克氏晶体生长炉的加热效率及节能潜力

IF 1.7 4区 材料科学 Q3 CRYSTALLOGRAPHY
Sepehr Foroushani, Arved Wintzer, Frank-Michael Kiessling, Kaspars Dadzis
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引用次数: 0

摘要

环境问题和不断上升的能源成本增加了人们对从熔体中生长半导体晶体的能源效率的关注,传统上这是一个高度能源密集型的过程。迄今为止,节能措施一般局限于生产设施的通风和空调,对工艺设备的关注远远不够。在本工作中,建立了一个热力学极限作为评估工业晶体生长过程能量效率的基线。然后表明,典型的工业炉的能量需求远远超过这个严格必要的限制。通过对一个研究规模的感应加热和电阻加热炉的测量,以及经过验证的模型的数值模拟,确定了炉内能量损失的来源和提高能源效率的可能途径。测量结果显示,切换到感应加热可以节省大约35%的能源。仿真结果表明,数值模型在详细了解高炉热工性能和确定改进和优化措施方面具有实用价值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Heating efficiency and energy saving potential of Czochralski crystal growth furnaces

Heating efficiency and energy saving potential of Czochralski crystal growth furnaces
Environmental concerns and rising energy costs have increased attention to energy efficiency in growing semiconductor crystals from melt, traditionally a highly energy-intensive process. The energy conservation measures have so far generally been limited to the ventilation and air-conditioning of production facilities, with far less attention paid to the process equipment. In the present work, a thermodynamic limit is established as the baseline for evaluating the energy efficiency of industrial crystal growth processes. It is then shown that the typical industrial furnace has energy demands far above this strictly necessary limit. Measurements on a research-scale furnace with induction and resistance heating along with numerical simulation with validated models are used to identify the sources of energy loss in the furnace and possible ways of improving energy efficiency. Measurement results show that switching to induction heating can lead to energy savings of roughly 35%. Simulations demonstrate the utility of numerical modes in gaining a detailed understanding of the thermal performance of the furnace and identifying the improvement and optimization measures.
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来源期刊
Journal of Crystal Growth
Journal of Crystal Growth 化学-晶体学
CiteScore
3.60
自引率
11.10%
发文量
373
审稿时长
65 days
期刊介绍: The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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