Xia Tang, Milena Petković, Gagan-Kumar Chappa, Lucas Vieira, Natasha Dropka
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引用次数: 0
Abstract
This study evaluates four machine learning (ML) “white-box” methods − Decision Trees, Linear Regression, Python Symbolic Regression (PySR), and Sure Independence Screening and Sparsity Operation (SISSO) − and five “gray-box” methods − Gradient Boosting, XGBoost, Support Vector Machines (SVM), Gaussian Processes, and Random Forests − for analyzing data from the Cz-sapphire crystal growth process. The objective is to develop a model that achieves a balance between high predictive accuracy and interpretability in this small-data domain.
Twelve input variables − including process parameters, sapphire optical properties, and furnace geometry parameters − were analyzed in relation to five output variables: heating power, interface deflection, temperature gradients averaged at the solid/liquid interface and symmetry axis, and v/G. Using 500 data tuples from CFD simulations, the results highlighted significant performance differences across the models. SVM demonstrated superior performance in predicting temperature gradients, XGBoost excelled in interface deflection predictions, and Gradient Boosting was most effective for v/G. SISSO, known for its high interpretability, performed best in predicting heating power, particularly in cases where nonlinear noise was less pronounced.
The best performing models for each output generated explicit equations that relate inputs to outputs, feature importance plots, and 3D plots illustrating relationships within the 17-dimensional space. These findings offer theoretical insights for optimizing the Cz-sapphire crystal growth process and design.
期刊介绍:
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.