Characterization of THM CdZnTe for nuclear radiation detection

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2025-04-14 DOI:10.1016/j.jcrysgro.2025.128196

Song Zhang , Hui Zhang

引用次数: 0

Abstract

CdZnTe crystals with large single-crystal volume have been grown using the travelling heater method. The concentration uniformity, structural defects, and resistivity of the THM crystals were measured. Two planar detectors were fabricated, which achieved a best resolution of 5.12 % at 59.5 keV and a μ_eτ_e value of 8.0 × 10⁻³ cm²/V. A quasi-hemispherical detector was further prepared and achieved a resolution of 2.27 % at 662 keV and a Peak-to-Compton Ratio of 4.76. Progress in crystal growth, processing, detector fabrication and characterization methods and tools contributed to improvement of high-quality CdZnTe crystals for nuclear radiation detectors.

查看原文本刊更多论文

THM CdZnTe用于核辐射检测的表征

采用旅行加热法生长出单晶体积较大的碲化镉晶体。测量了THM晶体的浓度均匀性、结构缺陷和电阻率。制备了两个平面探测器，在59.5 keV下的最佳分辨率为5.12%，μ τe值为8.0 × 10−3 cm2/V。进一步制备了准半球形探测器，在662 keV下分辨率为2.27%，峰-康普顿比为4.76。在晶体生长、加工、探测器制造和表征方法和工具方面的进展，有助于提高高质量的CdZnTe晶体用于核辐射探测器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.