Journal of Crystal Growth最新文献_第3页

Thermal stabilization of porous silicon: A key step for high-quality SiGe epitaxy 多孔硅的热稳定：高质量SiGe外延的关键步骤

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2025-09-12 DOI: 10.1016/j.jcrysgro.2025.128342

Mohammed Ibrahim , Mansour Aouassa , Saud A. Algarni , A.K. Aladim , Maha A. Alenizi , K.M.A. Saron , Mohammed Bouabdellaoui , Isabelle Berbezier

{"title":"Thermal stabilization of porous silicon: A key step for high-quality SiGe epitaxy","authors":"Mohammed Ibrahim , Mansour Aouassa , Saud A. Algarni , A.K. Aladim , Maha A. Alenizi , K.M.A. Saron , Mohammed Bouabdellaoui , Isabelle Berbezier","doi":"10.1016/j.jcrysgro.2025.128342","DOIUrl":"10.1016/j.jcrysgro.2025.128342","url":null,"abstract":"<div><div>This study focuses on the epitaxial growth of virtual silicon–germanium (SiGe) substrates on porous silicon (PSi). Epitaxy was performed on different types of PSi substrates, with or without prior thermal annealing. Morphological and structural investigations by atomic force microscopy (AFM), transmission electron microscopy (TEM) and X-ray diffraction (XRD) show that epitaxial SiGe films grown on double-layer PSi substrates, annealed at 1100 °C, exhibit significantly higher crystalline quality than those grown on unannealed PSi substrates or PSi substrates annealed at temperatures lower than or equal to 900 °C. This improvement is attributed to the beneficial effects of 1100 °C annealing, which leads to stress relaxation, internal microstructure stabilization and significant improvement of PSi surface morphology. In contrast, direct growth of SiGe on unannealed PSi, even at moderate temperature (∼400 °C), induces structural degradation of the porous buffer, leading to a very high dislocation density in the epitaxially grown SiGe films. A well-optimized thermal treatment of PSi substrates promotes the growth of high-quality virtual SiGe substrates on PSi that is both efficient and economically viable for the development of SiGe-based photovoltaic cells and microelectronic devices.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"670 ","pages":"Article 128342"},"PeriodicalIF":2.0,"publicationDate":"2025-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145097004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Phase tunable synthesis of Cu2–xS nanocrystals and their cation substitution reactions Cu2-xS纳米晶的相位可调合成及其阳离子取代反应

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2025-09-10 DOI: 10.1016/j.jcrysgro.2025.128341

Jian Guo , Linchao Tan , Yedong Shi , Shaobo He , Xinxin Zhang , Lihui Chen

{"title":"Phase tunable synthesis of Cu2–xS nanocrystals and their cation substitution reactions","authors":"Jian Guo , Linchao Tan , Yedong Shi , Shaobo He , Xinxin Zhang , Lihui Chen","doi":"10.1016/j.jcrysgro.2025.128341","DOIUrl":"10.1016/j.jcrysgro.2025.128341","url":null,"abstract":"<div><div>Cation substitution (CS) reactions utilization of Cu<sub>2–</sub><em><sub>x</sub></em>S nanocrystals (NCs) have been emerged as a powerful postsynthetic method to produce complicated nanostructures and metastable phases. For these CS reactions, it is of great importance to tune the crystal phase of the Cu<sub>2–</sub><em><sub>x</sub></em>S NCs since it strongly affects the reaction kinetics, thermodynamics, reaction intermediates, and final products. Herein, hexagonal phase djurleite Cu<sub>1.94</sub>S NCs and cubic phase digenite Cu<sub>1.8</sub>S NCs were synthesized by simple tuning of the amount of thiourea (TU). In particular, 0.5 mmol of TU is responsible for the formation of the djurleite Cu<sub>1.94</sub>S NCs, while 5.0 mmol of TU is responsible for the formation of the digenite Cu<sub>1.8</sub>S NCs. Afterward, the Cu<sub>1.94</sub>S and digenite Cu<sub>1.8</sub>S NCs were substituted by Zn<sup>2+</sup> and Cd<sup>2+</sup>, and hexagonal phase wurtzite ZnS and CdS NCs, cubic phase zincblende ZnS and CdS NCs were produced. These ZnS and CdS NCs are otherwise difficult to access without the CS method. Therefore, our findings in the present study provide a straightforward phase tuning of the Cu<sub>2–</sub><em><sub>x</sub></em>S NCs, and potential guidelines for creating more complicated metal sulfide nano(hetero)structures.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"670 ","pages":"Article 128341"},"PeriodicalIF":2.0,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145044824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Crystallinity and defect reduction in Cs2AgBiBr6: Key factors for enhanced optoelectronic devices Cs2AgBiBr6的结晶度和缺陷减少：增强光电器件的关键因素

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2025-09-05 DOI: 10.1016/j.jcrysgro.2025.128331

Fahad K. Alshammari , Achref Jebnouni , Mohamed Bouzidi , Sana Ben Khalifa , Mohamed Ben Bechir

{"title":"Crystallinity and defect reduction in Cs2AgBiBr6: Key factors for enhanced optoelectronic devices","authors":"Fahad K. Alshammari , Achref Jebnouni , Mohamed Bouzidi , Sana Ben Khalifa , Mohamed Ben Bechir","doi":"10.1016/j.jcrysgro.2025.128331","DOIUrl":"10.1016/j.jcrysgro.2025.128331","url":null,"abstract":"<div><div>Cs<sub>2</sub>AgBiBr<sub>6</sub> double perovskites have attracted considerable interest for optoelectronic applications owing to their favorable structural stability and nontoxic composition. In this study, we systematically investigate the influence of two crystal growth methods—Single Crystal Growth (SCG) and Seed-Assisted Growth (SAG)—on the morphology, crystallinity, defect landscape, and optoelectronic properties of Cs<sub>2</sub>AgBiBr<sub>6</sub> single crystals. Comprehensive characterization using scanning electron microscopy (SEM), X-ray diffraction (XRD), photoluminescence (PL), time-resolved photoluminescence (TRPL), impedance spectroscopy, and current–voltage (I–V) measurements reveals that the SAG method yields significantly larger and more uniform grains, improved structural coherence, and reduced defect densities compared to the SCG route. The narrower XRD peaks and reduced lattice strain in SAG-grown crystals confirm their higher crystallinity, while TRPL analysis shows extended carrier lifetimes, indicating suppressed nonradiative recombination due to fewer trap states. These structural and optical improvements directly enhance device performance, as SAG-grown crystals exhibit a 2.5-fold increase in photocurrent and a markedly lower dark current in photodetector configurations. Our findings establish the SAG technique as a superior and scalable approach for producing high-quality Cs<sub>2</sub>AgBiBr<sub>6</sub> crystals, positioning them as promising candidates for next-generation optoelectronic devices, including photodetectors and light-emitting components.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"670 ","pages":"Article 128331"},"PeriodicalIF":2.0,"publicationDate":"2025-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145044880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermodynamical analysis of polytype stability during top-seeded solution growth of SiC using 2D nucleation theory 基于二维成核理论的SiC顶种溶液生长多型稳定性热力学分析

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2025-09-05 DOI: 10.1016/j.jcrysgro.2025.128332

Koichi Kakimoto , Satoshi Nakano

引用次数: 0

Influence of Indium and Arsenic composition on structural properties of InGaAsSb/AlGaAsSb multi-quantum wells grown by molecular beam epitaxy 铟和砷组成对分子束外延生长InGaAsSb/AlGaAsSb多量子阱结构特性的影响

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2025-09-03 DOI: 10.1016/j.jcrysgro.2025.128330

Ayşe Aygül Ergürhan , Burcu Arpapay , Sabahattin Erinç Erenoğlu , Mustafa Kulakcı , Behçet Özgür Alaydin , Didem Altun , Uğur Serincan

{"title":"Influence of Indium and Arsenic composition on structural properties of InGaAsSb/AlGaAsSb multi-quantum wells grown by molecular beam epitaxy","authors":"Ayşe Aygül Ergürhan , Burcu Arpapay , Sabahattin Erinç Erenoğlu , Mustafa Kulakcı , Behçet Özgür Alaydin , Didem Altun , Uğur Serincan","doi":"10.1016/j.jcrysgro.2025.128330","DOIUrl":"10.1016/j.jcrysgro.2025.128330","url":null,"abstract":"<div><div>InGaAsSb/AlGaAsSb multiple quantum well (MQW) structures, with their narrow band gap quaternary compositions, are well suited for devices operating in the 2–3 µm mid-infrared spectral region. In this study, to investigate the effects of compositional variation on structural properties, twenty-period MQW structures were grown by molecular beam epitaxy on (100) GaSb substrates. It was demonstrated that varying the In and As concentrations while keeping the V/III beam equivalent pressure ratio constant significantly influenced the surface morphology due to defect formation. It was found that in the samples with In concentrations ranging from 30 to 44%, low As content resulted in an increase in the number of surface defects. However, a smooth, defect-free surface and improved crystal quality were achieved at 44% In content when the As concentration in the QWs was 14% or higher. These results highlight the importance of precise compositional tuning for achieving high structural quality in mid-infrared MQW devices.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"670 ","pages":"Article 128330"},"PeriodicalIF":2.0,"publicationDate":"2025-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144997669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study on the effect of deuterium effect on the morphology of magnesium carbonate whiskers 氘效应对碳酸镁晶须形貌影响的研究

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2025-09-03 DOI: 10.1016/j.jcrysgro.2025.128329

Tianbo Fan , Liqiang Jiao , Qiutong Li , Hongyu Zhao , Yihui Qu , Hongfan Guo , Xue Li , Li Li , Cong Li , Shijie Wang

{"title":"Study on the effect of deuterium effect on the morphology of magnesium carbonate whiskers","authors":"Tianbo Fan , Liqiang Jiao , Qiutong Li , Hongyu Zhao , Yihui Qu , Hongfan Guo , Xue Li , Li Li , Cong Li , Shijie Wang","doi":"10.1016/j.jcrysgro.2025.128329","DOIUrl":"10.1016/j.jcrysgro.2025.128329","url":null,"abstract":"<div><div>It is proposed that perturbations of several tens of ppm in the deuterium content of normal water may exert measurable influences on certain physical or chemical properties during aqueous-phase processes, a phenomenon termed the “deuterium effect”. Magnesium carbonate trihydrate whiskers (MgCO<sub>3</sub>·3H<sub>2</sub>O) were synthesized by the co-precipitation method using magnesium chloride and sodium carbonate solutions prepared with water containing 40–165 ppm deuterium at 30–70 °C, and the influence of the deuterium effect on product morphology was investigated. The products were characterized using XRD and SEM. The solubility during the reaction process was determined by titration. The results indicate that changes in deuterium content lead to significant variations in crystal morphology, transforming from predominantly hexagonal prisms to mainly tetragonal prisms with inclusions of irregular hexagonal prism structures. At the same temperature, the solubility of magnesium chloride and calcium carbonate in water with different deuterium contents varies by up to 22.24 % and 17.91 %, respectively, demonstrating the significant impact of the deuterium effect on water activity and crystallization products. Theoretical calculations using the Morphology and CASTEP modules revealed that a reduction in deuterium content causes the dominant exposed facet of MgCO<sub>3</sub>·3H<sub>2</sub>O to gradually change from the (212) plane to the (301) plane, leading to a transformation of the crystals from hexagonal to tetragonal prisms. The p orbital governs the stability of surface structures, and variations in deuterium content activate the density of states of the (212) plane, resulting in morphological changes. The theoretical results are consistent with the experimental observations.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"669 ","pages":"Article 128329"},"PeriodicalIF":2.0,"publicationDate":"2025-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144997392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of pulse time control on the structural growth characteristics and optical properties of Ga2O3 thin films prepared by thermal atomic layer deposition (T-ALD) 脉冲时间控制对热原子层沉积（T-ALD）制备Ga2O3薄膜结构生长特性和光学性能的影响

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2025-08-31 DOI: 10.1016/j.jcrysgro.2025.128321

Ziyu Yang , Jianghai He , Chufeng Hou , Zihua Ma , Shihao Xia , Qi Liu , Qiang Wang , Yuefei Zhang , Fei Chen

{"title":"Effect of pulse time control on the structural growth characteristics and optical properties of Ga2O3 thin films prepared by thermal atomic layer deposition (T-ALD)","authors":"Ziyu Yang , Jianghai He , Chufeng Hou , Zihua Ma , Shihao Xia , Qi Liu , Qiang Wang , Yuefei Zhang , Fei Chen","doi":"10.1016/j.jcrysgro.2025.128321","DOIUrl":"10.1016/j.jcrysgro.2025.128321","url":null,"abstract":"<div><div>The synthesis of gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) thin films has predominantly utilized ozone (O<sub>3</sub>) or O<sub>2</sub> plasma as oxygen sources. However, the impact of H<sub>2</sub>O as an oxygen precursor on the properties of Ga<sub>2</sub>O<sub>3</sub> films has not been extensively explored. In this study, we employ thermal atomic layer deposition (T-ALD) with trimethylgallium (TMG) and water (H<sub>2</sub>O) as precursors to systematically investigate the growth characteristics of Ga<sub>2</sub>O<sub>3</sub> films on sapphire substrates at a constant temperature of 450 °C. The H<sub>2</sub>O pulse duration is varied between 0.1 and 0.5 s. Our results reveal that the Ga<sub>2</sub>O<sub>3</sub> films exhibit the α-phase when the H<sub>2</sub>O pulse duration ranges from 0.1 to 0.3 s. As the H<sub>2</sub>O pulse duration increases, the films undergo a transition to an amorphous structure, accompanied by the formation of significant oxygen vacancies. The maximum film roughness of 0.531 nm is observed at a pulse duration of 0.2 s, while the highest bandgap of 5.53 eV is achieved at a pulse duration of 0.3 s. Under ultraviolet illumination with a power intensity of 224 μW/cm<sup>2</sup>, the solar-blind ultraviolet detector demonstrates a photocurrent of 4.7 × 10<sup>−7</sup> A, a dark current of 4.2 × 10<sup>−9</sup> A, and a maximum on/off ratio of 112, with a responsivity of 0.6 mA/W. The device exhibits a response time (τ<sub>r</sub>) of 0.08 s and a decay time (τd) of 5.20 s at a bias voltage of 5 V, along with persistent photoconductivity (PPC).</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"670 ","pages":"Article 128321"},"PeriodicalIF":2.0,"publicationDate":"2025-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145005261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Cr2O3 layers deposited on sapphire substrates by mist-CVD and RF magnetron sputtering 采用雾相cvd和射频磁控溅射技术在蓝宝石衬底上沉积Cr2O3层

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2025-08-26 DOI: 10.1016/j.jcrysgro.2025.128320

P.N. Butenko , R.B. Timashov , A.V Almaev , M.E. Boiko , A.V. Chikiryaka , L.I. Guzilova , E.S. Sergienko , M.D. Sharkov , A.I. Stepanov , V.I. Nikolaev

{"title":"Cr2O3 layers deposited on sapphire substrates by mist-CVD and RF magnetron sputtering","authors":"P.N. Butenko , R.B. Timashov , A.V Almaev , M.E. Boiko , A.V. Chikiryaka , L.I. Guzilova , E.S. Sergienko , M.D. Sharkov , A.I. Stepanov , V.I. Nikolaev","doi":"10.1016/j.jcrysgro.2025.128320","DOIUrl":"10.1016/j.jcrysgro.2025.128320","url":null,"abstract":"<div><div>We have developed corundum-like Cr<sub>2</sub>O<sub>3</sub> / α-Al<sub>2</sub>O<sub>3</sub> heterostructures using a novel mist-CVD technique, varying the growth parameters to modify the morphology and crystallinity of the Cr<sub>2</sub>O<sub>3</sub> films. This technique is considered as an alternative to conventional radio-frequency (RF) magnetron sputtering, which requires a subsequent annealing due to low crystal perfection of the sputtered films. Layers deposited by both techniques are analyzed. The highest crystallinity among magnetron sputtered films was achieved in case of 3-hour annealing at 350 °C, however, any of the films grown by mist-CVD possess the mosaic spread with less-misoriented blocks. Moreover, the mist-CVD films own a much more developed morphology with a substructure of specifically oriented crystallites, that can be modified directly during a growth process. It has been shown that the growth rates of Cr<sub>2</sub>O<sub>3</sub> films by chemical vapor deposition are significantly higher than in the case of sputtering. Thereby, Cr<sub>2</sub>O<sub>3</sub> / α-Al<sub>2</sub>O<sub>3</sub> heterostructures grown by mist-CVD technique may have applications as functional semiconductor surfaces.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"668 ","pages":"Article 128320"},"PeriodicalIF":2.0,"publicationDate":"2025-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144908187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of heat treatment process on the preparation of zirconia whiskers using KCl/NaVO3 molten salt 热处理工艺对KCl/NaVO3熔盐制备氧化锆晶须的影响

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2025-08-25 DOI: 10.1016/j.jcrysgro.2025.128319

Quan Zhang , Junxiong Zhang , Feng Jiang , Guo Feng , Jianmin Liu , Jian Liang , Hua Li , Qing Hu

引用次数: 0

Combined crystallization-particulate fouling dynamics in a forced circulation crystallizer 强制循环结晶器中结晶-颗粒联合结垢动力学

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2025-08-22 DOI: 10.1016/j.jcrysgro.2025.128315

Jamal Darand , Ali Jafarian

{"title":"Combined crystallization-particulate fouling dynamics in a forced circulation crystallizer","authors":"Jamal Darand , Ali Jafarian","doi":"10.1016/j.jcrysgro.2025.128315","DOIUrl":"10.1016/j.jcrysgro.2025.128315","url":null,"abstract":"<div><div>The heat exchanger of a FC crystallizer in Zero Liquid Discharge technology suffers reduced efficiency due to the deposition of suspended particles and dissolved ions on the tube surfaces. This research utilized a compartmental modeling, encompassing nucleation, growth, dissolution, and attrition, to examine the crystallization and particulate fouling of calcium carbonate in a FC heat exchanger over time. The impact of the deposit layer developed on the inside surface of the heat exchanger tube on heat transfer and crystallizer efficiency was examined. The results indicated that supersaturation in the calcium carbonate solution triggered the primary nucleation process in the bulk flow, rendering it resistant to further supersaturation. The reduction in supersaturation after about 2000 s (from about 1 to below 0.3) leads to a minimal degree of crystallization fouling. The increased number of calcium carbonate crystal nuclei via nucleation activation, facilitates particulate deposition mechanisms. Furthermore, several relevant parameters, including circulation flow rate, operating temperature, calcium carbonate feed concentration, purge flow rate, and crystallizer efficiency were explored. The circulation flow rate and condenser temperature were determined to be the principal factors affecting particulate fouling.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"669 ","pages":"Article 128315"},"PeriodicalIF":2.0,"publicationDate":"2025-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144920113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0