Koichi Kakimoto , Taketoshi Tomida , Vladimir V. Kochurikhin , Kei Kamada , Satoshi Nakano , Akira Yoshikawa
{"title":"Effects of crystal and melt transparency on twisting of β-Ga2O3 crystals grown by the Czochralski method","authors":"Koichi Kakimoto , Taketoshi Tomida , Vladimir V. Kochurikhin , Kei Kamada , Satoshi Nakano , Akira Yoshikawa","doi":"10.1016/j.jcrysgro.2025.128192","DOIUrl":null,"url":null,"abstract":"<div><div>The twisting of oxide crystals during their growth process is a major problem that has limited their wider application. We previously conducted three-dimensional analyses that indicated the twisting of beta gallium oxide crystals may be affected by their degree of transparency. In this study, we conducted numerical simulations to study the effects of internal radiation in beta gallium oxide crystals and melts on heat transfer during the Czochralski method. The temperature and velocity distributions in the crystal and melt and the shape of the interface between the crystal and melt were obtained. We used the Rosseland approximation to consider the internal radiation in both the crystal and melt to calculate the heat transfer in the furnace. The results indicated that the temperature gradient was smaller in transparent crystal than in opaque crystal while the temperature gradient was slightly smaller in transparent melt than in opaque melt. These results can be attributed to the radiative heat transfer through the crystal and melt: the crystal faces the cold wall of the furnace, which produces a large heat flux for the heat transfer; meanwhile, the melt faces the hot wall of a crucible, which produces a small heat flux for the heat transfer.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"663 ","pages":"Article 128192"},"PeriodicalIF":2.0000,"publicationDate":"2025-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S002202482500140X","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 0
Abstract
The twisting of oxide crystals during their growth process is a major problem that has limited their wider application. We previously conducted three-dimensional analyses that indicated the twisting of beta gallium oxide crystals may be affected by their degree of transparency. In this study, we conducted numerical simulations to study the effects of internal radiation in beta gallium oxide crystals and melts on heat transfer during the Czochralski method. The temperature and velocity distributions in the crystal and melt and the shape of the interface between the crystal and melt were obtained. We used the Rosseland approximation to consider the internal radiation in both the crystal and melt to calculate the heat transfer in the furnace. The results indicated that the temperature gradient was smaller in transparent crystal than in opaque crystal while the temperature gradient was slightly smaller in transparent melt than in opaque melt. These results can be attributed to the radiative heat transfer through the crystal and melt: the crystal faces the cold wall of the furnace, which produces a large heat flux for the heat transfer; meanwhile, the melt faces the hot wall of a crucible, which produces a small heat flux for the heat transfer.
期刊介绍:
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.