Journal of Crystal Growth最新文献_第7页

A new method for growing epitaxial films on foreign substrates − Bent epitaxy 在外来基底上生长外延薄膜的新方法 - Bent epitaxy

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2024-10-13 DOI: 10.1016/j.jcrysgro.2024.127911

D.V. Saparov

{"title":"A new method for growing epitaxial films on foreign substrates − Bent epitaxy","authors":"D.V. Saparov","doi":"10.1016/j.jcrysgro.2024.127911","DOIUrl":"10.1016/j.jcrysgro.2024.127911","url":null,"abstract":"<div><div>In recent years, to mitigate the effects of climate change, countries’ transition to the green economy has accelerated, and thereby, the demand of semiconductor industry for wide-gap semiconductors such as SiC and GaN has increased dramatically. These semiconductors are expensive. To reduce the price of the final product, industrial production of thin epitaxial films of sought-after semiconductors on accessible and cheap substrates, such as Si and sapphire, is being developed. When growing epitaxial films on foreign substrates, the resulting heterostructure bends, becomes concave or convex, due to a mismatch between the coefficients of thermal expansion (CTE) of the substrate and the epitaxial film. As a result, the quality of the epitaxial film deteriorates and further processing of the resulting heterostructures in production lines becomes difficult or even impossible. The essence of the proposed new method is that the epitaxial film is grown not on a flat, but on a pre-curved substrate with the expectation that after cooling the fabricated heterostructure to room temperature, the heterostructure will take a flat shape due to the difference in the CTE of the epitaxial film and the substrate. A round bimetallic plate, located under the substrate, bends the substrate in the required direction to the desired value at the growth temperature, and gradually reduces the bend of the fabricated heterostructure during cooling, in proportion to the thermal contraction of the epitaxial film. This allows obtaining qualitative and flat epitaxial films, regardless of the material of the substrate or epitaxial film and the diameter of the substrate or thickness of the epitaxial film, without any buffer layers or carrying out any additional operations and costs.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"649 ","pages":"Article 127911"},"PeriodicalIF":1.7,"publicationDate":"2024-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142442176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Elastic and vibrational properties of Formamidinium based mixed halide perovskites 甲脒基混合卤化物过氧化物的弹性和振动特性

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2024-10-12 DOI: 10.1016/j.jcrysgro.2024.127937

Furqanul Hassan Naqvi, Syed Bilal Junaid, Jae-Hyeon Ko

{"title":"Elastic and vibrational properties of Formamidinium based mixed halide perovskites","authors":"Furqanul Hassan Naqvi, Syed Bilal Junaid, Jae-Hyeon Ko","doi":"10.1016/j.jcrysgro.2024.127937","DOIUrl":"10.1016/j.jcrysgro.2024.127937","url":null,"abstract":"<div><div>Halide mixing effects on the elastic and vibrational properties were investigated for FAPbBr<sub>1.5</sub>Cl<sub>1.5</sub> single crystals. The elastic and vibrational characteristics of the synthesized single crystal were examined using temperature-dependent Brillouin and Raman spectroscopies. Elastic constants <em>C</em><sub>11</sub> and <em>C</em><sub>44</sub> were derived from the longitudinal and transverse sound velocities, respectively. The softening and subsequent hardening of the elastic constants upon cooling was accompanied by substantial increase of the acoustic damping peaks indicating significant interaction between the acoustic waves and reorientational dynamics of the FA cations. Especially, FAPbBr<sub>1.5</sub>Cl<sub>1.5</sub> exhibited extremely low shear rigidity compared to other MA-based perovskites. Raman spectroscopy was used to study the vibrational modes of the PbX<sub>6</sub> octahedral lattice and the internal motions of FA cations. Raman modes did not reveal any drastic changes within the investigated temperature range. The combined elastic and vibrational properties showed that the structural phase transitions observed from pure compounds were suppressed in FAPbBr<sub>1.5</sub>Cl<sub>1.5</sub> due to the local heterogeneous environment for the FA cations caused by random substitution of two halogen ions. These findings are expected to enhance the understanding of the material’s behavior under varying thermal conditions, which is crucial for optimizing the performance of perovskite-based devices.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"649 ","pages":"Article 127937"},"PeriodicalIF":1.7,"publicationDate":"2024-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142446628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Rapid prediction of interface morphology and oxygen transportation in crystal growth based on the response surface method 基于响应面法快速预测晶体生长过程中的界面形态和氧气运输

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2024-10-12 DOI: 10.1016/j.jcrysgro.2024.127935

Dongxiu Yan , Ziyi Guo , Xue Chen , Kai Li , Jianfu Zhao , Wenrui Hu

{"title":"Rapid prediction of interface morphology and oxygen transportation in crystal growth based on the response surface method","authors":"Dongxiu Yan , Ziyi Guo , Xue Chen , Kai Li , Jianfu Zhao , Wenrui Hu","doi":"10.1016/j.jcrysgro.2024.127935","DOIUrl":"10.1016/j.jcrysgro.2024.127935","url":null,"abstract":"<div><div>In this paper, a two-dimensional (2D) axisymmetric model subjected to the gas shear effect and thermal Marangoni effect is developed. It is highlighted that the growth conditions of pulling rate, gas flow rate, crucible, and crystal rotation rates play important roles in determining the crystal behaviors of interface morphology and oxygen transportation during the crystal growth process. A Kriging-based response surface method (RSM) is proposed to rapidly predict the crystal growth behaviors, indicating that the outputs of interface morphology and oxygen concentration can be predicted by the corresponding input growth conditions. By global sensitivity analysis, the pulling rate is identified as the key factor in determining the interface morphology, while gas flow rate and crucible rotation rate have a greater effect on oxygen transportation. Furthermore, these two inputs with the highest sensitivities are used to construct the response surface and predict unknown oxygen transportation. When compared with the numerical simulations, the presented model proves to be an effective tool for reducing measurement time and improving accuracy in predicting crystal behaviors. Our findings provide important insights into understanding the crystal growth process under different growth conditions and inspire a data-driven method for crystal growth prediction.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"649 ","pages":"Article 127935"},"PeriodicalIF":1.7,"publicationDate":"2024-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142535699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Recent advances of rare earth orthoferrite RFeO3 magneto-optical single crystals 稀土正长铁氧体 RFeO3 磁光单晶的最新进展

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2024-10-12 DOI: 10.1016/j.jcrysgro.2024.127939

Qixin Li , Jie Zhou , Jiamin Shang , Hui Shen , Leifan Li , Fei Wang , Xuanbing Shen , Tian Tian , A.M. Kalashnikova , Anhua Wu , Jiayue Xu

{"title":"Recent advances of rare earth orthoferrite RFeO3 magneto-optical single crystals","authors":"Qixin Li , Jie Zhou , Jiamin Shang , Hui Shen , Leifan Li , Fei Wang , Xuanbing Shen , Tian Tian , A.M. Kalashnikova , Anhua Wu , Jiayue Xu","doi":"10.1016/j.jcrysgro.2024.127939","DOIUrl":"10.1016/j.jcrysgro.2024.127939","url":null,"abstract":"<div><div>Currently, rare earth orthoferrites RFeO<sub>3</sub> crystals are gaining tremendous interests, thanks to their exotic magnetic, multiferroic and magneto-optical characteristics. This family displays distinctive advantages of ultrafast response in nanoseconds and much enhanced sensitivity for magneto-optical (MO) switches and isolators. Moreover, enriched magnetic transitions and ultrafast opto-magnetic modulation have been rationally achieved, favoring ultrafast magnetic recording with much lower energy consumption. This work comprehensively summarizes the recent advances of magneto-optical RFeO<sub>3</sub> single crystals, including the crystal growth, the regulation of magnetic properties and the tailoring of opto-magnetic interactions. The related mechanism for the modulation of magneto-optical interactions is also analyzed in details, facilitating deeper insight into the design and further exploration of RFeO<sub>3</sub> crystals for the potential applications in the fields of novel spintronic and ultrafast magneto-optical devices.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"649 ","pages":"Article 127939"},"PeriodicalIF":1.7,"publicationDate":"2024-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142535701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A novel feathery nanoporous magnesium synthesized by ethanol vapor assisted physical vapor deposition 乙醇蒸汽辅助物理气相沉积合成的新型羽毛状纳米多孔镁

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2024-10-11 DOI: 10.1016/j.jcrysgro.2024.127944

Han Wang , Xiping Song , Jingru Liu , Li You

引用次数: 0

Oxygen evolution reaction of tellurium-incorporated nickel-iron layered double hydroxide microcrystals 掺入碲的镍铁层状双氢氧化物微晶的氧进化反应

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2024-10-11 DOI: 10.1016/j.jcrysgro.2024.127918

Kyoungwon Cho , Hyun Cho , Jeong Ho Ryu

{"title":"Oxygen evolution reaction of tellurium-incorporated nickel-iron layered double hydroxide microcrystals","authors":"Kyoungwon Cho , Hyun Cho , Jeong Ho Ryu","doi":"10.1016/j.jcrysgro.2024.127918","DOIUrl":"10.1016/j.jcrysgro.2024.127918","url":null,"abstract":"<div><div>Transition-metal-based layered double hydroxide (LDH) crystals have generated substantial interest as highly efficient oxygen evolution reaction (OER) catalysts because of their abundance, low cost, environmental friendliness, and favourable adsorption/desorption energies for intermittent reactants. However, the application of LDH crystals as high-performance electrocatalysts is frequently hindered by their sluggish electronic transport kinetics resulting from their intrinsically low conductivity. Herein, we report the effects of incorporating metalloids into transition metal LDH crystals on their electrocatalytic activity. In this study, tellurium (Te) incorporated NiFe (<em>x</em>Te-NiFe) LDH microcrystal, where <em>x</em> = 0.2, 0.4, 0.6 and 0.8, were grown on three-dimensional porous nickel foam using a facile solvothermal method. The electrocatalytic OER properties were analyzed using linear sweep voltammetry and electrochemical impedance spectroscopy. The amount of Te was found to play a crucial role in improving the catalytic activity of NiFe LDH. The optimum amount of Te (<em>x</em>) introduced into NiFe LDH was examined with respect to the OER performance.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"649 ","pages":"Article 127918"},"PeriodicalIF":1.7,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142446627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Periodic dimple lines on the surface of the grain-boundary free (100) Si thin films grown by the continuous-wave laser crystallization 连续波激光结晶法生长的无晶界 (100) 硅薄膜表面的周期性凹痕线

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2024-10-11 DOI: 10.1016/j.jcrysgro.2024.127934

Satoshi Takayama , Nobuo Sasaki , Yukiharu Uraoka

引用次数: 0

Influence of bottom supporting columns and cooling rate on the surface shape characteristics of sapphire substrates 底部支撑柱和冷却速度对蓝宝石基底表面形状特征的影响

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2024-10-10 DOI: 10.1016/j.jcrysgro.2024.127933

Xiaobo Dai , Hao Li , Yang Zhang

{"title":"Influence of bottom supporting columns and cooling rate on the surface shape characteristics of sapphire substrates","authors":"Xiaobo Dai , Hao Li , Yang Zhang","doi":"10.1016/j.jcrysgro.2024.127933","DOIUrl":"10.1016/j.jcrysgro.2024.127933","url":null,"abstract":"<div><div>The manufacturing process of sapphire substrates involves several key steps, including epitaxy, annealing, cutting, and processing. Among these, epitaxy and annealing are particularly crucial. The temperature variances along both the longitudinal and transverse axes within the furnace during the crystallization process play a significant role in determining the crystallization rate and internal structure of sapphire crystals. Furthermore, annealing sapphire serves to alleviate internal stress, enhance crystal structure, optimize physical properties, improve optoelectronic characteristics, enhance surface quality, and increase overall yield. This step is paramount in enhancing the performance and application value of sapphire materials. In order to investigate and optimize the effects of different thermal conductivities of support columns at the base and various annealing procedures on the surface characteristics of sapphire substrates, thereby improving product quality, this study conducted research by utilizing support columns made of different materials and carefully controlling the cooling rate parameters for sapphire. The findings revealed that using graphite as the base support column for the crystal furnace can reduce both the longitudinal and transverse temperature gradients within the furnace, consequently promoting crystal growth and enhancing the quality of sapphire ingots. Additionally, sapphire chips annealed using the rapid one-step annealing program exhibited the highest average warpage and bending rate variation, reaching 2.0 μm, and the average dislocation density was half that of conventionally produced chips, at 108.89 pits/cm<sup>2</sup>.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"649 ","pages":"Article 127933"},"PeriodicalIF":1.7,"publicationDate":"2024-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142433639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study of the physical nature of Mn4Si7 crystals formed by the diffusion method using an X-ray diffraction 利用 X 射线衍射法研究通过扩散法形成的 Mn4Si7 晶体的物理性质

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2024-10-10 DOI: 10.1016/j.jcrysgro.2024.127932

B.D. Igamov , A.I. Kamardin , D.Kh. Nabiev , I.R. Bekpulatov , G.T. Imanova , T.S. Kamilov , A.S. Kasimov , N.E. Norbutaev

{"title":"Study of the physical nature of Mn4Si7 crystals formed by the diffusion method using an X-ray diffraction","authors":"B.D. Igamov , A.I. Kamardin , D.Kh. Nabiev , I.R. Bekpulatov , G.T. Imanova , T.S. Kamilov , A.S. Kasimov , N.E. Norbutaev","doi":"10.1016/j.jcrysgro.2024.127932","DOIUrl":"10.1016/j.jcrysgro.2024.127932","url":null,"abstract":"<div><div>Mn<sub>4</sub>Si<sub>7</sub> silicide crystals obtained by the diffusion method were studied using an X-ray diffractometer (XRD-6100) SHIMADZU. As a result of research, 14 peaks were identified in the Mn<sub>4</sub>Si<sub>7</sub> crystal, corresponding to the database (COD-1530134).The size of Mn<sub>4</sub>Si<sub>7</sub> silicide crystals (<em>D<sub>Diff</sub></em>) ranged from 6.2 × 10<sup>−10</sup> m to 9.1 × 10<sup>−8</sup> m, the lattice tension between crystal atoms (<em>ε<sub>Diff</sub></em>) from 0.31 to 3.71, the dislocation density on the surface (<em>δ<sub>Diff</sub></em>) varied in the range from 1 × 10<sup>11</sup> to 3.2 × 10<sup>14</sup>. It was found that the degree of crystallization of Mn<sub>4</sub>Si<sub>7</sub> was 9.3 %, and the degree of amorphism reached 90.7 %. It has been established that the degree of crystallization of Mn<sub>4</sub>Si<sub>7</sub> silicides is relatively low due to the fact that the Mn and Si atoms are non-stoichiometrically bonded to each other, and the degree of amorphism is high.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"649 ","pages":"Article 127932"},"PeriodicalIF":1.7,"publicationDate":"2024-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142434036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Stress analysis and dislocation cluster generation in silicon crystal with artificial grain boundaries 带有人工晶界的硅晶体中的应力分析和位错簇生成

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2024-10-10 DOI: 10.1016/j.jcrysgro.2024.127922

Haruki Tajika , Kentaro Kutsukake , Noritaka Usami

引用次数: 0