Journal of Crystal Growth最新文献_第2页

Enhanced separation of d-mannitol polymorphs I and II via nucleation control in swift cooling crystallization 通过快速冷却结晶的成核控制，增强了d-甘露醇多晶I和II的分离

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2025-10-02 DOI: 10.1016/j.jcrysgro.2025.128353

Lavanisadevi Subiramaniyam, Srinivasan Karuppannan

{"title":"Enhanced separation of d-mannitol polymorphs I and II via nucleation control in swift cooling crystallization","authors":"Lavanisadevi Subiramaniyam, Srinivasan Karuppannan","doi":"10.1016/j.jcrysgro.2025.128353","DOIUrl":"10.1016/j.jcrysgro.2025.128353","url":null,"abstract":"<div><div>The nucleation behaviour of <span>d</span>-mannitol polymorph which is influenced by supersaturation was scrutinized by swift cooling crystallization process in pure aqueous solution. During swift cooling, concentration of <span>d</span>-mannitol in the solution creates different level of relative supersaturation leads to substantial differences in induction time, nucleation and morphology of the resultant polymorphs. This technique is employed to generate wide range of relative supersaturation (0.159 < σ < 3.860) corresponds to the rapid decrease in the temperature from 55 °C to shifting temperature of 54–1 °C. Specifically, lower level of relative supersaturation promotes the stable form I polymorph, while the nucleation of form I and form II polymorph is flavoured in intermediate level. Conversely, higher level of relative supersaturation induces the formation of only metastable form II polymorph. In-situ optical microscopy was employed to analysis the morphology of the nucleated polymorphs. Further characterization was done to validate the internal structure and thermal stability of the grown polymorphs through powder X-ray diffraction (PXRD) and differential scanning calorimetry (DSC) analyses. Rietveld refinement was employed to confirm the structures of both polymorphs, supporting a reliable interpretation of the PXRD results. This work shows a key advantage in understanding the crystallization behaviour which can be employed for the nucleation of <span>d</span>-mannitol polymorphs without any external additives within the solution.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"671 ","pages":"Article 128353"},"PeriodicalIF":2.0,"publicationDate":"2025-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145236159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Growth of rutile GeO2 nanoneedles supported by in situ microscopy 原位显微镜支持下金红石型GeO2纳米针的生长

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2025-10-01 DOI: 10.1016/j.jcrysgro.2025.128351

Alexey S.T. Rybakov, Vu Anton Lie, Louis Mirecki, Jörg August Becker

{"title":"Growth of rutile GeO2 nanoneedles supported by in situ microscopy","authors":"Alexey S.T. Rybakov, Vu Anton Lie, Louis Mirecki, Jörg August Becker","doi":"10.1016/j.jcrysgro.2025.128351","DOIUrl":"10.1016/j.jcrysgro.2025.128351","url":null,"abstract":"<div><div>Rutile GeO<sub>2</sub> nanoneedles were grown using a method involving eutectics of the Ge-GeO<sub>2</sub> system and chemical transport reactions. The synthesis was carried out at 1095–1215 K in a miniature cell, which is evacuated and sealed, enclosing all products that are generated in reactions. In this cell, one can observe the processes throughout all stages of the method in situ via video microscopy. Differences in the process development depending on the heating time and mass ratio of reagents were revealed. Depending on the latter condition, two ways for growing nanoneedles have been proposed. The needles and other reaction products were studied ex situ using SEM, dark-field and bright-field TEM, HRTEM, SAED, EDX and Raman spectroscopy. The nanoneedles are single crystals without any amorphous surface layer. They are rutile GeO<sub>2</sub> and belong to the tetragonal crystal system. Their longitudinal growth direction is <span><math><mrow><mfenced><mrow><mn>001</mn></mrow></mfenced></mrow></math></span>. The spacings between lattice planes in the longitudinal and lateral directions are found to be 2.8 Å and 3.2 Å respectively. At higher temperatures, larger micrometre-sized crystals of rutile GeO<sub>2</sub> with various morphologies are formed.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"671 ","pages":"Article 128351"},"PeriodicalIF":2.0,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145236183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of flow–substrate angle on the growth quality of AlN films in a horizontal MNVPE reactor 流动-衬底角对水平MNVPE反应器中AlN膜生长质量的影响

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2025-09-29 DOI: 10.1016/j.jcrysgro.2025.128352

Yifan Li , Tengyu Zhang , Hui Zhang , Nan Gao , Xinjian Xie , Lifeng Bian , Yulong Fang , Guifeng Chen

{"title":"Effect of flow–substrate angle on the growth quality of AlN films in a horizontal MNVPE reactor","authors":"Yifan Li , Tengyu Zhang , Hui Zhang , Nan Gao , Xinjian Xie , Lifeng Bian , Yulong Fang , Guifeng Chen","doi":"10.1016/j.jcrysgro.2025.128352","DOIUrl":"10.1016/j.jcrysgro.2025.128352","url":null,"abstract":"<div><div>The growth of high-quality AlN films by Metal Nitride Vapor Phase Epitaxy (MNVPE) is often limited by non-uniform reactant distribution and unstable flow fields near the substrate surface. In this work, we find that different angle between the gas flow and the substrate surface can effectively influence both the crystalline quality and surface morphology of thick AlN films grown on sapphire. Computational fluid dynamics (CFD) simulations confirmed that the small-angle conicaler substrate holder improves the premixing uniformity of Al vapor and N<sub>2</sub>, while stabilizing the gas flow above the substrate. Experimental results show that, compared to the large-angle case, the full width at half maximum (FWHM) of the (0002) and (101 ̅2) X-ray rocking curves was significantly reduced from 849 to 458 arcsec and from 935 to 565 arcsec, respectively. The surface roughness (RMS) reached 2.65 nm, and the growth rate increased from 5 to 15 μm/h. Growth evolution analysis revealed a c-axis-oriented island coalescence mechanism. These results demonstrate that adjusting the flow–substrate angle is a simple yet effective approach to significantly enhance the MNVPE growth of AlN films.Key words: MNVPE AlN Single crystal growth.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"670 ","pages":"Article 128352"},"PeriodicalIF":2.0,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145217146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Identification of polymorphs in epitaxial SnO2 thin films deposited on sapphire (0001) substrates 蓝宝石（0001）衬底外延SnO2薄膜中多晶的鉴定

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2025-09-27 DOI: 10.1016/j.jcrysgro.2025.128349

Sukjune Choi , Chel-Jong Choi , Do Young Noh , Hyon Chol Kang

{"title":"Identification of polymorphs in epitaxial SnO2 thin films deposited on sapphire (0001) substrates","authors":"Sukjune Choi , Chel-Jong Choi , Do Young Noh , Hyon Chol Kang","doi":"10.1016/j.jcrysgro.2025.128349","DOIUrl":"10.1016/j.jcrysgro.2025.128349","url":null,"abstract":"<div><div>In this study, synchrotron X-ray diffraction (XRD) and transmission electron microscopy (TEM) methods were combined to identify polymorphs in SnO<sub>2</sub> thin films deposited on sapphire (0001) substrates using radio-frequency powder sputtering. A wide range of off-specular Bragg peaks—including higher-order reflections—were examined via high-resolution, in-plane XRD analyses for precise phase identification. Evidently, the orthorhombic columbite (C-SnO<sub>2</sub>) and tetragonal rutile (R-SnO<sub>2</sub>) phases coexisted in the as-deposited films. Because both the phases were aligned with their (200) planes along the surface normal, their out-of-plane Q<sub>z</sub> components appeared nearly identical. However, the in-plane Q<sub>x</sub> and Q<sub>y</sub> components were distinguishable. The lattice constants were estimated from the in-plane Bragg peak positions, and the corresponding strain states in ultrathin films (<10 nm) were determined. In the early stage of growth, the C-SnO<sub>2</sub> and R-SnO<sub>2</sub> domains exhibited opposing strains—compressive and tensile strains, respectively—because of extended domain matching epitaxy, which accommodated lattice mismatch and governed the stabilization of each polymorph. The coexistence of the two phases at the atomic scale was further supported by cross-sectional high-resolution TEM analysis. These findings provide new insights into the strain-driven stabilization of polymorphs and the structural evolution of epitaxial SnO<sub>2</sub> thin films on symmetry-mismatched substrates.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"670 ","pages":"Article 128349"},"PeriodicalIF":2.0,"publicationDate":"2025-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145217079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Point-seed-oriented and partial shape-restricted growth of KDP crystals: Numerical simulation and experimental study KDP晶体的点晶取向和部分形限生长：数值模拟和实验研究

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2025-09-23 DOI: 10.1016/j.jcrysgro.2025.128347

Jiezhao Lv , Peng Sun , Dexiao Fang , Changfeng Fang , Xian Zhao

{"title":"Point-seed-oriented and partial shape-restricted growth of KDP crystals: Numerical simulation and experimental study","authors":"Jiezhao Lv , Peng Sun , Dexiao Fang , Changfeng Fang , Xian Zhao","doi":"10.1016/j.jcrysgro.2025.128347","DOIUrl":"10.1016/j.jcrysgro.2025.128347","url":null,"abstract":"<div><div>Numerical simulations are performed to understand the mass transfer in point-seed-oriented and partial shape-restricted growth of potassium dihydrogen phosphate (KDP) crystals. A type-II cut point-seed is positioned in between two parallel and rotating platforms separated by a fixed distance. Numerical simulations show that the periodic rotational motion of the two adjacent parallel platforms can lead to significant differences in surface supersaturation across the same prismatic face. The non-steady and non-laminate flow result in defects such as growth avoids and inclusions that seriously affect the optical properties of the crystal. In some cases, it results in the failure of the growth (i.e., significant cracks). Lack of surface supersaturation homogeneity results in significant difference in step-motion rates and in the step-slope, which further cause step bending and even the formation of macroscopic steps. Inclusions and avoids are often filled with solution trapped in gaps between macroscopic steps. We have found both experimentally and numerically that increasing the separation between the two parallel platforms to above 30 mm can significantly mitigate the supersaturation gradient on the crystal surface and drastically reduce the number of inclusion defects.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"670 ","pages":"Article 128347"},"PeriodicalIF":2.0,"publicationDate":"2025-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145155664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Deep learning with slow feature analysis for silicon single crystal growth state identification in Czochralski process 基于慢特征分析的深度学习在单晶生长状态识别中的应用

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2025-09-21 DOI: 10.1016/j.jcrysgro.2025.128346

Jun-Chao Ren, Ding Liu, Zi-Xing Huang, Yin Wan

{"title":"Deep learning with slow feature analysis for silicon single crystal growth state identification in Czochralski process","authors":"Jun-Chao Ren, Ding Liu, Zi-Xing Huang, Yin Wan","doi":"10.1016/j.jcrysgro.2025.128346","DOIUrl":"10.1016/j.jcrysgro.2025.128346","url":null,"abstract":"<div><div>The preparation of semiconductor silicon single crystal for advanced chip process requirements is the top priority of the current integrated circuit industry development. In this process, real-time and accurate identification of the growth state of Czochralski silicon single crystals (Cz-SSC) is the key to ensuring stable and improved crystal quality. Due to the switching of operating conditions, environmental disturbances and high dependence on operator experience, the process dynamics are highly complex, and minor anomalies are often masked by normal operating conditions, posing a serious challenge to real-time crystal growth state identification. To solve this problem, this study proposes a Cz-SSC growth state identification method that integrates slow feature analysis (SFA) and deep learning. Firstly, SFA extracts slow features reflecting the nature of process evolution at the time scale to reduce the masking effect of anomalies on minor anomalies from the source; subsequently, a multi-scale one-dimensional convolutional neural network (MS-1DCNN) is designed and a cross-attention mechanism is introduced for features extracted from convolutional kernels of various scales to achieve the weighted fusion of cross-scalar information, thus comprehensively capturing the discriminative patterns at different time scales. Finally, the experimental results demonstrate that the proposed method achieves superior performance in crystal growth state recognition, outperforming other approaches in terms of overall accuracy, recall, and F1-score. This Cz-SSC growth state identification method provides an effective solution for fine control of the semiconductor SSC manufacturing process.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"670 ","pages":"Article 128346"},"PeriodicalIF":2.0,"publicationDate":"2025-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145155665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimization of process parameters to control diameter fluctuation during the monocrystalline silicon growth by hybrid neural network model and genetic algorithm 利用混合神经网络模型和遗传算法优化单晶硅生长过程中控制直径波动的工艺参数

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2025-09-20 DOI: 10.1016/j.jcrysgro.2025.128345

Jun Xiao , Qitao Zhang , Tai Li , Peilin He , Yuwei Wang , Kaifeng Liao , Guoqiang Lv , Xingwei Yang , Wenhui Ma

{"title":"Optimization of process parameters to control diameter fluctuation during the monocrystalline silicon growth by hybrid neural network model and genetic algorithm","authors":"Jun Xiao , Qitao Zhang , Tai Li , Peilin He , Yuwei Wang , Kaifeng Liao , Guoqiang Lv , Xingwei Yang , Wenhui Ma","doi":"10.1016/j.jcrysgro.2025.128345","DOIUrl":"10.1016/j.jcrysgro.2025.128345","url":null,"abstract":"<div><div>This study aims to construct a neural network-genetic algorithm collaborative optimization framework through a data-driven approach to break the challenge of diameter fluctuation control under multi-parameter coupling. Based on real-time data from the isothermal stage of industrial single crystal furnaces, the Grey Wolf Optimization algorithm is used to dynamically optimize the weights and hyperparameters of the Multi-Layer Perceptron. Consequently, a high-precision surrogate model of the relationship between process parameters (heater power, crystal pulling speed, crucible lift speed) and diameter fluctuation is established. Meanwhile, the thermal field stability is optimized by the Genetic Algorithm (i.e., a global search of the optimal parameter combination). Verified by factory measurements, the model prediction error is less than 5 %, and the optimal solutions for heater power, crystal pulling and crucible lift speed are 53.64 kW, 1.308 mm/min, and 0.163 mm/min, respectively. Actual production shows that the average diameter fluctuation of the crystal rods in the optimization group decreased from 1.48 ± 0.23 mm (original process) to 0.60 ± 0.15 mm (mean ± standard deviation), a reduction of 59.4 %. The coupled method significantly enhances the intelligence level of the single crystal silicon growth process, and provides a generalizable optimization paradigm for the preparation of other semiconductor crystals.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"670 ","pages":"Article 128345"},"PeriodicalIF":2.0,"publicationDate":"2025-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145155666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Structural, resistivity and magnetic properties of millimeter-sized HfAl3 single crystals grown from Al flux Al助焊剂生长的毫米级HfAl3单晶的结构、电阻率和磁性能

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2025-09-19 DOI: 10.1016/j.jcrysgro.2025.128344

Kexin Bi , Wansong He , Lewei Chen , Yunqing Shi , Junkun Yi , Jihai Yuan , Qingsong Liu , Haoyu He , Yadong Gu , Shaoliang Wang , Xiao Ren , Mingwei Ma , Genfu Chen , Zhian Ren

引用次数: 0

Thermal stabilization of porous silicon: A key step for high-quality SiGe epitaxy 多孔硅的热稳定：高质量SiGe外延的关键步骤

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2025-09-12 DOI: 10.1016/j.jcrysgro.2025.128342

Mohammed Ibrahim , Mansour Aouassa , Saud A. Algarni , A.K. Aladim , Maha A. Alenizi , K.M.A. Saron , Mohammed Bouabdellaoui , Isabelle Berbezier

{"title":"Thermal stabilization of porous silicon: A key step for high-quality SiGe epitaxy","authors":"Mohammed Ibrahim , Mansour Aouassa , Saud A. Algarni , A.K. Aladim , Maha A. Alenizi , K.M.A. Saron , Mohammed Bouabdellaoui , Isabelle Berbezier","doi":"10.1016/j.jcrysgro.2025.128342","DOIUrl":"10.1016/j.jcrysgro.2025.128342","url":null,"abstract":"<div><div>This study focuses on the epitaxial growth of virtual silicon–germanium (SiGe) substrates on porous silicon (PSi). Epitaxy was performed on different types of PSi substrates, with or without prior thermal annealing. Morphological and structural investigations by atomic force microscopy (AFM), transmission electron microscopy (TEM) and X-ray diffraction (XRD) show that epitaxial SiGe films grown on double-layer PSi substrates, annealed at 1100 °C, exhibit significantly higher crystalline quality than those grown on unannealed PSi substrates or PSi substrates annealed at temperatures lower than or equal to 900 °C. This improvement is attributed to the beneficial effects of 1100 °C annealing, which leads to stress relaxation, internal microstructure stabilization and significant improvement of PSi surface morphology. In contrast, direct growth of SiGe on unannealed PSi, even at moderate temperature (∼400 °C), induces structural degradation of the porous buffer, leading to a very high dislocation density in the epitaxially grown SiGe films. A well-optimized thermal treatment of PSi substrates promotes the growth of high-quality virtual SiGe substrates on PSi that is both efficient and economically viable for the development of SiGe-based photovoltaic cells and microelectronic devices.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"670 ","pages":"Article 128342"},"PeriodicalIF":2.0,"publicationDate":"2025-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145097004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Phase tunable synthesis of Cu2–xS nanocrystals and their cation substitution reactions Cu2-xS纳米晶的相位可调合成及其阳离子取代反应

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2025-09-10 DOI: 10.1016/j.jcrysgro.2025.128341

Jian Guo , Linchao Tan , Yedong Shi , Shaobo He , Xinxin Zhang , Lihui Chen

{"title":"Phase tunable synthesis of Cu2–xS nanocrystals and their cation substitution reactions","authors":"Jian Guo , Linchao Tan , Yedong Shi , Shaobo He , Xinxin Zhang , Lihui Chen","doi":"10.1016/j.jcrysgro.2025.128341","DOIUrl":"10.1016/j.jcrysgro.2025.128341","url":null,"abstract":"<div><div>Cation substitution (CS) reactions utilization of Cu<sub>2–</sub><em><sub>x</sub></em>S nanocrystals (NCs) have been emerged as a powerful postsynthetic method to produce complicated nanostructures and metastable phases. For these CS reactions, it is of great importance to tune the crystal phase of the Cu<sub>2–</sub><em><sub>x</sub></em>S NCs since it strongly affects the reaction kinetics, thermodynamics, reaction intermediates, and final products. Herein, hexagonal phase djurleite Cu<sub>1.94</sub>S NCs and cubic phase digenite Cu<sub>1.8</sub>S NCs were synthesized by simple tuning of the amount of thiourea (TU). In particular, 0.5 mmol of TU is responsible for the formation of the djurleite Cu<sub>1.94</sub>S NCs, while 5.0 mmol of TU is responsible for the formation of the digenite Cu<sub>1.8</sub>S NCs. Afterward, the Cu<sub>1.94</sub>S and digenite Cu<sub>1.8</sub>S NCs were substituted by Zn<sup>2+</sup> and Cd<sup>2+</sup>, and hexagonal phase wurtzite ZnS and CdS NCs, cubic phase zincblende ZnS and CdS NCs were produced. These ZnS and CdS NCs are otherwise difficult to access without the CS method. Therefore, our findings in the present study provide a straightforward phase tuning of the Cu<sub>2–</sub><em><sub>x</sub></em>S NCs, and potential guidelines for creating more complicated metal sulfide nano(hetero)structures.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"670 ","pages":"Article 128341"},"PeriodicalIF":2.0,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145044824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0