Journal of Crystal Growth最新文献_第8页

Polycrystalline Mo as the substrate for heteroepitaxy of GaN using sputtered AlN buffer layer 用溅射AlN缓冲层制备氮化镓的异质外延衬底

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-03-23 DOI: 10.1016/j.jcrysgro.2025.128156

Yang Li , Jia Chen , Kui Pan , Qinzhong Chen , Ke Zhang , Zhihe Lin , Kaixin Zhang , Hengshan Liu , Tailiang Guo , Qun Yan , Jie Sun

{"title":"Polycrystalline Mo as the substrate for heteroepitaxy of GaN using sputtered AlN buffer layer","authors":"Yang Li , Jia Chen , Kui Pan , Qinzhong Chen , Ke Zhang , Zhihe Lin , Kaixin Zhang , Hengshan Liu , Tailiang Guo , Qun Yan , Jie Sun","doi":"10.1016/j.jcrysgro.2025.128156","DOIUrl":"10.1016/j.jcrysgro.2025.128156","url":null,"abstract":"<div><div>GaN and related III-nitrides have attracted significant attention due to their excellent performance and extensive applications. However, the substrates for epitaxial growth of III-nitride films are limited to a few options, such as SiC, Si, and sapphire, which suffer from significant shortcomings including high cost, lattice mismatch, and thermal expansion coefficient mismatch. In this study, AlN film with c-axis orientation was deposited on a 2-inch polycrystalline Mo substrate using reactive magnetron sputtering, leveraging the advantages of Mo. Additionally, the influence of a two-dimensional graphene (Gr) insertion layer on the epitaxy of III-nitrides on Mo was investigated. The introduction of Gr slightly reduced the grain size of the AlN by about 10 nm. However, the Gr induced some in-plane tensile strain in the AlN film, which compensated the compressive strain in the subsequently grown GaN, resulting in a more undistorted GaN lattice with a c-axis strain of only 0.01 %. Continuous GaN films were successfully epitaxially grown on the sputtered AlN buffer layers, which are with c-axis preferred orientation and ultraviolet emission at ∼3.36 eV. The grain size of GaN increased by about 5 nm and the full width at half maximum of the photoluminescence spectra also decreased by about 2.5 nm after the insertion of Gr. Our investigation indicates that Mo or Gr/Mo substrates are promising candidates for the heteroepitaxial growth of GaN films using sputtered AlN buffer layers. This work also provides a valuable strategy for low-cost and high-quality heteroepitaxy of other III-nitrides.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"660 ","pages":"Article 128156"},"PeriodicalIF":1.7,"publicationDate":"2025-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143704981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Effects of synthesis methods on the structural and magnetic properties of Mg0.2Ni0.6Zn0.2Fe2O4 spinel ferrite 合成方法对Mg0.2Ni0.6Zn0.2Fe2O4尖晶石铁氧体结构和磁性能的影响

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-03-20 DOI: 10.1016/j.jcrysgro.2025.128157

Sarang R. Daf , Dilip S. Badwaik , Shrikant M. Suryawanshi , Bhupendra T. Kumbhare , Bhaurao R. Balbudhe , Rupesh S. Wandhare

{"title":"Effects of synthesis methods on the structural and magnetic properties of Mg0.2Ni0.6Zn0.2Fe2O4 spinel ferrite","authors":"Sarang R. Daf , Dilip S. Badwaik , Shrikant M. Suryawanshi , Bhupendra T. Kumbhare , Bhaurao R. Balbudhe , Rupesh S. Wandhare","doi":"10.1016/j.jcrysgro.2025.128157","DOIUrl":"10.1016/j.jcrysgro.2025.128157","url":null,"abstract":"<div><div>Spinel ferrite nanoparticles (SFNPs), such as Mg<sub>0.2</sub>Ni<sub>0.6</sub>Zn<sub>0.2</sub>Fe<sub>2</sub>O<sub>4</sub>, have unique properties that are influenced by their synthesis methods. Different bottom-up approaches, including sol–gel, auto-combustion, hydrothermal, and co-precipitation method were used to prepare these nanoparticles. Structural, morphological, optical and magnetic properties were analysed using techniques like X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), transmission electron microscope (TEM), scanning electron microscope (SEM) and vibrating sample magnetometer (VSM). Crystallite sizes measured using Scherrer’s formula were 28.9 nm, 20.2 nm, and 7.5 nm for the respective synthesis methods. FTIR spectra indicated metal–oxygen bond formation, TEM and SEM confirms cubical shaped morphology while VSM analysis revealed the pseudo-single domain nature of the synthesized SFNPs. The observed and estimated parameter strongly suggests that these materials could be used in biomedical and electronic applications.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"660 ","pages":"Article 128157"},"PeriodicalIF":1.7,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143715148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Investigation on the effect of refine adjusting substrate holder on the preparation of diamond 精细化调整衬底支架对金刚石制备影响的研究

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-03-18 DOI: 10.1016/j.jcrysgro.2025.128154

J. Weng , J. Liu , X.J. Chen , F. Liu , F.J. Cui , J.H. Wang , L.W. Xiong

引用次数: 0

Luminescence properties of Rb4Li2TiOGe4O12 single crystal grown by high-temperature solution growth 高温溶液生长Rb4Li2TiOGe4O12单晶的发光特性

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-03-18 DOI: 10.1016/j.jcrysgro.2025.128143

Tianyu Wang , Chuan Tang , Qian Wu , Wen Li , Zhen Jia , Yuntao Wu , Mingjun Xia

引用次数: 0

230 nm electron-beam excited light source with AlGaN/AlN multiple quantum wells on face-to-face annealed sputter-deposited AlN template 在面对面退火溅射沉积AlN模板上制备了具有AlGaN/AlN多量子阱的230 nm电子束激发光源

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-03-14 DOI: 10.1016/j.jcrysgro.2025.128142

Ryoya Iwase , Ryota Akaike , Hiroki Yasunaga , Takao Nakamura , Masayoshi Nagao , Katsuhisa Murakami , Hideto Miyake

{"title":"230 nm electron-beam excited light source with AlGaN/AlN multiple quantum wells on face-to-face annealed sputter-deposited AlN template","authors":"Ryoya Iwase , Ryota Akaike , Hiroki Yasunaga , Takao Nakamura , Masayoshi Nagao , Katsuhisa Murakami , Hideto Miyake","doi":"10.1016/j.jcrysgro.2025.128142","DOIUrl":"10.1016/j.jcrysgro.2025.128142","url":null,"abstract":"<div><div>We conducted a comprehensive investigation into the optimal architecture of light-emitting devices operating in the 230 nm wavelength band, which were fabricated face-to-face by annealing sputter-deposited AlN templates for electron-beam excitation. The structures and multiple quantum wells were systematically optimized. The present findings revealed that employing AlN as the underlayer and the barrier layers produced significant improvements in surface smoothness and enhanced cathodoluminescence intensity. Moreover, the optimized device was successfully integrated with a graphene-based electron source, facilitating light emission through electron-beam excitation and achieving a power efficiency of 0.16 %. Remarkably, this power efficiency remained stable with increasing injected current from the graphene-based electron source, demonstrating a linear increase in light output without the efficiency droop associated with conventional light-emitting diodes. These results validate the potential of a simplified device structure that eliminates the need for a p-type layer, aiding the development of large-area, high-output light sources within the 230 nm band.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"660 ","pages":"Article 128142"},"PeriodicalIF":1.7,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143679748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Crystals grown from precipitant-free ultralow concentrate ATP (adenosine triphosphate) solutions with extremely low DC potential 晶体从无沉淀的超低浓缩ATP（三磷酸腺苷）溶液中生长，具有极低的直流电位

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-03-14 DOI: 10.1016/j.jcrysgro.2025.128140

Abani K. Bhuyan

{"title":"Crystals grown from precipitant-free ultralow concentrate ATP (adenosine triphosphate) solutions with extremely low DC potential","authors":"Abani K. Bhuyan","doi":"10.1016/j.jcrysgro.2025.128140","DOIUrl":"10.1016/j.jcrysgro.2025.128140","url":null,"abstract":"<div><div>ATP crystals are grown under bare conditions of DC potential, ionic strength, and solute concentration without a precipitant. A 1.6 V cm<sup>−1</sup> DC field supplied internally to aqueous solutions containing as low as 0.003 mg mL<sup>−1</sup> ATP in 1 mM phosphate buffer appears sufficient for the growth of orthorhombic crystals. The effect of the electric field (EF) on molecular ionization and monomer → aggregate transition are analyzed by UV–visible and fluorescence spectroscopy. The aggregation process starts in less than an hour after turning the DC field on, and the aggregates appear to nucleate and enter the crystal phase in hours or days. Processes innate to electrochemistry are minimized or do not interfere with the interaction of the EF with the molecular dipole, forcing predominant aggregation in the solution itself. The crystals are imaged and indexed using electron microscopy and powder X-ray diffractogram. A series of experiments in which the amount crystallized as a function of initial concentration of ATP in the 0.003–13 mg mL<sup>−1</sup> range was determined yields an indicator isotherm of crystallization at 298 K that shows that the amount of ATP used up to produce the crystalline phase decreases rapidly with the initial concentration used.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"659 ","pages":"Article 128140"},"PeriodicalIF":1.7,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143684073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Study on the influence of 36-inch hot field heater structure on the oxygen content of Czochralski monocrystalline silicon 36寸热场加热器结构对单晶硅氧含量影响的研究

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-03-14 DOI: 10.1016/j.jcrysgro.2025.128144

Duan Xiaochen , Huang Xuguang , Wang Yulong , Chai Chen , Han Qinghui , Ma Haotian , Bai Guijie

{"title":"Study on the influence of 36-inch hot field heater structure on the oxygen content of Czochralski monocrystalline silicon","authors":"Duan Xiaochen , Huang Xuguang , Wang Yulong , Chai Chen , Han Qinghui , Ma Haotian , Bai Guijie","doi":"10.1016/j.jcrysgro.2025.128144","DOIUrl":"10.1016/j.jcrysgro.2025.128144","url":null,"abstract":"<div><div>CZ method utilizes a quartz crucible to grow solar-grade monocrystalline silicon. The primary component of the quartz crucible is SiO2, which contributes most of the oxygen and negatively impacts the efficiency of solar cells. CGSim numerical simulation software is employed to analyze the effects of heating power, interfacial stress, melt flow, and silicon-oxygen content at varying heights of the main heater. The results indicate that shortening the main heater can increase power, expand the low-temperature region of the melt, and weaken the melt convection along the sides of the crucible, thereby reducing the precipitated oxygen content (from 7.11 × 10^17 atoms/cm<sup>3</sup> to 5.85 × 10^17 atoms/cm<sup>3</sup>, a reduction of 17.7 %). After the addition of a second heater, the crystal oxygen content is further decreased by 8.7 %, with the minimum oxygen content reaching 5.34 × 10^17 atoms/cm<sup>3</sup>. According to production data, shortening the main heater and incorporating a second heater can lead to a 24.6 % reduction in oxygen content, demonstrating a significant decrease in oxygen levels.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"659 ","pages":"Article 128144"},"PeriodicalIF":1.7,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143644328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Iron-induced low background impurity and high resistivity GaN films grown by MOCVD on patterned sapphire substrates 在图案蓝宝石衬底上MOCVD生长铁致低背景杂质和高电阻率GaN薄膜

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-03-13 DOI: 10.1016/j.jcrysgro.2025.128141

Song Fu, Qun Ma, Yang Li, Junjie Kang, Meng Liang, Xiaoyan Yi, Junxi Wang, Jinmin Li, Zhiqiang Liu

{"title":"Iron-induced low background impurity and high resistivity GaN films grown by MOCVD on patterned sapphire substrates","authors":"Song Fu, Qun Ma, Yang Li, Junjie Kang, Meng Liang, Xiaoyan Yi, Junxi Wang, Jinmin Li, Zhiqiang Liu","doi":"10.1016/j.jcrysgro.2025.128141","DOIUrl":"10.1016/j.jcrysgro.2025.128141","url":null,"abstract":"<div><div>Electrically insulating GaN epilayers with good crystal quality are essential but challenging for power electronics. Iron (Fe) doping is a valuable method to achieve high resistivity GaN grown by metal–organic chemical vapor deposition (MOCVD). Here, we investigated the impacts of Fe dopants on growth kinetics and electron transition processes in GaN. It is found that the Fe dopants act as surfactants during growth, facilitating the coalescence of GaN and thus effectively limiting the incorporation of oxygen (O) impurities from the substrates into epilayers by 30 times. Meanwhile, the Fe dopants induce a (0/-) transition level, 0.59 eV below the conduction band minimum, which serves as electron traps capturing free electrons and resulting in high resistivity. The relevant mechanism was discussed in detail, and a quantitative model was established, with the consideration of free electron density, donor and Fe concentration, and temperature. Benefit from those, GaN films on patterned sapphire substrates (PSS) with a dislocation density of 1.3 × 10<sup>8</sup> cm<sup>−2</sup>, a resistivity up to 7.4 × 10<sup>9</sup> Ω∙cm, and free of intentional Fe doping at the surface of the epilayer can be achieved. The clarification of Fe dopants in GaN paves the way for future advanced electronic devices and applications.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"659 ","pages":"Article 128141"},"PeriodicalIF":1.7,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143645029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Growth and thermal expansion properties of KYbxY1-x(WO4)2 single crystals for laser applications 激光用KYbxY1-x(WO4)2单晶的生长和热膨胀性能

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-03-12 DOI: 10.1016/j.jcrysgro.2025.128139

S.A. Guretskii , D.V. Karpinsky , E.L. Trukhanova , K.V. Yumashev , E.E. Trusova , N.V. Kuleshov

引用次数: 0

Heating efficiency and energy saving potential of Czochralski crystal growth furnaces 克氏晶体生长炉的加热效率及节能潜力

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-03-07 DOI: 10.1016/j.jcrysgro.2025.128106

Sepehr Foroushani, Arved Wintzer, Frank-Michael Kiessling, Kaspars Dadzis

{"title":"Heating efficiency and energy saving potential of Czochralski crystal growth furnaces","authors":"Sepehr Foroushani, Arved Wintzer, Frank-Michael Kiessling, Kaspars Dadzis","doi":"10.1016/j.jcrysgro.2025.128106","DOIUrl":"10.1016/j.jcrysgro.2025.128106","url":null,"abstract":"<div><div>Environmental concerns and rising energy costs have increased attention to energy efficiency in growing semiconductor crystals from melt, traditionally a highly energy-intensive process. The energy conservation measures have so far generally been limited to the ventilation and air-conditioning of production facilities, with far less attention paid to the process equipment. In the present work, a thermodynamic limit is established as the baseline for evaluating the energy efficiency of industrial crystal growth processes. It is then shown that the typical industrial furnace has energy demands far above this strictly necessary limit. Measurements on a research-scale furnace with induction and resistance heating along with numerical simulation with validated models are used to identify the sources of energy loss in the furnace and possible ways of improving energy efficiency. Measurement results show that switching to induction heating can lead to energy savings of roughly 35%. Simulations demonstrate the utility of numerical modes in gaining a detailed understanding of the thermal performance of the furnace and identifying the improvement and optimization measures.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"662 ","pages":"Article 128106"},"PeriodicalIF":1.7,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143815279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0