Journal of Crystal Growth最新文献_第2页

Synthesis and characterization of malladrite from zeolitized brazilian bentonite 沸石巴西膨润土制备绿锰矿石及表征

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-07-18 DOI: 10.1016/j.jcrysgro.2025.128306

David Enrique Vega Porras, Rômulo Simões Angélica, Simone Patrícia Aranha da Paz

引用次数: 0

The suppression of volatilization via high pressure during melt crystal growth: Analysis via two models of the optical floating zone 熔体晶体生长过程中高压对挥发的抑制：通过光学浮区的两种模型进行分析

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-07-12 DOI: 10.1016/j.jcrysgro.2025.128288

Scott S. Dossa , Jeffrey J. Derby

{"title":"The suppression of volatilization via high pressure during melt crystal growth: Analysis via two models of the optical floating zone","authors":"Scott S. Dossa , Jeffrey J. Derby","doi":"10.1016/j.jcrysgro.2025.128288","DOIUrl":"10.1016/j.jcrysgro.2025.128288","url":null,"abstract":"<div><div>We investigate the role of ambient pressure on volatilization during melt crystal growth using the high-pressure optical floating zone (OFZ) as a prototypical model. Species transport is incorporated into a previously-developed, thermal-capillary model which includes the effects of energy and momentum transport while computing the shape of the zone meniscus, melting front, and solidification front. Results from this model show that pressure monotonically decreases volatilization from the melt zone into the ambient gas and that species transport is both inhibited via diffusion and enhanced via convection as pressure increases. A lumped-parameter model corroborates these findings and clarifies the interaction between diffusion and convection using boundary-layer theory. While increasing pressure always suppresses volatilization, the concurrent strengthening of gas-phase flows with pressure diminishes its effects. For the OFZ system studied here, the evaporative flux of volatile species from melt scales nonlinearly with pressure as <span><math><mrow><msub><mrow><mi>J</mi></mrow><mrow><mi>i</mi></mrow></msub><mo>∼</mo><msup><mrow><mi>P</mi></mrow><mrow><mo>−</mo><mn>2</mn><mo>/</mo><mn>5</mn></mrow></msup></mrow></math></span>, which is greater than the expected scaling of <span><math><mrow><msub><mrow><mi>J</mi></mrow><mrow><mi>i</mi></mrow></msub><mo>∼</mo><msup><mrow><mi>P</mi></mrow><mrow><mo>−</mo><mn>1</mn></mrow></msup></mrow></math></span> when gas-phase convection is unimportant.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"668 ","pages":"Article 128288"},"PeriodicalIF":1.7,"publicationDate":"2025-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144653522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Mild-Condition synthesis of BiSCl microcrystals and its application as a cantilever Sensor for mechanical vibration sensing BiSCl微晶体的温和条件合成及其作为悬臂式机械振动传感器的应用

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-07-11 DOI: 10.1016/j.jcrysgro.2025.128302

Jakub Jała , Tushar Kanti Das , Bartłomiej Nowacki , Bartłomiej Toroń , Krystian Mistewicz , Mirosława Kępińska , Klaudia Kurtyka , Marcin Godzierz

{"title":"Mild-Condition synthesis of BiSCl microcrystals and its application as a cantilever Sensor for mechanical vibration sensing","authors":"Jakub Jała , Tushar Kanti Das , Bartłomiej Nowacki , Bartłomiej Toroń , Krystian Mistewicz , Mirosława Kępińska , Klaudia Kurtyka , Marcin Godzierz","doi":"10.1016/j.jcrysgro.2025.128302","DOIUrl":"10.1016/j.jcrysgro.2025.128302","url":null,"abstract":"<div><div>A simple and reliable method for synthesizing the ternary chalcohalide bismuth sulfochloride (BiSCl) microcrystals has been developed. The proposed method utilizes mild solvents and temperatures up to 180 °C, achieving BiSCl synthesis within seven hours without requiring an autoclave or specialized equipment. The resulting crystals, characterized by scanning electron microscopy (SEM), exhibit an elongated rectangular morphology with sizes ranging from micrometers to sub-micrometers. X-ray diffraction (XRD) confirms the predominance of the BiSCl Pnam phase. Optical properties were investigated using UV–Vis spectroscopy, with diffuse reflectance spectroscopy (DRS) determining an indirect forbidden band gap of 1.71 eV and a direct allowed band gap of 2.04 eV. A flexible (3–3) mode cantilever device was fabricated via drop-casting and tested under ambient conditions using a magnetic shaker in the 5–200 Hz frequency range. The results demonstrate the potential of BiSCl for vibration sensing, showing a voltage response in the millivolt range.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"668 ","pages":"Article 128302"},"PeriodicalIF":1.7,"publicationDate":"2025-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144605078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Atomistic simulation solution of MBE epitaxy of 6.1-Å semiconductors multiple QW heterostructures 6.1-Å半导体多量子阱异质结构MBE外延的原子模拟解

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-07-08 DOI: 10.1016/j.jcrysgro.2025.128295

P.K. Saxena, P. Srivastava, A. Srivastava, A. Saxena

{"title":"Atomistic simulation solution of MBE epitaxy of 6.1-Å semiconductors multiple QW heterostructures","authors":"P.K. Saxena, P. Srivastava, A. Srivastava, A. Saxena","doi":"10.1016/j.jcrysgro.2025.128295","DOIUrl":"10.1016/j.jcrysgro.2025.128295","url":null,"abstract":"<div><div>The authors present an atomistic approach aimed at replicating the real-time Molecular Beam Epitaxy (MBE) experiment of a Triple-Barrier Resonant Tunneling (TBRT) heterostructure, which is constructed from InAs/AlSb heterojunctions. This work is directed towards potential applications in CMOS-based memory by optimizing the thickness of various layers. The study investigates the impact of MBE reactor geometry and the kinetic Monte Carlo (kMC) method, which encompasses adsorption, diffusion, and desorption processes, all examined at an atomistic scale with precision at the level of individual deposited atoms. A thorough exploration of the energy barriers encountered during the deposition process is conducted, particularly in relation to the validation of experimental results published by Akihiro Ohtake’s and Peter D. Hodgson's research groups [1],[3]. The Frank-van der Merwe growth mode was found to be the predominant mechanism during the growth phase. The growth morphology of the heterostructures is accurately replicated, providing a deeper understanding of the underlying physics associated with the atomistic phenomena in each material layer. The proposed technique allows for precise predictions of various output parameters, such as growth rate, defect types, their densities relative to position within the lattice, and layer-by-layer lattice parameters. Furthermore, the optimization of input parameters, based on the proposed generalized MBE epitaxy model, facilitates the thickness optimization of each material layer, ultimately leading to the development of high-performance devices. This technique has demonstrated its effectiveness in accelerating the MBE epitaxy process from development to production timelines.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"668 ","pages":"Article 128295"},"PeriodicalIF":1.7,"publicationDate":"2025-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144595396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Glucose mediated biosynthesis of pristine ZnS and Ag-ZnS nanostructures for waste-water treatment: the antagonistic effect between ZnS and Ag 葡萄糖介导的用于废水处理的原始ZnS和Ag-ZnS纳米结构的生物合成：ZnS和Ag之间的拮抗作用

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-07-07 DOI: 10.1016/j.jcrysgro.2025.128294

Dhrubajyoti Samanta

{"title":"Glucose mediated biosynthesis of pristine ZnS and Ag-ZnS nanostructures for waste-water treatment: the antagonistic effect between ZnS and Ag","authors":"Dhrubajyoti Samanta","doi":"10.1016/j.jcrysgro.2025.128294","DOIUrl":"10.1016/j.jcrysgro.2025.128294","url":null,"abstract":"<div><div>This investigation reports on the synthesis of pristine ZnS nanospheres and Ag-ZnS nanoflowers assisted by glucose. The crystallographic, morphological and elemental composition were analysed by various techniques. Cubic sphalerite crystal structure for both the nanomaterials (NMs) was confirmed from X-Ray Diffraction (XRD) analysis. The flower-like morphology was revealed by Field Emission Scanning Electron Microscope (FESEM) images for Ag-ZnS while spherical nanostructure was observed for ZnS. The High-Resolution Transmission Electron Microscope (HRTEM) image revealed the presence of criss-crossed lattice fringes for Ag-ZnS nanoflowers, confirming the formation of Ag-ZnS nanocomposite (NC). Blue-shift in the absorbance maxima of as-synthesized ZnS NMs and Ag-ZnS NC compared to bulk ZnS revealed the formation of nanoparticles (NPs). The influence of Ag on the emission behaviour of ZnS was studied by Photoluminesence (PL) spectroscopy. Highly intense green emission peak at 546 nm for Ag-ZnS was due to the trapping of photo-generated electrons by Ag<sup>+</sup> ions. The oxidation state of silver in Ag-ZnS sample was +1 as confirmed from X-Ray Photo-electron Spectroscopy (XPS). Sunlight driven photocatalytic degradation of Rhodamine B (RhB) (a prominent component of wastewater) by the afore-mentioned nanomaterials was observed.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"668 ","pages":"Article 128294"},"PeriodicalIF":1.7,"publicationDate":"2025-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144589176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Deep learning-assisted crystal growth: A soft sensor approach for diameter prediction in silicon single crystals 深度学习辅助晶体生长：硅单晶直径预测的软传感器方法

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-07-05 DOI: 10.1016/j.jcrysgro.2025.128292

Lingxiang Quan , Pengju Zhang , Hao Pan , Ding Liu

{"title":"Deep learning-assisted crystal growth: A soft sensor approach for diameter prediction in silicon single crystals","authors":"Lingxiang Quan , Pengju Zhang , Hao Pan , Ding Liu","doi":"10.1016/j.jcrysgro.2025.128292","DOIUrl":"10.1016/j.jcrysgro.2025.128292","url":null,"abstract":"<div><div>Shoulder is a critical stage in the semiconductor Czochralski silicon single crystal growth process, directly affecting crystal quality, thermal stress distribution, and the stable transition to the constant diameter growth phase. Precise control of the crystal diameter is essential for maintaining stable diameter growth and reducing internal defects. However, the nonlinear dynamics of the process and structural limitations of measurement equipment pose challenges, including missing diameter data that hinder accurate modeling. To address these challenges, this paper proposes a novel soft sensor model called the generative adaptive dynamic kolmogorov network (GADKN), which integrates a generative adversarial imputation network (GAIN) and an adaptive dynamic kolmogorov network (ADKN). First, GAIN is utilized to impute missing diameter values caused by sensor limitations. Then, an adaptive simplified minimal unit (ASMU), which combines a simple recurrent unit (SRU) and a minimal gated unit (MGU), is developed to capture the nonlinear dynamics of the process data. A dynamic sparse self-attention (DSSA) mechanism is further incorporated to extract latent features from the multivariate process inputs. Finally, a kolmogorov–arnold network (KAN) module is employed to enhance the accuracy and robustness of diameter prediction. The proposed GADKN model is validated using real-world data from the silicon crystal growth process, demonstrating superior predictive performance and practical applicability.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"668 ","pages":"Article 128292"},"PeriodicalIF":1.7,"publicationDate":"2025-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144572293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The stability of radially growing cylindrical crystals in a binary alloy melt 二元合金熔体中径向生长圆柱形晶体的稳定性

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-07-05 DOI: 10.1016/j.jcrysgro.2025.128291

Mingwen Chen , Jingxuan Zhang , Mingli Zhang , Zidong Wang

{"title":"The stability of radially growing cylindrical crystals in a binary alloy melt","authors":"Mingwen Chen , Jingxuan Zhang , Mingli Zhang , Zidong Wang","doi":"10.1016/j.jcrysgro.2025.128291","DOIUrl":"10.1016/j.jcrysgro.2025.128291","url":null,"abstract":"<div><div>The radial growth and morphological stability of growing cylindrical crystals in a binary alloy melt are investigated using the asymptotic method. The resulting asymptotic solution to the model of the radially growing cylindrical crystal shows the interfacial morphology and velocity of the radially growing cylindrical crystal. The absolute and relative stability criteria of the radially growing cylindrical crystal in the binary alloy melt are established and the critical stability radii for the absolute and relative stability criteria of the radially growing cylindrical crystal are determined. The stability analysis reveals that the radially growing cylindrical crystal is not stable above and is stable below a certain critical stability radius. The ratio of the critical stability radius to the critical nucleation radius derived from nucleation theory is a determined constant, analogous to the morphological stability of particles as described in the work of Mullins and Sekerka. It is found that for segregation coefficients less than unity, there is a minimum solute concentration required for critical stability in the binary alloy melt. When the initial concentration is below this minimum solute concentration, the stability of the radially growing cylindrical crystal decreases with increasing the initial concentration in the melt. Conversely, when the initial concentration is above this minimum solute concentration, the stability of the radially growing cylindrical crystal increases with increasing the initial concentration. Furthermore, as the initial concentration increases, the critical stability radius initially decreases to a minimum at the minimum critical stability concentration required for absolute and relative critical stability, then increases with the initial concentration. The morphological stability of the radially growing cylindrical crystal can be controlled through solute addition in the alloy melt.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"668 ","pages":"Article 128291"},"PeriodicalIF":1.7,"publicationDate":"2025-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144605077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Oxygen plasma-assisted pulsed laser deposition of terbium doped Ga2O3 films 氧等离子体辅助脉冲激光沉积掺铽Ga2O3薄膜

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-07-01 DOI: 10.1016/j.jcrysgro.2025.128290

Qixin Guo, Yuki Kawano, Kento Imari, Katsuhiko Saito, Tooru Tanaka

{"title":"Oxygen plasma-assisted pulsed laser deposition of terbium doped Ga2O3 films","authors":"Qixin Guo, Yuki Kawano, Kento Imari, Katsuhiko Saito, Tooru Tanaka","doi":"10.1016/j.jcrysgro.2025.128290","DOIUrl":"10.1016/j.jcrysgro.2025.128290","url":null,"abstract":"<div><div>This study presents the growth of terbium (Tb) doped Ga<sub>2</sub>O<sub>3</sub> films using oxygen plasma-assisted pulsed laser deposition (PLD). The effects of substrate temperatures, varied from 100 ℃ to 500 ℃, on the structural and optical properties of the films were systematically investigated. X-ray diffraction analysis revealed that the use of oxygen plasma significantly enhances the crystalline quality of (−201)-oriented Ga<sub>2</sub>O<sub>3</sub> films compared to those grown by conventional PLD without plasma assistance. Notably, the incorporation of oxygen plasma enabled the formation of crystalline Tb doped Ga<sub>2</sub>O<sub>3</sub> at a reduced substrate temperature of 300 °C, ensured more stable growth rates, and enhanced both optical and luminescent properties. These results highlight the potential of plasma-assisted PLD as a viable approach for fabricating high-quality Ga<sub>2</sub>O<sub>3</sub> films at low temperatures, paving the way for advanced electronic and optoelectronic devices compatible with conventional Si-based integrated circuits.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"668 ","pages":"Article 128290"},"PeriodicalIF":1.7,"publicationDate":"2025-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144523458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of substrate pretreatment on the epitaxial growth of κ-Ga2O3 layers on sapphire by halide vapor phase epitaxy 衬底预处理对蓝宝石卤化物气相外延中κ-Ga2O3层外延生长的影响

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-06-30 DOI: 10.1016/j.jcrysgro.2025.128289

Galia Pozina, Chih-Wei Hsu, Natalia Abrikossova, Carl Hemmingsson

{"title":"Effect of substrate pretreatment on the epitaxial growth of κ-Ga2O3 layers on sapphire by halide vapor phase epitaxy","authors":"Galia Pozina, Chih-Wei Hsu, Natalia Abrikossova, Carl Hemmingsson","doi":"10.1016/j.jcrysgro.2025.128289","DOIUrl":"10.1016/j.jcrysgro.2025.128289","url":null,"abstract":"<div><div>Ultra-wide band gap semiconductor Ga<sub>2</sub>O<sub>3</sub> emerges as a promising material for next generation high-power devices. Metastable α- and κ-phases of Ga<sub>2</sub>O<sub>3</sub> are obtained by halide vapor phase epitaxy (HVPE) on sapphire (0001) substrates at a growth temperature of 575 °C. Substrate annealing at 1000 °C in a hydrogen or oxygen atmosphere prior to growth is critical for achieving single-crystal κ-Ga<sub>2</sub>O<sub>3</sub> layers, as HVPE on untreated substrates results in the formation of single-crystal α-Ga<sub>2</sub>O<sub>3</sub>, as confirmed by X-ray diffraction measurements. The impact of substrate pretreatment on layer quality and phase transformation is further investigated across growth temperatures ranging from 670 °C to 970 °C. The results demonstrate that pretreatment of sapphire substrates in oxygen or hydrogen facilitates the synthesis of single crystal κ-Ga<sub>2</sub>O<sub>3</sub>, while it is unfavorable for the formation of β-phase. Cathodoluminescence measurements reveal that the κ-phase exhibits notable emission differences, with a peak maximum around ∼ 550 nm, compared to the β-phase and α-phase, which exhibit maximum emissions at ∼ 370 nm and 414 nm, respectively. Absorption measurements yield optical band gap values of ∼ 5.12 eV for the α-phase and ∼ 4.68 eV for the κ-phase. These findings provide valuable insights into controlling metastable phase synthesis in HVPE growth on sapphire.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"668 ","pages":"Article 128289"},"PeriodicalIF":1.7,"publicationDate":"2025-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144516951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synthesis and characterization of β-Ga2O3 nanowires on 4H-SiC substrates via Au-catalyzed low-pressure chemical vapor deposition 金催化低压化学气相沉积在4H-SiC衬底上合成β-Ga2O3纳米线及表征

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-06-27 DOI: 10.1016/j.jcrysgro.2025.128287

Jichao Hu , Qi Zhang , Yao Li , Bei Xu , Bo Peng , Linpeng Dong , Lei Yuan , Yuan Yang , Xiaomin He

引用次数: 0