Mild-Condition synthesis of BiSCl microcrystals and its application as a cantilever Sensor for mechanical vibration sensing

IF 2 4区 材料科学 Q3 CRYSTALLOGRAPHY
Jakub Jała , Tushar Kanti Das , Bartłomiej Nowacki , Bartłomiej Toroń , Krystian Mistewicz , Mirosława Kępińska , Klaudia Kurtyka , Marcin Godzierz
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引用次数: 0

Abstract

A simple and reliable method for synthesizing the ternary chalcohalide bismuth sulfochloride (BiSCl) microcrystals has been developed. The proposed method utilizes mild solvents and temperatures up to 180 °C, achieving BiSCl synthesis within seven hours without requiring an autoclave or specialized equipment. The resulting crystals, characterized by scanning electron microscopy (SEM), exhibit an elongated rectangular morphology with sizes ranging from micrometers to sub-micrometers. X-ray diffraction (XRD) confirms the predominance of the BiSCl Pnam phase. Optical properties were investigated using UV–Vis spectroscopy, with diffuse reflectance spectroscopy (DRS) determining an indirect forbidden band gap of 1.71 eV and a direct allowed band gap of 2.04 eV. A flexible (3–3) mode cantilever device was fabricated via drop-casting and tested under ambient conditions using a magnetic shaker in the 5–200 Hz frequency range. The results demonstrate the potential of BiSCl for vibration sensing, showing a voltage response in the millivolt range.
BiSCl微晶体的温和条件合成及其作为悬臂式机械振动传感器的应用
本文提出了一种简单可靠的合成三元硫氯化铋(BiSCl)微晶的方法。所提出的方法利用温和的溶剂和温度高达180°C,在7小时内实现BiSCl合成,而不需要高压灭菌器或专门的设备。所得晶体,通过扫描电子显微镜(SEM)表征,表现出细长的矩形形态,尺寸范围从微米到亚微米。x射线衍射(XRD)证实了BiSCl Pnam相的优势。利用紫外可见光谱对其光学性质进行了研究,漫反射光谱(DRS)确定了间接禁带隙为1.71 eV,直接允许带隙为2.04 eV。采用滴铸法制备了一个柔性(3-3)模悬臂装置,并在环境条件下使用5 - 200hz频率范围内的磁激振器进行了测试。结果表明BiSCl在振动传感方面的潜力,显示出毫伏范围内的电压响应。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Crystal Growth
Journal of Crystal Growth 化学-晶体学
CiteScore
3.60
自引率
11.10%
发文量
373
审稿时长
65 days
期刊介绍: The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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