Journal of Crystal Growth最新文献

{"title":"Investigation of MoS2 growth on GaN/sapphire substrate using molecular beam epitaxy","authors":"Mohamed Al Khalfioui,&nbsp;Minh Tuan Dau,&nbsp;Zineb Bouyid,&nbsp;Ileana Florea,&nbsp;Philippe Vennéguès,&nbsp;Julien Brault,&nbsp;Stéphane Vézian,&nbsp;Adrien Michon,&nbsp;Yvon Cordier,&nbsp;Philippe Boucaud","doi":"10.1016/j.jcrysgro.2024.128047","DOIUrl":"10.1016/j.jcrysgro.2024.128047","url":null,"abstract":"<div><div>The growth of two-dimensional molybdenum disulphide (MoS₂) layers on Gallium Nitride/Sapphire (GaN/Al₂O₃) substrates using molecular beam epitaxy (MBE) growth technique has been investigated. We show that optimized conditions at a substrate temperature around 700 °C lead to full surface coverage of MoS₂ on GaN. The growth proceeds through the initial formation of triangular-shaped MoS₂ flakes/domains on the GaN surface. Raman spectroscopy and high-resolution scanning transmission electron microscopy reveal the formation at the wafer-scale of a MoS₂ monolayer and few bilayers. A closer analysis of regions with two MoS₂ layers reveals the coexistence of both 1 T and 1H phases, showing strong bonds between the top layer of GaN and the first MoS₂ layer, and van der Waals interactions between the first and second MoS₂ layers.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"652 ","pages":"Article 128047"},"PeriodicalIF":1.7,"publicationDate":"2024-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143183757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interfacial characterization of non-metal precipitates at grain boundaries in cast multicrystalline silicon crystals","authors":"Xiang Lv ,&nbsp;Hangfei Li ,&nbsp;Degong Ding ,&nbsp;Xuegong Yu ,&nbsp;Chuanhong Jin ,&nbsp;Deren Yang","doi":"10.1016/j.jcrysgro.2024.128042","DOIUrl":"10.1016/j.jcrysgro.2024.128042","url":null,"abstract":"&lt;div&gt;&lt;div&gt;Silicon carbide (SiC) and silicon nitride (Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt;) are two major non-metal precipitates commonly found along grain boundaries (GBs) in cast multicrystalline silicon (mc-Si) crystals. SiC precipitates are known to cause significant leakage current, which can adversely affect the performance of solar cells. Although Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt; itself is electrically inactive, it serves as a heterogeneous nucleation site for SiC, therefore indirectly compromising solar cell efficiency. Despite the impact, the interface structure and formation mechanisms of these precipitates at grain boundaries remain poorly understood. This study employs high-resolution transmission electron microscopy (HRTEM) to investigate the atomic-scale interface structures of SiC and Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt; precipitates at GBs in mc-Si crystals. Results indicate that SiC primarily exists in the cubic phase (&lt;span&gt;&lt;math&gt;&lt;mi&gt;β&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-SiC), while Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt; is predominantly in hexagonal phase (&lt;span&gt;&lt;math&gt;&lt;mi&gt;α&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt;). Two distinct interface structures, and consequently different strain states, are observed between the precipitate (&lt;span&gt;&lt;math&gt;&lt;mi&gt;β&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-SiC, &lt;span&gt;&lt;math&gt;&lt;mi&gt;α&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt;) and the Si matrix. The first type is an abrupt interface with a crystallographic relationship of &lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mfenced&gt;&lt;mn&gt;100&lt;/mn&gt;&lt;/mfenced&gt;&lt;mrow&gt;&lt;mi&gt;β&lt;/mi&gt;&lt;mtext&gt;-SiC&lt;/mtext&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;mspace&gt;&lt;/mspace&gt;&lt;/math&gt;&lt;/span&gt;//&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mfenced&gt;&lt;mn&gt;100&lt;/mn&gt;&lt;/mfenced&gt;&lt;mtext&gt;Si&lt;/mtext&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; and a high strain band at the interface. In the second type, an intermediate phase is inserted between the &lt;span&gt;&lt;math&gt;&lt;mi&gt;β&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-SiC and Si interface, exhibiting a crystallographic relationship of &lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mfenced&gt;&lt;mn&gt;011&lt;/mn&gt;&lt;/mfenced&gt;&lt;mrow&gt;&lt;mi&gt;β&lt;/mi&gt;&lt;mtext&gt;-SiC&lt;/mtext&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;//&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mfenced&gt;&lt;mn&gt;111&lt;/mn&gt;&lt;/mfenced&gt;&lt;mtext&gt;Si&lt;/mtext&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; and a strain-free state. Similar intermediate areas are also identified in &lt;span&gt;&lt;math&gt;&lt;mi&gt;α&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt;/Si and &lt;span&gt;&lt;math&gt;&lt;mi&gt;α&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt;/&lt;span&gt;&lt;math&gt;&lt;mi&gt;β&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-SiC interfaces, with crystallographic relationship of &lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mfenced&gt;&lt;mn&gt;001&lt;/mn&gt;&lt;/mfenced&gt;&lt;mrow&gt;&lt;mi&gt;α&lt;/mi&gt;&lt;mo&gt;-&lt;/mo&gt;&lt;msub&gt;&lt;mi&gt;Si&lt;/mi&gt;&lt;mn&gt;3&lt;/mn&gt;&lt;/msub&gt;&lt;msub&gt;&lt;mi&gt;N&lt;/mi&gt;&lt;mn&gt;4&lt;/mn&gt;&lt;/msub&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;//&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mfenced&gt;&lt;mn&gt;221&lt;/mn&gt;&lt;/mfenced&gt;&lt;mtext&gt;Si&lt;/mtext&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; and &lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mfenced&gt;&lt;mn&gt;010&lt;/mn&gt;&lt;/mfenced&gt;&lt;mrow&gt;&lt;mi&gt;α&lt;/mi&gt;&lt;msub&gt;&lt;mtext&gt;-Si&lt;/mtext&gt;&lt;mtext&gt;3&lt;/mtext&gt;&lt;/msub&gt;&lt;msub&gt;&lt;mtext&gt;N&lt;/mtext&gt;&lt;mn&gt;4&lt;/mn&gt;&lt;/msub&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;//&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mfenced&gt;&lt;mn&gt;111&lt;/mn&gt;&lt;/mfenced&gt;&lt;mrow&gt;&lt;mi&gt;β&lt;/mi&gt;&lt;mtext&gt;-SiC&lt;/mtext&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;, respectively. These intermediates regions significantly reduce associated inte","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"652 ","pages":"Article 128042"},"PeriodicalIF":1.7,"publicationDate":"2024-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143182894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Corrigendum to “Preparation of SiC coatings on graphite substrates via CVD using polysilaethylene” [J. Cryst. Growth 649 (2025) 127931]","authors":"Hiroki Sato,&nbsp;Takashi Goto,&nbsp;Akira Yoshikawa","doi":"10.1016/j.jcrysgro.2024.128040","DOIUrl":"10.1016/j.jcrysgro.2024.128040","url":null,"abstract":"","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"652 ","pages":"Article 128040"},"PeriodicalIF":1.7,"publicationDate":"2024-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143183756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characterization of phosphorus deactivation in epitaxial Si:P and surpassing 1021 cm−3 carrier concentration","authors":"D. Abdula,&nbsp;Y. Chiu,&nbsp;C.K. Miskin,&nbsp;A.T. Demos","doi":"10.1016/j.jcrysgro.2024.128046","DOIUrl":"10.1016/j.jcrysgro.2024.128046","url":null,"abstract":"<div><div>Deactivation behavior of epitaxial phosphorus-doped silicon, Si:P, was analyzed using a combination of Hall effect measurement and high-resolution X-ray diffraction. Processing at two different temperatures provided the ability to determine when the deactivation mechanism transitions from thermally-driven to primarily dopant-density driven. For &lt; 500 °C growth temperature, a minimum resistivity of 0.258 ± 0.003 mΩ-cm was observed at (2.88 ± 0.02)% total P with active carrier concentration, <em>n</em>, of (7.18 ± 0.09) × 10²⁰ cm⁻³ equating to (50.1 ± 1.9)% active dopant. In contrast, maximum <em>n</em> = (7.76 ± 0.09) × 10²⁰ cm⁻³ was seen at (4.32 ± 0.02)% P. For &lt; 400 °C growth temperature, a minimum resistivity of 0.214 ± 0.002 mΩ-cm was measured at (2.97 ± 0.02)% P with <em>n</em> = (1.01 ± 0.01) × 10²¹ cm⁻³ which is (67.9 ± 1.7)% active dopant. Maximum <em>n</em> = (1.09 ± 0.02) × 10²¹ cm⁻³ was at (4.11 ± 0.02)% P, again different than resistivity minimum. Lower temperature processing pushed the active dopant amount for maximum <em>n</em> from (35.7 ± 1.6)% to (53.0 ± 1.9)%, at nearly identical %P, meaning deactivation is indeed inhibited. This benefit appears to dissipate at ∼ 5.5 % P, based on converging resistivity and active dopant dependences, indicating the onset of dopant-density driven deactivation. Growth at &lt; 400 °C also provided near-unity (96.0 ± 2.2)% active dopant [where <em>n</em> = (7.51 ± 0.07) × 10²⁰ cm⁻³] at (1.57 ± 0.02)% P giving 0.247 ± 0.003 mΩ-cm resistivity. Both ionized and non-ionized (inactive) dopants were shown to influence mobility, with the latter coming on at ∼ 50 % inactive dopant and causing a maximum decrease of ∼ 7 cm²/V-s with the %P range considered here. Threshold and maximum were both independent of growth temperature. These results have implications on Si:P optimization for contact versus for bulk resistivity as well as lowering both resistivities overall.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"652 ","pages":"Article 128046"},"PeriodicalIF":1.7,"publicationDate":"2024-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143183748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Broadband InGaAsP/InP NIR LEDs based on multiple photon-recycling photoluminescent layers","authors":"Zoltán Szabó,&nbsp;Barbara Beiler,&nbsp;Zsófia Baji","doi":"10.1016/j.jcrysgro.2024.128045","DOIUrl":"10.1016/j.jcrysgro.2024.128045","url":null,"abstract":"<div><div>Infrared spectroscopy is a very popular measurement technique presently, especially in healthcare, agriculture, and food industry. NIR LEDs have high efficiencies, but narrow wavelengths, therefore they are suitable for measurements at a certain wavelength. GaInAsP/InP is an ideal material system for the fabrication of double heterostructure LED devices with tuneable emission wavelengths. The present study addresses the need when a broader emission-peak is preferred for spectroscopic applications. An LED structure is covered by photoluminescent layers grown epitaxially by liquid phase epitaxy. The primary light of the active layer excites the further layers which emit photoluminescent radiation. The partly transmitted primary and the secondary lights together result in a broader spectrum. This work presents NIR LEDs with wide emission spectra which cover the entire NIR range based on multiple photon-recycling photoluminescent layers. This type of NIR light source could replace the incandescent light sources on account of their small dimensions, high efficiency, and low power consumption, which is critical in small, handheld NIR spectroscopy devices.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"652 ","pages":"Article 128045"},"PeriodicalIF":1.7,"publicationDate":"2024-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143182880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of chromium precursor on stoichiometries of Cr3S4 and Cr2S3 nanoparticles by chemical aggregation reactions","authors":"R. Leyva Ontiveros ,&nbsp;R. Ramírez-Bon ,&nbsp;H.A. Pineda-León ,&nbsp;M.C. Acosta-Enríquez ,&nbsp;A. Carrillo-Castillo ,&nbsp;A. de León ,&nbsp;S.J. Castillo","doi":"10.1016/j.jcrysgro.2024.128044","DOIUrl":"10.1016/j.jcrysgro.2024.128044","url":null,"abstract":"<div><div>We developed two formulations to synthesize chromium sulfide nanoparticles to analyze the effect of the chromium precursors to obtain different stoichiometries. Most works do not report samples with entangled stoichiometries. In this paper, we got a pure sample and an entangled one through slightly different formulations. There is very few information on the Raman and XPS data for chromium sulfide compounds. In this work, we support the available information through the lattice determination, indexing the diffraction patterns. The method,<!--> <em>chemical aggregation reactions</em>, that we utilized to prepare our material is straightforward. Besides, it is associated with short lengths of time, low costs, the number of instruments needed, precursors easy to manage and room temperature. Both formulations to elaborate the nanoparticles mentioned above differ just in the step related to the appropriate selection of the chromium source. The characterization techniques transmission electron microscopy (TEM), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS), UV–Vis spectroscopy, were implemented to identify our nanoparticles’ chemical composition and optical properties. The first formulation leaded to an entangled composite of monoclinic Cr₃S₄ and rhombohedral Cr₂S₃ (Cr₃S₄/Cr₂S₃). The second formulation yielded a pure stoichiometry corresponding to hexagonal Cr₂S₃. The direct band gaps were found using the Tauc theory; the results were 2.73 eV for Cr₃S₄/Cr₂S₃ and 2.67 eV for Cr₂S₃. In addition, optical responses of transmission, absorption, reflection, and refractive index are presented.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"652 ","pages":"Article 128044"},"PeriodicalIF":1.7,"publicationDate":"2024-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143182881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Facet growth kinetics and diameter fluctuations in molten zone Si crystal growth","authors":"Christian Kranert ,&nbsp;Paul Wimmer ,&nbsp;Jochen Friedrich ,&nbsp;Thierry Duffar","doi":"10.1016/j.jcrysgro.2024.128024","DOIUrl":"10.1016/j.jcrysgro.2024.128024","url":null,"abstract":"<div><div>Several &lt;111&gt; oriented silicon single crystals have been grown in ellipsoid mirror furnaces at various growth rates by the zone melting technique. The crystals grown with initial necking show no dislocation and large (111) facets perpendicular to the growth axis. Measurements of facet growth rate and undercooling allowed selecting the applicable kinetic coefficients in case of facets growing through 2D-seed nucleation mode. Crystals grown without necking exhibit dislocations and show smaller stable facets, allowing the determination of the kinetic coefficient in case of dislocation-driven facet growth. Among these crystals, those grown at lower velocity, with a lower temperature gradient, show a decrease of dislocation density with length of the crystal and an increase of facet diameter fluctuations. A geometric model of dislocation-facet interaction suggests that these diameter fluctuations are due to the effect of individual dislocations crossing the facet, which increase when the dislocation density decreases.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"652 ","pages":"Article 128024"},"PeriodicalIF":1.7,"publicationDate":"2024-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143182891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultra-thin epitaxial orthorhombic ferroelectric Hf0.97Y0.03O2 films on La2/3Sr1/3MnO3/SrTiO3 substrate with different orientations","authors":"Qiang Wang ,&nbsp;Haoyan Meng ,&nbsp;Yexuan Guo ,&nbsp;Yankun Wang ,&nbsp;Liyan Dai ,&nbsp;Jinyan Zhao ,&nbsp;Libo Zhao ,&nbsp;Zhuangde Jiang ,&nbsp;Jutta Schwarzkopf ,&nbsp;Shengli Wu ,&nbsp;Lifeng Liu ,&nbsp;Chuanmin Wang ,&nbsp;Zongmin Wang ,&nbsp;Fei Chu ,&nbsp;Yong Wang ,&nbsp;Wei Ren ,&nbsp;Gang Niu","doi":"10.1016/j.jcrysgro.2024.128043","DOIUrl":"10.1016/j.jcrysgro.2024.128043","url":null,"abstract":"<div><div>Ferroelectric hafnium-oxide (HfO₂) films have a great potential for integrated non-volatile memories, neuromorphic computation and micro-electro-mechanical systems (MEMS), thanks to its compatibility with mainstream semiconductor fabrication process. However, the high-quality ferroelectric single-crystal HfO₂ films, deemed as the consequence of the non-centrosymmetric orthorhombic o (111) phase, are still challenging to be reliably prepared. It is because various phase structures like monoclinic phase, tetragonal phase or cubic phase are possible to be formed accompanying with orthorhombic o (111) phase. The crystalline phase of HfO₂ is related to the doping, the lattice strain, the film thickness and the orientation of substrate, however the comprehensive understandings of different factors are still lacking. We report in this work the growth and optimization of o (1<!--> <!-->1<!--> <!-->1) phase Y-doped HfO₂ (HYO) films deposited on La_2/3Sr_1/3MnO₃/SrTiO₃ and comprehensively clarify the influence of the substrate orientation, the film thickness, and the oxygen pressure on crystal behaviors of HYO films. By comparing HYO/STO (0<!--> <!-->0<!--> <!-->1) with HYO/STO (0<!--> <!-->1<!--> <!-->1) systems, this work reports an insight into the orientation-dependent epitaxial relation, interplanar spacing, lattice constant and ferroelectric properties of o-HfO₂ (1<!--> <!-->1<!--> <!-->1) films. Eventually, an ultra-thin ∼5.5 nm epitaxial single-crystal o-HYO (1<!--> <!-->1<!--> <!-->1) film with a large ferroelectric polarization of ∼35.9 μC cm⁻² was obtained using LSMO/STO (0<!--> <!-->1<!--> <!-->1) substrate. These results are of great significance for the preparation and realization of high-quality epitaxial single-crystal ferroelectric o-HYO (1<!--> <!-->1<!--> <!-->1) ultra-thin films.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"652 ","pages":"Article 128043"},"PeriodicalIF":1.7,"publicationDate":"2024-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143182899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Manufacturing of Ag/Ag2O nanocomposites for anti-quorum sensing: A Safe and green approach","authors":"Hatice Aysun Mercimek Takcı ,&nbsp;Deniz Kadir Takcı ,&nbsp;Sedef Icigen ,&nbsp;Hasim Ozkan ,&nbsp;Sabri Erdi Duman ,&nbsp;Tahsin Huner","doi":"10.1016/j.jcrysgro.2024.128041","DOIUrl":"10.1016/j.jcrysgro.2024.128041","url":null,"abstract":"<div><div>Green synthesis of silver nanoparticles is the most phenomena topic that has affected all aspects of nanotechnology research, especially modern material sciences. The current study focuses on using endemic <em>Hypercium capitatum</em> in silver nanocomposite synthesis and investigating quorum quenching effects on <em>Choromobacter violaceum</em> and <em>Pseudomonas aeruginosa.</em> The strong absorption SPR peak appeared at about 432 nm. The optical bandgap of Ag/Ag₂O nanocomposites was predicted as about 1.95 eV by Tauc’s plot equation. The size distribution of Ag/Ag₂O nanocomposites with spherical shape ranged from 20.55 nm to 30.76 nm by SEM images. XRD findings confirmed the pure crystalline nature of biogenic Ag/Ag₂O nanocomposites with an average 30 nm size. FTIR spectrum indicated the presence of bioactive functional components responsible for the bioreduction of bulk AgNO₃ to Ag/Ag₂O nanocomposites<strong>.</strong> The Ag/Ag₂O nanocomposites effectively inhibited the pyocyanin and violacein-producing controlled by quorum sensing. This could be a promising achievement in a struggle with many persistent and dynamic pathogens.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"652 ","pages":"Article 128041"},"PeriodicalIF":1.7,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143182893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Formation and breakage of chain-like in preparation of nano-sized precipitated calcium carbonate","authors":"Zhiqin Huang ,&nbsp;Yuanzhen Huang ,&nbsp;Aimei Yang ,&nbsp;Xiuling Ma ,&nbsp;Yong Zhu ,&nbsp;Juying Zhou ,&nbsp;Lixian Sun ,&nbsp;Fen Xu ,&nbsp;Siyue Wei","doi":"10.1016/j.jcrysgro.2024.128010","DOIUrl":"10.1016/j.jcrysgro.2024.128010","url":null,"abstract":"<div><div>Nano-precipitated calcium carbonate (NPCC) exhibits multiple morphologies and unique properties to satisfy various requirements in industry. In this study, monodisperse and cubic NPCC were prepared by a solution mixing method using NaOH, Na₂CO₃, and CaCl₂ as raw materials. The morphology of CaCO₃ was controlled by the amount of NaOH in the precipitation process. X-ray diffraction (XRD), and scanning electron microscope (SEM) were employed for characterizations of CaCO₃. The formation and the subsequent fission of nanofibril-like CaCO₃ played an important role in the stages of NPCC preparation. The effects of pH, Ca²⁺, and Mg²⁺ concentration on the fission process were studied. The results indicate that the low pH, low Ca²⁺, and Mg²⁺ ions concentrations are beneficial to the fission of nanofibril-like CaCO₃, and the correlation mechanism is proposed.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"652 ","pages":"Article 128010"},"PeriodicalIF":1.7,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143182897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}