Journal of Crystal Growth最新文献_第2页

Photoluminescence-based dopant imaging of Ga-, P- and Sb-doped Czochralski-grown silicon wafers for solar cells 太阳能电池用掺Ga、P和sb硅晶圆的光致发光掺杂成像

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2026-04-01 Epub Date: 2026-01-23 DOI: 10.1016/j.jcrysgro.2026.128504

Afsaneh Kashizadeh , Rabin Basnet , Khoa Nguyen , Stephane Armand , Christian Samundsett , Wei Han , Yichun Wang , AnYao Liu , Daniel Macdonald

{"title":"Photoluminescence-based dopant imaging of Ga-, P- and Sb-doped Czochralski-grown silicon wafers for solar cells","authors":"Afsaneh Kashizadeh , Rabin Basnet , Khoa Nguyen , Stephane Armand , Christian Samundsett , Wei Han , Yichun Wang , AnYao Liu , Daniel Macdonald","doi":"10.1016/j.jcrysgro.2026.128504","DOIUrl":"10.1016/j.jcrysgro.2026.128504","url":null,"abstract":"<div><div>Recharged Czochralski (RCz) silicon is now the dominant substrate for industrial photovoltaics, yet research on radial dopant uniformity remains limited. In this study, we apply high-resolution steady-state photoluminescence (PL) imaging of the doping concentration, calibrated using eddy-current resistivity measurements, to characterize radial and axial dopant distributions in RCz-grown silicon wafers doped with antimony (Sb), phosphorus (P), and gallium (Ga). Despite their markedly different segregation coefficients, all three dopants exhibit highly uniform radial concentration profiles, with only weak (<10%) reductions in dopant concentration toward the wafer edges. These trends are consistent with the suppression of radial concentration gradients by crystal-crucible counter-rotation in the RCz process. Localized variations observed in the central ∼30 mm region are attributed to dopant redistribution driven by buoyancy- and Marangoni-driven melt convection. Axially along the length of the ingot, the wafers exhibit dopant distributions that are consistent with the combined effects of dopant segregation and evaporation: Sb-doped wafers show minimal doping variation along the ingot, whereas P- and Ga-doped wafers exhibit increasing doping concentrations toward the ingot tail. Calibrated PL measurements also reveal changes in apparent doping concentration arising from oxygen-related thermal donor (TD) formation and annihilation in Sb-doped samples after thermal treatments. These results demonstrate that RCz growth yields wafers with excellent radial dopant uniformity for the n- and p-type dopants studied here.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"680 ","pages":"Article 128504"},"PeriodicalIF":2.0,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146076448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Growth-temperature-dependent oxygen vacancy engineering and optical properties of Ga2S3-Ga2O3 composite films via thermal oxidation 热氧化制备Ga2S3-Ga2O3复合薄膜的生长温度依赖性氧空位工程和光学性能

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2026-04-01 Epub Date: 2026-02-03 DOI: 10.1016/j.jcrysgro.2026.128518

Jiao Hou, Yunfei Deng, Chuangming Liang, Jinpeng Luo, Weijia Yang

{"title":"Growth-temperature-dependent oxygen vacancy engineering and optical properties of Ga2S3-Ga2O3 composite films via thermal oxidation","authors":"Jiao Hou, Yunfei Deng, Chuangming Liang, Jinpeng Luo, Weijia Yang","doi":"10.1016/j.jcrysgro.2026.128518","DOIUrl":"10.1016/j.jcrysgro.2026.128518","url":null,"abstract":"<div><div>Ga<sub>2</sub>S<sub>3</sub>-Ga<sub>2</sub>O<sub>3</sub> composite thin films were successfully produced by thermally oxidizing Ga<sub>2</sub>S<sub>3</sub> precursors deposited via magnetron sputtering. The impact of Ga<sub>2</sub>S<sub>3</sub> deposition temperatures ranging from 25 to 450 °C on the structural, chemical, and optical properties of the resulting composites was thoroughly examined. Analysis confirmed the presence of both β-Ga<sub>2</sub>O<sub>3</sub> and Ga<sub>2</sub>S<sub>3</sub> phases in the films. Films deposited at 300 °C displayed optimal features, such as a smooth surface, improved crystallinity, and strong absorption in the solar-blind ultraviolet range (∼273 nm). X-ray photoelectron spectroscopy investigations indicated that the composite structure and growth temperature play a significant role in adjusting oxygen vacancy levels, crucial for device efficiency. This study showcases an effective method for producing high-quality Ga<sub>2</sub>S<sub>3</sub>-Ga<sub>2</sub>O<sub>3</sub> heterojunction films with promising applications in ultraviolet photodetection and gas sensing.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"680 ","pages":"Article 128518"},"PeriodicalIF":2.0,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146171285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Characterization of GaN layers grown on polycrystalline AlN substrates by hydride vapor phase epitaxy 氢化物气相外延法在多晶AlN衬底上生长GaN层的表征

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2026-04-01 Epub Date: 2026-01-31 DOI: 10.1016/j.jcrysgro.2026.128515

Anna Honda , Eun-Min Kwon , Kyoung-Hwa Kim , Jae-Hak Lee , Yoshio Honda , Takeshi Kato , Jun-Seok Park , Hyung-Soo Ahn

{"title":"Characterization of GaN layers grown on polycrystalline AlN substrates by hydride vapor phase epitaxy","authors":"Anna Honda , Eun-Min Kwon , Kyoung-Hwa Kim , Jae-Hak Lee , Yoshio Honda , Takeshi Kato , Jun-Seok Park , Hyung-Soo Ahn","doi":"10.1016/j.jcrysgro.2026.128515","DOIUrl":"10.1016/j.jcrysgro.2026.128515","url":null,"abstract":"<div><div>Gallium nitride (GaN) layers were grown on low-cost polycrystalline aluminum nitride (pc-AlN) substrates by hydride vapor phase epitaxy (HVPE) using a sputtered AlN buffer layer. Cross-sectional scanning electron microscopy (SEM) revealed relatively uniform GaN growth without interfacial voids or delamination, while transmission electron microscopy (TEM) demonstrated recrystallization behavior in the sputtered AlN buffer layer and the formation of a laterally coalesced GaN/AlN interface. Energy-dispersive X-ray spectroscopy (EDS) confirmed Ga- and N-rich composition in the GaN region with minimal Al interdiffusion, indicating a chemically sharp GaN/AlN interface. Atomic force microscopy (AFM) showed a root-mean-square (RMS) surface roughness of 0.39 µm, consistent with the grain structure of the underlying polycrystalline substrate. X-ray diffraction (XRD) confirmed the wurtzite GaN structure with distinct (002) and (102) reflections, reflecting the polycrystalline nature of the GaN layer. Cathodoluminescence (CL) mapping showed localized emission variations associated with grain boundaries, along with near-band-edge (NBE) and deep-level luminescence features. These results demonstrate the feasibility of continuous HVPE growth of GaN on pc-AlN substrates using a sputtered AlN buffer layer, suggesting a pathway for further optimization of GaN growth on cost-effective non-single-crystal AlN platforms.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"680 ","pages":"Article 128515"},"PeriodicalIF":2.0,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146171287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fabrication of N-polar AlN films on 4H-SiC substrates via polarity inversion technique 极性反转技术在4H-SiC衬底上制备n极性AlN薄膜

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2026-04-01 Epub Date: 2026-01-22 DOI: 10.1016/j.jcrysgro.2026.128503

Yuning Wang , Tomohiro Tamano , Tomoya Higashi , Ryota Akaike , Hiroki Yasunaga , Hideto Miyake

{"title":"Fabrication of N-polar AlN films on 4H-SiC substrates via polarity inversion technique","authors":"Yuning Wang , Tomohiro Tamano , Tomoya Higashi , Ryota Akaike , Hiroki Yasunaga , Hideto Miyake","doi":"10.1016/j.jcrysgro.2026.128503","DOIUrl":"10.1016/j.jcrysgro.2026.128503","url":null,"abstract":"<div><div>N-polar aluminum nitride (AlN) is an ultra-wide bandgap semiconductor with significant potential not only in optical devices but also in high-power, high-frequency, and high-temperature electronic applications. However, the epitaxial growth of device-grade N-polar AlN films has been hindered by challenges in controlling surface kinetics and polarity. In this study, we demonstrate the fabrication of high-quality N-polar AlN films on Si-face 4H-SiC substrates by combining sputter deposition with face-to-face annealing (FFA Sp), and employing a controlled polarity inversion technique. The resulting N-polar AlN films were crack-free and exhibited atomically smooth surfaces, with a root-mean-square (RMS) roughness of approximately 0.15 nm. The full width at half maximum (FWHM) values of the X-ray rocking curves for the (0002) and (10–12) diffraction peaks were measured to be 89 arcsec and 238 arcsec, respectively, corresponding to threading dislocation density (TDD) of approximately 6.5 × 10<sup>8</sup> cm<sup>−2</sup>. Cross-sectional TEM analysis confirmed similarly low TDD (∼1.5 × 10<sup>8</sup> cm<sup>−2</sup>). These results demonstrate an effective and scalable route for achieving high-quality N-polar AlN films on 4H-SiC substrates.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"680 ","pages":"Article 128503"},"PeriodicalIF":2.0,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146037031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effects of iron incorporation on the properties of tin sulfide thin films: a multi-technique investigation 铁掺入对硫化锡薄膜性能的影响：多技术研究

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2026-04-01 Epub Date: 2026-01-31 DOI: 10.1016/j.jcrysgro.2026.128513

J. Vijaya Raja Sekaran , K. Vijayakumar , S. Dinesh , C. Vignesh , G. Anburaj , M. Surendra Varma , M. Jerome Rozario , L. Guganathan , C. Rajeevgandhi , K. Vinoth

{"title":"Effects of iron incorporation on the properties of tin sulfide thin films: a multi-technique investigation","authors":"J. Vijaya Raja Sekaran , K. Vijayakumar , S. Dinesh , C. Vignesh , G. Anburaj , M. Surendra Varma , M. Jerome Rozario , L. Guganathan , C. Rajeevgandhi , K. Vinoth","doi":"10.1016/j.jcrysgro.2026.128513","DOIUrl":"10.1016/j.jcrysgro.2026.128513","url":null,"abstract":"<div><div>This study presents a systematic investigation into the effects of iron (Fe) incorporation (pure, 15, 25, 35, and 45 at%) on the structural, morphological, and optical properties of tin sulfide (SnS) thin films. A multi-technique approach employing X-ray diffraction (XRD), scanning electron microscopy with energy-dispersive X-ray spectroscopy (SEM-EDX), transmission electron microscopy (TEM), and photoluminescence (PL) spectroscopy was used for characterization. XRD analysis confirmed the orthorhombic phase of SnS in undoped films and revealed a lattice contraction at lower Fe concentrations (≤25 at%) due to successful substitutional doping. At higher concentrations (≥35 at%), the formation of secondary phases, identified as FeS<sub>2</sub> and Sn<sub>2</sub>S<sub>3</sub>, was observed, leading to degraded crystallinity. SEM and TEM analyses corroborated these findings, showing a transition from a dense, homogeneous morphology to a rough, agglomerated surface with distinct secondary phase nanoparticles at 45 at% Fe. EDX mapping confirmed homogeneous element distribution at lower doping levels and Fe clustering at higher levels. PL spectroscopy demonstrated a blue shift in the emission peak at intermediate doping levels (25 at%), attributed to the Burstein-Moss effect from increased charge carriers. However, severe PL quenching and the emergence of deep-level emissions occurred at higher Fe concentrations (35 and 45 at%), indicating the introduction of non-radiative recombination centers. The results conclusively identify an optimal Fe incorporation threshold near 25 at%, beyond which the beneficial properties of SnS are significantly compromised by phase segregation and defect generation. This work provides critical insights for tailoring Fe-doped SnS properties for optoelectronic applications.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"680 ","pages":"Article 128513"},"PeriodicalIF":2.0,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146171216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study of crystalline N-Polar Aluminum Nitride growth on both on-axis and off-axis Si (111) using plasma assisted molecular beam epitaxy 利用等离子体辅助分子束外延在Si（111）上生长n极性氮化铝晶体的研究

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2026-04-01 Epub Date: 2026-02-05 DOI: 10.1016/j.jcrysgro.2026.128519

Tahmid Sami Rahman , Sunil Choudhary , Brian Chang-Chien , Seungjun Kim , Elaheh Ahmadi

{"title":"Study of crystalline N-Polar Aluminum Nitride growth on both on-axis and off-axis Si (111) using plasma assisted molecular beam epitaxy","authors":"Tahmid Sami Rahman , Sunil Choudhary , Brian Chang-Chien , Seungjun Kim , Elaheh Ahmadi","doi":"10.1016/j.jcrysgro.2026.128519","DOIUrl":"10.1016/j.jcrysgro.2026.128519","url":null,"abstract":"<div><div>This study reports the successful growth of high-quality N-polar Aluminum Nitride (AlN) on off-axis Si(111) substrates using plasma-assisted molecular beam epitaxy (PAMBE), along with a comparative analysis of AlN films grown on both on-axis and off-axis Si(111). Motivated by the growing interest in off-axis Si(111) substrates for subsequent regrowth by metal–organic chemical vapor deposition (MOCVD), we focus on AlN growth on Si(111) with a 4°miscut. Through systematic optimization of growth conditions, including surface preparation and Al pre-deposition, we achieved a 100% yield of N-polar AlN across all attempts with off-axis Si(111). High crystalline quality of the AlN growth on miscut Si (111) substrate is confirmed by full width at half maximum (FWHM) values of the (002) X-ray rocking curve. N-polarity was verified for both on-axis and off-axis samples through in situ Reflection High-Energy Electron Diffraction (RHEED) and post-growth potassium hydroxide (KOH) etching. High-angle annular dark-field (HAADF) and annular bright-field (ABF) scanning transmission electron microscopy (STEM) imaging further confirm N-polarity based on the relative atomic positions along the growth direction. These results highlight the advantages of miscut Si(111) substrates for improving epitaxial AlN quality and establish a foundation for future N-polar III-nitride device development on silicon platforms.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"680 ","pages":"Article 128519"},"PeriodicalIF":2.0,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146171292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Indirect carbonation of titanium gypsum using an aspartic acid-ammonia system for the synthesis of pure vaterite 用天冬氨酸-氨水体系间接碳酸化钛石膏制备纯水晶石

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2026-04-01 Epub Date: 2026-02-01 DOI: 10.1016/j.jcrysgro.2026.128506

Yuan Gong , Yujie Qu , Hongxia Wei , Chunlei Li , Lanying Wang , Kangtai Shi , Kehao Qin

{"title":"Indirect carbonation of titanium gypsum using an aspartic acid-ammonia system for the synthesis of pure vaterite","authors":"Yuan Gong , Yujie Qu , Hongxia Wei , Chunlei Li , Lanying Wang , Kangtai Shi , Kehao Qin","doi":"10.1016/j.jcrysgro.2026.128506","DOIUrl":"10.1016/j.jcrysgro.2026.128506","url":null,"abstract":"<div><div>The controllable regulation of CaCO<sub>3</sub> polymorphs represents a fundamental challenge in indirect carbonation technology. This study developed an aspartic acid (Asp)–ammonia mediated indirect carbonation system for titanium gypsum (TG) to synthesize high-purity vaterite. The selective calcium leaching behavior facilitated by Asp and the formation mechanism of pure vaterite were elucidated through systematic investigation of the leaching and carbonation processes. The results demonstrate that via complexation, Asp achieves a calcium leaching efficiency of 78.30 ± 1.22% from TG, with complete dissolution of the CaSO<sub>4</sub>·2H<sub>2</sub>O phase under optimal conditions. In situ conductivity monitoring during carbonation revealed a two-stage polymorph transformation mechanism: an initial calcite-dominant growth stage driven by free Ca<sup>2+</sup>, followed by a vaterite formation stage sustained by complexed calcium. The adsorption of Asp<sup>−</sup> onto pre-formed calcite surfaces was identified as the critical factor inducing its transformation to vaterite and ensuring vaterite stability. The final product consisted of vaterite-type CaCO<sub>3</sub> with 97.31% purity and a phase content exceeding 99%, demonstrating the effectiveness of this approach for sustainable waste valorization and CO<sub>2</sub> sequestration.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"680 ","pages":"Article 128506"},"PeriodicalIF":2.0,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146171291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Formation mechanism and process investigation of nitrogen-vacancy centers in diamond fabricated by microwave plasma chemical vapor deposition 微波等离子体化学气相沉积金刚石中氮空位中心形成机理及工艺研究

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2026-04-01 Epub Date: 2026-02-05 DOI: 10.1016/j.jcrysgro.2026.128520

Tengfei Lu , Qijun Wang , Tian Shao , Jiajun Xu , Diwei Zou , Wei Shen , Gai Wu

{"title":"Formation mechanism and process investigation of nitrogen-vacancy centers in diamond fabricated by microwave plasma chemical vapor deposition","authors":"Tengfei Lu , Qijun Wang , Tian Shao , Jiajun Xu , Diwei Zou , Wei Shen , Gai Wu","doi":"10.1016/j.jcrysgro.2026.128520","DOIUrl":"10.1016/j.jcrysgro.2026.128520","url":null,"abstract":"<div><div>Nitrogen-vacancy (NV) center is regarded as one of the most significant point defects in diamond crystals and has emerged as a highly promising candidate for quantum technologies. In this study, the stable diamond NV centers of good coherent properties have been successfully fabricated without relying on a pure <sup>12</sup>C source or post-treatment processes, such as electron irradiation or high-temperature annealing. Instead, the nitrogen/hydrogen (N<sub>2</sub>/H<sub>2</sub>) gas ratio has been optimized during the microwave plasma chemical vapor deposition (MPCVD) process. Additionally, the relationship between the nitrogen concentration in the process gas and the coherence times of the NV center, as well as the synergistic effect of boron-nitrogen co-doping on NV center formation have been systematically examined. As a result, it can be indicated that during the fabrication of diamond NV centers via the MPCVD process, the nitrogen doping flow rate has a significant non-monotonic effect on the coherence times (T<sub>2</sub> and T<sub>2</sub>*). The maximum coherence times for T<sub>2</sub> (6.83 μs) and T<sub>2</sub>* (288.1 ns) are achieved at the nitrogen flow rate of 0.05 sccm. Both coherence times then fluctuate in a similar trend in the range of 2.25–4.79 μs for T<sub>2</sub> and 57.2–193.6 ns for T<sub>2</sub>* as the flow rate increases up to 5.00 sccm. Furthermore, both experimental and computational results demonstrate that B-N co-doping probably suppresses the formation of NV centers, as boron may act as an inhibitor in the process. Thus, this study could provide critical experimental insights into the controlled synthesis of NV centers and advances the understanding of defect engineering in diamond-based quantum materials.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"680 ","pages":"Article 128520"},"PeriodicalIF":2.0,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146171286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Evaluation of high quality 4-inch VGF-InAs substrates for infrared applications 用于红外应用的高质量4英寸VGF-InAs基板的评估

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2026-04-01 Epub Date: 2026-02-02 DOI: 10.1016/j.jcrysgro.2026.128517

Xinyu Lv , Youwen Zhao , Yong Huang , Wei Lu , Chenhui Li , Wenwen yang , Yihan Bai , Yingqiang Xu , Guiying Shen

{"title":"Evaluation of high quality 4-inch VGF-InAs substrates for infrared applications","authors":"Xinyu Lv , Youwen Zhao , Yong Huang , Wei Lu , Chenhui Li , Wenwen yang , Yihan Bai , Yingqiang Xu , Guiying Shen","doi":"10.1016/j.jcrysgro.2026.128517","DOIUrl":"10.1016/j.jcrysgro.2026.128517","url":null,"abstract":"<div><div>High-quality [100]-oriented 4-inch InAs single crystals with low dislocation density are successfully grown using the vertical gradient freezing (VGF) method and subsequently processed into substrates with superior surface quality through chemical mechanical polishing (CMP) for infrared detection applications. Comprehensive characterization of the InAs substrates is performed to evaluate the crystalline quality, optical/electrical properties, and surface characteristics. XRD analysis reveals excellent crystallinity and uniformity of the crystal, with an average rocking curve FWHM of 15.11 arcsec measured at 45 points on the 4-inch InAs substrate. The crystal demonstrates excellent crystalline integrity, as evidenced by dislocation etch pit density (EPD) measurements of 527 cm<sup>−2</sup> and 648 cm<sup>−2</sup> at the head and tail positions, respectively. In addition, the substrates exhibit remarkable electrical uniformity and achieved an average infrared transmittance of approximately 50% across the spectral range of 760–2300 cm⁻<sup>1</sup>. The 4-inch InAs substrates prepared by CMP and cleaning exhibit excellent flatness, atomically smooth and clean surfaces, with a total thickness variation (TTV) of less than 5 μm and a root-mean-square (RMS) roughness below 0.5 nm. Based on the “epi-ready” 4-inch InAs substrate, high-quality InAs/GaSb type-II superlattices are grown by metal–organic chemical vapor deposition (MOCVD). These optimized 4-inch InAs substrates provide a robust foundation for developing infrared detectors with higher pixel density.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"680 ","pages":"Article 128517"},"PeriodicalIF":2.0,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146171289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Multilayer nucleation at step walls: a low-barrier pathway for polytype control in SiC crystal growth 台阶壁上的多层成核：SiC晶体生长中多型控制的低势垒途径

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2026-04-01 Epub Date: 2026-01-29 DOI: 10.1016/j.jcrysgro.2026.128502

C.W. Lan

{"title":"Multilayer nucleation at step walls: a low-barrier pathway for polytype control in SiC crystal growth","authors":"C.W. Lan","doi":"10.1016/j.jcrysgro.2026.128502","DOIUrl":"10.1016/j.jcrysgro.2026.128502","url":null,"abstract":"<div><div>Unwanted polytype inclusions, such as 6H in 4H-SiC during physical vapor transport (PVT) or 4H in 3C-SiC during high-temperature solution growth (HTSG), pose significant challenges in SiC crystal growth for power electronics applications. Although prevailing studies highlight large-terrace two-dimensional (2D) nucleation under high supersaturation as the primary mechanism for polytype transitions, this does not fully explain inclusions at low driving forces. Here, we introduce a complementary low-barrier pathway inspired by multilayer twinning in silicon: a multilayer nucleation model at step-wall/terrace corners, governed by the interfacial wall affinity (Δγ<sub>e</sub>, representing the energy reduction relative to the wall/fluid interface) and polytype energy penalty (σ<sub>poly</sub>). By linking the effective driving force Δg<sub>eff</sub> to supersaturation (<em>S</em>) and undercooling (Δ<em>T</em>), we integrate our model with classical 2D nucleation theory. Results demonstrate that macro-steps enable multilayer embryos to amortize stacking penalties through layer-by-layer energy redistribution, facilitating foreign polytype nucleation at substantially lower supersaturation. This step-wall-mediated mechanism accounts for polytype inclusions under low driving forces, bridging gaps in terrace-based models. Proposed strategies to mitigate inclusions include minimizing macro-steps and tuning wall affinity via doping to elevate barriers, as validated by recent Al-doping experiments, offering a robust framework for precise polytype control and defect reduction in high-performance SiC crystal growth.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"680 ","pages":"Article 128502"},"PeriodicalIF":2.0,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146171293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0