Jiashun Si , Xuefeng Xiao , Yan Huang , Yan Zhang , Shuaijie Liang , Qingyan Xu , Huan Zhang , Lingling Ma , Cui Yang , Xuefeng Zhang
{"title":"Preparation and surface morphology analysis of near stoichiometric lithium tantalate crystals by the vapour transfer equilibrium method","authors":"Jiashun Si , Xuefeng Xiao , Yan Huang , Yan Zhang , Shuaijie Liang , Qingyan Xu , Huan Zhang , Lingling Ma , Cui Yang , Xuefeng Zhang","doi":"10.1016/j.jcrysgro.2025.128105","DOIUrl":null,"url":null,"abstract":"<div><div>In this paper, near stoichiometric lithium tantalate wafers with different Li contents were prepared by the vapour transfer equilibrium method, and the surface morphology of the diffused material and wafers were analyzed. X-ray diffraction and scanning electron microscopy tests were conducted on the diffused material and used diffused material, and it was found that the Li content in the used diffused material decreased, the crystal particle size increased, the lattice parameters decreased, and the crystallinity increased. By analyzing the Curie temperature, scanning electron microscopy, and atomic force microscopy tests of near stoichiometric lithium tantalate wafers prepared by different processes, it was found that the Li ions diffused into the wafers are related to the diffusion temperature, and the higher the diffusion temperature, the smaller the surface roughness of the wafer. When the Li/Ta ratio in the diffused material is equal to or exceeds 70/30, twins will appear on the wafer surface. Through the above analysis, the optimum diffusion temperature range for preparing near stoichiometric lithium tantalate wafers is 1160–1260 ℃, and the Li/Ta ratio in the diffused material should not exceed 70/30, which provides an empirical reference for the preparation of near stoichiometric lithium tantalate crystals with better performance by vapour transfer equilibrium method.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"657 ","pages":"Article 128105"},"PeriodicalIF":1.7000,"publicationDate":"2025-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022024825000533","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
Preparation and surface morphology analysis of near stoichiometric lithium tantalate crystals by the vapour transfer equilibrium method
In this paper, near stoichiometric lithium tantalate wafers with different Li contents were prepared by the vapour transfer equilibrium method, and the surface morphology of the diffused material and wafers were analyzed. X-ray diffraction and scanning electron microscopy tests were conducted on the diffused material and used diffused material, and it was found that the Li content in the used diffused material decreased, the crystal particle size increased, the lattice parameters decreased, and the crystallinity increased. By analyzing the Curie temperature, scanning electron microscopy, and atomic force microscopy tests of near stoichiometric lithium tantalate wafers prepared by different processes, it was found that the Li ions diffused into the wafers are related to the diffusion temperature, and the higher the diffusion temperature, the smaller the surface roughness of the wafer. When the Li/Ta ratio in the diffused material is equal to or exceeds 70/30, twins will appear on the wafer surface. Through the above analysis, the optimum diffusion temperature range for preparing near stoichiometric lithium tantalate wafers is 1160–1260 ℃, and the Li/Ta ratio in the diffused material should not exceed 70/30, which provides an empirical reference for the preparation of near stoichiometric lithium tantalate crystals with better performance by vapour transfer equilibrium method.
期刊介绍:
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.