Yue Li , Zhijun Wang , Xianghan Gao , Junjie Li , Jincheng Wang , Ke-gang Wang
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引用次数: 0
Abstract
The precipitation kinetics of particles in solid-state has long been a topic of scientific and industrial interest due to their significant impact on the mechanical properties of Ni-based superalloys. Although numerous studies over the past decades have sought to understand the coarsening mechanism of precipitates, there remains a long-standing debate regarding the dominant mass transport mechanism-whether it is interface-controlled or matrix diffusion-controlled. A key challenge is that analytical theories of coarsening are only valid in the long-time regime, which is difficult to achieve experimentally. To address this, we have developed a modified Kampmann–Wagner numerical (KWN) model that incorporates both mass transport mechanisms. Using this precipitation model, we revisited experimental data from various Ni-Al model alloys at 823K and 1073K to clarify the dominant mass transport mechanisms from nucleation to coarsening. Our study demonstrates that a single mass transport mechanism cannot adequately reproduce the entire set of precipitation data. Specifically, the matrix diffusion mechanism aligns more closely with the early nucleation and growth stages but fails to account for the anomalous effect of increasing volume fraction on the coarsening rate. Conversely, while the interface-controlled mechanism fits the coarsening data better, it does not accurately represent the early nucleation and growth stages. These comparative results highlight the existence of a mixed-mode character throughout the entire precipitation process of particles, which is numerically captured by our modified KWN model.
期刊介绍:
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.