{"title":"Substrate temperature driven optimization of epitaxial α-GeTe thin films: optical, structural, and electrical properties","authors":"Avijit Mahapatra, Malleswararao Tangi","doi":"10.1016/j.jcrysgro.2025.128318","DOIUrl":"10.1016/j.jcrysgro.2025.128318","url":null,"abstract":"<div><div>We report a detailed study on the structural, optical, and electronic transport properties of GeTe thin films epitaxially grown on c-plane sapphire substrates via UHV molecular beam epitaxy at substrate temperatures ranging from 200 °C to 350 °C. Grazing incidence X-ray diffraction confirms single-phase rhombohedral α-GeTe across all growth temperatures, with systematic lattice expansion and improved crystallinity observed at elevated temperatures. Atomic force microscopy and X-ray reflectivity analyses reveal that surface roughness decreases significantly at intermediate growth temperatures, achieving sub-nanometre RMS values at 300 °C. Raman spectroscopy identifies a temperature-dependent redshift of A<sub>1g</sub> and A<sub>1u</sub> phonon modes, indicating strain relaxation and phonon softening, while X-ray photoelectron spectroscopy confirms minimal oxidation and near-stoichiometric Ge: Te ratios. Electrical transport measurements demonstrate degenerate p-type conductivity characterised by high hole concentrations (∼3 × 10<sup>20</sup> cm<sup>−3</sup>) and phonon-limited carrier mobility. Films grown at 300 °C exhibit optimal structural, phononic, stoichiometric, and electronic properties, establishing it as the optimized growth temperature for high-quality α-GeTe growth. This study paves the path towards exploring the future ferroelectric properties and relevant device applications of epitaxial α-GeTe thin films.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"668 ","pages":"Article 128318"},"PeriodicalIF":2.0,"publicationDate":"2025-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144890692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The impact of polycarbosilane pyrolysis temperature on the field emission properties of La-Doped SiC nanowires","authors":"Li Weidong , Zhang Meng , Xue Ran","doi":"10.1016/j.jcrysgro.2025.128316","DOIUrl":"10.1016/j.jcrysgro.2025.128316","url":null,"abstract":"<div><div>Lanthanum-doped SiC nanowires (La-doped SiC NWs) were synthesized via the thermal conversion of a polycarbosilane precursor at varying pyrolysis temperatures. Polycarbosilane was employed as a provider of both the Si and C elements. Field emission tests indicated that the turn-on field of the sample decreased from 3.8 to 1.65 V/μm, with the lowest turn-on field achieved when the pyrolysis temperature was set at 900℃, and the corresponding field enhancement factor β was 5016, representing a 41.6 % increase compared to the untreated sample. Both SEM and TEM results indicated that the pyrolysis temperature significantly influenced the morphology of the nanowires. Specifically, at a pyrolysis temperature of 1000℃, the nanowires exhibited the straightest structure and the largest diameter. Additionally, the unprocessed samples had the thickest SiO<sub>2</sub> coating layer surrounding the SiC. The results of the SAED and XRD analysis confirmed that the products maintain the cubic sphalerite structure. Findings in the present study may provide certain foundation for future studies examining the FE properties of additional one-dimensional nano-material.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"668 ","pages":"Article 128316"},"PeriodicalIF":2.0,"publicationDate":"2025-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144842625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Photoluminescence properties of Cu2O crystals grown by mist chemical vapor deposition on a c-plane sapphire substrate at high growth-temperature","authors":"Shuto Kobayashi , Togi Sasaki , Masaru Sakai , Tetsuya Kouno","doi":"10.1016/j.jcrysgro.2025.128317","DOIUrl":"10.1016/j.jcrysgro.2025.128317","url":null,"abstract":"<div><div>Cu<sub>2</sub>O crystals were grown on c-plane sapphire substrates at a high growth-temperature of approximately 960 °C using mist-chemical vapor deposition (mist-CVD), which has a potentially low environmental impact and low cost. Using X-ray diffraction analysis, Raman spectroscopy, and scanning electron microscopy, experimental results evinced the growth of Cu<sub>2</sub>O crystals. Cu<sub>2</sub>O crystals are expected to be used in low-cost luminescent materials in red region, such as light emitting diodes (LEDs) owing to their direct-bandgap energy of approximately 2.1 eV and p-type conductivity. We examined photoluminescence (PL) properties of the Cu<sub>2</sub>O crystals grown by mist-CVD. At low temperatures, we observed a clear photoluminescence peak near the band gap energy, indicating that the mist-CVD grown Cu<sub>2</sub>O crystals can be used as luminescent materials in the red region.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"668 ","pages":"Article 128317"},"PeriodicalIF":2.0,"publicationDate":"2025-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144863582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Solute transport and coalescence of a pair of bubbles subject to horizontal solidification","authors":"Che-Lun Chiu, Pao-Te Tseng, Ming-Jie Liu, Peng-Sheng Wei","doi":"10.1016/j.jcrysgro.2025.128314","DOIUrl":"10.1016/j.jcrysgro.2025.128314","url":null,"abstract":"<div><div>This study provides a pioneering investigation to numerically predict the development of pore shapes, velocity, and solute concentration fields for two bubbles trapped in a solid during the horizontal-advancing solidification of, for example, a water-carbon dioxide solution. Structural porous materials can degrade microstructures, while functional porous materials improve efficiency in industries such as food, engineering, and biomedical sectors, as well as in atmospheric physics and global warming control. Using COMSOL software, the transport equations for thermal-fluid dynamics and concentration were solved to determine the pressure, velocity, temperature, and concentration fields during bubble development and coalescence. Bubbles tend to coalesce under high gravitational acceleration, low liquid thermal conductivity, and small inter-pore spacing. Concentration within and around the pores, as well as in solidified regions, increases with gravitational acceleration, ambient pressure, and surface tension. The predicted spatially dependent contact angle matches analytical results, which have been previously validated by experimental data. A systematic understanding of the mechanisms and the final shapes and concentration fields of two bubbles entrapped in the solidified region during horizontal solidification is provided</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"668 ","pages":"Article 128314"},"PeriodicalIF":2.0,"publicationDate":"2025-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144770955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hao Zhou , Jianmei Li , Xiaozhen Wang , Yiqiao Chen , Chang Liu
{"title":"Antimony background in molecular beam epitaxy growth of antimonide superlattices","authors":"Hao Zhou , Jianmei Li , Xiaozhen Wang , Yiqiao Chen , Chang Liu","doi":"10.1016/j.jcrysgro.2025.128312","DOIUrl":"10.1016/j.jcrysgro.2025.128312","url":null,"abstract":"<div><div>In this paper, the presence of residual antimony in the background of the growth chamber of molecular beam epitaxy (MBE) system was observed, and the behavior of residual antimony (Sb) during MBE growth of InAs/GaSb superlattices was investigated for the first time. The investigation revealed that the residual Sb, present in the background during superlattice growth, become incorporated into the InAs layer. This significant finding calls into question the conventional assertion that Sb in InAs is derived from the diffusion of Sb in GaSb, thereby establishing a new paradigm for understanding the origin of Sb in InAs. Indeed, two sources of Sb have been identified in the InAs sublayer of InAs/GaSb type II superlattices. Firstly, there is the conventional diffusion of Sb in GaSb, and secondly, there is Sb in the background in some MBE growth chamber. This finding also facilitates a more profound and comprehensive understanding of the epitaxial growth process of antimonide superlattices.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"668 ","pages":"Article 128312"},"PeriodicalIF":2.0,"publicationDate":"2025-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144749508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Photocatalytic performance of flower-like ZnO films deposited on stainless steel mesh via electrochemical approach: Influence of deposition time and annealing temperature","authors":"Raumporn Thongruang , Montri Aiempanakit , Kamon Aiempanakit","doi":"10.1016/j.jcrysgro.2025.128311","DOIUrl":"10.1016/j.jcrysgro.2025.128311","url":null,"abstract":"<div><div>Flower-like zinc oxide (ZnO) films were deposited directly onto stainless steel mesh (SSM) substrates via an electrochemical method, followed by thermal annealing at different temperatures. The effects of deposition time (2.5 and 5.0 min) and annealing temperature (400 °C and 700 °C) on the structural and photocatalytic properties of the films were systematically investigated. Surface morphology of flower-like ZnO nanostructures was characterized by field-emission scanning electron microscopy (FE-SEM), while energy-dispersive X-ray spectroscopy (EDS) confirmed the elemental composition. Crystallographic structures were examined by X-ray diffraction (XRD). Photocatalytic activity was evaluated by monitoring the degradation of methylene blue (MB) under UV irradiation. Among all samples, the ZnO films deposited for 5.0 min and annealed at 700 °C exhibited the highest degradation rate, with a reaction rate constant of 1.16 × 10<sup>−3</sup> min<sup>−1</sup>. The enhancement in performance is attributed to improved crystallinity, grain growth, and increased charge carrier mobility following high-temperature annealing. These findings highlight the significance of controlling deposition parameters and post-treatment conditions for optimizing ZnO-based photocatalysts on conductive substrates.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"668 ","pages":"Article 128311"},"PeriodicalIF":2.0,"publicationDate":"2025-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144756966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Rapid ZnO rod synthesis via direct heating: impact of kanthal coil gauge on structure and dye removal efficiency","authors":"Chee Meng Koe , Swee-Yong Pung , Sumiyyah Sabar","doi":"10.1016/j.jcrysgro.2025.128310","DOIUrl":"10.1016/j.jcrysgro.2025.128310","url":null,"abstract":"<div><div>The Direct Heating (DH) method provides a cost-effective and rapid approach for synthesizing ZnO rods on kanthal wire. The diameter of kanthal wire (coil gauge) could have a significant impact on the heating rate and temperature of kanthal coils and precursor solution. Subsequently, this could affect the nucleation and growth of ZnO rods on the surface of kanthal coils. In this work, the effect of coil gauge on the growth of ZnO rods was studied. Kanthal coils with gauge size of 22 ga, 24 ga, 26 ga, and 28 ga were selected. The heating power was kept at 40 W with a heating duration of 4 min. It is noted that the ZnO rods were fully grown on the surface of kanthal coils, regardless of gauge size within this short period. Amongst the coil gauges, 22 ga kanthal coils exhibited the best results in terms of length (576.41 ± 72.34 nm), diameter (201.12 ± 21.89 nm), areal density (11 ± 3.39 rods/µm<sup>2</sup>), and with Rhodamine B (RhB) removal efficiency (25.15 %). Also, the precipitation of ZnO particles on top of the ZnO rods was found minimum. The result indicates that selection of gauge size of kanthal coils in DH method is important as it affects the heat generation and growth of ZnO rods on the surface of kanthal coils.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"668 ","pages":"Article 128310"},"PeriodicalIF":2.0,"publicationDate":"2025-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144749507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Observation-velocity-convergence-based determination of optimal seeding time for sapphire preparation via Kyroupous method","authors":"Jia Xu , Tiezhu Qiao , Huijie Dong","doi":"10.1016/j.jcrysgro.2025.128293","DOIUrl":"10.1016/j.jcrysgro.2025.128293","url":null,"abstract":"<div><div>High-quality seeding operations are crucial for ensuring the preparation of high-quality sapphire single crystals, in which the accurate determination of seeding timing is a key issue. However, existing detection methods possess limitations in obtaining sufficient feature points, assessing single feature dimension, and tracking spoke motion on the melt surface. To address these challenges, this study proposes an observation-velocity-convergence method to detect the optimal timing for crystal seeding. The industrial charge coupled device sensors replace eyes of skilled workers to observe in this method. This strategy involves applying an edge detection algorithm to analyze the surface texture of the sapphire melt, optimizing the non-maximum suppression process to increase the number of feature points to 10. Non-uniform sampling is employed to select key frames and extract relevant information about features. The stability of data is assessed by analyzing changes in adjacent angles of characteristic points on the melt surface, followed by determining the best seeding timing using a speed fitting model. This approach not only enhances the dimensional aspect of detecting seeding timing but also improves accuracy while expediting detection rate and reducing data redundancy. Experimental results demonstrate that this strategy increases Class A seed crystal seeding success percentage by 3.3% while reducing seeding time by approximately 0.2 h.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"668 ","pages":"Article 128293"},"PeriodicalIF":1.7,"publicationDate":"2025-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144714184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Distribution of the highly volatile dopant in NaI:Tl crystals grown by the ROST technology","authors":"V. Protsenko, S. Gridin","doi":"10.1016/j.jcrysgro.2025.128303","DOIUrl":"10.1016/j.jcrysgro.2025.128303","url":null,"abstract":"<div><div>Thallium iodide used as the dopant in NaI:Tl scintillation crystals is a highly volatile component that poses a challenge for crystal growth when pulling from the melt. A theoretical calculation of Tl distribution in NaI crystals grown by an industrial continuous feeding technology ’ROST’ was conducted based on experimental data to evaluate parameters. One-stage feeding and two-stage feeding were considered in the study to achieve a target dopant concentration. The results show both calculated and measured dopant distributions in the crystal, which can help optimize the feeding rates of the raw materials, NaI and TlI.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"668 ","pages":"Article 128303"},"PeriodicalIF":2.0,"publicationDate":"2025-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144722555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Glycine crystal growth under air-cooling with/without irradiation of 40 GHz sub-terahertz wave","authors":"Kazuma Iwasaki , Kairu Takashima , Sho Fujii , Tsuyoshi Kimura , Masaya Yamamoto , Tadao Tanabe","doi":"10.1016/j.jcrysgro.2025.128309","DOIUrl":"10.1016/j.jcrysgro.2025.128309","url":null,"abstract":"<div><div>In any crystal growth, it is essential to understand the intermolecular interactions vibrating at terahertz frequencies, since these intermolecular interactions determine the packing of molecules during the growth process. In this study, we experimentally confirmed that in the growth of glycine crystals in a closed system, crystals that aggregate in the absence of irradiation but do not aggregate under irradiation of 40 GHz electromagnetic waves. This suggests that the aggregation inside the aqueous solution was prevented by the excitation of intermolecular interactions by the sub-terahertz waves, and the metastable state of supersaturation was maintained. This sub-terahertz technology can be used to control the dissolution/precipitation state of materials in chemical industrial processes.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"668 ","pages":"Article 128309"},"PeriodicalIF":1.7,"publicationDate":"2025-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144711959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}