Journal of Crystal Growth最新文献_第9页

Corrigendum to “Enabling MOCVD production on next generation 150 mm Indium Phosphide wafer size” [J. Cryst. Growth 643 (2024) 127793] 下一代 150 毫米磷化铟晶片上的 MOCVD 生产"[J. Cryst. Growth 643 (2024) 127793] 更正

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2024-09-24 DOI: 10.1016/j.jcrysgro.2024.127899

I. Miccoli, G. Simkus, H. Larhrib, T. Korst, M. Mukinovic, J. Holzwarth, M. Heuken

引用次数: 0

Microstructural characterization of InP films on SOI (001) substrates grown by selective lateral metal-Organic vapor-Phase epitaxy 通过选择性横向金属有机气相外延技术在 SOI (001) 衬底上生长的 InP 薄膜的微观结构特征

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2024-09-24 DOI: 10.1016/j.jcrysgro.2024.127903

Hiroya Homma, Hiroki Sugiyama, Tatsurou Hiraki, Tomonari Sato, Shinji Matsuo

{"title":"Microstructural characterization of InP films on SOI (001) substrates grown by selective lateral metal-Organic vapor-Phase epitaxy","authors":"Hiroya Homma, Hiroki Sugiyama, Tatsurou Hiraki, Tomonari Sato, Shinji Matsuo","doi":"10.1016/j.jcrysgro.2024.127903","DOIUrl":"10.1016/j.jcrysgro.2024.127903","url":null,"abstract":"<div><div>To achieve monolithic integration of Si-waveguide-coupled III-V laser diodes, it is important to establish a method of growing high-quality III-V materials on large Si wafers without a thick buffer layer. Here, the lateral aspect ratio trapping (LART) method has recently been attracting attention because of its potential for integrating large-area and high-quality III-V films on (001)-oriented silicon-on-insulator (SOI) substrates. In this paper, we report a detailed microstructural analysis of InP films that were fabricated on (001) SOI substrates by using metal–organic vapor-phase epitaxy and the LART method. The obtained films had an area of around 50 x 4 μm2, which is large enough for them to be used as templates in photonics device fabrication. Transmission electron microscopy revealed that propagation of threading dislocations in the Si/InP interface region was suppressed. However, the films tended to contain other planar defects, such as stacking faults, rotational twin boundaries, and anti- phase boundaries. We discuss the mechanisms underlying the generation of these defects and approaches to suppressing their formation.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"648 ","pages":"Article 127903"},"PeriodicalIF":1.7,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142357242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Growth, optical and thermal properties of YbxSm1-xCa4O(BO3)3 crystals YbxSm1-xCa4O(BO3)3 晶体的生长、光学和热学特性

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2024-09-23 DOI: 10.1016/j.jcrysgro.2024.127902

Chen Yang, Linwen Jiang, Yanqing Zheng, Tuanjie Liang, Zhongjun Tian, Zhigang Sun

{"title":"Growth, optical and thermal properties of YbxSm1-xCa4O(BO3)3 crystals","authors":"Chen Yang, Linwen Jiang, Yanqing Zheng, Tuanjie Liang, Zhongjun Tian, Zhigang Sun","doi":"10.1016/j.jcrysgro.2024.127902","DOIUrl":"10.1016/j.jcrysgro.2024.127902","url":null,"abstract":"<div><div>Yb<sub>x</sub>Sm<sub>1-x</sub>COB (x = 0.1, 0.2) crystals were grown by the Bridgman method for the first time. The purpose of this paper is to evaluate the application prospect of Yb:SmCOB crystal in quasi-parametric chirped pulse amplification (QPCPA) and frequency-doubling laser. The phase structure, thermal properties and optical properties of Yb:SmCOB were studied, and the density of states of SmCOB crystal was calculated by first-principles. The effective segregation coefficient <em>K<sub>eff</sub></em> of Yb<sub>0.1</sub>Sm<sub>0.9</sub>COB and Yb<sub>0.2</sub>Sm<sub>0.8</sub>COB crystals are 0.89 and 0.88, respectively. The thermal diffusivity and thermal conductivity of Yb:SmCOB decrease with increasing temperature. The specific heat increases with the increase of temperature and eventually tends to be constant. The specific heat of Yb:SmCOB crystal is greater than 0.70 J/(g·K) at room temperature. The transmittance of Yb:SmCOB crystal reaches 87 % in the range of 500 ∼ 900 nm. With the increase of Yb<sup>3+</sup> doping concentration, the UV absorption cut-off edge is red shifted. The frequency doubling emission peak of Yb:SmCOB crystal at 490 nm was measured by 980 nm laser. Yb:SmCOB has the characteristics of high transmittance and high specific heat, and has application potential in laser frequency doubling and QPCPA.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"648 ","pages":"Article 127902"},"PeriodicalIF":1.7,"publicationDate":"2024-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142357241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A four-way coupled numerical investigation of draft tube baffled crystallizer 牵伸管折流式结晶器的四向耦合数值研究

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2024-09-22 DOI: 10.1016/j.jcrysgro.2024.127887

Jamal Darand, Alireza Fashami, Ali Jafarian

{"title":"A four-way coupled numerical investigation of draft tube baffled crystallizer","authors":"Jamal Darand, Alireza Fashami, Ali Jafarian","doi":"10.1016/j.jcrysgro.2024.127887","DOIUrl":"10.1016/j.jcrysgro.2024.127887","url":null,"abstract":"<div><div>In the present paper, the liquid–solid two-phase turbulent flow in a Draft Tube Baffled crystallizer has been simulated using Computational Fluid Dynamics. In this respect, multiphase Eulerian model along with population balance equations were applied. To implement four-way coupling, aggregation and breakage were considered. The RNG k-ε and RSM turbulence models were employed to conduct numerical simulation of two phase turbulent flow. Results demonstrated that applying RNG k-ε and RSM turbulence models, a significant difference in axial velocity profiles along the x-axis is observed, while those along the z-axis exhibit less difference. Moreover, a significant difference in volume fraction between the two models was observed which mostly concerns the region within the draft tube and the distance between the baffle and crystallizer wall. Furthermore, changing the propeller speed from 165 to 495 rpm, the speed of 330 rpm showed to be optimal in terms of particles residence time. The results also showed that a rise in impeller speed is one of the major contributors to mass exchange enhancement between the liquid and the solid phases. Accordingly, as the impeller speed rises, the rate of mass exchange increases from 9.92 kg/h for 165 rpm to 29.07 kg/h for 495 rpm.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"648 ","pages":"Article 127887"},"PeriodicalIF":1.7,"publicationDate":"2024-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142419057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Oxygen precipitation behavior and its influence on phosphorus gettering in Czochralski silicon 氧析出行为及其对 Czochralski 硅中磷烧结的影响

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2024-09-21 DOI: 10.1016/j.jcrysgro.2024.127898

Zhiyong Cun , Qinglin Jin , Shaoyuan Li

引用次数: 0

Unraveling conditions for W-shaped interface and undercooled melts in Cz-Si growth: A smart approach 揭示晶体硅生长过程中 W 型界面和过冷熔体的条件：智能方法

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2024-09-19 DOI: 10.1016/j.jcrysgro.2024.127897

Natasha Dropka , Milena Petkovic , Klaus Böttcher , Martin Holena

{"title":"Unraveling conditions for W-shaped interface and undercooled melts in Cz-Si growth: A smart approach","authors":"Natasha Dropka , Milena Petkovic , Klaus Böttcher , Martin Holena","doi":"10.1016/j.jcrysgro.2024.127897","DOIUrl":"10.1016/j.jcrysgro.2024.127897","url":null,"abstract":"<div><div>In Cz-Si growth, concave and W-shaped solid–liquid interfaces and undercooled melts are primary contributors to the degradation of crystal quality, particularly structure loss, defect generation, non-uniform dopant distribution, and crystal twisting, making their avoidance crucial. We employed a classification tree machine learning approach to investigate the importance of 15 process and furnace design parameters and their critical ranges for the formation of various types of W-shaped interfaces and undercooled melts at different scales, both in dimensional and dimensionless forms, and across a wide range of process conditions. Moreover, symbolic regression was used to predict minimal melt temperature based on the aforementioned inputs. Training data were obtained by CFD modeling. The classification tree for combined output identified the Grashof, Reynolds for crystal, and Stefan numbers, along with the percentage of silicon solidified, as the most decisive inputs. Symbolic regression for the temperature of undercooled melt highlighted crucible diameter, pulling rate, and the power of the bottom heater as key parameters.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"648 ","pages":"Article 127897"},"PeriodicalIF":1.7,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S0022024824003324/pdfft?md5=34a0fe338bcaf4c120b8df14de8aa57c&pid=1-s2.0-S0022024824003324-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142314603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Structural characteristics of glycine aggregates grown under sub-Terahertz irradiation 亚太赫兹辐照下生长的甘氨酸聚合体的结构特征

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2024-09-19 DOI: 10.1016/j.jcrysgro.2024.127889

Mana Kusama , Kazuma Iwasaki , Sho Fujii , Tsuyoshi Kimura , Masaya Yamamoto , Tadao Tanabe

引用次数: 0

Crystal growth and magnetocaloric effect of Li9Fe3(P2O7)3(PO4)2 with Kagome lattice 具有 Kagome 晶格的 Li9Fe3(P2O7)3(PO4)2 的晶体生长和磁致效应

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2024-09-19 DOI: 10.1016/j.jcrysgro.2024.127896

Yicai Zhang , Zuhua Chen , Shilin Yu , Guochun Zhang , Jiahao Gao , Changkun Wang , Qiaoyan Dong , Jun Shen , Heng Tu

引用次数: 0

Controlling the thiourea for optimized growth of CdS nanorod arrays for improved photoelectrochemical water splitting 控制硫脲以优化 CdS 纳米棒阵列的生长，从而提高光电化学水分离效果

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2024-09-16 DOI: 10.1016/j.jcrysgro.2024.127893

Rem Yann , Sreymean Ngok , Magnus Willander , Chan Oeurn Chey , Omer Nur

{"title":"Controlling the thiourea for optimized growth of CdS nanorod arrays for improved photoelectrochemical water splitting","authors":"Rem Yann , Sreymean Ngok , Magnus Willander , Chan Oeurn Chey , Omer Nur","doi":"10.1016/j.jcrysgro.2024.127893","DOIUrl":"10.1016/j.jcrysgro.2024.127893","url":null,"abstract":"<div><p>Energy and the environment are very important issues to secure, preserve and improve our modern lifestyle. The conversion of sunlight into hydrogen and oxygen via photoelectrochemical (PEC) water splitting is one of the most potential routes for clean energy. Cadmium sulfide (CdS) is a promising semiconductor for utilization as a photoanode. In this work, CdS has been grown via the hydrothermal method by optimizing the thiourea concentration. The growth of CdS with equal concentration of Cd<sup>2+</sup> and S<sup>2-</sup>demonstrates the crowded hexagonal-shaped nanorod arrays with small diameter and relatively longer length, and it exhibits the highest photocurrent density due to some factors, such as high length-to-diameter ratio, large reaction area, suitable flat band potential, slow charge recombination rate, fast charge transfer, suitable conduction and valence band edges, and surface reaction kinetics. This work will be of potential to further develop improved nanocomposites of CdS nanorods for hydrogen production and research in related fields.</p></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"648 ","pages":"Article 127893"},"PeriodicalIF":1.7,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S0022024824003282/pdfft?md5=7dd96823760ed6da3cf91788d41f41e4&pid=1-s2.0-S0022024824003282-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142239893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Growth of CuO NPs layers on TiO2 NTs using vacuum thermal evaporation 利用真空热蒸发技术在二氧化钛氮氧化物上生长氧化铜氮氧化物层

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2024-09-16 DOI: 10.1016/j.jcrysgro.2024.127895

Loubaba Attou , Habiba Mamori , Boujemaâ Jaber , Hamid Ez-Zahraouy , Khadija El Maalam , Mohamed Balli

{"title":"Growth of CuO NPs layers on TiO2 NTs using vacuum thermal evaporation","authors":"Loubaba Attou , Habiba Mamori , Boujemaâ Jaber , Hamid Ez-Zahraouy , Khadija El Maalam , Mohamed Balli","doi":"10.1016/j.jcrysgro.2024.127895","DOIUrl":"10.1016/j.jcrysgro.2024.127895","url":null,"abstract":"<div><p>CuO/TiO<sub>2</sub> composites have been reported to exhibit higher potential for various applications (electronics, energy storage, and sensor technology…). This study investigates the impact of different film thicknesses on the properties of CuO NPs on TiO<sub>2</sub> NTs. CuO NPs were deposited onto TiO<sub>2</sub> NTs using vacuum thermal evaporation, with thicknesses ranging from 5 to 30 nm. A quartz crystal monitor measured evaporation rate and film thickness at a substrate temperature of 350 °C. Following the deposition process, the samples were thermally treated through air annealing at 400 °C for 1 h.</p><p>XRD analysis showed that all films had an anatase phase. The annealed sample also had a confirmed CuO phase, indicating good crystallinity. Crystallite size and strain varied with film thickness, assessed using the Williamson-Hall method and Rietveld refinement. The deposition and distribution of CuO on TiO<sub>2</sub> NTs were verified using Scanning Electron Microscopy (SEM) combined with energy dispersive spectroscopy (EDS). Optimizing the materials nanostructures requires controlling film thickness and annealing. Insights from this study can improve nanomaterial fabrication techniques, which could enhance their performance in technological applications.</p></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"648 ","pages":"Article 127895"},"PeriodicalIF":1.7,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142239891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0