Understanding of the surface morphology dynamics of Ni and Fe from scaling analysis: A kinetic Monte Carlo study

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2025-05-08 DOI:10.1016/j.jcrysgro.2025.128232

Sonia Blel

引用次数: 0

Abstract

The current paper examines the homo-epitaxial growth for two materials Ni and Fe via Kinetic Monte-Carlo (KMC) simulations based on the solid-on-solid model. We have investigated a qualitative and quantitative study for these materials. The stable surface is studied under various growth temperatures. We have extracted the critical exponents from the corresponding asymptotic behavior of the height-height correction function. Our results were compared to the available theoretical results and seem advantageous for a better understanding of the growth dynamics. We also discussed how the energy value of the next-nearest-neighbor (NNN) affects the scaling exponents and the roughness of the unstable surface morphology, due to the presence of an Ehrlich–Schwoebel (ES) barrier. We found that their effect becomes very clear in the case of Fe rather than Ni material.

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从结垢分析了解Ni和Fe的表面形态动力学：动力学蒙特卡罗研究

本文采用基于固对固模型的动力学蒙特卡罗（KMC）模拟方法研究了Ni和Fe两种材料的同外延生长。我们对这些材料进行了定性和定量研究。研究了不同生长温度下的稳定表面。我们从相应的高度-高度校正函数的渐近行为中提取了临界指数。我们的结果与现有的理论结果进行了比较，似乎有利于更好地理解生长动力学。我们还讨论了由于Ehrlich-Schwoebel势垒的存在，下近邻（NNN）的能量值如何影响标度指数和不稳定表面形貌的粗糙度。我们发现它们的作用在Fe而不是Ni材料的情况下变得非常明显。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.