Tb3Ga5O12单晶的Czochralski生长及成分控制

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2025-04-21 DOI:10.1016/j.jcrysgro.2025.128205

Miki Watanabe , Yuki Maruyama , Katsuhiko Nagao , Yutaka Anzai , Masanori Nagao , Satoshi Watauchi , Isao Tanaka

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引用次数: 0

摘要

Tb3Ga5O12 （TGG）单晶具有优异的光隔离特性。然而，通过Czochralski法生长的TGG单晶有时沿生长方向含有径向条纹，这会降低其光隔离特性。这些径向条纹可能是由熔体和晶体之间的成分不匹配引起的。在这项研究中，我们从富tb熔体中生长了25 mmφ TGG单晶，并精确测量了它们的晶格常数。采用烧结多晶TGG测定了其组成与晶格常数之间的关系。根据这些实验，发现同熔成分为37.9 mol% Tb2O3。考虑到晶体生长过程中熔体中Ga2O3的蒸发，使用37.8 mol% Tb2O3的起始材料生长出高质量的50 mmφ TGG单晶，没有径向条纹。我们将TGG起始材料加入到用于生长的坩埚中的残渣中，重复生长TGG单晶，完成四个额外的生长过程。第一次和第五次生长的TGG微球的晶格常数波动在0.0002 Å以内，对应于Tb2O3组成均匀性为0.01 mol% Tb2O3。因此，我们通过优化TGG起始材料的组成为37.8 mol% Tb2O3，成功地在工业上生长出了成分波动仅在0.01 mol%的均匀TGG单晶。

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Czochralski growth and composition control of Tb3Ga5O12 single crystals

Tb₃Ga₅O₁₂ (TGG) single crystals have excellent optical isolator characteristics. However, TGG single crystals grown by the Czochralski method sometimes contain radial stripes along the growth direction, which degrade their optical isolator characteristics. These radial stripes may be caused by a composition mismatch between the melt and crystals. In this study, we grew 25 mmϕ TGG single crystals from Tb-rich melts and precisely measured their lattice constants. The relationship between the composition and lattice constants was determined using sintered polycrystalline TGG. Based on these experiments, the congruent-melting composition was found to be 37.9 mol% Tb₂O₃. High-quality, 50-mmϕ TGG single crystals without radial stripes were grown using a starting material composition of 37.8 mol% Tb₂O₃, considering the evaporation of Ga₂O₃ from the melt during crystal growth. We repeatedly grew TGG single crystals by adding the TGG starting material to the residue in the crucible used for growth to complete four additional growth processes. The fluctuation of in the lattice constant of the TGG boules for the first and fifth growths was within 0.0002 Å, which corresponds to a Tb₂O₃ composition uniformity of 0.01 mol% Tb₂O₃. Therefore, we have succeeded in growing uniform TGG single crystals industrially with composition fluctuations within only 0.01 mol% by optimizing the composition of the TGG starting material to 37.8 mol% Tb₂O₃.

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.