Journal of Crystal Growth最新文献_第10页

Systematic characterization and defect analysis of β-Ga2O3 single crystals co-designed by the edge-defined film-fed growth method and numerical analysis 采用边缘定膜生长法和数值分析共同设计的β-Ga2O3单晶的系统表征和缺陷分析

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2025-12-15 Epub Date: 2025-10-21 DOI: 10.1016/j.jcrysgro.2025.128374

Biao Meng , Changshuai Yin , Taiqiao Liu , Yao Lu , Yujie Yan , Yang Cao , Hao Fu , Gai Wu , Kang Liang , Sheng Liu , Zhaofu Zhang

{"title":"Systematic characterization and defect analysis of β-Ga2O3 single crystals co-designed by the edge-defined film-fed growth method and numerical analysis","authors":"Biao Meng , Changshuai Yin , Taiqiao Liu , Yao Lu , Yujie Yan , Yang Cao , Hao Fu , Gai Wu , Kang Liang , Sheng Liu , Zhaofu Zhang","doi":"10.1016/j.jcrysgro.2025.128374","DOIUrl":"10.1016/j.jcrysgro.2025.128374","url":null,"abstract":"<div><div>Co-designed optimization and analysis of thermal field structure and defect formation for high quality <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> single crystal with ultra-wide bandgap has been systematically investigated via edge-defined film-fed growth technique and numerical simulation. To confirm the wafer-scale quality, a collaborative verification scheme is developed at both microscopic and macroscopic scales. The narrow full width at half-maximum (139.82 arcsec) and low average defect density (5.5 × 10<sup>4</sup> cm<sup>−2</sup>) highlight the high quality of the bulk crystal. The overall low defect density in the crystal is confirmed through rotated electron spin resonance owing to the appearance of angle-independent single peak. The dopant of Zr is verified as the main impurity and the role of Zr, an effective n-type dopant, is investigated by first principles calculation. Moreover, the microscopic mechanism of defect formation is interpreted as atomic arrangement disorder and lattice distortion. This study presents novel proposals and strategies for the advanced improvement and optimization of <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> single crystal growth and defect characterization.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"672 ","pages":"Article 128374"},"PeriodicalIF":2.0,"publicationDate":"2025-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145340022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Growth of ε-GaFeO3 bulk single crystals under controlled growth direction by optical floating zone method in high oxygen partial pressure 用光学浮区法在控制生长方向下生长ε-GaFeO3块状单晶

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2025-12-15 Epub Date: 2025-10-23 DOI: 10.1016/j.jcrysgro.2025.128377

Yuta Takano , Yuki Maruyama , Masanori Nagao , Ryunosuke Kawamura , Satoki Shinozuka , Junji Yamanaka , Keisuke Arimoto , Satoshi Watauchi

{"title":"Growth of ε-GaFeO3 bulk single crystals under controlled growth direction by optical floating zone method in high oxygen partial pressure","authors":"Yuta Takano , Yuki Maruyama , Masanori Nagao , Ryunosuke Kawamura , Satoki Shinozuka , Junji Yamanaka , Keisuke Arimoto , Satoshi Watauchi","doi":"10.1016/j.jcrysgro.2025.128377","DOIUrl":"10.1016/j.jcrysgro.2025.128377","url":null,"abstract":"<div><div>Single crystals of <em>ε</em>-GaFeO<sub>3</sub> were grown using the optical floating zone (OFZ) method. Two-fold symmetrical, facets appeared on the grown crystal surface towards the end of the growth process. The inverse pole figure (IPF) map obtained by electron backscatter diffraction (EBSD) confirmed that the growth direction was the [1 0 0] and the facet plane was the (0 0 1). We also tried to grow a <em>ε</em>-GaFeO<sub>3</sub> crystal along [0 0 1] using a seed crystal. To realize the growth along [0 0 1], further optimalization of the growth conditions such as the sintering temperature of a feed rod and the growth rate of the crystal growth was necessary. The cross sections of the latter part of a crystal grown along [0 0 1] using a seed crystal were found to be (0 0 1), which was consistent with the orientation of the seed crystal. The full width at half maximum (FWHM) of the X-ray rocking curve for (002) of the latter part of the grown crystal was found to be 85.7 arcsec.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"672 ","pages":"Article 128377"},"PeriodicalIF":2.0,"publicationDate":"2025-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145414778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Mask-free selective GaN growth driven by LT-GaN redistribution on patterned CrN buffers 在有图案的CrN缓冲液上由LT-GaN再分配驱动的无掩膜选择性GaN生长

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2025-12-15 Epub Date: 2025-10-20 DOI: 10.1016/j.jcrysgro.2025.128375

Seongho Kang , Yukyeong Cha , Kyu-Yeon Shim , Eojin-Gyere Ham, Dohoon Kim, Dongjin Byun

{"title":"Mask-free selective GaN growth driven by LT-GaN redistribution on patterned CrN buffers","authors":"Seongho Kang , Yukyeong Cha , Kyu-Yeon Shim , Eojin-Gyere Ham, Dohoon Kim, Dongjin Byun","doi":"10.1016/j.jcrysgro.2025.128375","DOIUrl":"10.1016/j.jcrysgro.2025.128375","url":null,"abstract":"<div><div>Gallium nitride (GaN)-based micro-light-emitting diodes (LEDs) have attracted attention as next-generation display devices owing to their low-power and long-life characteristics. In particular, through selective-area growth (SAG) of core–shell structures, m-plane light emission and quantum-confined Stark effect mitigation can be achieved simultaneously. The realization of such structures requires a precise SAG process and an efficient liftoff technique. In this study, a maskless chromium nitride (CrN) dot-patterned substrate was fabricated to implement a selective GaN growth process, and the effect of the initial low-temperature GaN (LT-GaN) layer on SAG was systematically analyzed. By evaluating the surface properties at each growth stage, it was confirmed that the CrN dot region maintained a high-polarity component and surface energy and provided favorable conditions for the selective nucleation of GaN precursors. This is attributed to selective GaN growth exclusively on the CrN dots, resulting from the combined effect of LT-GaN particle reorganization and the surface thermodynamic properties of CrN. This study is experimentally demonstrated for the feasibility of mask-free III-nitride selection growth technology, which can be used as a core technology for future micro-LED processes.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"672 ","pages":"Article 128375"},"PeriodicalIF":2.0,"publicationDate":"2025-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145414776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Research on MOCVD structure design and process parameters based on CFD numerical simulation 基于CFD数值模拟的MOCVD结构设计及工艺参数研究

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2025-12-01 Epub Date: 2025-10-12 DOI: 10.1016/j.jcrysgro.2025.128366

Ya Li , Jing Liang , Yucong Lin , Yu Lu , Zhifeng Wang , Houfu Dai , Jian Li

{"title":"Research on MOCVD structure design and process parameters based on CFD numerical simulation","authors":"Ya Li , Jing Liang , Yucong Lin , Yu Lu , Zhifeng Wang , Houfu Dai , Jian Li","doi":"10.1016/j.jcrysgro.2025.128366","DOIUrl":"10.1016/j.jcrysgro.2025.128366","url":null,"abstract":"<div><div>Zinc oxide (ZnO) films hold significant value in the field of optoelectronic devices due to their exceptional properties as wide bandgap semiconductors. Although Metal-Organic Chemical Vapor Deposition (MOCVD) technology enables the production of high-quality thin film epitaxy, its industrial application continues to encounter persistent challenges related to inadequate deposition uniformity and efficiency. In this research, we employed a novel vertical reaction chamber ZnO-MOCVD device to systematically investigate the synergistic mechanisms governing multiple parameters—including MO source, O source, Ar carrier gas flow rate, and observation window flow rate—through multi-physics coupled numerical simulations and orthogonal experimental design. The results demonstrate that precisely adjusting the O source flow velocity effectively mitigates vortex phenomena within the turntable, thereby stabilizing the laminar flow state. Increasing the inlet flow rate suppresses the thermal buoyancy effect and reduces the risk of gas-phase pre-reaction. The synergistic regulation of MO and O flow velocities significantly enhances the uniformity of diethyl zinc (DEZn) and oxygen (O<sub>2</sub>) distribution. Orthogonal analysis successfully identified the optimal combination of process parameters, resulting in an exceptional deposition rate (0.2049 μm/h) and a coefficient of variation (4 %), thereby fully validating the effectiveness of the multi-parameter collaborative optimization strategy. This research provides an important theoretical foundation for MOCVD equipment process design and offers crucial guidance for advancing the industrial preparation of high-performance ZnO films.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"671 ","pages":"Article 128366"},"PeriodicalIF":2.0,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145326235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low-temperature ECR-PEMOCVD growth of β-Ga2O3 thin films on FTO/glass for potential vertical Schottky diode applications FTO/玻璃上用于垂直肖特基二极管的β-Ga2O3薄膜的低温ECR-PEMOCVD生长

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2025-12-01 Epub Date: 2025-10-04 DOI: 10.1016/j.jcrysgro.2025.128348

Jian Li , Yaxin Zhao , Xuan Wang , Chunyu Ma , Shuang Zhao , Hongsheng Liu , Karpinski Dzmitry , Fuwen Qin

{"title":"Low-temperature ECR-PEMOCVD growth of β-Ga2O3 thin films on FTO/glass for potential vertical Schottky diode applications","authors":"Jian Li , Yaxin Zhao , Xuan Wang , Chunyu Ma , Shuang Zhao , Hongsheng Liu , Karpinski Dzmitry , Fuwen Qin","doi":"10.1016/j.jcrysgro.2025.128348","DOIUrl":"10.1016/j.jcrysgro.2025.128348","url":null,"abstract":"<div><div>The low-temperature growth of β-Ga<sub>2</sub>O<sub>3</sub> thin films on FTO/glass substrates was achieved using ECR-PEMOCVD with TMGa and O<sub>2</sub> as precursors, and their structural, optical, and electrical properties were systematically investigated. XRD results reveal a clear evolution in crystallinity: as the substrate temperature increased from 350 °C to 500 °C and the discharge pressure decreased from 2.0 Pa to 0.5 Pa, the β-Ga<sub>2</sub>O<sub>3</sub> films transitioned from amorphous to polycrystalline, eventually exhibiting strong (110) preferred orientation. XPS analysis confirmed the n-type conductivity of the films. A vertical metal–semiconductor–metal (MSM) Schottky diode based on Ni/n-type β-Ga<sub>2</sub>O<sub>3</sub>/FTO demonstrated a high rectification ratio of 1.57 × 10<sup>3</sup> at ± 4 V, a Schottky barrier height of 0.8–0.9 eV, and a carrier concentration of approximately 2 × 10<sup>16</sup> cm<sup>−3</sup>. These results suggest that ECR-PEMOCVD is a promising approach for the low-temperature deposition of β-Ga<sub>2</sub>O<sub>3</sub> thin films, with great potential for vertical device applications under limited thermal budgets.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"671 ","pages":"Article 128348"},"PeriodicalIF":2.0,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145264435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Influence of substrate atomic symmetry on the epitaxy and rotational domain formation of κ-Ga2O3 衬底原子对称对κ-Ga2O3外延和旋转畴形成的影响

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2025-12-01 Epub Date: 2025-10-14 DOI: 10.1016/j.jcrysgro.2025.128371

Ha Young Kang, Jaeheon Jung, Young Soo Hwang, Roy B. Chung

{"title":"Influence of substrate atomic symmetry on the epitaxy and rotational domain formation of κ-Ga2O3","authors":"Ha Young Kang, Jaeheon Jung, Young Soo Hwang, Roy B. Chung","doi":"10.1016/j.jcrysgro.2025.128371","DOIUrl":"10.1016/j.jcrysgro.2025.128371","url":null,"abstract":"<div><div>This study systematically explores the structural factors influencing κ-phase gallium oxide (κ-Ga<sub>2</sub>O<sub>3</sub>) thin film growth and domain formation on non-basal plane substrates. Accordingly, we grew κ-Ga<sub>2</sub>O<sub>3</sub> thin films using mist chemical vapor deposition on both basal and non-basal plane sapphire (c-, a-, m-, and r-plane) and GaN (c- and m-plane) substrates for analysis. Crystallinity, orientation, and domain structures were assessed by X-ray diffraction including 2θ–ω scans, rocking curves, and φ-scans. On c- and a-plane sapphire and GaN substrates, κ-Ga<sub>2</sub>O<sub>3</sub> with c-axis orientation was selectively stabilized, whereas α-Ga<sub>2</sub>O<sub>3</sub> predominantly formed on r- and m-plane sapphire. Regardless of substrate symmetry, all κ-Ga<sub>2</sub>O<sub>3</sub> films exhibited persistent three-fold rotational domains, highlighting the limitations of current substrate configurations. These results demonstrate the significant influence of substrate atomic arrangement on phase stability and domain control, emphasizing the need for advanced substrate engineering to realize single-domain κ-Ga<sub>2</sub>O<sub>3</sub> thin films with improved crystalline quality.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"671 ","pages":"Article 128371"},"PeriodicalIF":2.0,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145326237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Single crystal growth, study of magnetic and transport properties in the noncentrosymmetric material YCoC2 非中心对称材料YCoC2的单晶生长、磁性和输运性质研究

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2025-12-01 Epub Date: 2025-10-13 DOI: 10.1016/j.jcrysgro.2025.128343

Debajani Rout , R. Kulkarni , A. Thamizhavel , Santosh Kumar

引用次数: 0

Growth of rutile GeO2 nanoneedles supported by in situ microscopy 原位显微镜支持下金红石型GeO2纳米针的生长

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2025-12-01 Epub Date: 2025-10-01 DOI: 10.1016/j.jcrysgro.2025.128351

Alexey S.T. Rybakov, Vu Anton Lie, Louis Mirecki, Jörg August Becker

{"title":"Growth of rutile GeO2 nanoneedles supported by in situ microscopy","authors":"Alexey S.T. Rybakov, Vu Anton Lie, Louis Mirecki, Jörg August Becker","doi":"10.1016/j.jcrysgro.2025.128351","DOIUrl":"10.1016/j.jcrysgro.2025.128351","url":null,"abstract":"<div><div>Rutile GeO<sub>2</sub> nanoneedles were grown using a method involving eutectics of the Ge-GeO<sub>2</sub> system and chemical transport reactions. The synthesis was carried out at 1095–1215 K in a miniature cell, which is evacuated and sealed, enclosing all products that are generated in reactions. In this cell, one can observe the processes throughout all stages of the method in situ via video microscopy. Differences in the process development depending on the heating time and mass ratio of reagents were revealed. Depending on the latter condition, two ways for growing nanoneedles have been proposed. The needles and other reaction products were studied ex situ using SEM, dark-field and bright-field TEM, HRTEM, SAED, EDX and Raman spectroscopy. The nanoneedles are single crystals without any amorphous surface layer. They are rutile GeO<sub>2</sub> and belong to the tetragonal crystal system. Their longitudinal growth direction is <span><math><mrow><mfenced><mrow><mn>001</mn></mrow></mfenced></mrow></math></span>. The spacings between lattice planes in the longitudinal and lateral directions are found to be 2.8 Å and 3.2 Å respectively. At higher temperatures, larger micrometre-sized crystals of rutile GeO<sub>2</sub> with various morphologies are formed.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"671 ","pages":"Article 128351"},"PeriodicalIF":2.0,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145236183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Growth of large-sized α-HH via Mg2+-involved atmospheric salt bath-stirring strategy: crystallization mechanism and enhanced mechanical properties Mg2+参与的常压盐浴搅拌策略下大尺寸α-HH的生长：结晶机理和力学性能的增强

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2025-12-01 Epub Date: 2025-10-11 DOI: 10.1016/j.jcrysgro.2025.128356

Yisong Yang , Sha Chen , Zhishun Wei , Ying Chang , Yan Xiong , Junxiang Zhao , Hu Zhu , Min Li , Qirui Yang , Guoqiang Yi

{"title":"Growth of large-sized α-HH via Mg2+-involved atmospheric salt bath-stirring strategy: crystallization mechanism and enhanced mechanical properties","authors":"Yisong Yang , Sha Chen , Zhishun Wei , Ying Chang , Yan Xiong , Junxiang Zhao , Hu Zhu , Min Li , Qirui Yang , Guoqiang Yi","doi":"10.1016/j.jcrysgro.2025.128356","DOIUrl":"10.1016/j.jcrysgro.2025.128356","url":null,"abstract":"<div><div>This study proposes a method involving stirring after a constant-temperature water bath in a salt solution to enhance the crystal size, overall homogeneity, and hydration strength of α-hemihydrate gypsum (α-HH). Utilizing by-product gypsum from the chlor-alkali industry as raw material, the influence of Mg<sup>2+</sup> ions on phase evolution and final morphology was systematically investigated. During the constant-temperature water bath process in salt solution, the neutral MgSO<sub>4</sub><sup>0</sup> ion pairs formed by Mg<sup>2+</sup> and SO<sub>4</sub><sup>2-</sup> facilitated the dissolution of dihydrate gypsum (DH) while amplifying the solubility difference between α-HH and DH, thereby promoting preferential crystallization and precipitation of α-HH. Furthermore, Mg<sup>2+</sup> inhibited crystal growth along the c-axis direction during α-HH development, effectively reducing the aspect ratio. The subsequent stirring process significantly increased secondary nucleation probability, enabling mutual adhesion among α-HH crystals of varying dimensions. This synergistic process ultimately yielded enlarged α-HH crystals with an average particle size of 143.21 μm and aspect ratio of 5.57. The flexural strength and absolute dry compressive strength of bulk samples prepared from these α-HH crystals are discussed in detail, demonstrating substantial improvements in mechanical properties compared to conventional preparation methods.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"671 ","pages":"Article 128356"},"PeriodicalIF":2.0,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145326233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ostwald ripening behind the hierarchical structure evolution of titanium phosphate 奥斯特瓦尔德成熟背后的磷酸钛分级结构演化

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2025-12-01 Epub Date: 2025-10-17 DOI: 10.1016/j.jcrysgro.2025.128373

Anton Abramian , Danil Man’ko , Valeria Zakharchenkova , Viacheslav Avdin , Oleg Bol’shakov

{"title":"Ostwald ripening behind the hierarchical structure evolution of titanium phosphate","authors":"Anton Abramian , Danil Man’ko , Valeria Zakharchenkova , Viacheslav Avdin , Oleg Bol’shakov","doi":"10.1016/j.jcrysgro.2025.128373","DOIUrl":"10.1016/j.jcrysgro.2025.128373","url":null,"abstract":"<div><div>Control over nano- and microstructure of metal oxide materials is increasingly important, as it allows for fine-tuning their functionality. Material science provided a plethora of template and template-free methods to synthesize substrates with developed morphology, high crystallinity, and large specific concentration of reactive centers. Titanium phosphates (TiP), a wide group of materials composed of earth-abundant elements, are a versatile platform for the development of materials with customizable morphology and elemental composition. Ease of their synthesis and modification provided multiple sorbents, catalysts, energy capacitor electrodes and polymer additives. Elaboration of hierarchical structures in titanium phosphates beyond the regular and uniform nanocrystalline units produced substrates with a significant surplus in functionality. Although further studies in this direction seem perspective, little work was devoted to controlling features of the TiP hierarchical structure. Here, we report on a screening of general thermodynamic parameters of the hydrothermal synthesis of microspherical titanium phosphate. TiP microspheres change in size according to the Ostwald ripening mechanism with full retention of hierarchical structure. Deviations from this mechanism observed at high concentrations of phosphoric acid are explained in relation to the features of the constituting elements of the microspheres.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"671 ","pages":"Article 128373"},"PeriodicalIF":2.0,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145360107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0