One-dimensional bismuth chalcogenide-filled single-walled carbon nanotubes: Formation of solid solution and homologous nanostructures

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2025-02-04 DOI:10.1016/j.jcrysgro.2025.128088

Marianna V. Kharlamova , Kiran Bal , Katarina Hutchin , Liam Jones , Reza J. Kasthiban , Jeremy Sloan

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引用次数: 0

Abstract

Metal chalcogenides have been interesting for researchers from the middle of the 20th century. In the 21st century, topological insulators based on metal chalcogenides are a developing and promising field. All such studies have mostly been dedicated to the atomic structure, optical, and electronic properties of these materials. In the present work, SWCNTs were filled with the the topological insulators bismuth selenide, and bismuth telluride. The microstructure of filled SWCNTs were investigated with high-resolution transmission electron microscopy (HRTEM) and annular dark field scanning transmission electron microscopy (ADF STEM). The electronic properties of the composite filled SWCNTs were studied with Raman spectroscopy, which show only a small modification to the electronic structure of nanotubes due to small band gap of the encapsulated chalcogenides. These results are promising for the applications of metal chalcogenide-filled SWCNTs in nanoelectronics, thermoelectric power generation devices, and biomedicine.

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.