Molecular beam epitaxy of flexible InN thin films on fluorophlogopite mica

IF 2 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2025-10-14 DOI:10.1016/j.jcrysgro.2025.128355

Yingzhao Geng , Yang Xu , Xu Li , Xiao Wang , Hao Wu , Chang Liu

引用次数: 0

Abstract

InN thin films have been deposited on fluorophlogopite mica (F-mica) substrates by molecular beam epitaxy (MBE) under various growth conditions. The N₂ flow rate and radio-frequency (RF) power were adjusted to realize N-rich and In-rich growth conditions. During the transition from N-rich to In-rich conditions, the plateaus formed by partially coalesced larger grains or islands were observed, which was attributed to the short diffusion length of indium (In) atoms. Meanwhile, the In-rich InN thin films exhibit lower dislocation densities than those of N-rich thin films. Under In-rich conditions, similar plateaus were also observed at lower growth temperatures. Additionally, the surface roughness and total dislocation density were reduced by increasing the growth and In source temperatures to 490 and 775 °C. Throughout all growth condition, the in-plane epitaxial relationship remains as InN [110]//F-mica [010].

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氟云母上柔性InN薄膜的分子束外延

在不同的生长条件下，采用分子束外延（MBE）技术在氟云母（F-mica）衬底上制备了InN薄膜。通过调节氮气流量和射频（RF）功率来实现富n和富in的生长条件。在从富n向富In过渡的过程中，观察到由部分合并的较大颗粒或岛屿形成的高原，这是由于铟原子的扩散长度较短。同时，富n- n薄膜的位错密度低于富n薄膜。在富in条件下，在较低的生长温度下也观察到类似的高原。此外，将生长温度和In源温度分别提高到490℃和775℃，表面粗糙度和总位错密度都有所降低。在所有生长条件下，面内外延关系保持为InN [110]//F-mica[010]。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.