IF 1.7 4区 材料科学 Q3 CRYSTALLOGRAPHY
Jiashun Si , Xuefeng Xiao , Yan Huang , Yan Zhang , Shuaijie Liang , Qingyan Xu , Huan Zhang , Lingling Ma , Cui Yang , Xuefeng Zhang
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引用次数: 0

摘要

本文采用汽相转移平衡法制备了不同锂含量的近化学计量钽酸锂晶片,并分析了扩散材料和晶片的表面形貌。对扩散材料和使用过的扩散材料进行了 X 射线衍射和扫描电子显微镜测试,发现使用过的扩散材料中的锂含量降低,晶体粒径增大,晶格参数降低,结晶度增加。通过分析不同工艺制备的近化学计量钽酸锂晶片的居里温度、扫描电子显微镜和原子力显微镜测试,发现扩散到晶片中的锂离子与扩散温度有关,扩散温度越高,晶片表面粗糙度越小。当扩散材料中的 Li/Ta 比等于或超过 70/30 时,晶片表面会出现孪晶。通过以上分析,制备近化学计量钽酸锂晶圆的最佳扩散温度范围为 1160-1260 ℃,扩散材料中的 Li/Ta 比值不应超过 70/30,这为利用汽相转移平衡法制备性能更好的近化学计量钽酸锂晶体提供了经验参考。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Preparation and surface morphology analysis of near stoichiometric lithium tantalate crystals by the vapour transfer equilibrium method
In this paper, near stoichiometric lithium tantalate wafers with different Li contents were prepared by the vapour transfer equilibrium method, and the surface morphology of the diffused material and wafers were analyzed. X-ray diffraction and scanning electron microscopy tests were conducted on the diffused material and used diffused material, and it was found that the Li content in the used diffused material decreased, the crystal particle size increased, the lattice parameters decreased, and the crystallinity increased. By analyzing the Curie temperature, scanning electron microscopy, and atomic force microscopy tests of near stoichiometric lithium tantalate wafers prepared by different processes, it was found that the Li ions diffused into the wafers are related to the diffusion temperature, and the higher the diffusion temperature, the smaller the surface roughness of the wafer. When the Li/Ta ratio in the diffused material is equal to or exceeds 70/30, twins will appear on the wafer surface. Through the above analysis, the optimum diffusion temperature range for preparing near stoichiometric lithium tantalate wafers is 1160–1260 ℃, and the Li/Ta ratio in the diffused material should not exceed 70/30, which provides an empirical reference for the preparation of near stoichiometric lithium tantalate crystals with better performance by vapour transfer equilibrium method.
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来源期刊
Journal of Crystal Growth
Journal of Crystal Growth 化学-晶体学
CiteScore
3.60
自引率
11.10%
发文量
373
审稿时长
65 days
期刊介绍: The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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