The effect of transition metal ions on the phase formation during the hydrothermal synthesis of barium hexaferrite

IF 1.7 4区 材料科学 Q3 CRYSTALLOGRAPHY
A.Yu. Mironovich , V.G. Kostishin , G.A. Skorlupin , E.S. Savchenko , A.I. Ril
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引用次数: 0

Abstract

In this study, the effect of certain transition metal cations (Cr3+, Ni2+, Co2+ and Mn2+) on the hydrothermal synthesis of barium hexaferrite was investigated. It was found that the addition of Co2+ and Mn2+ significantly promotes the formation of the hexaferrite phase. In other cases, the dominant product of the reaction was the non-magnetic ferrihydrite. The mechanism by which hexaferrite forms in the presence of Co2+ or Mn2+ was discussed. The hexaferrites obtained in this work were nanoplates with a thickness of no more than 20 nm and a diameter ranging from 80 to 400 nm. These powders had a low saturation magnetization (<20 emu/g) and coercivity (<450 Oe). Although the magnetism of these hexaferrite nanoplates is relatively weak, they can still be manipulated by external magnetic field and could be used to prepare anisotropic hexaferrite materials. Pierre Muller
水热合成六铁氧体钡过程中过渡金属离子对相形成的影响
本研究考察了过渡金属阳离子(Cr3+、Ni2+、Co2+和Mn2+)对水热合成六铁酸钡的影响。结果表明,Co2+和Mn2+的加入显著促进了六铁素体相的形成。在其他情况下,反应的主要产物是非磁性水合铁。讨论了Co2+或Mn2+存在下六铁素体形成的机理。本研究获得的六铁氧体是厚度不超过20 nm,直径在80 ~ 400 nm之间的纳米板。这些粉末具有较低的饱和磁化强度(20 emu/g)和矫顽力(450 Oe)。虽然这些六铁体纳米片的磁性相对较弱,但它们仍然可以被外磁场操纵,可以用来制备各向异性的六铁体材料。皮埃尔•穆勒
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来源期刊
Journal of Crystal Growth
Journal of Crystal Growth 化学-晶体学
CiteScore
3.60
自引率
11.10%
发文量
373
审稿时长
65 days
期刊介绍: The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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