Journal of Crystal Growth最新文献_第2页

Microstructural evolution and crystalline behavior in silicon carbide nano-powder during selective laser melting: A molecular dynamics simulation 选择性激光熔化过程中碳化硅纳米粉体的微结构演变和结晶行为：分子动力学模拟

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2024-11-02 DOI: 10.1016/j.jcrysgro.2024.127985

Amin Hamed Mashhadzadeh , Maryam Zarghami Dehaghani , Haris Doumanidis , Boris Golman , Konstantinos V. Kostas , Christos Spitas

{"title":"Microstructural evolution and crystalline behavior in silicon carbide nano-powder during selective laser melting: A molecular dynamics simulation","authors":"Amin Hamed Mashhadzadeh , Maryam Zarghami Dehaghani , Haris Doumanidis , Boris Golman , Konstantinos V. Kostas , Christos Spitas","doi":"10.1016/j.jcrysgro.2024.127985","DOIUrl":"10.1016/j.jcrysgro.2024.127985","url":null,"abstract":"<div><div>Silicon carbide (SiC), with its isotropic three-dimensional diamond lattice structure, emerges as a promising candidate for SiC device production through selective laser melting (SLM). The appeal lies in its simplified fabrication process, coupled with outstanding thermal properties, high hardness, and remarkable wear resistance. This potential of SiC in SLM not only streamlines the fabrication process but also harnesses the exceptional properties inherent in SiC. In this study, we utilized molecular dynamics (MD) simulations to model the SLM process. A nanopowder bed made up of approximately half a million atoms of SiC was simulated as a two-layer quasi-2D system. Controlled heating of SiC meltpools, slightly surpassing the melting temperature, facilitated the monitored coalescence of nano-powders, resulting in successful melting and the formation of continuous domains within the meltpools. The observed reduction in crystalline structures is due to the elevated thermal energy imparted to the SiC atoms during the heating process, which disrupts the atomic arrangement and leads to a transition from crystalline to amorphous states. The subsequent solidification process, characterized by a high cooling rate, led to the establishment of final amorphous solidified domains. Looking ahead, our research aims to delve into exploring the structural and functional characteristics of the produced SiC devices, evaluating their potential applications across diverse technological domains.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"650 ","pages":"Article 127985"},"PeriodicalIF":1.7,"publicationDate":"2024-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142652413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ammonia-free quasi-atmospheric MOCVD of InN/Al2O3 (0001) InN/Al2O3 (0001) 的无氨准大气 MOCVD

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2024-11-02 DOI: 10.1016/j.jcrysgro.2024.127980

Hisashi Yamada , Tokio Takahashi , Takahiro Gotow , Naoto Kumagai , Tetsuji Shimizu , Toshihide Ide , Tatsuro Maeda

引用次数: 0

Transferrable GaN-based Micro-LED heterostructures grown on h-BN for optogenetic applications 在 h-BN 上生长的可转移 GaN 基微型 LED 异质结构用于光遗传学应用

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2024-11-02 DOI: 10.1016/j.jcrysgro.2024.127979

T.M. Tran , A. Kassem , V. Ottapilakkal , P. Vuong , R. Gujrati , M. Bourras , A. Srivastava , A. Perepeliuc , T. Moudakir , S. Gautier , S. Bouchoule , M. Tchernycheva , P.L. Voss , S. Sundaram , J.P. Salvestrini , A. Ougazzaden

{"title":"Transferrable GaN-based Micro-LED heterostructures grown on h-BN for optogenetic applications","authors":"T.M. Tran , A. Kassem , V. Ottapilakkal , P. Vuong , R. Gujrati , M. Bourras , A. Srivastava , A. Perepeliuc , T. Moudakir , S. Gautier , S. Bouchoule , M. Tchernycheva , P.L. Voss , S. Sundaram , J.P. Salvestrini , A. Ougazzaden","doi":"10.1016/j.jcrysgro.2024.127979","DOIUrl":"10.1016/j.jcrysgro.2024.127979","url":null,"abstract":"<div><div>Individually transferrable GaN-based MQWs micro-LED structures grown on two-dimensional (2D) hexagonal boron nitride (h-BN) have been demonstrated. Different sizes (60 × 30 µm, 60 × 60 µm, 90 × 60 µm and 90 × 90 µm) of GaN-based LED heterostructures on layered h-BN were grown on dielectric SiN patterned sapphire substrates using Metal Organic Vapor Phase Epitaxy (MOVPE). Scanning electron microscope (SEM) images show micro-LEDs were grown with high selectivity within the mask opening areas. Consistent MQWs emission from micro-LEDs was observed at 452 ± 2 nm by cathodoluminescence (CL) spectroscopy for all micro-LED sizes. The structural and optical quality were similar to the GaN-based-LEDs grown on unpatterned substrates. In addition, we have successfully demonstrated the lift-off and transfer of individual micro-LEDs to arbitrary flexible templates using a transfer printing machine, which can be addressed by full front-end process. These studies highlight the role of combination of van der Waals (vdW) epitaxy and selective area growth (SAG) in facilitating the direct realization of dimensionally defined III-Nitride micro-LED structures and the mechanical release and transfer of these micro-LEDs to templates suitable for flexible display and optogenetics applications.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"650 ","pages":"Article 127979"},"PeriodicalIF":1.7,"publicationDate":"2024-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142652415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Hydrothermal growth of potassium tantalate niobate crystals 钽酸铌酸钾晶体的水热生长

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2024-10-30 DOI: 10.1016/j.jcrysgro.2024.127983

Jingfang Tong , Haitao Zhou , Huajian Yu , Wenyuan Wu , Xudong Song , Weidi Zhao , Changlong Zhang , Xuping Wang

引用次数: 0

Evaluation of AlN insertion layer on the properties of heterogeneous integrated Ga2O3 films on sapphire 评估氮化铝插入层对蓝宝石上异质集成 Ga2O3 薄膜特性的影响

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2024-10-30 DOI: 10.1016/j.jcrysgro.2024.127977

Anfeng Wang , Ming-Qian Yuan , Yun-Duo Guo , Lin Gu , Yi Shen , Chengxi Ding , Xuejun Yan , Qing-Chun Zhang , Li Zhang , Xiao-Dong Zhang , Hong-Ping Ma

{"title":"Evaluation of AlN insertion layer on the properties of heterogeneous integrated Ga2O3 films on sapphire","authors":"Anfeng Wang , Ming-Qian Yuan , Yun-Duo Guo , Lin Gu , Yi Shen , Chengxi Ding , Xuejun Yan , Qing-Chun Zhang , Li Zhang , Xiao-Dong Zhang , Hong-Ping Ma","doi":"10.1016/j.jcrysgro.2024.127977","DOIUrl":"10.1016/j.jcrysgro.2024.127977","url":null,"abstract":"<div><div>Integration of gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) with highly thermal conductive AlN/sapphire substrate is more effective to dissipate heat in the Ga<sub>2</sub>O<sub>3</sub>-based devices. In this work, the properties of Ga<sub>2</sub>O<sub>3</sub> films grown on sapphire and AlN/sapphire substrates via MOCVD were both examined via various experimental methods. The X-ray diffraction (XRD) analysis showed good crystallinity and different orientations of Ga<sub>2</sub>O<sub>3</sub> and AlN thin films. The absorption properties and band gaps were extracted from UV/Vis spectra. The atomic force microscopy (AFM) scanning images showed smooth Ga<sub>2</sub>O<sub>3</sub> surfaces on sapphire and AlN/sapphire substrates (RMSs of 2.4 nm and 4.8 nm, respectively). The scanning electron microscopy (SEM) highlighted well-defined grains of Ga<sub>2</sub>O<sub>3</sub> and distinct boundaries of both heterostructures. X-ray photoelectron spectroscopy (XPS) analysis depicted the distributions of various components throughout the films. Finally, by using the time-domain thermoreflectance (TDTR) method, the thermal conductivity and the thermal boundary conductivity of Ga<sub>2</sub>O<sub>3</sub> without AlN interlayer were found to be 3.1 W/(m·K) and 70.1 MW/(m<sup>2</sup>·K) respectively. By comparison, adding AlN interlayer made the thermal conductivity and thermal boundary conductivity rise to 3.3 W/(m·K) and 111.5 MW/(m<sup>2</sup>·K) respectively. These findings have demonstrated the high-quality Ga<sub>2</sub>O<sub>3</sub>/AlN integration and good heat dissipation provided by AlN interlayer, opening up new prospects for Ga<sub>2</sub>O<sub>3</sub>/AlN devices in the future.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"649 ","pages":"Article 127977"},"PeriodicalIF":1.7,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142572812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-pressure self-flux growth and characterization of Li-deficient Li0.95FeAs single crystals 缺锂 Li0.95FeAs 单晶的高压自流生长和表征

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2024-10-30 DOI: 10.1016/j.jcrysgro.2024.127981

N.D. Zhigadlo

{"title":"High-pressure self-flux growth and characterization of Li-deficient Li0.95FeAs single crystals","authors":"N.D. Zhigadlo","doi":"10.1016/j.jcrysgro.2024.127981","DOIUrl":"10.1016/j.jcrysgro.2024.127981","url":null,"abstract":"<div><div>Single crystals of LiFeAs were successfully grown by a self-flux method using the cubic anvil high-pressure and high-temperature technique. The reaction took place in a closed boron nitride crucible at a pressure of 1 GPa and a temperature of 1050 °C. The grown crystals, retrieved from solidified lump, exhibit plate-like shapes with sizes up to 0.7 × 0.7 × 0.15 mm<sup>3</sup>. Single-crystal x-ray diffraction refinement confirmed the high structural perfection of the grown crystals [space group <em>P</em>4/<em>nmm</em>, No 129, <em>Z</em> = 2, <em>a</em> = 3.77370(10) Å, <em>c</em> = 6.3468(6) Å, and <em>V</em> = 90.384(9) Å<sup>3</sup>] with the presence of a small deficiency on the Li site. The refined chemical composition of the produced crystals is Li<sub>0.95</sub>FeAs. Temperature-dependent magnetization measurements revealed bulk superconductivity with a superconducting transition <em>T</em><sub>c</sub> = 16 K. A comparative analysis of LiFeAs, Li<sub>1-</sub><em><sub>x</sub></em>FeAs, and Li<sub>1-</sub><em><sub>y</sub></em>Fe<sub>1+</sub><em><sub>y</sub></em>As systems reveal that superconductivity is less sensitive to the Li deficiency, although it may completely disappear in the presence of both Fe excess and Li deficiency.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"649 ","pages":"Article 127981"},"PeriodicalIF":1.7,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142572814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optical and scintillation properties of YAlO3:Ce scintillating single crystal fibers grown by laser heated pedestal growth method 激光加热基座生长法生长的 YAlO3:Ce 闪烁单晶光纤的光学和闪烁特性

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2024-10-29 DOI: 10.1016/j.jcrysgro.2024.127938

Yuke Ou , Xibin Wang , Xu Wu , Huamin Kou , Anhua Wu , Liangbi Su

引用次数: 0

Growth of single crystalline GeSn alloy epilayer on Gd2O3/Si (111) engineered insulating substrate using RF sputtering and solid phase epitaxy 利用射频溅射和固相外延技术在 Gd2O3/Si (111) 工程绝缘衬底上生长单晶 GeSn 合金外延层

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2024-10-28 DOI: 10.1016/j.jcrysgro.2024.127972

Dushyant Singh , Tharundev V V , Subha Maity , Dhammapriy Gayakwad , H. Jörg Osten , Saurabh Lodha , Krista R Khiangte

{"title":"Growth of single crystalline GeSn alloy epilayer on Gd2O3/Si (111) engineered insulating substrate using RF sputtering and solid phase epitaxy","authors":"Dushyant Singh , Tharundev V V , Subha Maity , Dhammapriy Gayakwad , H. Jörg Osten , Saurabh Lodha , Krista R Khiangte","doi":"10.1016/j.jcrysgro.2024.127972","DOIUrl":"10.1016/j.jcrysgro.2024.127972","url":null,"abstract":"<div><div>The article showcases a low-cost, low-temperature deposition andHVMtechnique to develop single crystalline GeSn alloy epilayers on Gd<sub>2</sub>O<sub>3</sub>/Si (111) substrate. First, GeSn alloy amorphous layer is deposited on the insulating substrates using an Radio Frequency (RF) sputtering apparatus. Subsequently, an inductively coupled plasma-assisted chemical vapor deposition (ICP-CVD) process is used to deposit a SiO<sub>2</sub> capping layer to protect against Sn out-diffusion during heat treatment. The samples are then subjected to solid phase epitaxy (SPE) at 450 °C, 550 °C, and 650 °C. Sample processed for SPE at 450 °C has weak crystallinity and only shows Type-A stacking. Those processed for SPE at 550 °C and 650 °C, on the other hand, have revealed formation of the single-crystalline GeSn alloy epilayer with Type-A and Type-B stacking. However, SPE at 650 °C revealed tin out-diffusion and segregation effects. This work is significant for enabling the preparation of high-Sn-content GeSn alloy epilayers on insulating Gd<sub>2</sub>O<sub>3</sub>/Si (111) substrates, as it requires the initial deposition of a GeSn amorphous alloy epilayer using RF sputtering. This advancement promises benefits which includes advantages such as lower operating voltage, reduced leakage current, and minimized parasitic and short-channel effects, making it ideal for advancing RF technology.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"649 ","pages":"Article 127972"},"PeriodicalIF":1.7,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142552960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Simultaneous recovery of ammonium sulfate and ice from aqueous solution using eutectic freeze crystallization process 利用共晶冷冻结晶工艺从水溶液中同时回收硫酸铵和冰

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2024-10-28 DOI: 10.1016/j.jcrysgro.2024.127956

W.H.T. Ting , S.F. Salleh , N. Abdul Wahab , M.F. Atan , A.A. Abdul Raman , W.K. Ting , S.L. Kong , L.S. Lam , I.A.W. Tan

{"title":"Simultaneous recovery of ammonium sulfate and ice from aqueous solution using eutectic freeze crystallization process","authors":"W.H.T. Ting , S.F. Salleh , N. Abdul Wahab , M.F. Atan , A.A. Abdul Raman , W.K. Ting , S.L. Kong , L.S. Lam , I.A.W. Tan","doi":"10.1016/j.jcrysgro.2024.127956","DOIUrl":"10.1016/j.jcrysgro.2024.127956","url":null,"abstract":"<div><div>This study investigated the feasibility of eutectic freeze crystallization (EFC) process for ammonium sulfate (AS) salt recovery from 41 wt% AS solution. The EFC experiments were conducted using a 1 L double-jacketed crystallizer coupled with a recirculating chiller under varying freezing time, seed mass and seed size. The EFC process demonstrated successful AS salt recovery and water purification with the highest ice purity attained at 96.28 %. The construction of a binary AS-water phase diagram allowed the determination of the eutectic temperature, which was found to be −19.06 °C at 40 wt% of AS solution. The results indicated that the increase in freezing time enhanced the AS nucleation rate, growth rate, yield and mean product crystal size. The introduction of seeding not only provided well-controlled crystal nucleation and growth during EFC process, but also promoted the formation of larger, well-structured crystals and reduced agglomeration. Overall, the EFC process is a viable and promising option for recovering AS from wastewater, which offers high potential towards achieving zero liquid discharge goal, i.e. a sustainable and efficient approach in managing industrial effluent rich in ammonium and sulfate contaminants.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"649 ","pages":"Article 127956"},"PeriodicalIF":1.7,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142572813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermal conductivity of GaN with a vacancy and an oxygen point defect 具有空位和氧点缺陷的氮化镓的热导率

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2024-10-28 DOI: 10.1016/j.jcrysgro.2024.127948

Takahiro Kawamura , Ryogo Nishiyama , Toru Akiyama , Shigeyoshi Usami , Masayuki Imanishi , Yusuke Mori , Masashi Yoshimura

{"title":"Thermal conductivity of GaN with a vacancy and an oxygen point defect","authors":"Takahiro Kawamura , Ryogo Nishiyama , Toru Akiyama , Shigeyoshi Usami , Masayuki Imanishi , Yusuke Mori , Masashi Yoshimura","doi":"10.1016/j.jcrysgro.2024.127948","DOIUrl":"10.1016/j.jcrysgro.2024.127948","url":null,"abstract":"<div><div>GaN has high thermal conductivity, therefore it is expected to be used in high-power, high-frequency, and compact electronic devices. However, GaN includes many defects and impurities, which reduce its thermal conductivity. Therefore, the effect of defects and impurities on the thermal conductivity of GaN needs to be understood for optimal thermal management. In this study, the thermal conductivity of GaN in three cases – with a Ga vacancy, an N vacancy, and an O impurity substituted at an N site – was investigated using first-principles calculations. Thermal conductivity was calculated based on the Boltzmann transportation equation under the relaxation time approximation. At 300 K, the thermal conductivity values of pure GaN and GaN with a Ga vacancy, an N vacancy, and an O substitutional impurity (defect concentrations<span><math><mrow><mo>∼</mo><mn>1</mn><mo>.</mo><mn>3</mn><mo>×</mo><mn>10</mn></mrow></math></span><sup>21</sup> cm<sup>−3</sup>) were 325, 74, 70, and 138 W/(m K), respectively. It was found from the spectrum of thermal conductivity that acoustic phonons at frequencies lower than 10 THz were responsible for most of the thermal conductivity of GaN. We also examined the effect of sample size on thermal conductivity and found that the cumulative thermal conductivity value of pure GaN was less than 9% of the bulk value, when the sample size was smaller than 100 nm.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"649 ","pages":"Article 127948"},"PeriodicalIF":1.7,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142552962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0