Journal of Crystal Growth最新文献

{"title":"Ultra-large β-Ga2O3 nanobelt and nanobelt-based multi-MOSFET integration","authors":"Haifeng Chen ,&nbsp;Zijie Ding ,&nbsp;Chunling Chen ,&nbsp;Xuyang Liu ,&nbsp;Xiexin Sun ,&nbsp;Zhihong Wei ,&nbsp;Jun Ma ,&nbsp;Yifan Jia ,&nbsp;Yue Hao","doi":"10.1016/j.jcrysgro.2026.128505","DOIUrl":"10.1016/j.jcrysgro.2026.128505","url":null,"abstract":"<div><div>In this work, ultra-large β-Ga₂O₃ nanobelts with millimeter-long and hundreds-of-micron-wide dimensions are synthesized using the carbon thermal reduction method. The maximum width of nanobelts is 352 μm. The nanobelts are of high-purity β phase with a thickness of approximately 65 nm, and their surface is defect-free and smooth with a root mean square roughness of 370 pm. The optimal growth direction of nanobelt is [010], and the easy cleavage planes are (<span><math><mrow><mover><mrow><mn>1</mn></mrow><mrow><mo>¯</mo></mrow></mover></mrow></math></span> 12) and (<span><math><mrow><mover><mrow><mn>1</mn></mrow><mrow><mo>¯</mo></mrow></mover><mover><mrow><mn>1</mn></mrow><mrow><mo>¯</mo></mrow></mover></mrow></math></span> 2). Based on the nanobelts, multi-MOSFET device process integration is carried out, and a 150 × 150 μm² source/drain electrode placement is achieved on a 165 μm-wide nanobelt. The dark drain current is extremely low of about 10^-13 A. Under the 254 nm solar-blind UV light, MOSFET exhibits the excellent gate control characteristics. This study highlights the significant application potential of the distinctive crystal morphology of β-Ga₂O₃ nanobelts in future microelectronics.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"680 ","pages":"Article 128505"},"PeriodicalIF":2.0,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146076446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characterization of III-V layers grown on Ge|Si virtual substrates fabricated by LT-PECVD for photovoltaic devices","authors":"Elisa García-Tabarés ,&nbsp;Víctor Orejuela ,&nbsp;Ignacio Rey-Stolle ,&nbsp;Verónica Braza ,&nbsp;Daniel F. de los Reyes ,&nbsp;Paula Mouriño ,&nbsp;Raquel Resta ,&nbsp;Víctor J. Gómez ,&nbsp;Pere Roca i Cabarrocas ,&nbsp;Iván García","doi":"10.1016/j.jcrysgro.2026.128493","DOIUrl":"10.1016/j.jcrysgro.2026.128493","url":null,"abstract":"<div><div>The integration of III-V semiconductors on silicon through Ge|Si virtual substrates has shown significant potential. Conventional methods typically employ relatively thick Ge layers (several microns) to produce surfaces with low defect densities, though these layers introduce constraints—particularly the risk of cracking—due to the differing thermal expansion coefficients between Si, Ge, and subsequent III-V materials. A novel approach was developed to alleviate thermal strain by drastically reducing the Ge layer thickness (&lt;200 <!--> <!-->nm) and deposition temperature (&lt;250 °C) using PECVD. Remarkably low threading dislocation densities (∼10⁶ <!-->cm⁻²) were reported for these substrates, making them attractive for III-V growth. However, the integration of III-V materials on these substrates has yielded devices with subpar performance, especially in photovoltaic applications. The origin of these defects may lie in the Ge|Si substrates or arise during subsequent III-V growth via MOVPE. This study investigates the reasons why ultrathin Ge|Si virtual substrates have yet to produce high-performance solar cells. To this end, a comprehensive set of Ga(In)As/Ge|Si structures was fabricated and analyzed in depth using SEM, TEM, and AFM. Results reveal that defects initiate at the Ge|Si interface and propagate throughout the III-V layers, with Ge layer thickness in the range from 20 to 120 nm having minimal impact on defect formation. Furthermore, the MOVPE process for III-V growth was found to have a limited effect on the structural integrity of the substrates. Our findings suggest that, while ultrathin Ge|Si virtual substrates may not currently be suitable for high-efficiency III-V solar cells, they could still be viable for other optoelectronic devices less dependent on minority carrier properties.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"680 ","pages":"Article 128493"},"PeriodicalIF":2.0,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146076447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development and optimization of solid solution synthesis based on metal halides of two crystalline classes","authors":"Dmitrii Salimgareev ,&nbsp;Alexander Lvov ,&nbsp;Polina Pestereva ,&nbsp;Darya Vorobyeva ,&nbsp;Ekaterina Kabykina ,&nbsp;Anastasia Yuzhakova ,&nbsp;Liya Zhukova","doi":"10.1016/j.jcrysgro.2026.128516","DOIUrl":"10.1016/j.jcrysgro.2026.128516","url":null,"abstract":"<div><div>The article presents a comprehensive approach to obtaining two classes of optical materials based on metal halides. The use of the thermozone crystallization–synthesis method is substantiated. This technology was applied to produce high-purity raw materials of two types: silver halides and complex silver-thallium halides. Optimal precursor compositions were selected to enable the preparation of raw materials with the desired composition while minimizing economic costs. Within the first class of materials, single crystal and ceramic samples with a composition of 20 mol. % AgI in AgCl_0.25Br_0.75 were obtained. In the second class, samples of various structures based on 15 mol. % TlBr_0.46I_0.54 in AgCl_0.25Br_0.75 were produced. Optimal technological regimes for crystal growth and optical ceramic synthesis were determined. It was established that a single recrystallization cycle is sufficient to obtain ceramic samples. To grow single crystals, two or more recrystallization cycles are necessary to achieve maximum compositional homogeneity and solid solution supersaturation. Samples synthesized from the raw material, depending on the number of cycles, had different structures with identical chemical compositions. However, the structure inevitably affected the characteristics of each class of materials. For example, a significant reduction in transmittance was observed for optical ceramics due to the presence of alloying phase grains in the cubic matrix, despite similar microhardness values for samples of different structures. The study concluded that it is possible to obtain single crystals with high functional properties from the heterogeneous region of the melting diagrams of metal halides using thermozone crystallization synthesis.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"680 ","pages":"Article 128516"},"PeriodicalIF":2.0,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146171290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Preparation of TiC whiskers using Ti3AlC2 MAX precursor","authors":"Kh. Zamani,&nbsp;M. Tavoosi,&nbsp;A. Ghasemi","doi":"10.1016/j.jcrysgro.2026.128514","DOIUrl":"10.1016/j.jcrysgro.2026.128514","url":null,"abstract":"<div><div>The present work focuses on the formation of TiC whiskers from Ti₃AlC₂ MAX precursor. In this regard, the Al content in Ti₃AlC₂ phase was removed using HF selective acidic etching process and the formation of TiC whiskers was followed by controlled annealing at temperature range of 800–1100 °C for 1 h. The phase and structural characteristics of prepared samples were analyzed using X-ray diffraction (XRD), field emission scanning electron microscope (FESEM) and differential scanning calorimetry and thermogravimetry (DSC-TG) analysis. The results showed that by performing the controlled annealing process of Ti₃C₂T_x MXene phase, it is possible to form TiC whiskers in-situ. The formation of initial Ti₃O₅ particles on the surface of the MXene phase and the role of this phase in the germination of TiC whiskers is significant. A two-dimensional (2-D) nucleation on the Ti₃O₅ <!-->precipitates and continuous adsorption of growth adatoms on the {1 1 1} face was proposed to explain the TiC whisker formation.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"680 ","pages":"Article 128514"},"PeriodicalIF":2.0,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146171217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Si (Mg) doping in β-Ga2O3 crystals by edge-defined film-fed growth: A comparative analysis of microstructure, bandgap, and temperature-dependent properties","authors":"Wei Hu ,&nbsp;Guang Wen ,&nbsp;Rongcheng Yao ,&nbsp;Shuixiu Lin ,&nbsp;Lingyu Wan ,&nbsp;Shengnan Zhang ,&nbsp;Yinming Wang ,&nbsp;Manika Tun Nafisa ,&nbsp;Zhe Chuan Feng ,&nbsp;Benjamin Klein ,&nbsp;Ian T. Ferguson","doi":"10.1016/j.jcrysgro.2026.128487","DOIUrl":"10.1016/j.jcrysgro.2026.128487","url":null,"abstract":"<div><div>Systematic investigations of microstructure, the optical properties, band gap and variable temperature behaviors are conducted comparatively for Si/Mg-doped β-Ga₂O₃ crystals by edge-defined film-fed growth (EFG). The X-ray diffraction results revealed that compared with unintentionally doped β-Ga₂O₃ single crystals, Si doping led to a decrease in the interplanar spacing of the (400), (600), and (800) crystal planes in β-Ga₂O₃ single crystals, while Mg doping resulted in an increase in their interplanar spacing. Through a comprehensive analysis of the dataset of Room-temperature photoluminescence (PL), we identified that the defect-related luminescence of the two samples exhibited significantly changed. For the Si-doped sample, the PL blue emission was strong while the red emission was weak; in contrast, the Mg-doped sample showed the opposite trend, with strong red emission and weak blue emission, accompanied by multiple narrow-band red luminescence peaks. Variable-temperature photoluminescence (PL) results showed that the luminescence peak position of Si-doped β-Ga₂O₃ first redshifted and then blue shifted with increasing temperature, while the luminescence peak position and intensity of the Mg-doped sample exhibited a monotonous decreasing trend. Further analysis revealed that Si doping reduced the band gap, with the Fermi level moving closer to the conduction band bottom; in contrast, Mg doping increased the band gap, causing the Fermi level to shift toward the middle of the band gap. Under the variable-temperature condition from 10 K to 300 K, the temperature-dependent variation of the band gap conforms to the Varshni formula.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"679 ","pages":"Article 128487"},"PeriodicalIF":2.0,"publicationDate":"2026-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145941266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Numerical simulation of mass transfer and hydrodynamics in confined growth of KDP crystals","authors":"Zhongjun Cao ,&nbsp;Jianyu Bai ,&nbsp;Guokai Hao ,&nbsp;Yang Li ,&nbsp;Guodong Lei ,&nbsp;Lisong Zhang ,&nbsp;Mingxia Xu ,&nbsp;Hongkai Ren ,&nbsp;Baoan Liu ,&nbsp;Xun Sun","doi":"10.1016/j.jcrysgro.2026.128491","DOIUrl":"10.1016/j.jcrysgro.2026.128491","url":null,"abstract":"<div><div>A high-efficiency gradient-refractive-index deuterated potassium dihydrogen phosphate (DKDP) crystal, prepared via a confined growth method based on the point-seed rapid growth technique, demonstrates optimized broadband third-harmonic generation performance. By restricting crystal growth within a cylindrical glass tube, this work systematically reveals the critical effects of confinement on mass transport and convective dynamics during crystal growth. Numerical simulations employing the finite volume method with the SST k-ω turbulence model are utilized to elucidate the regulatory mechanisms of rotation speed on both the magnitude and uniformity of surface supersaturation. Following preliminary screening of rotation parameters, orthogonal experimental design enabled the multivariate optimization of cylindrical glass tube dimensions (diameter/height) and rotation speed within predefined boundaries. Through comprehensive analysis of convective transport characteristics and surface supersaturation distributions under diverse parameter combinations, a theoretical framework integrating growth vessel design and kinetic parameter matching is established. This work provides a usable method for the controllable growth of functional crystals.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"679 ","pages":"Article 128491"},"PeriodicalIF":2.0,"publicationDate":"2026-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145975536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study on the transport of phosphorus dopant during the n-type monocrystalline silicon growth by Czochralski technique","authors":"Junling Ding ,&nbsp;Haowen Yu ,&nbsp;Zaoyang Li ,&nbsp;Qiping Chen ,&nbsp;Pengfei Wang ,&nbsp;Lijun Liu","doi":"10.1016/j.jcrysgro.2026.128492","DOIUrl":"10.1016/j.jcrysgro.2026.128492","url":null,"abstract":"<div><div>The distribution of phosphorus dopant in silicon has an important influence on the resistivity of silicon crystals. A two-dimensional transient global model is established in this paper to investigate the transport of phosphorus dopant during the <em>iso</em>-diameter growth of 200 mm Czochralski monocrystalline silicon. We focused on the dynamic consumption process of phosphorus dopant in the silicon melt during crystal growth, and analyzed the effects of segregation and evaporation behavior, as well as the turbulent viscosity on the transport of phosphorus dopant. The results reveal that the concentration of phosphorus dopant at crystal-melt interface exhibits a trend in which the concentration is elevated at the center compared to the edge. Furthermore, the phosphorus dopant concentration in the melt progressively increases with crystal growth, resulting in a higher content in the tail of monocrystalline silicon compared to the head. By comparing with the experimental data, it is confirmed that when calculating the transport of phosphorus dopant in the melt, the melt turbulent viscosity and the evaporation behavior of phosphorus needs to be considered. At the same time, we also determined the evaporation coefficient for accurately calculating phosphorus dopant distribution.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"679 ","pages":"Article 128492"},"PeriodicalIF":2.0,"publicationDate":"2026-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145975537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Controlled synthesis of Mg(OH)2 with tailored crystal morphologies from brucite via hydration: Morphological evolution mechanism and hydration kinetics","authors":"Yanbing Zhu ,&nbsp;Yubai Zhang ,&nbsp;Jiani Wang ,&nbsp;Songyan Jia ,&nbsp;Yali Ma ,&nbsp;Gang Li ,&nbsp;Xue Li ,&nbsp;Qiang Zheng","doi":"10.1016/j.jcrysgro.2026.128501","DOIUrl":"10.1016/j.jcrysgro.2026.128501","url":null,"abstract":"<div><div>Brucite, an underutilized magnesium-rich mineral, exhibits untapped potential for magnesium hydroxide (Mg(OH)₂) production, yet its utility in fabrication non-typical crystal morphologies remains underexplored. This study presents a novel strategy for the controlled synthesis of Mg(OH)₂ with a unique triangular pyramidal morphology via a calcination-hydration process using brucite, coupled with a systematic elucidation of its morphological evolution and hydration kinetics. The results reveal that the triangular pyramidal structure is attributed to the selective adsorption of H₂SiO₄²⁻ on specific crystal planes during initial hydration. As hydration proceeds, a dissolution–recrystallization mechanism governs the morphological evolution from triangular pyramids to hexagonal plates, with edge and vertex dissolution of initial nuclei underpinning the formation of thermodynamically stable hexagonal lamellae. Kinetic analysis, employing the Avrami model and Arrhenius equation, reveals that the hydration process is governed by synergistic nucleation and growth behavior, with finer brucite particles exhibiting a lower activation energy (26.22 kJ·mol⁻¹) and faster reaction rates compared to coarser particles (46.20 kJ·mol⁻¹). This work not only elucidates the Si-mediated morphological evolution mechanism of Mg(OH)₂ from brucite but also provides critical kinetic insights for optimizing the synthesis of special crystal morphologies, providing a viable pathway to valorize low-grade brucite resources for advanced functional material applications.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"679 ","pages":"Article 128501"},"PeriodicalIF":2.0,"publicationDate":"2026-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146035715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Status and new features of the topography beamline 1-BM after the Advanced Photon Source upgrade","authors":"XianRong Huang,&nbsp;Lahsen Assoufid","doi":"10.1016/j.jcrysgro.2026.128488","DOIUrl":"10.1016/j.jcrysgro.2026.128488","url":null,"abstract":"<div><div>The beamline 1-BM of the Advanced Photon Source (APS), a bending-magnet beamline with an effective X-ray beam size of ∼<span><math><mrow><mn>100</mn><mo>×</mo><mn>4</mn></mrow></math></span> mm², has relatively comprehensive synchrotron topography and rocking curve imaging capabilities for characterization of crystals (particularly wide-bandgap semiconductors SiC, AlN, GaN, Ga₂O₃ etc). It is equipped with a white-beam topography stage for imaging large wafers up to 8 in.. It also has a double-crystal setup, of which the second stage can be used for monochromatic-beam topography. The first stage has different beam conditioners in the grazing-incidence geometry that can expand the vertical beam size from 4 to ∼100 mm for double-crystal rocking curve imaging when it is combined with the second stage. Recently APS has been upgraded to a modern 4th-generation light source, and 1-BM has been recommissioned to its normal operation for general users with better performance. The upgraded APS leads to new features at 1-BM. The much smaller source size and higher X-ray coherence significantly improve the image resolution and contrast. The higher flux and brightness of the new source reduce exposure time, which mitigates the mechanical drifting and vibration issues. Here the main capabilities and status of 1-BM together with these new features are introduced.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"679 ","pages":"Article 128488"},"PeriodicalIF":2.0,"publicationDate":"2026-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145975534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Distribution of Ce3+ ions in mixed crystals of the homologous series LiSrxCa1-xAlF6","authors":"A.A. Shavelev ,&nbsp;T.M. Minnebaev ,&nbsp;A.M. Zubareva ,&nbsp;A.A. Shakirov ,&nbsp;A.G. Kiiamov ,&nbsp;I.D. Sidorov ,&nbsp;S.L. Korableva ,&nbsp;V.V. Semashko ,&nbsp;K.R. Minnebaev ,&nbsp;B.I. Gareev ,&nbsp;A.S. Nizamutdinov","doi":"10.1016/j.jcrysgro.2026.128484","DOIUrl":"10.1016/j.jcrysgro.2026.128484","url":null,"abstract":"<div><div>In this paper we study the distribution of Ce³⁺ ions in UV active medium mixed crystals LiSr_xCa_1-xAlF₆:Ce³⁺ depending on the ratio of Ca²⁺/Sr²⁺ cations and show the possibility to manage properties of the active medium by changing the cation set of the matrix. The Bridgman method was used for crystal growth. Optical spectroscopy and ICP-MS methods were used to investigate the concentrations of impurity ions. In a series of single crystal samples grown by the Bridgman method with Ce³⁺ content 0.1 and 1.0 at.%, and different x values, an optimal crystal composition of LiSr_0.5Ca_0.5AlF₆:Ce³⁺ was established with the distribution coefficient of Ce³⁺ ions 6 times higher than in the known UV active medium – LiCaAlF₆:Ce³⁺ crystal.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"679 ","pages":"Article 128484"},"PeriodicalIF":2.0,"publicationDate":"2026-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145975533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}