Journal of Crystal Growth最新文献

{"title":"Growth and characterizations of indium doped tin diselenide (InxSn1−x)Se2 crystals","authors":"P.D. Patel , N.N. Prajapati , H.M. Patel , S.P. Sikligar , P.B. Patel , H.N. Desai , J.M. Dhimmar , B.P. Modi","doi":"10.1016/j.jcrysgro.2024.127913","DOIUrl":"10.1016/j.jcrysgro.2024.127913","url":null,"abstract":"<div><div>Nowadays, materials with narrow bandgap of transition metal dichalcogenide layered structures have attracted towards the research due to their substantial and tunable optoelectronic properties. Among the IV-VI compound semiconductor, (In<span><math><msub><mrow></mrow><mrow><mi>x</mi></mrow></msub></math></span>Sn<span><math><msub><mrow></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub></math></span>)Se<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> is potential candidate with higher carrier mobility, sustainability and getting higher carrier concentration with doping. The (In<span><math><msub><mrow></mrow><mrow><mi>x</mi></mrow></msub></math></span>Sn<span><math><msub><mrow></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub></math></span>)Se<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> crystal is layered type crystal grown by direct vapor transport mode within vacuum closed quartz ampoule. The chemical composition of (In<span><math><msub><mrow></mrow><mrow><mi>x</mi></mrow></msub></math></span>Sn<span><math><msub><mrow></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub></math></span>)Se<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> grown crystals have been confirmed by Energy Dispersive X-ray analysis. Also it showed that as grown (In<span><math><msub><mrow></mrow><mrow><mi>x</mi></mrow></msub></math></span>Sn<span><math><msub><mrow></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub></math></span>)Se<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> crystals to be near the stochiometric rich with Se. The structure analysis by X-ray diffraction of as grown (In<span><math><msub><mrow></mrow><mrow><mi>x</mi></mrow></msub></math></span>Sn<span><math><msub><mrow></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub></math></span>)Se<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> crystal confirmed by hexagonal structure having lattice parameters: <span><math><mrow><mi>a</mi><mo>=</mo><mi>b</mi><mo>=</mo><mn>3</mn><mo>.</mo><mn>81</mn><mspace></mspace><mstyle><mi>Å</mi></mstyle><mo>,</mo></mrow></math></span> c = <span><math><mrow><mn>6</mn><mo>.</mo><mn>14</mn><mspace></mspace><mstyle><mi>Å</mi></mstyle></mrow></math></span>, and <span><math><mrow><mi>α</mi><mo>=</mo><mi>β</mi><mo>=</mo><mn>9</mn><msup><mrow><mn>0</mn></mrow><mrow><mo>∘</mo></mrow></msup></mrow></math></span>, <span><math><mrow><mi>γ</mi><mo>=</mo><mn>12</mn><msup><mrow><mn>0</mn></mrow><mrow><mo>∘</mo></mrow></msup></mrow></math></span> for x = 0. Optical parameters of layered crystals were characterized with optical absorption spectra within the wavelength range of 400 nm to 1100 nm. The thermal analysis of crystals have been performed by recording thermo gravimetric curve. The kinetic parameters, thermal activation energies evaluated by Broido method, Coast-Redfern method, Horowitz-Metzger method. The variat","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"649 ","pages":"Article 127913"},"PeriodicalIF":1.7,"publicationDate":"2024-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142535709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Laser-driven synthesis of functional materials for advanced energy applications: A short review","authors":"Eunseo Lee,&nbsp;Younghee So,&nbsp;Sungwook Mhin","doi":"10.1016/j.jcrysgro.2024.127925","DOIUrl":"10.1016/j.jcrysgro.2024.127925","url":null,"abstract":"<div><div>Since the initial exploration of synthesis possibilities at a liquid–solid interface through pulsed laser irradiation of iron in water, the pulsed laser ablation in liquid media (PLAL) process has garnered significant attention for constructing various nanostructures due to its simple, ultrafast, and clean methodology that avoids byproduct formation. Recent advances in functionalized heterostructures via the PLAL process suggest a broad range of applications for energy- conversion systems, including water splitting and energy harvesting. This review surveys recent advancements in PLAL for energy applications, with a specific focus on its applications in oxygen evolution reaction (OER) electrocatalysts and energy harvesting devices. The review discusses the synthesis mechanisms, advantages, challenges, and future research directions of PLAL, aiming to provide a comprehensive understanding of its potential and limitations.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"648 ","pages":"Article 127925"},"PeriodicalIF":1.7,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142419162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Intrinsic scintillation performance & europium concentration effects in RbSr2I5 and RbSr2Br5 scintillators","authors":"Kimberly S. Pestovich ,&nbsp;Luis Stand ,&nbsp;Nicholas Anastasi ,&nbsp;Megan A. Gillespie ,&nbsp;Lakshmi S. Pandian ,&nbsp;Charles L. Melcher ,&nbsp;Edgar van Loef ,&nbsp;Mariya Zhuravleva","doi":"10.1016/j.jcrysgro.2024.127924","DOIUrl":"10.1016/j.jcrysgro.2024.127924","url":null,"abstract":"<div><div>Scintillators play crucial roles in homeland security applications like gamma ray spectroscopy and high energy X-ray radiography. For promising new scintillators, fine-tuning the luminescent dopant concentration is one avenue to further improve their performance and tailor their properties. In this work, the effects of europium dopant concentrations on the crystal growth, luminescence and scintillation properties of RbSr₂Br₅ and RbSr₂I₅ crystals was investigated. Nine transparent 7 mm diameter single crystals were grown via the Vertical Bridgman method. The optical band gap of RbSr₂Br₅ was 5.9 eV and that of RbSr₂I₅ was 4.7 eV. High scintillation performance was achieved with a relatively low europium concentration of 1 mol%. For both RbSr₂Br₅:Eu and RbSr₂I₅:Eu crystals, light yield of 60–90,000 ph/MeV, energy resolution 2.8–4.0 % at 662 keV, and X-ray afterglow 0.79–1.5 % at 2 ms were obtained.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"649 ","pages":"Article 127924"},"PeriodicalIF":1.7,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142433756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Sn-doped n-type GaN freestanding layer: Thermodynamic study and fabrication by halide vapor phase epitaxy","authors":"Kazuki Ohnishi ,&nbsp;Kansuke Hamasaki ,&nbsp;Shugo Nitta ,&nbsp;Naoki Fujimoto ,&nbsp;Hirotaka Watanabe ,&nbsp;Yoshio Honda ,&nbsp;Hiroshi Amano","doi":"10.1016/j.jcrysgro.2024.127923","DOIUrl":"10.1016/j.jcrysgro.2024.127923","url":null,"abstract":"<div><div>Results of a thermodynamic study of Sn doping and fabrication of a Sn-doped GaN freestanding layer with high structural quality by halide vapor phase epitaxy (HVPE) are described in this paper. Thermodynamic analysis revealed that SnCl₂ and/or SnCl act as Sn precursors through the reaction between Sn metal and HCl gas. The equilibrium partial pressures of SnCl₂ and SnCl increase with the input HCl partial pressure. To generate Sn precursors effectively, it is desirable that the reaction between Sn metal and HCl gas occurs in the inert gas ambient. On the basis of results of the thermodynamic study, the Sn-doped GaN freestanding layer with a Sn concentration of 5.7 × 10¹⁹ cm⁻³ is fabricated by removing the GaN seed substrate after HVPE growth. The Sn-doped GaN freestanding layer has high crystal quality, and the lattice constants along the <em>c</em>- and <em>a</em>-axes of the Sn-doped GaN freestanding layer are larger than those of the GaN seed substrate because of the high electron density and the size effect of Sn atoms.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"648 ","pages":"Article 127923"},"PeriodicalIF":1.7,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142419159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Cr-doped tri-metallic nano prism catalyst for efficient alkaline and seawater splitting","authors":"Sembinova Aigul ,&nbsp;Enkhtuvshin Enkhbayar ,&nbsp;Ashish Gaur ,&nbsp;HyukSu Han","doi":"10.1016/j.jcrysgro.2024.127928","DOIUrl":"10.1016/j.jcrysgro.2024.127928","url":null,"abstract":"<div><div>Electrochemical water splitting is one of the most promising methods for sustainable production of green hydrogen. The oxygen evolution reaction (OER) is a crucial step in the process of water splitting. However, it exhibits sluggish kinetics and requires a significant overpotential for functioning at reasonable reaction<!--> <!-->rates. The efficiency of the reaction can be enhanced by reducing the overpotential, lowering the energy barrier, and using an effective electrocatalyst. Transition metal-based<!--> <!-->catalysts are well studied for this purpose. Specially, nickel–cobalt (Ni-Co) based catalysts have been regarded as the best OER electrocatalysts. Therefore, several studies have been carried out to enhance the electrocatalytic efficiency of Ni-Co catalysts. While mixing other transition metals with Ni-Co is a straightforward and reliable method to improve the OER activity of Ni-Co catalysts, there is still a need for a thorough examination of the design of Ni-Co catalysts with various additional elements. Seawater electrolysis, which utilizes abundant water resources that constitute over 97% of the world’s water, is highly appealing for sustainable energy production. To achieve commercial feasibility, scientists are striving to solve challenges, such as corrosion resistance, high<!--> <!-->overpotential, and the need for efficient and durable electrocatalysts.</div><div>In this study, we fabricated a transition metal-based trimetallic catalyst (CNF), consisting of cobalt (Co), nickel (Ni), and iron (Fe). Furthermore, CNF was doped with chromium (Cr-doped CNF) and tested for the OER in alkaline freshwater and alkaline seawater. Our Cr-doped trimetallic CNF catalyst demonstrates exceptional performance in both seawater and freshwater, with overpotential of 320 mV and 280 mV at 10 mA cm⁻² current density, making it a promising candidate for large-scale, sustainable hydrogen production.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"649 ","pages":"Article 127928"},"PeriodicalIF":1.7,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142433638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"SO3NH3 crystal growth in (CH3)3SBr solution","authors":"Bohui Xu ,&nbsp;Pifu Gong ,&nbsp;Zheshuai Lin","doi":"10.1016/j.jcrysgro.2024.127929","DOIUrl":"10.1016/j.jcrysgro.2024.127929","url":null,"abstract":"<div><div>SO₃NH₃ (Sulfamic acid, or SA) is known for its excellent piezoelectric and optical properties, making it valuable for various optical applications. However, it usually takes weeks to months to grow the SA single crystals with centimeter-scale size by traditional growth method from solution. In this study, we use (CH₃)₃SBr (Me₃SBr) as an additive to enhance the growth rate of SA single crystals, and the growth time was reduced to just 48 h. The mechanism of accelerated crystallization process is attributed to the variations of electrostatic potential and binding energy on SA crystal modified by the additive. In addition, structural analysis and basic characterization on the newly grown SA are performed, and first-principles calculations provide insights into the energy band structure and phonon spectrum.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"648 ","pages":"Article 127929"},"PeriodicalIF":1.7,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142419158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Preparation of SiC coatings on graphite substrates via CVD using polysilaethylene","authors":"Hiroki Sato ,&nbsp;Takashi Goto ,&nbsp;Atsushi Okuno ,&nbsp;Akira Yoshikawa","doi":"10.1016/j.jcrysgro.2024.127931","DOIUrl":"10.1016/j.jcrysgro.2024.127931","url":null,"abstract":"","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"649 ","pages":"Article 127931"},"PeriodicalIF":1.7,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142433755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimizing cooling strategies in the Czochralski process for large-diameter silicon ingots","authors":"Amir Reza Ansari Dezfoli","doi":"10.1016/j.jcrysgro.2024.127920","DOIUrl":"10.1016/j.jcrysgro.2024.127920","url":null,"abstract":"<div><div>As the semiconductor industry shifts towards larger wafer sizes, such as 300 mm and 450 mm, controlling defects is crucial to ensure device performance and yield. Conversely, a high cooling rate is essential for achieving higher production rates. Therefore, finding the optimal cooling strategy is critical to maintaining high production rates while ensuring high-quality wafer production. This paper employs a simulation model to investigate the impact of various cooling strategies on point defect formation during the CZ process for 450 mm diameter silicon ingots. Using the 3D energy equation coupled with the Navier-Stokes equation and moving mesh theory, the transient CZ process is simulated, incorporating defect evaluation equations. Beside original CZ puller configuration, two cooling strategies are examined: one with a small gap and long cooling jacket (Case II) and another with a large gap and short cooling jacket (Case III), compared against a baseline setup (Case I). The simulations reveal that Case II, while enhancing the crystallization rate, increases non-uniformity. Conversely, Case III produces a flatter solid-liquid interface and lower defect concentrations, achieving a maximum Cv-Ci of 0.4 × 10¹⁴ cm⁻³, compared to 1.1 × 10¹⁴ cm⁻³ and -2.5 × 10¹⁴ cm⁻³ in Case I and II. These findings suggest that adjusting cooling strategies can significantly impact the quality and uniformity of large- diameter silicon ingots.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"649 ","pages":"Article 127920"},"PeriodicalIF":1.7,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142434035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Review of simulation and modeling techniques for silicon Czochralski crystal growth","authors":"Amir Reza Ansari Dezfoli","doi":"10.1016/j.jcrysgro.2024.127921","DOIUrl":"10.1016/j.jcrysgro.2024.127921","url":null,"abstract":"","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"648 ","pages":"Article 127921"},"PeriodicalIF":1.7,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142419157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nonlinear optical cyanurate crystals","authors":"Xianghe Meng ,&nbsp;Haotian Tian ,&nbsp;Qian Wu ,&nbsp;Mingjun Xia","doi":"10.1016/j.jcrysgro.2024.127930","DOIUrl":"10.1016/j.jcrysgro.2024.127930","url":null,"abstract":"<div><div>The exploration of ultraviolet (UV) nonlinear optical (NLO) crystals is of great significance in various fields, such as optical communication, medical diagnosis, deep space exploration and optical digital signal processing. Accordingly, cyanurates attracted widespread attention due to their strong second-harmonic-generation (SHG) effects, large birefringence for phase-matching, short UV cutoffs, high solar blind transmittances and easy crystal preparations. This article reviews the optical properties of so far reported cyanurate NLO crystals, describes the preparation approaches of cyanurates, compares their structures to further analyze the source of their large SHG effect, and provides some insights for designing and synthesizing new UV cyanurates in the future.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"648 ","pages":"Article 127930"},"PeriodicalIF":1.7,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142419161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}