InAs/InAsSb type-II superlattice mid-wavelength infrared photodetectors with high antimony component absorber quantum efficiency enhancement

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2025-05-11 DOI:10.1016/j.jcrysgro.2025.128228

Junkai Jiang , Kai Liu , Lang Zhou , Yuan Zhao , Ruidong Li , Tuo Li , Donghai Wu , Guowei Wang , Dongwei Jiang , Hongyue Hao , Yingqiang Xu , Zhichuan Niu

引用次数: 0

Abstract

At cryogenic temperatures of 77 K, InAs/InAsSb superlattice-based infrared p-i-n photodetectors on GaSb substrates have exhibited remarkable performance. The devices exhibit 50 % and 100 % cut-off wavelengths of ∼ 4.7 μm and ∼ 5.2 μm at 77 K, respectively. At 0 mV bias voltage, the device demonstrates a peak responsivity of 1.21 A/W, with a quantum efficiency of 42 %. Under 77 K conditions, the dark current density values were found to be 1.46 × 10⁻⁴ A/cm² (0 mV bias) and 8.63 × 10⁻⁴ A/cm² (−200 mV bias). Additionally, the device exhibited a specific detectivity (D*) of 8.18 × 10¹⁰ cm·Hz¹/²/W at 3.5 μm peak responsivity under zero bias.

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具有高锑吸收量子效率增强的InAs/InAsSb型超晶格中波长红外探测器

在77 K的低温下，GaSb衬底上的InAs/InAsSb超晶格红外p-i-n光电探测器表现出了优异的性能。该器件在77 K下分别表现出50%和100%的截止波长为~ 4.7 μm和~ 5.2 μm。在0 mV偏置电压下，器件的峰值响应度为1.21 a /W，量子效率为42%。在77 K条件下，暗电流密度分别为1.46 × 10−4 A/cm2 （0 mV偏置）和8.63 × 10−4 A/cm2（−200 mV偏置）。此外，该器件在零偏压下的3.5 μm峰值响应度下具有8.18 × 101⁰cm·Hz1/2/W的特定探测率（D*）。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.