Journal of Crystal Growth最新文献_第2页

Distribution of the highly volatile dopant in NaI:Tl crystals grown by the ROST technology ROST技术生长的高挥发性掺杂物在NaI:Tl晶体中的分布

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2025-07-23 DOI: 10.1016/j.jcrysgro.2025.128303

V. Protsenko, S. Gridin

引用次数: 0

Role of temperature oscillation in growth of large-grain CdZnTe single crystal by traveling heater method 温度振荡对行加热法制备大晶粒CdZnTe单晶生长的影响

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-07-22 DOI: 10.1016/j.jcrysgro.2025.128308

P. Vijayakumar , Subham Dhyani , K. Ganesan , R. Ramar , Edward Prabu Amaladass , R.M. Sarguna , S. Ganesamoorthy

{"title":"Role of temperature oscillation in growth of large-grain CdZnTe single crystal by traveling heater method","authors":"P. Vijayakumar , Subham Dhyani , K. Ganesan , R. Ramar , Edward Prabu Amaladass , R.M. Sarguna , S. Ganesamoorthy","doi":"10.1016/j.jcrysgro.2025.128308","DOIUrl":"10.1016/j.jcrysgro.2025.128308","url":null,"abstract":"<div><div>Self-nucleation in CdZnTe crystal growth remains a significant challenge, despite numerous attempts to achieve large-grain single crystals by restricting multi-nucleation during growth process using the traveling heater method. In this study, we present a novel approach to achieve large-grain CdZnTe single crystals by introducing temperature oscillations above the crystallization temperature during the growth process. This method effectively suppresses secondary nucleation and promotes the preferential selection of a single grain during early stage of growth as well as along the growth axis, by reducing multi-nucleation. By adjusting the amplitude and the number of temperature oscillations, we have successfully grown CdZnTe single crystals with dimensions of 20 mm in diameter and 60 mm in length. The resulting crystals exhibited excellent compositional homogeneity, with a nearly constant resistivity of ∼ 10<sup>9</sup> Ω·cm and Te inclusions smaller than 15 µm along the growth axis. Additionally, the crystal elements were of detector grade achieving an energy resolution of 4.5 % for gamma radiation at 662 keV from a <sup>137</sup>Cs source in a quasi-hemispherical geometry. This study highlights the critical role of temperature oscillations in controlling secondary nucleation and promoting the formation of large-grain single crystals.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"668 ","pages":"Article 128308"},"PeriodicalIF":1.7,"publicationDate":"2025-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144694647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Controlled recrystallization of high-purity, large-particle sodium bicarbonate crystals via CO2-assisted thermal stabilization 利用二氧化碳辅助热稳定技术控制高纯度大颗粒碳酸氢钠晶体的再结晶

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-07-21 DOI: 10.1016/j.jcrysgro.2025.128307

Haojie Jiang , Shuai Wang , Yixin Tang , Feng Ma , Lei Wu , Guoyong Wang , Wu Yin , Yiqiao Hu , Hong Dong

{"title":"Controlled recrystallization of high-purity, large-particle sodium bicarbonate crystals via CO2-assisted thermal stabilization","authors":"Haojie Jiang , Shuai Wang , Yixin Tang , Feng Ma , Lei Wu , Guoyong Wang , Wu Yin , Yiqiao Hu , Hong Dong","doi":"10.1016/j.jcrysgro.2025.128307","DOIUrl":"10.1016/j.jcrysgro.2025.128307","url":null,"abstract":"<div><div>Sodium bicarbonate (NaHCO<sub>3</sub>) is widely used in medicine, environmental protection, and industrial maintenance, yet the production of high-purity, uniformly sized, large-particle crystals remains challenging. Conventional methods, such as recrystallizing industrial-grade NaHCO<sub>3</sub> or carbonating soda ash, often fail to meet pharmaceutical-grade requirements efficiently. In this study, we developed a simplified, cost-effective recrystallization strategy by optimizing dissolution temperature, CO<sub>2</sub> pressure, stirring speed, and crystallization time. Dissolving NaHCO<sub>3</sub> at 75 ℃ under 0.2 MPa CO<sub>2</sub> minimized thermal decomposition and stabilized the supersaturated solution, while crystallization at 45 ℃ followed by a 4‑hour static growth phase produced large (300–400 μm), uniform crystals with enhanced purity and reproducibility. Four repeated crystallization cycles confirmed the high stability and yield of the process. This work offers a practical approach for reliably producing pharmaceutical-grade NaHCO<sub>3</sub> crystals and provides a valuable reference for advancing industrial crystallization technology.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"668 ","pages":"Article 128307"},"PeriodicalIF":1.7,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144694648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Styrax officinalis-mediated synthesis of ZnO-NPs potentially quorum sensing nano inhibitor 苯乙烯介导的ZnO-NPs潜在群体感应纳米抑制剂的合成

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-07-19 DOI: 10.1016/j.jcrysgro.2025.128304

Tahsin Huner , Deniz Kadir Takcı , Bekir Bulent Arpacı , Hatice Aysun Mercimek Takcı

{"title":"Styrax officinalis-mediated synthesis of ZnO-NPs potentially quorum sensing nano inhibitor","authors":"Tahsin Huner , Deniz Kadir Takcı , Bekir Bulent Arpacı , Hatice Aysun Mercimek Takcı","doi":"10.1016/j.jcrysgro.2025.128304","DOIUrl":"10.1016/j.jcrysgro.2025.128304","url":null,"abstract":"<div><div>We synthesized zinc oxide nanoparticles (ZnO-NPs) using an easy and applicable green approach using <em>Styrax officinalis</em> pericarp. The indirect band gap of sphere-shaped ZnONPs with about 17.53 nm size was 3.25 eV. The Zn-O stretching band of NPs showing slight agglomeration was observed at 476 ± 4.0 cm<sup>−1</sup>. The XRD analysis was carried out to determine the phase composition of Styrax-ZnO-NPs. The anti-virulence activity of NPs via inhibiting endogenous molecular signals-based QS regulation was tested for the two reference bacteria. ZnO-NPs displayed a dose-dependent efficacy, reducing a maximum of 99.82 and 82.36 % pigment production in <em>C. violaceum</em> 12472 and <em>P. aeruginosa</em> PA01, respectively. ZnO-NPs exhibited considerable antioxidant potential with a 14.94 ± 0.00 μg TE /mg phosphomolybdate activity. Moreover, ZnO-NPs showed bactericidal potency at the low minimum inhibitory concentration (0.25 mg/mL) against <em>E. coli</em> 25922 strain. Thus, our outcomes present an insight into the exploitation of Styrax-ZnO-NPs as an alternative therapeutic agent for the therapy of pathogenic infections.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"668 ","pages":"Article 128304"},"PeriodicalIF":1.7,"publicationDate":"2025-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144694707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of microwave electric field displacement on diamond deposition in microwave plasma chemical vapour deposition: a three-dimensional simulation study 微波电场位移对微波等离子体化学气相沉积中金刚石沉积影响的三维模拟研究

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-07-19 DOI: 10.1016/j.jcrysgro.2025.128305

Zhijian Guo , Zhiliang Yang , Yuchen Liu , Kang An , Liangxian Chen , Jinlong Liu , Junjun Wei , Chengming Li

{"title":"Effect of microwave electric field displacement on diamond deposition in microwave plasma chemical vapour deposition: a three-dimensional simulation study","authors":"Zhijian Guo , Zhiliang Yang , Yuchen Liu , Kang An , Liangxian Chen , Jinlong Liu , Junjun Wei , Chengming Li","doi":"10.1016/j.jcrysgro.2025.128305","DOIUrl":"10.1016/j.jcrysgro.2025.128305","url":null,"abstract":"<div><div>The investigation of the uniform deposition of large-area, high-quality diamond thick films has been a prominent focus of related research. Herein, a three-dimensional simulation of the microwave plasma chemical vapour deposition (MPCVD) reactor was conducted using the finite element method, with a three-dimensional (3D) model replicating the actual reactor dimensions built in COMSOL software. By analysing the 3D microwave electric field distribution within the resonant cavity, along with the <em>S</em><sub>11</sub> dB parameter related to port reflection, the influence of resonant cavity anharmonicity on microwave plasma deposition of large-area diamond was examined. The deflection and misalignment of the annular cone antenna at the top of the resonant cavity alter its intrinsic frequency, disrupting the optimal resonance between the microwave and the cavity. Consequently, the waveguide transitions from an axially symmetric transmission mode to a non-axially symmetric one, resulting in variations in the microwave electric field distribution under the influence of the substrate holder within the cavity. Based on actual feedback from the diamond film deposition process, precise optimisation of the resonant cavity’s top structure can significantly reduce irregularities in the microwave electric field distribution. This allows for better concentration of maximum field strength at the intended central position and minimises the effects of anharmonicity. This study offers theoretical support for further enhancing the uniform deposition of large-area diamond thick films in MPCVD systems.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"668 ","pages":"Article 128305"},"PeriodicalIF":1.7,"publicationDate":"2025-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144680785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Mild-Condition synthesis of BiSCl microcrystals and its application as a cantilever Sensor for mechanical vibration sensing BiSCl微晶体的温和条件合成及其作为悬臂式机械振动传感器的应用

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-07-11 DOI: 10.1016/j.jcrysgro.2025.128302

Jakub Jała , Tushar Kanti Das , Bartłomiej Nowacki , Bartłomiej Toroń , Krystian Mistewicz , Mirosława Kępińska , Klaudia Kurtyka , Marcin Godzierz

{"title":"Mild-Condition synthesis of BiSCl microcrystals and its application as a cantilever Sensor for mechanical vibration sensing","authors":"Jakub Jała , Tushar Kanti Das , Bartłomiej Nowacki , Bartłomiej Toroń , Krystian Mistewicz , Mirosława Kępińska , Klaudia Kurtyka , Marcin Godzierz","doi":"10.1016/j.jcrysgro.2025.128302","DOIUrl":"10.1016/j.jcrysgro.2025.128302","url":null,"abstract":"<div><div>A simple and reliable method for synthesizing the ternary chalcohalide bismuth sulfochloride (BiSCl) microcrystals has been developed. The proposed method utilizes mild solvents and temperatures up to 180 °C, achieving BiSCl synthesis within seven hours without requiring an autoclave or specialized equipment. The resulting crystals, characterized by scanning electron microscopy (SEM), exhibit an elongated rectangular morphology with sizes ranging from micrometers to sub-micrometers. X-ray diffraction (XRD) confirms the predominance of the BiSCl Pnam phase. Optical properties were investigated using UV–Vis spectroscopy, with diffuse reflectance spectroscopy (DRS) determining an indirect forbidden band gap of 1.71 eV and a direct allowed band gap of 2.04 eV. A flexible (3–3) mode cantilever device was fabricated via drop-casting and tested under ambient conditions using a magnetic shaker in the 5–200 Hz frequency range. The results demonstrate the potential of BiSCl for vibration sensing, showing a voltage response in the millivolt range.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"668 ","pages":"Article 128302"},"PeriodicalIF":1.7,"publicationDate":"2025-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144605078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Deep learning-assisted crystal growth: A soft sensor approach for diameter prediction in silicon single crystals 深度学习辅助晶体生长：硅单晶直径预测的软传感器方法

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-07-05 DOI: 10.1016/j.jcrysgro.2025.128292

Lingxiang Quan , Pengju Zhang , Hao Pan , Ding Liu

{"title":"Deep learning-assisted crystal growth: A soft sensor approach for diameter prediction in silicon single crystals","authors":"Lingxiang Quan , Pengju Zhang , Hao Pan , Ding Liu","doi":"10.1016/j.jcrysgro.2025.128292","DOIUrl":"10.1016/j.jcrysgro.2025.128292","url":null,"abstract":"<div><div>Shoulder is a critical stage in the semiconductor Czochralski silicon single crystal growth process, directly affecting crystal quality, thermal stress distribution, and the stable transition to the constant diameter growth phase. Precise control of the crystal diameter is essential for maintaining stable diameter growth and reducing internal defects. However, the nonlinear dynamics of the process and structural limitations of measurement equipment pose challenges, including missing diameter data that hinder accurate modeling. To address these challenges, this paper proposes a novel soft sensor model called the generative adaptive dynamic kolmogorov network (GADKN), which integrates a generative adversarial imputation network (GAIN) and an adaptive dynamic kolmogorov network (ADKN). First, GAIN is utilized to impute missing diameter values caused by sensor limitations. Then, an adaptive simplified minimal unit (ASMU), which combines a simple recurrent unit (SRU) and a minimal gated unit (MGU), is developed to capture the nonlinear dynamics of the process data. A dynamic sparse self-attention (DSSA) mechanism is further incorporated to extract latent features from the multivariate process inputs. Finally, a kolmogorov–arnold network (KAN) module is employed to enhance the accuracy and robustness of diameter prediction. The proposed GADKN model is validated using real-world data from the silicon crystal growth process, demonstrating superior predictive performance and practical applicability.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"668 ","pages":"Article 128292"},"PeriodicalIF":1.7,"publicationDate":"2025-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144572293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Oxygen plasma-assisted pulsed laser deposition of terbium doped Ga2O3 films 氧等离子体辅助脉冲激光沉积掺铽Ga2O3薄膜

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-07-01 DOI: 10.1016/j.jcrysgro.2025.128290

Qixin Guo, Yuki Kawano, Kento Imari, Katsuhiko Saito, Tooru Tanaka

{"title":"Oxygen plasma-assisted pulsed laser deposition of terbium doped Ga2O3 films","authors":"Qixin Guo, Yuki Kawano, Kento Imari, Katsuhiko Saito, Tooru Tanaka","doi":"10.1016/j.jcrysgro.2025.128290","DOIUrl":"10.1016/j.jcrysgro.2025.128290","url":null,"abstract":"<div><div>This study presents the growth of terbium (Tb) doped Ga<sub>2</sub>O<sub>3</sub> films using oxygen plasma-assisted pulsed laser deposition (PLD). The effects of substrate temperatures, varied from 100 ℃ to 500 ℃, on the structural and optical properties of the films were systematically investigated. X-ray diffraction analysis revealed that the use of oxygen plasma significantly enhances the crystalline quality of (−201)-oriented Ga<sub>2</sub>O<sub>3</sub> films compared to those grown by conventional PLD without plasma assistance. Notably, the incorporation of oxygen plasma enabled the formation of crystalline Tb doped Ga<sub>2</sub>O<sub>3</sub> at a reduced substrate temperature of 300 °C, ensured more stable growth rates, and enhanced both optical and luminescent properties. These results highlight the potential of plasma-assisted PLD as a viable approach for fabricating high-quality Ga<sub>2</sub>O<sub>3</sub> films at low temperatures, paving the way for advanced electronic and optoelectronic devices compatible with conventional Si-based integrated circuits.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"668 ","pages":"Article 128290"},"PeriodicalIF":1.7,"publicationDate":"2025-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144523458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation of the effect of heater electrode heat transfer on heat losses in Czochralski silicon crystal growth based on 3D global numerical simulation 基于三维全局数值模拟的加热电极传热对直克拉拉斯基硅晶体生长热损失影响的研究

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-06-25 DOI: 10.1016/j.jcrysgro.2025.128284

Chao Qi, Dengnian Li, Junlan Wang, Zeqi Zhong, Yao Yang, Zaoyang Li, Lijun Liu

引用次数: 0

Reactive crystallisation kinetics of sodium bicarbonate using sodium sulphate spent salt solutions 用硫酸钠废盐溶液研究碳酸氢钠的反应结晶动力学

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-06-21 DOI: 10.1016/j.jcrysgro.2025.128285

Luyan Wang, Weihua Shen, Yunjin Fang

{"title":"Reactive crystallisation kinetics of sodium bicarbonate using sodium sulphate spent salt solutions","authors":"Luyan Wang, Weihua Shen, Yunjin Fang","doi":"10.1016/j.jcrysgro.2025.128285","DOIUrl":"10.1016/j.jcrysgro.2025.128285","url":null,"abstract":"<div><div>Under China’s “Dual Carbon” strategy, in order to treat sodium sulfate waste brine for environmental protection, an innovative ammonium bicarbonate conversion method was developed. However, the industrialization of the method currently faces a bottleneck in crystallizer design challenges. To provide theoretical basis for the equipment design and industrial operations, this study investigates the continuous crystallization kinetics based on a Mixed Suspension Mixed Product Removal (MSMPR) crystallizer. The kinetic analysis demonstrated: (1) Crystal growth rate follows power-law dependence on supersaturation; (2) Nucleation rate shows dual dependence on growth rate and suspension density. Sodium bicarbonate crystallization is surface reaction-controlled, and the nucleation rate is highly sensitive to changes in the growth rate in Na<sub>2</sub>SO<sub>4</sub>-rich solutions. The suspension density exponent confirms enhanced nucleation with increased crystal load. Additionally, this study innovatively introduces the additive sodium hexametaphosphate into the batch operation, successfully preparing density soda ash, and thereby enhances the economic benefits of the process.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"668 ","pages":"Article 128285"},"PeriodicalIF":1.7,"publicationDate":"2025-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144364464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0