Large scale epitaxy of AlGaN/GaN heterojunction films on h-BN/4H-SiC templates

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2025-04-17 DOI:10.1016/j.jcrysgro.2025.128195

Daqing Peng , Chuanhao Li , Qiankun Yang , Kechao Wang , Liangbing Ge , Dongguo Zhang , Weike Luo , Zhonghui Li

引用次数: 0

Abstract

In this study, large scale and high-quality AlGaN/GaN heterojunction films epitaxial grown on two-dimensional h-BN grown through metal–organic chemical vapor deposition were prepared on 6-inch 4H-SiC substrates. The crystal quality of GaN films were improved by adopting H₂/NH₃ etching at high temperature on h-BN surface before AlN nucleation layer deposition. Furthermore, GaN film grown on h-BN/4H-SiC template under 1200 ℃ pretreatment exhibited lower internal stress, which is one third of that grown on SiC substrate directly. Both h-BN grown on 6-inch 4H-SiC substrate and the subsequent epitaxial AlGaN/GaN heterojunction films have excellent uniformity.

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在h-BN/4H-SiC模板上大规模外延AlGaN/GaN异质结薄膜

在本研究中，在6英寸的4H-SiC衬底上制备了通过金属有机化学气相沉积在二维h-BN上生长的大规模高质量的AlGaN/GaN异质结薄膜。在氮化铝成核层沉积前，采用H2/NH3在h-BN表面进行高温刻蚀，改善了氮化镓薄膜的晶体质量。此外，在1200℃预处理条件下，在h-BN/4H-SiC模板上生长的GaN薄膜具有较低的内应力，是在SiC衬底上直接生长的三分之一。在6英寸4H-SiC衬底上生长的h-BN和随后的外延AlGaN/GaN异质结薄膜都具有优异的均匀性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.