Journal of Crystal Growth最新文献

{"title":"Systematic characterization and defect analysis of β-Ga2O3 single crystals co-designed by the edge-defined film-fed growth method and numerical analysis","authors":"Biao Meng ,&nbsp;Changshuai Yin ,&nbsp;Taiqiao Liu ,&nbsp;Yao Lu ,&nbsp;Yujie Yan ,&nbsp;Yang Cao ,&nbsp;Hao Fu ,&nbsp;Gai Wu ,&nbsp;Kang Liang ,&nbsp;Sheng Liu ,&nbsp;Zhaofu Zhang","doi":"10.1016/j.jcrysgro.2025.128374","DOIUrl":"10.1016/j.jcrysgro.2025.128374","url":null,"abstract":"<div><div>Co-designed optimization and analysis of thermal field structure and defect formation for high quality <em>β</em>-Ga₂O₃ single crystal with ultra-wide bandgap has been systematically investigated via edge-defined film-fed growth technique and numerical simulation. To confirm the wafer-scale quality, a collaborative verification scheme is developed at both microscopic and macroscopic scales. The narrow full width at half-maximum (139.82 arcsec) and low average defect density (5.5 × 10⁴ cm⁻²) highlight the high quality of the bulk crystal. The overall low defect density in the crystal is confirmed through rotated electron spin resonance owing to the appearance of angle-independent single peak. The dopant of Zr is verified as the main impurity and the role of Zr, an effective n-type dopant, is investigated by first principles calculation. Moreover, the microscopic mechanism of defect formation is interpreted as atomic arrangement disorder and lattice distortion. This study presents novel proposals and strategies for the advanced improvement and optimization of <em>β</em>-Ga₂O₃ single crystal growth and defect characterization.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"672 ","pages":"Article 128374"},"PeriodicalIF":2.0,"publicationDate":"2025-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145340022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Deep-ultraviolet luminescence from sp2-bonded BN films grown by metalorganic chemical vapor deposition using tris(dimethylamino)borane","authors":"Kohei Shima,&nbsp;Haruto Tsujitani,&nbsp;Shigefusa F. Chichibu","doi":"10.1016/j.jcrysgro.2025.128370","DOIUrl":"10.1016/j.jcrysgro.2025.128370","url":null,"abstract":"<div><div><em>sp</em>²-bonded BN films exhibiting deep-ultraviolet luminescence peaks were grown by metalorganic chemical vapor deposition using tris(dimethylamino)borane [TDMAB, B[N(CH₃)₂]₃] and NH₃ as B and N sources, respectively. BN films with thicknesses ranging from 0.7 to 6.1 µm were grown at temperatures (<span><math><mrow><msub><mi>T</mi><mi>g</mi></msub></mrow></math></span>) between 1200 and 1500 °C, under mass-transport-limited growth conditions. The results of x-ray diffraction, transmission electron microscopy, Fourier transform infrared spectroscopy, Raman-scattering spectroscopy, and x-ray photoelectron spectroscopy confirmed the dominance of turbostratic BN and the presence of partially ordered structures such as ABC-stacked rhombohedral phases, along with minor contributions from B-O and C-N bonds. The films exhibited broad cathodoluminescence bands centered at 5.5 eV, 4.1 eV, and 3.2 eV, which are attributable to stacking defects, most probably C impurities, and possibly O impurities, respectively. One of the samples exhibited distinct zero-phonon lines at 4.14 and 4.16 eV attributable to C dimer defects in ABC-stacked (rhombohedral) and AB-stacked (Bernal) BN phases, respectively. Compared with a reference BN epilayer grown using the BCl₃-NH₃-N₂ gas system, B[N(CH₃)₂]₃-grown films exhibited approximately twofold higher cathodoluminescence intensities in the 5.2–6.1 eV range at 300 K, likely due to the reduced incorporation of nonradiative recombination centers. The cathodoluminescence intensity was maximized at <span><math><mrow><msub><mi>T</mi><mi>g</mi></msub></mrow></math></span> = 1400 °C, while both higher and lower <span><math><mrow><msub><mi>T</mi><mi>g</mi></msub></mrow></math></span> resulted in higher concentrations of nonradiative recombination centers, likely associated with C-N bonds and divacancies comprising a B-vacancy and a N-vacancy, V_BV_N, respectively. These results demonstrate that B[N(CH₃)₂]₃ is a suitable B source for the deposition of luminescent BN films, offering the potential for improved deep-ultraviolet emitter performance through reduced impurity incorporation.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"672 ","pages":"Article 128370"},"PeriodicalIF":2.0,"publicationDate":"2025-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145340021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of substrate atomic symmetry on the epitaxy and rotational domain formation of κ-Ga2O3","authors":"Ha Young Kang,&nbsp;Jaeheon Jung,&nbsp;Young Soo Hwang,&nbsp;Roy B. Chung","doi":"10.1016/j.jcrysgro.2025.128371","DOIUrl":"10.1016/j.jcrysgro.2025.128371","url":null,"abstract":"<div><div>This study systematically explores the structural factors influencing κ-phase gallium oxide (κ-Ga₂O₃) thin film growth and domain formation on non-basal plane substrates. Accordingly, we grew κ-Ga₂O₃ thin films using mist chemical vapor deposition on both basal and non-basal plane sapphire (c-, a-, m-, and r-plane) and GaN (c- and m-plane) substrates for analysis. Crystallinity, orientation, and domain structures were assessed by X-ray diffraction including 2θ–ω scans, rocking curves, and φ-scans. On c- and a-plane sapphire and GaN substrates, κ-Ga₂O₃ with c-axis orientation was selectively stabilized, whereas α-Ga₂O₃ predominantly formed on r- and m-plane sapphire. Regardless of substrate symmetry, all κ-Ga₂O₃ films exhibited persistent three-fold rotational domains, highlighting the limitations of current substrate configurations. These results demonstrate the significant influence of substrate atomic arrangement on phase stability and domain control, emphasizing the need for advanced substrate engineering to realize single-domain κ-Ga₂O₃ thin films with improved crystalline quality.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"671 ","pages":"Article 128371"},"PeriodicalIF":2.0,"publicationDate":"2025-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145326237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Molecular beam epitaxy of flexible InN thin films on fluorophlogopite mica","authors":"Yingzhao Geng ,&nbsp;Yang Xu ,&nbsp;Xu Li ,&nbsp;Xiao Wang ,&nbsp;Hao Wu ,&nbsp;Chang Liu","doi":"10.1016/j.jcrysgro.2025.128355","DOIUrl":"10.1016/j.jcrysgro.2025.128355","url":null,"abstract":"<div><div>InN thin films have been deposited on fluorophlogopite mica (F-mica) substrates by molecular beam epitaxy (MBE) under various growth conditions. The N₂ flow rate and radio-frequency (RF) power were adjusted to realize N-rich and In-rich growth conditions. During the transition from N-rich to In-rich conditions, the plateaus formed by partially coalesced larger grains or islands were observed, which was attributed to the short diffusion length of indium (In) atoms. Meanwhile, the In-rich InN thin films exhibit lower dislocation densities than those of N-rich thin films. Under In-rich conditions, similar plateaus were also observed at lower growth temperatures. Additionally, the surface roughness and total dislocation density were reduced by increasing the growth and In source temperatures to 490 and 775 °C. Throughout all growth condition, the in-plane epitaxial relationship remains as InN [110]//F-mica [010].</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"671 ","pages":"Article 128355"},"PeriodicalIF":2.0,"publicationDate":"2025-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145326234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Strain modulation in 2D GaSe epitaxial films by substrate engineering via molecular beam epitaxy (MBE)","authors":"Minh-Anh Nguyen Tran ,&nbsp;Van Quang Nguyen ,&nbsp;Cao Khang Nguyen ,&nbsp;Sunglae Cho","doi":"10.1016/j.jcrysgro.2025.128369","DOIUrl":"10.1016/j.jcrysgro.2025.128369","url":null,"abstract":"<div><div>In this work, we systematically investigate the epitaxial growth of GaSe thin films on different substrates, including GaAs(100), GaAs(111), GaN/Al₂O₃(0001), and SrTiO₃(001), using molecular beam epitaxy (MBE). All films exhibit a universal strain configuration with biaxial tensile strain in the basal plane coupled with out-of-plane compressive strain, whose magnitude varies with substrate type. On cubic GaAs substrates, GaSe grows with well-aligned single domains, while hexagonal GaN and perovskite STO promote multiple domain orientations, reflecting the role of interfacial symmetry mismatch. X-ray diffraction confirms out-of-plane lattice contraction, with compressive strain ranging from ∼1.3 % on GaAs(1<!--> <!-->0<!--> <!-->0) to ∼2.5 % on GaN(0001). Raman spectroscopy shows red-shifts of the in-plane <span><math><msubsup><mi>E</mi><mrow><mn>2</mn><mi>g</mi></mrow><mn>2</mn></msubsup></math></span> phonon mode, directly evidencing biaxial tensile strain. These findings demonstrate that substrate-induced strain, governed primarily by symmetry mismatch, provides a powerful and intrinsic route to tailor the optical and electronic properties of GaSe, enabling new strategies for strain-engineered 2D optoelectronic devices.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"671 ","pages":"Article 128369"},"PeriodicalIF":2.0,"publicationDate":"2025-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145326236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Single crystal growth, study of magnetic and transport properties in the noncentrosymmetric material YCoC2","authors":"Debajani Rout ,&nbsp;R. Kulkarni ,&nbsp;A. Thamizhavel ,&nbsp;Santosh Kumar","doi":"10.1016/j.jcrysgro.2025.128343","DOIUrl":"10.1016/j.jcrysgro.2025.128343","url":null,"abstract":"<div><div>We report the growth of single crystals of the non-centrosymmetric material YCoC₂ by the Czochralski technique using a tetra arc furnace. This compound belongs to the family of rare-earth transition-metal carbides, the members of which exhibit a wide range of interesting phenomena including topological semimetallic behaviour. We have investigated the magnetic and transport properties of YCoC₂. The results of resistivity measurements revealed a typical metallic behaviour across the temperature range, 4 &lt; <em>T</em> &lt; 300 K. At <em>T</em> = 3<em>.</em>9(1) K, a transition in both magnetization and resistivity measurements has been observed. This feature has been explored in detail with the temperature-dependent magnetization <em>M</em>(<em>T</em>) and resistivity <em>ρ</em>(<em>T</em>) measurements carried out at different magnetic fields.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"671 ","pages":"Article 128343"},"PeriodicalIF":2.0,"publicationDate":"2025-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145326238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Research on MOCVD structure design and process parameters based on CFD numerical simulation","authors":"Ya Li ,&nbsp;Jing Liang ,&nbsp;Yucong Lin ,&nbsp;Yu Lu ,&nbsp;Zhifeng Wang ,&nbsp;Houfu Dai ,&nbsp;Jian Li","doi":"10.1016/j.jcrysgro.2025.128366","DOIUrl":"10.1016/j.jcrysgro.2025.128366","url":null,"abstract":"<div><div>Zinc oxide (ZnO) films hold significant value in the field of optoelectronic devices due to their exceptional properties as wide bandgap semiconductors. Although Metal-Organic Chemical Vapor Deposition (MOCVD) technology enables the production of high-quality thin film epitaxy, its industrial application continues to encounter persistent challenges related to inadequate deposition uniformity and efficiency. In this research, we employed a novel vertical reaction chamber ZnO-MOCVD device to systematically investigate the synergistic mechanisms governing multiple parameters—including MO source, O source, Ar carrier gas flow rate, and observation window flow rate—through multi-physics coupled numerical simulations and orthogonal experimental design. The results demonstrate that precisely adjusting the O source flow velocity effectively mitigates vortex phenomena within the turntable, thereby stabilizing the laminar flow state. Increasing the inlet flow rate suppresses the thermal buoyancy effect and reduces the risk of gas-phase pre-reaction. The synergistic regulation of MO and O flow velocities significantly enhances the uniformity of diethyl zinc (DEZn) and oxygen (O₂) distribution. Orthogonal analysis successfully identified the optimal combination of process parameters, resulting in an exceptional deposition rate (0.2049 μm/h) and a coefficient of variation (4 %), thereby fully validating the effectiveness of the multi-parameter collaborative optimization strategy. This research provides an important theoretical foundation for MOCVD equipment process design and offers crucial guidance for advancing the industrial preparation of high-performance ZnO films.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"671 ","pages":"Article 128366"},"PeriodicalIF":2.0,"publicationDate":"2025-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145326235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Growth of large-sized α-HH via Mg2+-involved atmospheric salt bath-stirring strategy: crystallization mechanism and enhanced mechanical properties","authors":"Yisong Yang ,&nbsp;Sha Chen ,&nbsp;Zhishun Wei ,&nbsp;Ying Chang ,&nbsp;Yan Xiong ,&nbsp;Junxiang Zhao ,&nbsp;Hu Zhu ,&nbsp;Min Li ,&nbsp;Qirui Yang ,&nbsp;Guoqiang Yi","doi":"10.1016/j.jcrysgro.2025.128356","DOIUrl":"10.1016/j.jcrysgro.2025.128356","url":null,"abstract":"<div><div>This study proposes a method involving stirring after a constant-temperature water bath in a salt solution to enhance the crystal size, overall homogeneity, and hydration strength of α-hemihydrate gypsum (α-HH). Utilizing by-product gypsum from the chlor-alkali industry as raw material, the influence of Mg²⁺ ions on phase evolution and final morphology was systematically investigated. During the constant-temperature water bath process in salt solution, the neutral MgSO₄⁰ ion pairs formed by Mg²⁺ and SO₄^2- facilitated the dissolution of dihydrate gypsum (DH) while amplifying the solubility difference between α-HH and DH, thereby promoting preferential crystallization and precipitation of α-HH. Furthermore, Mg²⁺ inhibited crystal growth along the c-axis direction during α-HH development, effectively reducing the aspect ratio. The subsequent stirring process significantly increased secondary nucleation probability, enabling mutual adhesion among α-HH crystals of varying dimensions. This synergistic process ultimately yielded enlarged α-HH crystals with an average particle size of 143.21 μm and aspect ratio of 5.57. The flexural strength and absolute dry compressive strength of bulk samples prepared from these α-HH crystals are discussed in detail, demonstrating substantial improvements in mechanical properties compared to conventional preparation methods.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"671 ","pages":"Article 128356"},"PeriodicalIF":2.0,"publicationDate":"2025-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145326233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Low-temperature ECR-PEMOCVD growth of β-Ga2O3 thin films on FTO/glass for potential vertical Schottky diode applications","authors":"Jian Li ,&nbsp;Yaxin Zhao ,&nbsp;Xuan Wang ,&nbsp;Chunyu Ma ,&nbsp;Shuang Zhao ,&nbsp;Hongsheng Liu ,&nbsp;Karpinski Dzmitry ,&nbsp;Fuwen Qin","doi":"10.1016/j.jcrysgro.2025.128348","DOIUrl":"10.1016/j.jcrysgro.2025.128348","url":null,"abstract":"<div><div>The low-temperature growth of β-Ga₂O₃ thin films on FTO/glass substrates was achieved using ECR-PEMOCVD with TMGa and O₂ as precursors, and their structural, optical, and electrical properties were systematically investigated. XRD results reveal a clear evolution in crystallinity: as the substrate temperature increased from 350 °C to 500 °C and the discharge pressure decreased from 2.0  Pa to 0.5  Pa, the β-Ga₂O₃ films transitioned from amorphous to polycrystalline, eventually exhibiting strong (110) preferred orientation. XPS analysis confirmed the n-type conductivity of the films. A vertical metal–semiconductor–metal (MSM) Schottky diode based on Ni/n-type β-Ga₂O₃/FTO demonstrated a high rectification ratio of 1.57 × 10³ at ± 4 V, a Schottky barrier height of 0.8–0.9 eV, and a carrier concentration of approximately 2 × 10¹⁶ cm⁻³. These results suggest that ECR-PEMOCVD is a promising approach for the low-temperature deposition of β-Ga₂O₃ thin films, with great potential for vertical device applications under limited thermal budgets.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"671 ","pages":"Article 128348"},"PeriodicalIF":2.0,"publicationDate":"2025-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145264435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of dysprosium concentration on the photocatalytic and electrochemical properties of zirconium ferrite nanoparticles","authors":"D. Sasireka ,&nbsp;N. Kavitha ,&nbsp;T.Sathis Kumar ,&nbsp;L.Bruno Chandrasekar","doi":"10.1016/j.jcrysgro.2025.128354","DOIUrl":"10.1016/j.jcrysgro.2025.128354","url":null,"abstract":"<div><div>A novel dysprosium-doped zirconium ferrite was prepared by the chemical precipitation method. The doping concentration of dysprosium was set at 0 %, 2 %, and 4 %. The structural properties, such as crystalline size and strain, were examined. The doping tuned the morphology of the nanoparticles. The band gap of the material decreases as the doping of dysprosium increases. The degradation of methylene blue was examined under natural sunlight and 93.2 % degradation efficiency was achieved at 120 min. The doping enhances the degradation efficiency using the zirconium ferrite catalyst. The electrochemical properties of the prepared nanoparticles as electrodes in a supercapacitor were studied using cyclic voltammetry and the galvanostatic charge–discharge technique. The maximum specific capacitance of ∼ 375F/g was observed at the scan rate of 5 mV/s.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"671 ","pages":"Article 128354"},"PeriodicalIF":2.0,"publicationDate":"2025-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145264436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}