非中心对称材料YCoC2的单晶生长、磁性和输运性质研究

IF 2 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2025-10-13 DOI:10.1016/j.jcrysgro.2025.128343

Debajani Rout , R. Kulkarni , A. Thamizhavel , Santosh Kumar

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引用次数: 0

摘要

本文报道了在四弧炉中，用Czochralski法生长非中心对称材料YCoC2的单晶。该化合物属于稀土过渡金属碳化物家族，其成员表现出广泛的有趣现象，包括拓扑半金属行为。我们研究了YCoC2的磁性和输运性质。电阻率测量结果显示在4 <； T <； 300 K的温度范围内具有典型的金属行为。在T = 3.9(1) K时，磁化率和电阻率测量值都发生了转变。在不同磁场下进行的温度相关磁化强度M(T)和电阻率ρ(T)测量详细探讨了这一特征。

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Single crystal growth, study of magnetic and transport properties in the noncentrosymmetric material YCoC2

We report the growth of single crystals of the non-centrosymmetric material YCoC₂ by the Czochralski technique using a tetra arc furnace. This compound belongs to the family of rare-earth transition-metal carbides, the members of which exhibit a wide range of interesting phenomena including topological semimetallic behaviour. We have investigated the magnetic and transport properties of YCoC₂. The results of resistivity measurements revealed a typical metallic behaviour across the temperature range, 4 < T < 300 K. At T = 3.9(1) K, a transition in both magnetization and resistivity measurements has been observed. This feature has been explored in detail with the temperature-dependent magnetization M(T) and resistivity ρ(T) measurements carried out at different magnetic fields.

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.