao","doi":"10.1016/j.jcrysgro.2025.128448","DOIUrl":"10.1016/j.jcrysgro.2025.128448","url":null,"abstract":"<div><div>Twinning is a critical factor limiting the size and yield of III-V semiconductor single crystals. In this work, the &lt; 100 &gt; GaSb crystals were grown by the liquid-encapsulated Czochralski (LEC) method, and the influences of dislocations and {111} facets on twinning were studied. During the seeding and shouldering, the low-angle grain boundaries resulting from dislocation multiplication typically induce twinning or polycrystallization. Moreover, when growing &lt; 100 &gt; GaSb crystals, twinning tends to occur preferentially on the (<span><math><mrow><mover><mrow><mtext>1</mtext></mrow><mrow><mo>¯</mo></mrow></mover><mover><mrow><mtext>1</mtext></mrow><mrow><mo>¯</mo></mrow></mover><mover><mrow><mtext>1</mtext></mrow><mrow><mo>¯</mo></mrow></mover></mrow></math></span>)Sb plane. First-principles calculations revealed that the stacking fault energy (SFE) of the (<span><math><mrow><mover><mrow><mtext>1</mtext></mrow><mrow><mo>¯</mo></mrow></mover><mover><mrow><mtext>1</mtext></mrow><mrow><mo>¯</mo></mrow></mover><mover><mrow><mtext>1</mtext></mrow><mrow><mo>¯</mo></mrow></mover></mrow></math></span>)Sb plane (25.36 mJ/m²) is much smaller than that of the (111)Ga plane (54.25 mJ/m²), indicating a higher propensity for twin nucleation on the (<span><math><mrow><mover><mrow><mtext>1</mtext></mrow><mrow><mo>¯</mo></mrow></mover><mover><mrow><mtext>1</mtext></mrow><mrow><mo>¯</mo></mrow></mover><mover><mrow><mtext>1</mtext></mrow><mrow><mo>¯</mo></mrow></mover></mrow></math></span>)Sb plane, thereby confirming the experimental observations. The experimental results show that at the solid–liquid growth interface, the supercooling(Δ<em>T</em>) near the (<span><math><mrow><mover><mrow><mtext>1</mtext></mrow><mrow><mo>¯</mo></mrow></mover><mover><mrow><mtext>1</mtext></mrow><mrow><mo>¯</mo></mrow></mover><mover><mrow><mtext>1</mtext></mrow><mrow><mo>¯</mo></mrow></mover></mrow></math></span>)Sb plane is significantly higher than on the (111)Ga plane, which leads to a considerably greater probability of twinning nucleation occurring on the (<span><math><mrow><mover><mrow><mtext>1</mtext></mrow><mrow><mo>¯</mo></mrow></mover><mover><mrow><mtext>1</mtext></mrow><mrow><mo>¯</mo></mrow></mover><mover><mrow><mtext>1</mtext></mrow><mrow><mo>¯</mo></mrow></mover></mrow></math></span>)Sb plane. The abrupt increase in Δ<em>T</em> caused by local temperature fluctuations may be the primary reason for twinning in &lt; 100 &gt; GaSb crystals.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"676 ","pages":"Article 128448"},"PeriodicalIF":2.0,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145682803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural and optical characterization of highly homogeneous lithium niobate tantalate single-crystal solid solutions","authors":"Umar Bashir ,&nbsp;Saud Bin Anooz ,&nbsp;Martin Schmidbauer ,&nbsp;Lukas M. Eng ,&nbsp;Matthias Bickermann ,&nbsp;Steffen Ganschow","doi":"10.1016/j.jcrysgro.2025.128422","DOIUrl":"10.1016/j.jcrysgro.2025.128422","url":null,"abstract":"<div><div>The compositional homogeneity of nominally LiNb_1−xTa_xO₃ (x = 0.45) single crystals is studied using micro-X-ray fluorescence and high-resolution X-ray diffraction. Highly homogeneous regions are reported with less than 1 % Ta variation over areas as large as 4 × 4 mm² in z-cut specimens. To our knowledge, this represents the most detailed study of homogeneity in lithium niobate tantalate (LNT) solid solutions to date, establishing a quantitative benchmark for future studies. Spectroscopic ellipsometry shows a decreasing refractive index and blue-shift in optical absorption with increasing Ta content, while the dielectric response remains structurally consistent. These investigations establish a quantitative benchmark for selecting compositionally homogeneous LNT crystals suitable for applications such as second-harmonic generation, Raman spectroscopy, piezoresponse force microscopy, and domain wall conductivity.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"676 ","pages":"Article 128422"},"PeriodicalIF":2.0,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145600614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A study on solid–liquid interface shape optimization and dislocation suppression for 4.5-inch InP single crystal growth based on vertical gradient freezing technique","authors":"Zhuochen Duan ,&nbsp;Hua Wei ,&nbsp;Dingzhang Wu ,&nbsp;Junhong Lv ,&nbsp;Tinglong Liu ,&nbsp;Xueqiang Wu ,&nbsp;Hanbao Liu ,&nbsp;Feng Lin ,&nbsp;Jie Yang ,&nbsp;Feng Qiu ,&nbsp;Shikun Pu ,&nbsp;Feng Hui ,&nbsp;Chong Wang","doi":"10.1016/j.jcrysgro.2025.128458","DOIUrl":"10.1016/j.jcrysgro.2025.128458","url":null,"abstract":"<div><div>Owing to its advantages of a small axial temperature gradient and high-precision thermal field control, the Vertical Gradient Freeze (VGF) method has emerged as a mainstream technique for industrial InP single crystal growth. However, during the growth of large-sized InP crystal via VGF, defects such as twins and dislocations frequently form at the shouldering stage due to rapid crystallization area expansion, non-uniform latent heat release, and loss of control over the solid–liquid interface shape at the crystallization front. This study establishes a finite element-based physical model for 4.5-inch InP single crystal growth under unsteady thermal fields. Based on systematic growth parameter regulation and heat-transfer structure optimization, the evolution of the solid–liquid interface shape is investigated during the whole growth process. Calculated results indicate that for large-diameter crystals, the key to achieving a planar solid–liquid interface lies in adopting a slower growth rate and a lower axial temperature gradient. Under current heat exchange conditions, the crystal growth interface undergoes a dynamic evolution along the ingot axis, typically transitioning from slightly convex to relatively flat, and finally to slightly concave. Consequently, a set of thermal field structure for optimizing axial heat distribution are designed and implemented in single-crystal growth experiments. Our experimental results demonstrate consistency with the simulation, showing that the solid–liquid interface maintains a prolonged slightly convex shape in shouldering growth then shifts to a slightly concave profile in equal-diameter growth Consequently, the statistical probability of twin formation in these InP ingots undergone heat-field optimization decreases by approximately 20 % compared to those with the current-adopted heat-field.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"676 ","pages":"Article 128458"},"PeriodicalIF":2.0,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145733899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Solid-phase crystallization of amorphous Ga2O3/sapphire(0001) thin films monitored using in-situ multimodal X-ray probe technique","authors":"Daseul Ham ,&nbsp;Seonghyun Han ,&nbsp;Su Yong Lee ,&nbsp;Jihye Seo ,&nbsp;Do Young Noh ,&nbsp;Hyon Chol Kang","doi":"10.1016/j.jcrysgro.2025.128457","DOIUrl":"10.1016/j.jcrysgro.2025.128457","url":null,"abstract":"<div><div>We investigated the crystallization behavior and structural evolution of amorphous Ga₂O₃ thin films deposited on sapphire (0001) substrates via solid phase epitaxy (SPE) using a synchrotron-based <em>in-situ</em> multimodal X-ray probe station. Real-time X-ray diffraction (XRD) and electrical conductance measurements during post-annealing revealed that crystallization into the α-Ga₂O₃ phase begins at approximately 500 °C, accompanied by a marked increase in conductance owing to thermally activated carrier transport. High-resolution XRD confirmed the formation of a high-quality α-Ga₂O₃ film with the <em>c</em>-axis oriented along the surface normal and fully relaxed lattice parameters in the in-plane and out-of-plane directions. Azimuthal angle scans revealed six-fold symmetry, confirming epitaxial in-plane alignment between the α-Ga₂O₃ film and sapphire (0001) substrate. Rocking curve analysis yielded dislocation densities of ∼1.07 × 10⁸ (screw) and ∼4.34 × 10⁹ cm⁻² (edge), corresponding to a total threading dislocation density of approximately 4.45 × 10⁹ cm⁻², which is comparable to previously reported values for directly grown α-Ga₂O₃ films. These findings demonstrate that SPE is a promising alternative to conventional epitaxy for producing high-quality α-Ga₂O₃ thin films. This approach enables phase-selective crystallization with excellent structural quality, without the need for high-temperature deposition or complex substrate engineering, thereby offering a viable pathway for integration into thermally sensitive device platforms.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"676 ","pages":"Article 128457"},"PeriodicalIF":2.0,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145733901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Melt crystallization of metacetamol polymorphs using vertical Bridgman method","authors":"Architha Natarajan,&nbsp;Srinivasan Karuppannan","doi":"10.1016/j.jcrysgro.2025.128428","DOIUrl":"10.1016/j.jcrysgro.2025.128428","url":null,"abstract":"<div><div>The crystallization behavior of metacetamol polymorphs from the melt was systematically investigated using a custom-designed Vertical Bridgman (VB) furnace. By varying the ampoule translation rate between 1.5 and 24 cm/min, corresponding to cooling rates of approximately 3.6 to 58.5 °C/min, distinct polymorphic outcomes were observed. Form I emerged predominantly at both low (3.6–7.2 °C/min) and high (13.5–58.5 °C/min) cooling rates, whereas the metastable form II was confined to a narrow intermediate cooling-rate window (7.3–13.4 °C/min). These findings underscore the critical influence of cooling rate on polymorph selection during melt crystallization. Powder X-ray diffraction (PXRD) confirmed the crystal systems and enabled refinement of lattice parameters, while differential scanning calorimetry (DSC) and thermogravimetric-differential thermal analysis (TG-DTA) provided insights into the thermal properties of the polymorphs. This work demonstrates a scalable, solvent-free approach to selectively obtain metacetamol polymorphs, offering valuable implications for controlled pharmaceutical manufacturing.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"676 ","pages":"Article 128428"},"PeriodicalIF":2.0,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145682804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Transient simulation of multi-physical field evolution in Fe–0.2C–6Cu alloy under pulsed and differential-phase magnetic fields","authors":"Chongbo Li,&nbsp;Junting Zhang,&nbsp;Dongxia Kou,&nbsp;Zexiao Han,&nbsp;Kaihui Ma,&nbsp;Yuanji Xu","doi":"10.1016/j.jcrysgro.2025.128446","DOIUrl":"10.1016/j.jcrysgro.2025.128446","url":null,"abstract":"<div><div>A transient 2D axisymmetric mathematical model that couples the pulse electromagnetic field with fluid flow and solidification was established by using the COMSOL Multiphysics software. The solidification behavior of Fe–0.2C–6Cu wt.% alloy during direct chill (DC) casting was first comparatively analyzed under conditions with and without the application of a pulsed magnetic field. Particular attention was paid to the evolution of melt flow, heat transfer, and solidification characteristics at various spatial locations. Subsequently, the coupled effects of pulsed electromagnetic parameters—including current intensity, frequency, and duty cycle—on the flow, thermal, solidification behavior, and mechanical response of the alloy were systematically investigated. The results demonstrate that optimized pulsed magnetic field (PMF) and differential-phase pulsed magnetic field (DPMF) conditions significantly enhance the Lorentz force, inducing strong and stable toroidal vortex structures. This in turn intensifies convective heat transfer and accelerates the solidification rate. Among the tested conditions, the combination of a 1200 A current and a frequency of 10 Hz yielded the most favorable electromagnetic response. Mechanical analyses further indicated that enhanced strain compatibility and stress redistribution capabilities were observed at critical interface regions under DPMF conditions, highlighting the potential of DPMF to tailor solidification microstructures and mitigate the development of residual stresses during DC casting.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"676 ","pages":"Article 128446"},"PeriodicalIF":2.0,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145682806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Crystalline-to-amorphous transition in Sn-doped Ga2O3 thin films grown by radio-frequency powder sputtering","authors":"Haram Lee,&nbsp;Mijin Park,&nbsp;Hyon Chol Kang","doi":"10.1016/j.jcrysgro.2025.128455","DOIUrl":"10.1016/j.jcrysgro.2025.128455","url":null,"abstract":"<div><div>This study investigates the structural and optical evolution of Sn-doped Ga₂O₃ thin films as a function of Sn content. The films were grown on sapphire (0001) substrates using radio-frequency powder sputtering with a mixture of SnO₂ and Ga₂O₃ powders at 600 °C. X-ray diffraction and transmission electron microscopy revealed a clear crystalline-to-amorphous transition with increasing Sn concentration. The films with a low Sn content exhibited a mixed structure comprising columnar crystalline grains and conical amorphous regions. At higher Sn concentrations (up to 9.23 at%), the films became entirely amorphous, except for a thin crystalline layer near the substrate interface. This transition was driven by excessive lattice distortion and Sn incorporation beyond the solubility threshold. Ultraviolet–visible absorption spectroscopy showed a monotonic decrease in the optical bandgap from 5.1  eV (undoped) to 4.88  eV (9.23 at% Sn-doped), attributed to amorphization-induced disorder and the formation of localized states near the band edges. These results highlight the role of Sn doping in the phase stability and electronic properties of Ga₂O₃ thin films.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"676 ","pages":"Article 128455"},"PeriodicalIF":2.0,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145733897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Epitaxial columnar growth of strain-free antiferromagnetic Weyl semimetal Mn3Sn on wurtzite c-plane GaN/Al2O3(0001)","authors":"Hannah Hall,&nbsp;Sunil Timilsina,&nbsp;Sneha Upadhyay,&nbsp;Tyler Erickson,&nbsp;Cherie D’Mello,&nbsp;David C. Ingram,&nbsp;Arthur R. Smith","doi":"10.1016/j.jcrysgro.2025.128426","DOIUrl":"10.1016/j.jcrysgro.2025.128426","url":null,"abstract":"<div><div>Weyl semimetal thin films with excellent crystalline quality are of great interest for antiferromagnetic spintronics. Mn<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>Sn is one Weyl semimetal with great properties and promise for exciting science and applications. It has proven very challenging, however, to grow Mn<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>Sn thin films with smooth surfaces, negligible strain, and excellent crystallinity. In this work, we discuss the successful preparation of epitaxial Mn<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>Sn (0001)-oriented thin films via molecular beam epitaxial growth on <span><math><mi>c</mi></math></span>-plane wurtzite GaN which was grown by MBE on Al<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> (0001). We present the reflection high energy electron diffraction analysis along with x-ray diffraction in order to demonstrate the crystalline quality of the film, and we give atomic models to explain the epitaxial orientation relationships between the crystal lattices of the substrate, GaN layer, and Mn<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>Sn layer. Importantly, we discuss the film lattice parameters as compared to expected values, demonstrating negligible strain both <em>in-plane</em> and <em>out-of-plane</em>. Atomic force microscopy reveals an epitaxial columnar growth mode characterized by flat-top-mesa islands, while scanning tunneling microscopy shows the atomically smooth surfaces of the mesa-top structures. Finally, Rutherford backscattering informs the stoichiometry of the film as well as the layer thicknesses.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"676 ","pages":"Article 128426"},"PeriodicalIF":2.0,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145600639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"LaNbTe2O8: A mid-infrared nonlinear optical crystal exhibiting strong second harmonic generation effect and notable birefringence","authors":"Ziyue Chen,&nbsp;Rukang Li","doi":"10.1016/j.jcrysgro.2025.128447","DOIUrl":"10.1016/j.jcrysgro.2025.128447","url":null,"abstract":"<div><div>A new lanthanum niobium tellurite LaNbTe₂O₈, with favorable mid-infrared (IR) NLO properties has been obtained by high-temperature solution method using excess amount of TeO₂ as flux. This compound crystallized in the noncentrosymmetric space group <em>A</em>bm2 with unit cell parameters of <em>a</em> = 10.9602(14) Å, <em>b</em> = 7.8406(9) Å, <em>c</em> = 8.1507(9) Å and <em>Z</em> = 4. Its structure features two alternate arranged layers consisting of highly distorted NbO₆ octahedra and LaO₈ polyhedra, and TeO₃ trigonal pyramids with stereoactive lone pairs connect the layers to complete the 3D framework. Notably, the optical measurements revealed that LaNbTe₂O₈ possesses a strong second harmonic generation (SHG) signal of 1.2 × KTP at 1064 nm and a wide transparent range (0.34−5.6 μm), which could cover the full crucial atmospheric window (3–5 μm). Considering its large birefringence of 0.165 as revealed by the calculations, it should be capable of realizing phase matching conditions in a wide range. These properties make LaNbTe₂O₈ a potential candidate as a mid-IR nonlinear optical material.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"676 ","pages":"Article 128447"},"PeriodicalIF":2.0,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145682808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effects of Sr2+ doping on the X-ray detection properties of Cs3Cu2I5 crystal","authors":"Wenjie Zhang ,&nbsp;Qisheng Chen ,&nbsp;Qinhua Wei ,&nbsp;Hang Yin ,&nbsp;Gao Tang ,&nbsp;Suyin Zhang ,&nbsp;Xilei Sun ,&nbsp;Yanliang Liu ,&nbsp;Laishun Qin","doi":"10.1016/j.jcrysgro.2025.128454","DOIUrl":"10.1016/j.jcrysgro.2025.128454","url":null,"abstract":"<div><div>Cs₃Cu₂I₅ single crystals are considered excellent scintillators and semiconductors for indirect and direct X-ray detection. In this paper, the strategy of heterovalent ion (Sr²⁺) doping was adopted to improve X-ray detection properties further. High-quality pure Cs₃Cu₂I₅ and Sr-doped Cs₃Cu₂I₅ single crystals were grown by the Bridgman method. The crystal structure and doping concentration was characterized using XRD, XPS and ICP-MS. The carrier mobility was increased from 0.063 cm²/Vs to 3.524 cm²/Vs while the sensitivity and detection limit of crystal were improved by doping with Sr²⁺. The properties of direct X-ray detection were improved while the PLQY, scintillation light yield, and energy resolution were all decreased. The defect and activation energies were investigated by thermoluminescence (TL) and variable temperature XEL. Finally, the mechanism is also discussed. The doping of Sr²⁺ is an effective method to tuning the performance of direct X-ray detection.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"676 ","pages":"Article 128454"},"PeriodicalIF":2.0,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145733898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}