Journal of Crystal Growth最新文献

{"title":"Data-driven feasibility study of VGF β-Ga2O3 growth under traveling magnetic fields","authors":"Gagan Kumar Chappa,&nbsp;Milena Petković,&nbsp;Natasha Dropka","doi":"10.1016/j.jcrysgro.2024.128049","DOIUrl":"10.1016/j.jcrysgro.2024.128049","url":null,"abstract":"<div><div>Numerical simulations were conducted to examine the impact of a traveling magnetic field on the vertical gradient freeze growth of β-Ga₂O₃ crystals within a coated sapphire crucible under an argon-oxygen atmosphere. The research aimed to enhance β-Ga₂O₃ crystal growth by achieving a flatter solid–liquid interface through the application of Lorentz forces generated by KRIST <span><math><mover><mrow><mi>MAG</mi></mrow><mo>∼</mo></mover></math></span>® heaters. Furthermore, the study sought to identify a coating material that is chemically resistant and has a minimal effect on the magnitude of the Lorentz force.</div><div>To derive an equation that relates the Lorentz force with key growth parameters, we utilized SISSO, a machine learning technique combining symbolic regression and compressed sensing. The numerical results indicated that an upward traveling magnetic field significantly modifies the solid–liquid interface shape by counteracting buoyancy, enhancing vortex strength, and flattening the previously convex interface. The Pt-Rh alloy coating demonstrated minimal impact on the Lorentz force magnitude. Lorentz force exhibited a quadratic dependence on AC, periodic with a phase shift, and an asymmetric Gaussian profile with frequency.</div><div>Compressed sensing, along with numerical data, produced a broadly applicable and interpretable equation for predicting Lorentz force values in the VGF growth setup, identifying phase shift as a crucial variable.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"652 ","pages":"Article 128049"},"PeriodicalIF":1.7,"publicationDate":"2024-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143182892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence factors of aluminum nitride deposition investigated by molecular simulations","authors":"Yafei Li,&nbsp;Motoaki Kawase","doi":"10.1016/j.jcrysgro.2024.128050","DOIUrl":"10.1016/j.jcrysgro.2024.128050","url":null,"abstract":"<div><div>The effects of substrate surface polarity, substrate temperature and deposition rate on the AlN growth with chemical vapor deposition method were studied with the Stillinger–Weber potential. The differences in crystal structures, growth modes, and surface topography at the molecular level were discussed. For N-polar surface, the growth mode of AlN film is mainly vertical-direction growth mode. During the physical adsorption process, the N atoms have a high surface diffusion coefficient (≥ 2 × 10^–11 m²/s), due to the low attraction between N-polar AlN substrate surface and the deposited lightweight atoms (N atoms), causing the N atoms to collide with others and form large clusters, thereby leading to a vertical-direction growth mode. For Al-polar surface, the atoms have a low surface diffusion coefficient (≤ 2 × 10^–12 m²/s), causing the atoms to bond with the surface atoms quickly and leading to horizontal-direction mode and bilayer growth while maintaining consistent surface polarity. High temperatures promote the cleavage of Al–Al and N–N bonds and facilitating Al–N bond formation through atomic vibrations and translations. High deposition rates lead to increased cluster formation, limiting the time and space for rearrangement of chemically adsorbed atoms. High temperature and low deposition rate are conducive to the smoother surface morphology of the resulting AlN film and lead to the more ordered hexagonal structure. From the results, during the deposition process, high temperature, the Al-polar surface, and low deposition rate are favorable for epitaxial growth of AlN. Finally, the AlN grown on the Al-polar AlN surface contains a small area of N-polar region was studied and the repairmen mechanism of N-polar region is observed.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"652 ","pages":"Article 128050"},"PeriodicalIF":1.7,"publicationDate":"2024-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143183749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermodynamic analysis of phase and composition during the co-deposition of SiC-HfC films by chemical vapor deposition method","authors":"Pengjian Lu ,&nbsp;Pu Liao ,&nbsp;Chongjie Wang ,&nbsp;Yan Xing ,&nbsp;Chitengfei Zhang ,&nbsp;Qingfang Xu ,&nbsp;Rong Tu ,&nbsp;Song Zhang","doi":"10.1016/j.jcrysgro.2024.128051","DOIUrl":"10.1016/j.jcrysgro.2024.128051","url":null,"abstract":"<div><div>A thorough thermodynamic investigation of phase and composition in the SiCl₄-HfCl₄-C₃H₈-H₂ system is conducted during the co-deposition of SiC + HfC films by chemical vapor deposition method (CVD). The results indicate that medium temperature ranging from 1000 to1400 ^oC is more suitable for SiC deposition, while higher temperature (1400 ∼ 1800 °C) promotes HfC deposition. The co-deposition of pure SiC and HfC phases is observed when the C₃H₈/(SiCl₄ + HfCl₄) ratio is maintained between 0.15 and 0.3, along with an H₂/(SiCl₄ + HfCl₄) ratio exceeding 50. The excess carbon source leads to undesirable formation of graphite, whereas insufficient carburization may result in the formation of impurities such as Si or HfSi₂. An optimal increase the hydrogen ratio can suppress the formation of the graphite phase, but too much hydrogen may cause the decomposition of SiC, leading to additional impurities. Furthermore, a high-throughput calculation method was employed to generate the composition mapping, which allow for fine-tuned control of SiC-HfC film composition by adjusting temperature and the SiCl₄:HfCl₄ ratio.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"652 ","pages":"Article 128051"},"PeriodicalIF":1.7,"publicationDate":"2024-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143183750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of MoS2 growth on GaN/sapphire substrate using molecular beam epitaxy","authors":"Mohamed Al Khalfioui,&nbsp;Minh Tuan Dau,&nbsp;Zineb Bouyid,&nbsp;Ileana Florea,&nbsp;Philippe Vennéguès,&nbsp;Julien Brault,&nbsp;Stéphane Vézian,&nbsp;Adrien Michon,&nbsp;Yvon Cordier,&nbsp;Philippe Boucaud","doi":"10.1016/j.jcrysgro.2024.128047","DOIUrl":"10.1016/j.jcrysgro.2024.128047","url":null,"abstract":"<div><div>The growth of two-dimensional molybdenum disulphide (MoS₂) layers on Gallium Nitride/Sapphire (GaN/Al₂O₃) substrates using molecular beam epitaxy (MBE) growth technique has been investigated. We show that optimized conditions at a substrate temperature around 700 °C lead to full surface coverage of MoS₂ on GaN. The growth proceeds through the initial formation of triangular-shaped MoS₂ flakes/domains on the GaN surface. Raman spectroscopy and high-resolution scanning transmission electron microscopy reveal the formation at the wafer-scale of a MoS₂ monolayer and few bilayers. A closer analysis of regions with two MoS₂ layers reveals the coexistence of both 1 T and 1H phases, showing strong bonds between the top layer of GaN and the first MoS₂ layer, and van der Waals interactions between the first and second MoS₂ layers.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"652 ","pages":"Article 128047"},"PeriodicalIF":1.7,"publicationDate":"2024-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143183757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interfacial characterization of non-metal precipitates at grain boundaries in cast multicrystalline silicon crystals","authors":"Xiang Lv ,&nbsp;Hangfei Li ,&nbsp;Degong Ding ,&nbsp;Xuegong Yu ,&nbsp;Chuanhong Jin ,&nbsp;Deren Yang","doi":"10.1016/j.jcrysgro.2024.128042","DOIUrl":"10.1016/j.jcrysgro.2024.128042","url":null,"abstract":"&lt;div&gt;&lt;div&gt;Silicon carbide (SiC) and silicon nitride (Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt;) are two major non-metal precipitates commonly found along grain boundaries (GBs) in cast multicrystalline silicon (mc-Si) crystals. SiC precipitates are known to cause significant leakage current, which can adversely affect the performance of solar cells. Although Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt; itself is electrically inactive, it serves as a heterogeneous nucleation site for SiC, therefore indirectly compromising solar cell efficiency. Despite the impact, the interface structure and formation mechanisms of these precipitates at grain boundaries remain poorly understood. This study employs high-resolution transmission electron microscopy (HRTEM) to investigate the atomic-scale interface structures of SiC and Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt; precipitates at GBs in mc-Si crystals. Results indicate that SiC primarily exists in the cubic phase (&lt;span&gt;&lt;math&gt;&lt;mi&gt;β&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-SiC), while Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt; is predominantly in hexagonal phase (&lt;span&gt;&lt;math&gt;&lt;mi&gt;α&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt;). Two distinct interface structures, and consequently different strain states, are observed between the precipitate (&lt;span&gt;&lt;math&gt;&lt;mi&gt;β&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-SiC, &lt;span&gt;&lt;math&gt;&lt;mi&gt;α&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt;) and the Si matrix. The first type is an abrupt interface with a crystallographic relationship of &lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mfenced&gt;&lt;mn&gt;100&lt;/mn&gt;&lt;/mfenced&gt;&lt;mrow&gt;&lt;mi&gt;β&lt;/mi&gt;&lt;mtext&gt;-SiC&lt;/mtext&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;mspace&gt;&lt;/mspace&gt;&lt;/math&gt;&lt;/span&gt;//&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mfenced&gt;&lt;mn&gt;100&lt;/mn&gt;&lt;/mfenced&gt;&lt;mtext&gt;Si&lt;/mtext&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; and a high strain band at the interface. In the second type, an intermediate phase is inserted between the &lt;span&gt;&lt;math&gt;&lt;mi&gt;β&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-SiC and Si interface, exhibiting a crystallographic relationship of &lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mfenced&gt;&lt;mn&gt;011&lt;/mn&gt;&lt;/mfenced&gt;&lt;mrow&gt;&lt;mi&gt;β&lt;/mi&gt;&lt;mtext&gt;-SiC&lt;/mtext&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;//&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mfenced&gt;&lt;mn&gt;111&lt;/mn&gt;&lt;/mfenced&gt;&lt;mtext&gt;Si&lt;/mtext&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; and a strain-free state. Similar intermediate areas are also identified in &lt;span&gt;&lt;math&gt;&lt;mi&gt;α&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt;/Si and &lt;span&gt;&lt;math&gt;&lt;mi&gt;α&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt;/&lt;span&gt;&lt;math&gt;&lt;mi&gt;β&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-SiC interfaces, with crystallographic relationship of &lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mfenced&gt;&lt;mn&gt;001&lt;/mn&gt;&lt;/mfenced&gt;&lt;mrow&gt;&lt;mi&gt;α&lt;/mi&gt;&lt;mo&gt;-&lt;/mo&gt;&lt;msub&gt;&lt;mi&gt;Si&lt;/mi&gt;&lt;mn&gt;3&lt;/mn&gt;&lt;/msub&gt;&lt;msub&gt;&lt;mi&gt;N&lt;/mi&gt;&lt;mn&gt;4&lt;/mn&gt;&lt;/msub&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;//&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mfenced&gt;&lt;mn&gt;221&lt;/mn&gt;&lt;/mfenced&gt;&lt;mtext&gt;Si&lt;/mtext&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; and &lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mfenced&gt;&lt;mn&gt;010&lt;/mn&gt;&lt;/mfenced&gt;&lt;mrow&gt;&lt;mi&gt;α&lt;/mi&gt;&lt;msub&gt;&lt;mtext&gt;-Si&lt;/mtext&gt;&lt;mtext&gt;3&lt;/mtext&gt;&lt;/msub&gt;&lt;msub&gt;&lt;mtext&gt;N&lt;/mtext&gt;&lt;mn&gt;4&lt;/mn&gt;&lt;/msub&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;//&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mfenced&gt;&lt;mn&gt;111&lt;/mn&gt;&lt;/mfenced&gt;&lt;mrow&gt;&lt;mi&gt;β&lt;/mi&gt;&lt;mtext&gt;-SiC&lt;/mtext&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;, respectively. These intermediates regions significantly reduce associated inte","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"652 ","pages":"Article 128042"},"PeriodicalIF":1.7,"publicationDate":"2024-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143182894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Corrigendum to “Preparation of SiC coatings on graphite substrates via CVD using polysilaethylene” [J. Cryst. Growth 649 (2025) 127931]","authors":"Hiroki Sato,&nbsp;Takashi Goto,&nbsp;Akira Yoshikawa","doi":"10.1016/j.jcrysgro.2024.128040","DOIUrl":"10.1016/j.jcrysgro.2024.128040","url":null,"abstract":"","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"652 ","pages":"Article 128040"},"PeriodicalIF":1.7,"publicationDate":"2024-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143183756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characterization of phosphorus deactivation in epitaxial Si:P and surpassing 1021 cm−3 carrier concentration","authors":"D. Abdula,&nbsp;Y. Chiu,&nbsp;C.K. Miskin,&nbsp;A.T. Demos","doi":"10.1016/j.jcrysgro.2024.128046","DOIUrl":"10.1016/j.jcrysgro.2024.128046","url":null,"abstract":"<div><div>Deactivation behavior of epitaxial phosphorus-doped silicon, Si:P, was analyzed using a combination of Hall effect measurement and high-resolution X-ray diffraction. Processing at two different temperatures provided the ability to determine when the deactivation mechanism transitions from thermally-driven to primarily dopant-density driven. For &lt; 500 °C growth temperature, a minimum resistivity of 0.258 ± 0.003 mΩ-cm was observed at (2.88 ± 0.02)% total P with active carrier concentration, <em>n</em>, of (7.18 ± 0.09) × 10²⁰ cm⁻³ equating to (50.1 ± 1.9)% active dopant. In contrast, maximum <em>n</em> = (7.76 ± 0.09) × 10²⁰ cm⁻³ was seen at (4.32 ± 0.02)% P. For &lt; 400 °C growth temperature, a minimum resistivity of 0.214 ± 0.002 mΩ-cm was measured at (2.97 ± 0.02)% P with <em>n</em> = (1.01 ± 0.01) × 10²¹ cm⁻³ which is (67.9 ± 1.7)% active dopant. Maximum <em>n</em> = (1.09 ± 0.02) × 10²¹ cm⁻³ was at (4.11 ± 0.02)% P, again different than resistivity minimum. Lower temperature processing pushed the active dopant amount for maximum <em>n</em> from (35.7 ± 1.6)% to (53.0 ± 1.9)%, at nearly identical %P, meaning deactivation is indeed inhibited. This benefit appears to dissipate at ∼ 5.5 % P, based on converging resistivity and active dopant dependences, indicating the onset of dopant-density driven deactivation. Growth at &lt; 400 °C also provided near-unity (96.0 ± 2.2)% active dopant [where <em>n</em> = (7.51 ± 0.07) × 10²⁰ cm⁻³] at (1.57 ± 0.02)% P giving 0.247 ± 0.003 mΩ-cm resistivity. Both ionized and non-ionized (inactive) dopants were shown to influence mobility, with the latter coming on at ∼ 50 % inactive dopant and causing a maximum decrease of ∼ 7 cm²/V-s with the %P range considered here. Threshold and maximum were both independent of growth temperature. These results have implications on Si:P optimization for contact versus for bulk resistivity as well as lowering both resistivities overall.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"652 ","pages":"Article 128046"},"PeriodicalIF":1.7,"publicationDate":"2024-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143183748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Broadband InGaAsP/InP NIR LEDs based on multiple photon-recycling photoluminescent layers","authors":"Zoltán Szabó,&nbsp;Barbara Beiler,&nbsp;Zsófia Baji","doi":"10.1016/j.jcrysgro.2024.128045","DOIUrl":"10.1016/j.jcrysgro.2024.128045","url":null,"abstract":"<div><div>Infrared spectroscopy is a very popular measurement technique presently, especially in healthcare, agriculture, and food industry. NIR LEDs have high efficiencies, but narrow wavelengths, therefore they are suitable for measurements at a certain wavelength. GaInAsP/InP is an ideal material system for the fabrication of double heterostructure LED devices with tuneable emission wavelengths. The present study addresses the need when a broader emission-peak is preferred for spectroscopic applications. An LED structure is covered by photoluminescent layers grown epitaxially by liquid phase epitaxy. The primary light of the active layer excites the further layers which emit photoluminescent radiation. The partly transmitted primary and the secondary lights together result in a broader spectrum. This work presents NIR LEDs with wide emission spectra which cover the entire NIR range based on multiple photon-recycling photoluminescent layers. This type of NIR light source could replace the incandescent light sources on account of their small dimensions, high efficiency, and low power consumption, which is critical in small, handheld NIR spectroscopy devices.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"652 ","pages":"Article 128045"},"PeriodicalIF":1.7,"publicationDate":"2024-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143182880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of chromium precursor on stoichiometries of Cr3S4 and Cr2S3 nanoparticles by chemical aggregation reactions","authors":"R. Leyva Ontiveros ,&nbsp;R. Ramírez-Bon ,&nbsp;H.A. Pineda-León ,&nbsp;M.C. Acosta-Enríquez ,&nbsp;A. Carrillo-Castillo ,&nbsp;A. de León ,&nbsp;S.J. Castillo","doi":"10.1016/j.jcrysgro.2024.128044","DOIUrl":"10.1016/j.jcrysgro.2024.128044","url":null,"abstract":"<div><div>We developed two formulations to synthesize chromium sulfide nanoparticles to analyze the effect of the chromium precursors to obtain different stoichiometries. Most works do not report samples with entangled stoichiometries. In this paper, we got a pure sample and an entangled one through slightly different formulations. There is very few information on the Raman and XPS data for chromium sulfide compounds. In this work, we support the available information through the lattice determination, indexing the diffraction patterns. The method,<!--> <em>chemical aggregation reactions</em>, that we utilized to prepare our material is straightforward. Besides, it is associated with short lengths of time, low costs, the number of instruments needed, precursors easy to manage and room temperature. Both formulations to elaborate the nanoparticles mentioned above differ just in the step related to the appropriate selection of the chromium source. The characterization techniques transmission electron microscopy (TEM), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS), UV–Vis spectroscopy, were implemented to identify our nanoparticles’ chemical composition and optical properties. The first formulation leaded to an entangled composite of monoclinic Cr₃S₄ and rhombohedral Cr₂S₃ (Cr₃S₄/Cr₂S₃). The second formulation yielded a pure stoichiometry corresponding to hexagonal Cr₂S₃. The direct band gaps were found using the Tauc theory; the results were 2.73 eV for Cr₃S₄/Cr₂S₃ and 2.67 eV for Cr₂S₃. In addition, optical responses of transmission, absorption, reflection, and refractive index are presented.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"652 ","pages":"Article 128044"},"PeriodicalIF":1.7,"publicationDate":"2024-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143182881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Facet growth kinetics and diameter fluctuations in molten zone Si crystal growth","authors":"Christian Kranert ,&nbsp;Paul Wimmer ,&nbsp;Jochen Friedrich ,&nbsp;Thierry Duffar","doi":"10.1016/j.jcrysgro.2024.128024","DOIUrl":"10.1016/j.jcrysgro.2024.128024","url":null,"abstract":"<div><div>Several &lt;111&gt; oriented silicon single crystals have been grown in ellipsoid mirror furnaces at various growth rates by the zone melting technique. The crystals grown with initial necking show no dislocation and large (111) facets perpendicular to the growth axis. Measurements of facet growth rate and undercooling allowed selecting the applicable kinetic coefficients in case of facets growing through 2D-seed nucleation mode. Crystals grown without necking exhibit dislocations and show smaller stable facets, allowing the determination of the kinetic coefficient in case of dislocation-driven facet growth. Among these crystals, those grown at lower velocity, with a lower temperature gradient, show a decrease of dislocation density with length of the crystal and an increase of facet diameter fluctuations. A geometric model of dislocation-facet interaction suggests that these diameter fluctuations are due to the effect of individual dislocations crossing the facet, which increase when the dislocation density decreases.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"652 ","pages":"Article 128024"},"PeriodicalIF":1.7,"publicationDate":"2024-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143182891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}