Journal of Crystal Growth最新文献

{"title":"Numerical investigation of oxygen concentration and v/G distribution in 300 mm Czochralski silicon","authors":"Anchen Tang ,&nbsp;Xuefeng Han ,&nbsp;Shuai Yuan ,&nbsp;Yu Gao ,&nbsp;Jianwei Cao ,&nbsp;Xiangyang Ma ,&nbsp;Deren Yang","doi":"10.1016/j.jcrysgro.2025.128184","DOIUrl":"10.1016/j.jcrysgro.2025.128184","url":null,"abstract":"<div><div>To ensure the growth of high-quality semiconductor-grade Czochralski (Cz) silicon, it is crucial to control the oxygen concentration within a specified range tailored to different device applications. This study presents a two-dimensional, axisymmetric global model for heat and mass transfer during the growth of 300 mm semiconductor-grade Cz silicon crystals, based on the quasi-steady-state assumption. Intuitive distributions of oxygen concentration in both the melt and the crystal are illustrated at various solidification fractions. Simulation results are compared with our experimental results and those reported in literatures. Additionally, <span><math><mrow><mi>v</mi><mo>/</mo><mi>G</mi></mrow></math></span> distribution in the crystal is presented according to Voronkov’s theory. Furthermore, the effects of turbulence models on the oxygen distribution and <span><math><mrow><mi>v</mi><mo>/</mo><mi>G</mi></mrow></math></span> distribution are investigated. The results reveal that the <em>k</em>-ω turbulence model predicts a lower oxygen concentration compared to the <em>k</em>-ε model, and there is no significant difference in the <span><math><mrow><mi>v</mi><mo>/</mo><mi>G</mi></mrow></math></span> distributions.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"663 ","pages":"Article 128184"},"PeriodicalIF":1.7,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143829942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimization of temperature field and crystal growth in the PVT method for high-quality 8-inch silicon carbide single crystal growth","authors":"Youfu Ji ,&nbsp;Xiaocheng Wang ,&nbsp;Junjie Zhang ,&nbsp;Boqian Liu ,&nbsp;Junzhi Yang ,&nbsp;Guanying Chen ,&nbsp;Shengtao Zhang","doi":"10.1016/j.jcrysgro.2025.128181","DOIUrl":"10.1016/j.jcrysgro.2025.128181","url":null,"abstract":"<div><div>Silicon carbide (SiC), as a key wide-bandgap semiconductor material, has shown tremendous potential in power devices and radio-frequency electronic applications. In this study, a resistive heating physical vapor transport (PVT) method was employed, and a three-dimensional crystal growth system model was developed to design and optimize the thermal field structure. Finite element analysis was performed using COMSOL Multiphysics to assess the impact of the optimized design on the temperature field and crystal growth. The results revealed that adding insulation materials above and below the resistive heater to form a closed insulation structure significantly enhanced the thermal conductivity, reducing energy consumption by over 45% and improving the uniformity of seed crystal temperature distribution. By adding graphite blocks in the material zone and adjusting the slope height of the material surface, the radial temperature gradient within the 0-100 mm seed crystal radius showed excellent uniformity, although further optimization of the axial temperature gradient is still required. Moreover, the seed crystal fixation method has a significant impact on the growth process, especially when the support contacts the seed crystal, which may cause a sudden change in the temperature gradient at the seed crystal edges, thereby increasing the risk of defects. This study provides important insights for the efficient preparation of high-quality, large-sized SiC single crystals.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"664 ","pages":"Article 128181"},"PeriodicalIF":1.7,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143869916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comparative analysis of machine learning approaches for predicting and interpreting Cz-sapphire growth","authors":"Xia Tang,&nbsp;Milena Petković,&nbsp;Gagan-Kumar Chappa,&nbsp;Lucas Vieira,&nbsp;Natasha Dropka","doi":"10.1016/j.jcrysgro.2025.128185","DOIUrl":"10.1016/j.jcrysgro.2025.128185","url":null,"abstract":"<div><div>This study evaluates four machine learning (ML) “white-box” methods − Decision Trees, Linear Regression, Python Symbolic Regression (PySR), and Sure Independence Screening and Sparsity Operation (SISSO) − and five “gray-box” methods − Gradient Boosting, XGBoost, Support Vector Machines (SVM), Gaussian Processes, and Random Forests − for analyzing data from the Cz-sapphire crystal growth process. The objective is to develop a model that achieves a balance between high predictive accuracy and interpretability in this small-data domain.</div><div>Twelve input variables − including process parameters, sapphire optical properties, and furnace geometry parameters − were analyzed in relation to five output variables: heating power, interface deflection, temperature gradients averaged at the solid/liquid interface and symmetry axis, and v/G. Using 500 data tuples from CFD simulations, the results highlighted significant performance differences across the models. SVM demonstrated superior performance in predicting temperature gradients, XGBoost excelled in interface deflection predictions, and Gradient Boosting was most effective for v/G. SISSO, known for its high interpretability, performed best in predicting heating power, particularly in cases where nonlinear noise was less pronounced.</div><div>The best performing models for each output generated explicit equations that relate inputs to outputs, feature importance plots, and 3D plots illustrating relationships within the 17-dimensional space. These findings offer theoretical insights for optimizing the Cz-sapphire crystal growth process and design.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"664 ","pages":"Article 128185"},"PeriodicalIF":1.7,"publicationDate":"2025-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143859482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Corrigendum to “New pentaborates for pyrolytic boron nitride” [J. Cryst. Growth 660 (2025) 128160]","authors":"Bo Li ,&nbsp;Weilong Wu ,&nbsp;Zifeng Niu ,&nbsp;Lu Meng ,&nbsp;Haoran Chen ,&nbsp;Shijie Ma ,&nbsp;Jun Zhang ,&nbsp;Wei Tian ,&nbsp;Jahangeer Ahmed ,&nbsp;Chengchun Tang ,&nbsp;Yanming Xue","doi":"10.1016/j.jcrysgro.2025.128176","DOIUrl":"10.1016/j.jcrysgro.2025.128176","url":null,"abstract":"","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"661 ","pages":"Article 128176"},"PeriodicalIF":1.7,"publicationDate":"2025-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143858999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of As2 flux on the growth of InAs/InGaAs dot-in-well structure by molecular beam epitaxy","authors":"Ruo-Tao Liu ,&nbsp;Kun Wang ,&nbsp;Jian-Chu Wu ,&nbsp;Chen Yang ,&nbsp;Hua Huang ,&nbsp;Zheng-He Zhu ,&nbsp;Han Wang ,&nbsp;Chun-Fang Cao ,&nbsp;Jin Yang ,&nbsp;An-Tian Du ,&nbsp;Qian Gong","doi":"10.1016/j.jcrysgro.2025.128193","DOIUrl":"10.1016/j.jcrysgro.2025.128193","url":null,"abstract":"<div><div>This study systematically investigates the growth of InAs/InGaAs dot-in-well (DWELL) structure with a wide range of As₂ flux employed during the growth of InAs dot layer. It is found that As₂ flux plays a very important role in the growth of the DWELL structure, which fundamentally affects the migration length and the desorption rate of In atoms. A non-monotonic variation in the density of InAs quantum dots (QDs) has been observed with varying As₂ flux. In addition, the average width and height of QDs also depends on the As₂ flux. The photoluminescence (PL) peak intensity from the DWELL structure exhibits a remarkable relationship with the As₂ flux, where a maximum intensity enhancement of 90 % was achieved by using the optimized As₂ flux. A total redshift of 58 nm in the peak emission wavelength has been observed within the As₂ flux range studied. Moreover, it has been the first experimental evidence for a distinctive phenomenon that the QDs in the DWELL structure might not be fully capped by the InGaAs layer when the QDs were grown with low As₂ fluxes. Therefore, decomposition of the uncapped portion of QD may occur, resulting in a large blueshift of the PL emission peak from the DWELL structure.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"663 ","pages":"Article 128193"},"PeriodicalIF":1.7,"publicationDate":"2025-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143823524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Pathway and control of oxygen transport in the melt during single crystal silicon growth by continuous-feeding Czochralski method","authors":"Jiancheng Li ,&nbsp;Junlei Wang ,&nbsp;Zeqi Zhong ,&nbsp;Zaoyang Li ,&nbsp;Yong Wen ,&nbsp;Lei Wang ,&nbsp;Lijun Liu","doi":"10.1016/j.jcrysgro.2025.128183","DOIUrl":"10.1016/j.jcrysgro.2025.128183","url":null,"abstract":"<div><div>The continuous-feeding Czochralski (CCz) method is regarded as the most advanced technology for the growth of large-sized single crystal silicon with a uniform axial distribution of impurities. However, the use of double quartz crucibles in this method results in a high concentration of oxygen impurities in the crystal, which has become a technical bottleneck for the widespread adoption of this technology. In this paper, a series of numerical simulations were carried out firstly. It was found that the oxygen transported to the melt-crystal (m-c) interface mainly comes from the dissolution at the crucible wall of growth zone (inside the inner crucible). Furthermore, the diffusion path of oxygen in the melt was creatively elucidated, which has enabled the oxygen transport pathway to be identified. Based on this, the oxygen content of single crystal silicon was reduced by enhancing the forced convection induced by crucible rotation, and the result was verified experimentally.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"662 ","pages":"Article 128183"},"PeriodicalIF":1.7,"publicationDate":"2025-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143815280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The critical role of hydrocarbon source and growth optimization for high-quality thick 4H-SiC epitaxial layers","authors":"Misagh Ghezellou,&nbsp;Jawad Ul-Hassan","doi":"10.1016/j.jcrysgro.2025.128165","DOIUrl":"10.1016/j.jcrysgro.2025.128165","url":null,"abstract":"<div><div>The development of ultra-high power electronic devices based on 4H-SiC relies on the growth of high-quality thick epitaxial layers. Chloride-based chemical vapor deposition is preferred for this purpose, and in this study we show that optimizing the process also requires a careful selection of hydrocarbons as the carbon source. Propane, a common precursor, limits control over the C/Si ratio at high growth rates, leading to defects and even loss of crystallinity. In contrast, methane offers a wider window for C/Si ratio adjustment, enabling further optimization of the epitaxial growth process. Using methane, an optimal growth rate of <span><math><mrow><mn>25</mn><mspace></mspace><mi>μ</mi><mi>m</mi></mrow></math></span>/h is identified at which the minority carrier lifetime is maximized. Additionally, a saturation limit for minority carrier lifetime is observed in layers exceeding a thickness of <span><math><mo>∼</mo></math></span> <span><math><mrow><mn>100</mn><mspace></mspace><mi>μ</mi><mi>m</mi></mrow></math></span>. It is also shown that, although the formation of characteristic surface morphological defects is inevitable, their severity can be controlled by adding additional HCl or increasing the growth rate; however, at a cost of reduced minority carrier lifetime. The growth of <span><math><mrow><mn>125</mn><mspace></mspace><mi>μ</mi><mi>m</mi></mrow></math></span> thick epitaxial wafers with methane and propane demonstrates the advantage of using methane as the carbon source. This is evidenced by a smoother surface, better doping uniformity, and nearly double the minority carrier lifetime compared to the propane-grown wafer. These findings highlight the benefits of methane in growing thick 4H-SiC epitaxial layers for high-power devices.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"661 ","pages":"Article 128165"},"PeriodicalIF":1.7,"publicationDate":"2025-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143791093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modeling solution concentration in cooling crystallization using an ultrasonic probe and image monitoring","authors":"Junjie Li ,&nbsp;Yiting Xiao ,&nbsp;Bo Kong","doi":"10.1016/j.jcrysgro.2025.128178","DOIUrl":"10.1016/j.jcrysgro.2025.128178","url":null,"abstract":"<div><div>Supersaturation during the crystallization process has been a primary focus of research for many years. The ability to measure solution concentration in situ is essential for improving our understanding and control of crystallization. In this paper, we present a solution concentration model for dynamic cooling crystallization based on ultrasonic speed, using L-glutamic acid (LGA) as the case study. The speed of sound and temperature changes of the solution were recorded during the cooling crystallization process. The collected data was categorized into the undersaturated zone (USZ) and the metastable zone (MSZ) for model development. To accurately distinguish between these intervals, a noninvasive imaging device was employed to capture the exact moment of crystal formation. Our results demonstrate the feasibility of using an ultrasonic probe for in situ monitoring of concentration changes during cooling crystallization. Furthermore, an experiment involving LGA cooling crystallization was carried out to validate the model’s sensitivity in detecting the crystallization process.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"662 ","pages":"Article 128178"},"PeriodicalIF":1.7,"publicationDate":"2025-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143792246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Cost-effective, hydride-free aqueous synthesis of CdTe quantum dots enabled by using ammonia as the reducing agent","authors":"Van-Thao Ta ,&nbsp;Duy-Khanh Nguyen ,&nbsp;Xuan-Bach Nguyen ,&nbsp;Phuong-Nam Nguyen ,&nbsp;Sinh-Hung Nguyen ,&nbsp;Xuan-Dung Mai","doi":"10.1016/j.jcrysgro.2025.128182","DOIUrl":"10.1016/j.jcrysgro.2025.128182","url":null,"abstract":"<div><div>The development of a simple, cost-effective, and green method to synthesize CdTe quantum dots (QDs), which are a key nanomaterial in sensing, bioimaging, and immunofluorescence analysis is highly desirable. In this study, we used ammonia in lieu of common hydride reductant to synthesize CdTe QDs by simple refluxing aqueous solutions of cadmium salt, sodium tellurite, and 3-mercaptopropionic acid (MPA). The obtained CdTe QDs were characterized by absorption and photoluminescent spectroscopies, X-ray diffraction (XRD), and transmission electron microscope (TEM). The absorption window and the emission color of QDs were facile controlled over the green–red range by varying the refluxing time. As the QD size increased the crystal structure transformed from CdTe to a CdTeS alloyed form. The results demonstrated herein suggest a cost-effective method for production of CdTe QDs.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"661 ","pages":"Article 128182"},"PeriodicalIF":1.7,"publicationDate":"2025-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143785150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Low and high temperature magnetic properties of MgFe2O4 nanoparticles synthesized by a simple egg white albumin route","authors":"Annrose Sunny ,&nbsp;Kasarapu Venkataramana ,&nbsp;Y. Ranjith Kumar ,&nbsp;M. Vasundhara","doi":"10.1016/j.jcrysgro.2025.128174","DOIUrl":"10.1016/j.jcrysgro.2025.128174","url":null,"abstract":"<div><div>Ferrite type magnetic nanoparticles composed of iron oxide and a metallic element have been attracting considerable interest in manifold applications due to their valuable physical, mechanical, optical, catalytic, and magnetic properties. However, the magnetic properties of ferrite nanoparticles produced via various conventional methods often fall short of the desired specifications for many applications. It is essential to develop an easy, cost-effective, and non-toxic method of preparation. A relatively facile, cost-effective and environment friendly method has been a key focus of research. This study aims to synthesize the MgFe₂O₄ (MFO) spinel ferrite using eco-friendly freshly extracted egg-white albumin method and study the detailed structural as well as the high temperature magnetic characteristics over a wide range of temperature from 2 K to 900 K. The phase purity, particle size, morphology, surface features, elemental confirmation, optical properties, elemental states as well as the magnetic characteristics of the prepared MFO nanoparticles were discussed. The prepared MFO nanoparticles were exhibited a cubic crystal structure in confirmation to a space group of Fd-3 m with an average particle size of 20 nm. UV–Visible absorption analysis of MFO nanoparticles showed an optical band gap of 3.32 eV. Mixed spinel type of MFO is confirmed from XPS spectra. The temperature variation of hysteresis loop suggested a super paramagnetic like behavior, however, a finite coercivity (H_c) was observed. The H_c, M_r, and M_s of the MFO nanoparticles were observed to be 50Oe, 2 emu/g and 26 emu/g, respectively. It was observed from the e M_r/M_s ratio of MFO nanoparticles that the particles are transforming into multi domain in nature above 100 K. The temperature variation of magnetization studies revealed a transition temperature is at around 588 K. Detailed magnetic behavior is investigated and explained by the models supported by theoretical studies.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"662 ","pages":"Article 128174"},"PeriodicalIF":1.7,"publicationDate":"2025-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143792245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}