Journal of Crystal Growth最新文献_第3页

The growth of void-free ZnTe-based crystals from Te solution by re-dissolution procedure 用再溶解法在Te溶液中生长无空洞的znte基晶体

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-04-30 DOI: 10.1016/j.jcrysgro.2025.128219

Guanrong Zhu, Tingting Zhang, Xiaoxiao Wei, Guorong Zhang, Leilei Ji, Jiahui Lv, Zeyu Lu, Yuchen Song, Hao Lei, Changyou Liu, Tao Wang, Lingyan Xu, Wanqi Jie

{"title":"The growth of void-free ZnTe-based crystals from Te solution by re-dissolution procedure","authors":"Guanrong Zhu, Tingting Zhang, Xiaoxiao Wei, Guorong Zhang, Leilei Ji, Jiahui Lv, Zeyu Lu, Yuchen Song, Hao Lei, Changyou Liu, Tao Wang, Lingyan Xu, Wanqi Jie","doi":"10.1016/j.jcrysgro.2025.128219","DOIUrl":"10.1016/j.jcrysgro.2025.128219","url":null,"abstract":"<div><div>Void defects are prevalent in ZnTe-based crystals and detrimentally impact their properties. This research aims to elucidate the composition and formation mechanism of the voids. In this experiment, ZnTe crystals were grown by the Te solution method. Energy dispersive spectroscopy (EDS) results demonstrate that the C, Te and Zn elements are distributed on the void surfaces. X-ray photoelectron spectroscopy (XPS) results indicate that the C element mainly exists as zero valence. These results suggest that the carbon film coated on the surface of the quartz crucible must be implicated in the bubble formation. Carbon film possibly reacts with the Te solution to produce a kind of CTe<sub>n</sub> gas, which then dissolves into the Te solution. When the temperature decreases, the solubility of the gases diminishes, leading to the bubbles nucleate at the solid–liquid interface or within the Te solution, and further grow. When a bubble is wrapped by the solid–liquid interface, it evolves into a void in the crystal. To eliminate void in ZnTe-based crystals, the low–high temperature cycle procedure was developed to re-dissolve the crystals near the interface and released void, during the crystal growth. Fourier transform infrared spectrometer (FTIR) spectrum demonstrates that the optical properties of the ZnTe-based crystals grown by the re-dissolution procedure are improved significantly.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"665 ","pages":"Article 128219"},"PeriodicalIF":1.7,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143890878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Fast adsorption combined with Z-scheme charge migration in ZIF-8/CeO2 enables efficient photocatalytic performance ZIF-8/CeO2的快速吸附结合Z-scheme电荷迁移实现了高效的光催化性能

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-04-29 DOI: 10.1016/j.jcrysgro.2025.128217

Haiqin Bian, XuMing Zhang, Wei Wei, ZhengYu OuYang, Jiangying wang, Zhengmei Zhang, Tao Wang

{"title":"Fast adsorption combined with Z-scheme charge migration in ZIF-8/CeO2 enables efficient photocatalytic performance","authors":"Haiqin Bian, XuMing Zhang, Wei Wei, ZhengYu OuYang, Jiangying wang, Zhengmei Zhang, Tao Wang","doi":"10.1016/j.jcrysgro.2025.128217","DOIUrl":"10.1016/j.jcrysgro.2025.128217","url":null,"abstract":"<div><div>Constructing a heterostructure is a key factor in effectively enhancing photocatalytic activity. In this paper, CeO<sub>2</sub> was tightly anchored on the surface of ZIF-8 through a simple co-precipitation method, successfully constructing a Z-scheme heterostructure and accelerating the separation of photogenerated carriers. The photocatalytic activity was evaluated by eliminating RhB and MB with the assistance of visible light. The results showed that the optimized ZC2 exhibited better photocatalytic degradation ability than pure ZIF-8 and CeO<sub>2</sub>, with a degradation rate of 92.8 % and 85.38 % for RhB for MB within 90 min. The improvement of the photocatalytic ability of the ZC series is due to constructing a Z-scheme heterostructure between ZIF-8 and CeO<sub>2</sub>, resulting in effectively reduced interface impedance and increased the separation of photogenerated electron-hole pairs and improving the electron utilization rate. Moreover, the increase in the specific surface area of the composite material provides more active sites for reactants and more possibilities for degrading organic pollutants. The coexistence of multiple free radicals was proved by free radical trapping experiments to achieve efficient degradation of pollutants. In addition, this paper will discuss in detail the transfer of photogenerated carriers and the possible photocatalytic mechanism.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"665 ","pages":"Article 128217"},"PeriodicalIF":1.7,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143895702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Selective growth and characterization of GaN nanowires on SiC substrates SiC衬底上GaN纳米线的选择性生长和表征

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-04-28 DOI: 10.1016/j.jcrysgro.2025.128194

Theresa Höldrich , Andrea Wieland , Florian Pantle , Julia Winnerl , Martin Stutzmann

{"title":"Selective growth and characterization of GaN nanowires on SiC substrates","authors":"Theresa Höldrich , Andrea Wieland , Florian Pantle , Julia Winnerl , Martin Stutzmann","doi":"10.1016/j.jcrysgro.2025.128194","DOIUrl":"10.1016/j.jcrysgro.2025.128194","url":null,"abstract":"<div><div>GaN on SiC is a promising material combination for high power devices, where especially nanostructures, such as nanowires or nanofins, are a space and resource saving solution. In this work we demonstrate the selective area growth of GaN nanowires on SiC substrates, using the polytype 6H-SiC. We investigate the influence of the Si- and C-polarity of the substrate on the structural properties of the GaN nanowires by scanning electron microscopy and photoluminescence spectroscopy. On both substrates uniform and hexagonal nanowires are achieved for the respective optimal growth temperature, which is determined to be 20<!--> <sup>$circ $</sup>C higher for Si-polarity. As the polarity combination of the SiC substrate and GaN nanowires strongly influences the electrical properties at the heterointerface due to different charge accumulations, it is necessary to investigate the epitaxial relationship. X-ray diffraction revealed that the GaN nanowires exclusively adopt the orientation of the underlying SiC lattice, leading to an in-plane epitaxial relationship of (1<span><math><mover><mrow><mn>1</mn></mrow><mo>¯</mo></mover></math></span>00)GaN/(1<span><math><mover><mrow><mn>1</mn></mrow><mo>¯</mo></mover></math></span>00)6H-SiC. Polarity-selective wet chemical etching and Kelvin probe force microscopy showed that the GaN nanowires preserve the polarity of the substrate, thus, either a predominantly metal-polar (Si-polar/Ga-polar) or non-metal-polar (C-polar/N-polar) orientation is present. The complete epitaxial relationship on both substrate polarities can be identified as (1<span><math><mover><mrow><mn>1</mn></mrow><mo>¯</mo></mover></math></span>00)[0001]GaN<span><math><mrow><mo>|</mo><mo>|</mo></mrow></math></span>(1<span><math><mover><mrow><mn>1</mn></mrow><mo>¯</mo></mover></math></span>00)[0001]6H-SiC for the large majority of NWs at their respective optimum growth temperatures.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"665 ","pages":"Article 128194"},"PeriodicalIF":1.7,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143898390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Effects of Sc3+ and Y3+ codoping on luminescence and scintillation properties of LaBr3:Ce single crystals Sc3+和Y3+共掺杂对LaBr3:Ce单晶发光和闪烁性能的影响

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-04-25 DOI: 10.1016/j.jcrysgro.2025.128207

Lei Zong , Qian Wang , Yuhao Zhang , Lixi Wang , Yuntao Wu

引用次数: 0

Czochralski growth and composition control of Tb3Ga5O12 single crystals Tb3Ga5O12单晶的Czochralski生长及成分控制

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-04-21 DOI: 10.1016/j.jcrysgro.2025.128205

Miki Watanabe , Yuki Maruyama , Katsuhiko Nagao , Yutaka Anzai , Masanori Nagao , Satoshi Watauchi , Isao Tanaka

{"title":"Czochralski growth and composition control of Tb3Ga5O12 single crystals","authors":"Miki Watanabe , Yuki Maruyama , Katsuhiko Nagao , Yutaka Anzai , Masanori Nagao , Satoshi Watauchi , Isao Tanaka","doi":"10.1016/j.jcrysgro.2025.128205","DOIUrl":"10.1016/j.jcrysgro.2025.128205","url":null,"abstract":"<div><div>Tb<sub>3</sub>Ga<sub>5</sub>O<sub>12</sub> (TGG) single crystals have excellent optical isolator characteristics. However, TGG single crystals grown by the Czochralski method sometimes contain radial stripes along the growth direction, which degrade their optical isolator characteristics. These radial stripes may be caused by a composition mismatch between the melt and crystals. In this study, we grew 25 mmϕ TGG single crystals from Tb-rich melts and precisely measured their lattice constants. The relationship between the composition and lattice constants was determined using sintered polycrystalline TGG. Based on these experiments, the congruent-melting composition was found to be 37.9 mol% Tb<sub>2</sub>O<sub>3</sub>. High-quality, 50-mmϕ TGG single crystals without radial stripes were grown using a starting material composition of 37.8 mol% Tb<sub>2</sub>O<sub>3</sub>, considering the evaporation of Ga<sub>2</sub>O<sub>3</sub> from the melt during crystal growth. We repeatedly grew TGG single crystals by adding the TGG starting material to the residue in the crucible used for growth to complete four additional growth processes. The fluctuation of in the lattice constant of the TGG boules for the first and fifth growths was within 0.0002 Å, which corresponds to a Tb<sub>2</sub>O<sub>3</sub> composition uniformity of 0.01 mol% Tb<sub>2</sub>O<sub>3</sub>. Therefore, we have succeeded in growing uniform TGG single crystals industrially with composition fluctuations within only 0.01 mol% by optimizing the composition of the TGG starting material to 37.8 mol% Tb<sub>2</sub>O<sub>3</sub>.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"665 ","pages":"Article 128205"},"PeriodicalIF":1.7,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143890876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Large scale epitaxy of AlGaN/GaN heterojunction films on h-BN/4H-SiC templates 在h-BN/4H-SiC模板上大规模外延AlGaN/GaN异质结薄膜

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-04-17 DOI: 10.1016/j.jcrysgro.2025.128195

Daqing Peng , Chuanhao Li , Qiankun Yang , Kechao Wang , Liangbing Ge , Dongguo Zhang , Weike Luo , Zhonghui Li

引用次数: 0

Design and development of transparent vertical Bridgman system and growth of high quality 4-Chloro-3-Nitrobenzophenone single crystal for nonlinear optical applications 透明垂直布里奇曼系统的设计与开发以及用于非线性光学应用的高质量 4-氯-3-硝基二苯甲酮单晶的生长

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-04-15 DOI: 10.1016/j.jcrysgro.2025.128198

Jithin Kuriakose, P. Karuppasamy, P. Ramasamy

{"title":"Design and development of transparent vertical Bridgman system and growth of high quality 4-Chloro-3-Nitrobenzophenone single crystal for nonlinear optical applications","authors":"Jithin Kuriakose, P. Karuppasamy, P. Ramasamy","doi":"10.1016/j.jcrysgro.2025.128198","DOIUrl":"10.1016/j.jcrysgro.2025.128198","url":null,"abstract":"<div><div>The development and examination of nonlinear optical (NLO) single crystals have garnered considerable attention owing to their prospective uses in optoelectronics and photonics. This study successfully grew 4-Chloro-3-nitrobenzophenone (4C3N) single crystals using an indigenously developed Vertical Bridgman method for nonlinear optical applications. This technique guarantees superior crystal quality, consistency, and a substantial defect-free volume, which is critical for optical applications. Notably, we have grown high-quality, bulk-sized crystals with significantly higher transmittance compared to previously reported data. The structural, optical, and thermal characteristics of the 4C3N crystals were analysed using X-ray diffraction (XRD), UV–Vis spectroscopy, and thermogravimetric analysis. UV–visible-NIR spectroscopy revealed a transmittance exceeding 83 % in the visible region, with a cut-off wavelength at 418 nm corresponding to an optical band gap energy of about 2.9 eV. Photoluminescence analysis was performed to evaluate the emission properties of the grown crystal, showing a prominent peak at 585 nm. The thermal stability of the 4C3N crystal was examined using TGA-DTA analysis, which determined its melting temperature to be 113 °C. Photocurrent measurements indicated strong photoconductive properties. Additionally, the Z-scan technique was used to measure third-order nonlinear optical properties, giving a value of 1.389 × 10<sup>–9</sup> esu. Thus, the grown 4C3N crystal shows significant potential for nonlinear optical applications.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"663 ","pages":"Article 128198"},"PeriodicalIF":1.7,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143847861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Characterization of THM CdZnTe for nuclear radiation detection THM CdZnTe用于核辐射检测的表征

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-04-14 DOI: 10.1016/j.jcrysgro.2025.128196

Song Zhang , Hui Zhang

引用次数: 0

Chemical vapour deposition of copper(I) iodide on c-plane sapphire using ethyl iodide and 2-iodo-2-methylpropane 用碘乙基和2-碘-2-甲基丙烷在c平面蓝宝石上化学气相沉积碘化铜

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-04-14 DOI: 10.1016/j.jcrysgro.2025.128179

Stefan Jens Merker , Valeria Zittel , Gabriele Benndorf , Marius Grundmann , Harald Krautscheid

{"title":"Chemical vapour deposition of copper(I) iodide on c-plane sapphire using ethyl iodide and 2-iodo-2-methylpropane","authors":"Stefan Jens Merker , Valeria Zittel , Gabriele Benndorf , Marius Grundmann , Harald Krautscheid","doi":"10.1016/j.jcrysgro.2025.128179","DOIUrl":"10.1016/j.jcrysgro.2025.128179","url":null,"abstract":"<div><div>In this paper, we report the deposition of copper(I) iodide (CuI) on c-plane sapphire by chemical vapour deposition (CVD). Single crystals of <span><math><mi>γ</mi></math></span>-CuI with an out-of-plane orientation of 111, as determined by X-ray diffraction, were grown on the substrate. The copper precursor used was bis(N,N’-di-<em>sec</em>-butylacetamidinato) dicopper(I). Two different iodine precursors, ethyl iodide (EtI) and 2-iodo-2-methylpropane (<sup><em>t</em></sup>BuI), are discussed in detail. X-ray diffraction and laser scanning microscopy images show the influence of precursor and growth conditions on the morphology and growth rate of CuI. Using <sup><em>t</em></sup>BuI the growth temperature could be lowered and the formation of crystals with flat hexagonal and trigonal shape could be observed. At growth temperatures T<sub>growth</sub> <span><math><mo>≤</mo></math></span> 230 °C, another CuI phase in addition to <span><math><mi>γ</mi></math></span>-CuI is observed by X-ray diffraction. Photoluminescence measurements show a sharp peak at 380 nm (3.26 eV) that can be assigned to bound excitons of the other CuI phase.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"663 ","pages":"Article 128179"},"PeriodicalIF":1.7,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143847860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Revealing the mixed-mode precipitation kinetics of γ′ with a modified Kampmann–Wagner numerical (KWN) model 用改进的坎普曼-瓦格纳数值（KWN）模型揭示γ′的混合模式沉淀动力学

IF 1.7 4区材料科学

Journal of Crystal Growth Pub Date : 2025-04-12 DOI: 10.1016/j.jcrysgro.2025.128175

Yue Li , Zhijun Wang , Xianghan Gao , Junjie Li , Jincheng Wang , Ke-gang Wang

{"title":"Revealing the mixed-mode precipitation kinetics of γ′ with a modified Kampmann–Wagner numerical (KWN) model","authors":"Yue Li , Zhijun Wang , Xianghan Gao , Junjie Li , Jincheng Wang , Ke-gang Wang","doi":"10.1016/j.jcrysgro.2025.128175","DOIUrl":"10.1016/j.jcrysgro.2025.128175","url":null,"abstract":"<div><div>The precipitation kinetics of <span><math><msup><mrow><mi>γ</mi></mrow><mrow><mo>′</mo></mrow></msup></math></span> particles in solid-state has long been a topic of scientific and industrial interest due to their significant impact on the mechanical properties of Ni-based superalloys. Although numerous studies over the past decades have sought to understand the coarsening mechanism of <span><math><msup><mrow><mi>γ</mi></mrow><mrow><mo>′</mo></mrow></msup></math></span> precipitates, there remains a long-standing debate regarding the dominant mass transport mechanism-whether it is interface-controlled or matrix diffusion-controlled. A key challenge is that analytical theories of coarsening are only valid in the long-time regime, which is difficult to achieve experimentally. To address this, we have developed a modified Kampmann–Wagner numerical (KWN) model that incorporates both mass transport mechanisms. Using this precipitation model, we revisited experimental data from various Ni-Al model alloys at 823K and 1073K to clarify the dominant mass transport mechanisms from nucleation to coarsening. Our study demonstrates that a single mass transport mechanism cannot adequately reproduce the entire set of precipitation data. Specifically, the matrix diffusion mechanism aligns more closely with the early nucleation and growth stages but fails to account for the anomalous effect of increasing volume fraction on the coarsening rate. Conversely, while the interface-controlled mechanism fits the coarsening data better, it does not accurately represent the early nucleation and growth stages. These comparative results highlight the existence of a mixed-mode character throughout the entire precipitation process of <span><math><msup><mrow><mi>γ</mi></mrow><mrow><mo>′</mo></mrow></msup></math></span> particles, which is numerically captured by our modified KWN model.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"663 ","pages":"Article 128175"},"PeriodicalIF":1.7,"publicationDate":"2025-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143851812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0