Journal of Crystal Growth最新文献

{"title":"Sodium lauryl sulphate-mediated manganese doping to enhance photocatalytic performance of cadmium sulphide-manganese composite","authors":"Santhoshbalaji Muthuvijayan ,&nbsp;T. Theivasanthi ,&nbsp;Rajesh Kumar Manavalan ,&nbsp;Selvakumar Balasubramanian ,&nbsp;Subash C.B. Gopinath","doi":"10.1016/j.jcrysgro.2025.128125","DOIUrl":"10.1016/j.jcrysgro.2025.128125","url":null,"abstract":"<div><div>This research investigates the effect of manganese doping concentration in cadmium sulphide (CdS) nanoparticles synthesized using sodium lauryl sulfate (SLS) surfactant to improve photocatalytic activity. We systematically controlled the manganese precursor concentration at 0.004 g, 0.0099 g, 0.0148 g, 0.0198 g, and 0.0247 g to achieve optimal doping efficiency and modulate the structural transformation of CdS-Mn nanocomposites. It was observed that the bandgap energy varied between 2.16 eV and 2.27 eV. Forward scattering of the X-rays was measured for the crystal at an incident photon energy of 2.27 eV, depending on Mn concentration, using UV–Vis absorption spectra. XRD analysis of CdS confirmed its wurtzite form with a peak shift at 2θ ≈ 32°, attributed to lattice contraction upon Mn doping. Transmission electron microscopy analysis provided a particle size estimate of about 7–8 nm. The reduction of methylene blue through photocatalytic activity under UV light showed that the highest degradation efficiency was achieved with Mn doping at 0.0148 g. The presence of SLS improved nanoparticle dispersion, preventing particle agglomeration and requiring stabilization, which is essential for high photocatalytic activity. The findings of this study are valuable for understanding the interaction process between Mn-doped CdS nanoparticles and SLS, as well as the synergistic effects that effectively enhance photocatalytic performance.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"658 ","pages":"Article 128125"},"PeriodicalIF":1.7,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143518975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"3D numerical investigation of the factors affecting the thermal stresses and the wavy external shape of Li2MoO4 crystals grown by the Czochralski method","authors":"C. Stelian,&nbsp;M. Velazquez","doi":"10.1016/j.jcrysgro.2025.128134","DOIUrl":"10.1016/j.jcrysgro.2025.128134","url":null,"abstract":"<div><div>Three-dimensional (3D) modeling was applied to investigate heat transfer, convection and thermal stresses in Czochralski growth of Li₂MoO₄ (LMO) crystals used to build the core of heat-scintillation cryogenic bolometers (HSCBs). Several crystals of <span><math><mrow><mn>4</mn><mspace></mspace><mi>c</mi><mi>m</mi></mrow></math></span> and <span><math><mrow><mn>5</mn><mspace></mspace><mi>c</mi><mi>m</mi></mrow></math></span> in diameter were grown in two different Czochralski configurations. The largest ingot (<span><math><mrow><mn>4</mn><mspace></mspace><mi>c</mi><mi>m</mi></mrow></math></span>-diameter and <span><math><mrow><mn>6</mn><mspace></mspace><mi>c</mi><mi>m</mi></mrow></math></span>-length) grown in a furnace based on coupling the inductive coil and a platinum crucible, has cracked as the bottom part of the crystal was cut. Another crystal (<span><math><mrow><mn>5</mn><mspace></mspace><mi>c</mi><mi>m</mi></mrow></math></span>-diameter and <span><math><mrow><mn>15</mn><mspace></mspace><mi>c</mi><mi>m</mi></mrow></math></span>-length) was grown in a furnace based on inductive heating of a susceptor, which was previously optimized by numerical modeling in order to reduce the thermal stresses in LMO crystals. The external surface of this ingot shows a slightly wavy shape. This irregular shape was investigated by considering 3D convective effects at the free surface of the melt, which can affect the liquid meniscus shape, and generate slight instabilities of the growth process. It is concluded that this wavy shape can be avoided by changing the sensitivity of the automatic crystal shape control. The thermal stress computations, conducted for the ingot of <span><math><mrow><mn>4</mn><mspace></mspace><mi>c</mi><mi>m</mi></mrow></math></span> in diameter, show that the normal stress in the longitudinal section has a maximum which highly exceeds the critical value of the tensile stress in a region located at the bottom part of the ingot. That explains the fracture observed during the cutting of the ingot’s tail. The computations performed in the case of <span><math><mrow><mn>5</mn><mspace></mspace><mi>c</mi><mi>m</mi></mrow></math></span>-diameter ingot, grown in an optimized configuration, show that the crystal exhibits low thermal stress, except for a thin region of <span><math><mrow><mn>2</mn><mspace></mspace><mi>m</mi><mi>m</mi></mrow></math></span> located at the ingot periphery, where the stress slightly exceeds the critical value. Thermal stresses can be reduced by a factor of 2 by growing the ingots parallel to the c-axis.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"658 ","pages":"Article 128134"},"PeriodicalIF":1.7,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143520225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural, morphological, and improved dielectric properties of PbZr0.52Ti0.48O3 nanoparticles/polycarbonate composites synthesized by using sol–gel method","authors":"Hitesh D. Sonawane ,&nbsp;S.D. Dhole ,&nbsp;S.S. Dahiwale ,&nbsp;Sajid Naeem ,&nbsp;Sushma.C. Kulkarni ,&nbsp;A.V. Patil ,&nbsp;M.Shaheer Akhtar ,&nbsp;Sadia Ameen","doi":"10.1016/j.jcrysgro.2025.128124","DOIUrl":"10.1016/j.jcrysgro.2025.128124","url":null,"abstract":"<div><div>In this work, the PbZr_0.52Ti_0.48O₃ (PZT) nanocrystalline particles were effectively produced using the sol–gel method and then integrated into polycarbonate (PC) to create composites with various PZT concentrations. The produced PZT particles, PC, and PC/PZT composites were evaluated using X-ray diffraction (XRD), Fourier-transform infrared spectroscopy (FTIR), ultraviolet–visible spectroscopy (UV–Vis), and scanning electron microscopy (SEM) techniques. XRD and FTIR investigations verified the development of perovskite PZT nanoparticles free of the pyrochlore phase at 700 °C, with a tetragonal structure and an average crystallite size of PZT nanoparticle<!--> <!-->is about 56 nm. The XRD pattern revealed its amorphous structure, while the FTIR spectra indicated the presence of C<img>H, C<img>O, C<img>C, and C<img>O bonds. FTIR spectra showed metal-oxide bonds between 400–800 cm⁻¹, while UV–Vis examination revealed a band gap energy of 2.7 eV. SEM images revealed aggregation among spherical PZT particles. SEM images revealed strong adherence and aggregation of PZT particles within the polymer matrix. The dielectric characteristics of the PC/PZT composites improved with increasing PZT concentrations. The improved interfacial mechanism in ceramic-polymer composites can be used to obtain high dielectric constants.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"658 ","pages":"Article 128124"},"PeriodicalIF":1.7,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143528988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A highly sensitive and selective detection of ascorbic acid and uric acid based on nitrogen-doped graphitic carbon nanotube networks in situ grown on 316L stainless steel","authors":"Rui Lei ,&nbsp;Wei Liu ,&nbsp;Na Liu ,&nbsp;Lanlan Ye ,&nbsp;Junfu Zhang ,&nbsp;Haiyang Li ,&nbsp;Zihao Wang ,&nbsp;Wenlei Hu ,&nbsp;Mengyang Lv ,&nbsp;Zaijiao Fei","doi":"10.1016/j.jcrysgro.2025.128110","DOIUrl":"10.1016/j.jcrysgro.2025.128110","url":null,"abstract":"<div><div>A new electrochemical sensor concerning nitrogen-doped graphitic carbon nanotube networks (N-GCNNs) is constructed for a coexistent probe of ascorbic acid (AA) and uric acid (UA). The N-GCNNs are in situ grown on stainless steel (SS) substrate through chemical vapor deposition, heat treatment and hydrothermal method. These N-GCNNs are utilized as working electrodes to determine AA and UA electrochemically. From cyclic voltammetry and differential pulse voltammetry studies, the N-GCNNs can identify AA with wide rectilineal detection ranges from 100 to 3000 μM with a detection limit of 1 μM and determine UA from 10 to 150 μM with a detection limit of 0.5 μM. Furthermore, these N-GCNNs exhibit exceptional selectivity, reproducibility and stability owing to a great number of exposed edge plane sites and the increase of the heterogeneous electron transform rate.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"658 ","pages":"Article 128110"},"PeriodicalIF":1.7,"publicationDate":"2025-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143509166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Top-Seeded solution growth of lead zirconate titanate single crystals from a high temperature solution","authors":"Vincent Fratello,&nbsp;Song Won Ko","doi":"10.1016/j.jcrysgro.2025.128109","DOIUrl":"10.1016/j.jcrysgro.2025.128109","url":null,"abstract":"<div><div>Lead zirconate titanate (PZT—Pb(Zr_XTi_1−X)O₃) single crystals were grown by the top-seeded solution growth (TSSG) method. Three solvent systems PbO-PbLiPO₄, PbO-Pb₂P₂O₇, and PbO-B₂O₃ were chosen for their low vapor pressures, but they also had high viscosity and molecular clusters that formed in the melt. To obtain crystals near the morphotropic phase boundary with <em>X</em> ≈<!--> <!-->0.52, melt compositions were formulated based on earlier phase diagram work with a low ratio of [ZrO₂]/([TiO₂] + [ZrO₂]) ∼0.1 in the melt. Liquid-phase epitaxy or top-seeded solution growth with various substrates was not effective because of the excessive lattice mismatch. Bootstrapping from seeding on a platinum wire to a PZT seed was necessary to grow large crystals.</div><div>To maintain a constant crystal composition, steady-state isothermal liquid-phase transport in a two-phase system was developed. This method relies on the phase diagram thermodynamic equilibrium between liquid and solid phases. The melt was equilibrated at the growth temperature with an excess of nutrients in the proper proportions to result in crystallites of the target composition precipitating on the bottom. In a negative vertical temperature gradient, this nutrient material dissolved and was transported to the cooler seed crystal at the top of the melt. This occurs at a constant average temperature to achieve a constant composition the same as the nutrient on the bottom.</div><div>The initial growth morphology of the crystals was a stepped surface, showing columnar growth of large macro-steps growing together trapping melt inclusions. This was improved through solvent choice, liquid-phase transport, and lower growth rates.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"657 ","pages":"Article 128109"},"PeriodicalIF":1.7,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143474019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Numerical investigation on the effect of growth conditions on silicon carbide growth in chemical vapor deposition","authors":"Guangyu Zheng ,&nbsp;Yukang Sun ,&nbsp;Simin Liu ,&nbsp;Peng Su ,&nbsp;Junhong Pei ,&nbsp;Ran Zuo ,&nbsp;Lijun Liu","doi":"10.1016/j.jcrysgro.2025.128108","DOIUrl":"10.1016/j.jcrysgro.2025.128108","url":null,"abstract":"<div><div>The growth of silicon carbide (SiC) by chemical vapor deposition (CVD) is influenced by process parameters, and the growth rate and the uniformity of film can be improved by optimizing the parameters. In this paper, we propose a method for optimizing SiC-CVD process parameters based on the combined theory of Computational Fluid Dynamics (CFD) and Design of Experiment (DOE). Herein, the flow stability in the Buffered Distributed Spray (BDS) reactor was studied over a wide range of process conditions to determine the flow states and characteristics, thereby identifying the suitable process parameter range for SiC-CVD. Through simulation validation, a deposition rate of up to 24.8 μm/h with film uniformity below 5 % was achieved. This study provides both an effective solution for high-quality epitaxial growth and a theoretical basis for subsequent experiments.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"657 ","pages":"Article 128108"},"PeriodicalIF":1.7,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143464464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"MBE growth and properties of GaInAsSb alloys deep inside the miscibility gap","authors":"T. Sabardeil ,&nbsp;G. Gregoire ,&nbsp;J.-L. Reverchon ,&nbsp;V. Trinite ,&nbsp;E. Tournié ,&nbsp;J.-B. Rodriguez ,&nbsp;A. Evirgen","doi":"10.1016/j.jcrysgro.2025.128107","DOIUrl":"10.1016/j.jcrysgro.2025.128107","url":null,"abstract":"<div><div>We present a detailed study of the crystalline, morphological, electrical and optical properties of GaInAsSb quaternary alloys grown by Molecular Beam Epitaxy (MBE) on GaSb substrate. The objective of this study is, on the one hand, to use the far-from- thermodynamic equilibrium specificity of MBE to grow compositions deep inside the miscibility gap, and to identify the range of compositions accessible for high-performance infrared devices. On the other hand, it enriches the knowledge on the InAs-rich GaInAsSb quaternary alloy that has been little studied until now.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"657 ","pages":"Article 128107"},"PeriodicalIF":1.7,"publicationDate":"2025-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143454893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Preparation and surface morphology analysis of near stoichiometric lithium tantalate crystals by the vapour transfer equilibrium method","authors":"Jiashun Si ,&nbsp;Xuefeng Xiao ,&nbsp;Yan Huang ,&nbsp;Yan Zhang ,&nbsp;Shuaijie Liang ,&nbsp;Qingyan Xu ,&nbsp;Huan Zhang ,&nbsp;Lingling Ma ,&nbsp;Cui Yang ,&nbsp;Xuefeng Zhang","doi":"10.1016/j.jcrysgro.2025.128105","DOIUrl":"10.1016/j.jcrysgro.2025.128105","url":null,"abstract":"<div><div>In this paper, near stoichiometric lithium tantalate wafers with different Li contents were prepared by the vapour transfer equilibrium method, and the surface morphology of the diffused material and wafers were analyzed. X-ray diffraction and scanning electron microscopy tests were conducted on the diffused material and used diffused material, and it was found that the Li content in the used diffused material decreased, the crystal particle size increased, the lattice parameters decreased, and the crystallinity increased. By analyzing the Curie temperature, scanning electron microscopy, and atomic force microscopy tests of near stoichiometric lithium tantalate wafers prepared by different processes, it was found that the Li ions diffused into the wafers are related to the diffusion temperature, and the higher the diffusion temperature, the smaller the surface roughness of the wafer. When the Li/Ta ratio in the diffused material is equal to or exceeds 70/30, twins will appear on the wafer surface. Through the above analysis, the optimum diffusion temperature range for preparing near stoichiometric lithium tantalate wafers is 1160–1260 ℃, and the Li/Ta ratio in the diffused material should not exceed 70/30, which provides an empirical reference for the preparation of near stoichiometric lithium tantalate crystals with better performance by vapour transfer equilibrium method.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"657 ","pages":"Article 128105"},"PeriodicalIF":1.7,"publicationDate":"2025-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143480755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Controllable preparation of TiO2 nanoparticles using deep eutectic solvents and their photocatalytic degradation of dyeing wastewater","authors":"Bin Han ,&nbsp;Dianchun Ju ,&nbsp;Zhuo Chen ,&nbsp;Yunjie Bao ,&nbsp;Yingying Li ,&nbsp;Qin Yan ,&nbsp;Yuxia Liu ,&nbsp;Chunyu Chen","doi":"10.1016/j.jcrysgro.2025.128104","DOIUrl":"10.1016/j.jcrysgro.2025.128104","url":null,"abstract":"<div><div>Titanium dioxide nanoparticles (TiO₂ NPs) have garnered considerable attention within the materials science community due to their superior availability, high photocatalytic activity, remarkable thermal stability, and cost-effectiveness. Recently, a growing interest has emerged in their potential applications within scientific research. Therefore, the development of more efficient and controllable preparation methods has been concentrated in current studies. This study uses deep eutectic solvents (DESs) as solvents and structure-directing agents to provide a gentle and environmentally friendly process for the controlled synthesis of TiO₂ NPs. Furthermore, it examines their photocatalytic degradation performance on dye wastewater under full-spectrum light sources. The findings reveal that by introducing TiCl₄-DESs in a mass ratio of 1:10 in a hydrolytic solution of PEG-H₂O with a mass ratio of 1:1, and subsequently, calcining the mixture at 550 ℃ in a muffle furnace, uniform spherical pure anatase–type TiO₂ NPs with good dispersion and an average particle size of approximately 14.01 nm can be obtained. After 60 min of exposure to a full-spectrum light source, the removal rate of methylene blue reached 99.2 %. After 180 min, the degradation rates of rhodamine B and methyl orange were found to be 97.0 % and 80.7 %, respectively. These results demonstrate that the application of DESs facilitates the green and mild modulation of the nanostructures and grain sizes of TiO₂ NPs, effectively enhancing their photocatalytic activity.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"656 ","pages":"Article 128104"},"PeriodicalIF":1.7,"publicationDate":"2025-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143438092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structure evolution during growth of epitaxial NbN films on Al2O3 (0006) deposited by magnetron sputtering and its impact on electrical properties","authors":"A. Farhadizadeh ,&nbsp;J. Salamania ,&nbsp;M.A. Sortica ,&nbsp;D. Primetzhofer ,&nbsp;M. Odén","doi":"10.1016/j.jcrysgro.2025.128094","DOIUrl":"10.1016/j.jcrysgro.2025.128094","url":null,"abstract":"<div><div>We explore the growth of high-quality epitaxial NbN films on Al₂O₃ (0006) (Sapphire c-plane). The study investigates the structural and electrical characteristics as a function of film thickness. Pole figures analyses reveal the formation of epitaxial growth with two sets of domains, attributed to the differing symmetries of the cubic NbN and rhombohedral Sapphire. We identified the epitaxial relationship as <span><math><mrow><mtext>(0001)[2</mtext><mover><mrow><mtext>1</mtext></mrow><mrow><mo>¯</mo></mrow></mover><mover><mrow><mtext>1</mtext></mrow><mrow><mo>¯</mo></mrow></mover><mtext>0]</mtext></mrow></math></span> <!-->||<!--> <span><math><mrow><mtext>(111)[1</mtext><mover><mrow><mtext>1</mtext></mrow><mrow><mo>¯</mo></mrow></mover><mtext>0]</mtext></mrow></math></span>. Medium and high-resolution X-ray diffractometry shows clear Kiessig fringes, which become asymmetric for thicknesses greater than 18 nm. The asymmetry is inferred to arise from relaxed domains dispersed in the film in low concentrations near the substrate-film interface and then become more widespread with increased thickness based on dynamical XRD simulation and dark field transition electron microscopy. All films display a rocking curve consisting of an intense sharp peak, accompanied by a broader peak that intensifies as the thickness increases. The sharp peak reflects a highly ordered, long-range correlated structure within NbN, while the broadened peak indicates regions of slightly misoriented NbN, likely related to strain relaxation in local domains. X-ray reflectivity indicates that the mass density is higher than bulk NbN for the thinnest films, it decreases as the films grow thicker and stabilizes at 7.8 g·cm⁻³ for films thicker than ∼ 70 nm. As thickness increases, the lattice constant decreases due to relaxation, which also impacts the electrical resistivity. The strained films exhibit slightly lower resistivity than the relaxed films, likely due to the higher crystallinity of the thinner films.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"656 ","pages":"Article 128094"},"PeriodicalIF":1.7,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143429280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}