Journal of Crystal Growth最新文献_第5页

Atomic surface structure of antiphase domains in heteroepitaxial GaP films grown on arsenic-terminated Si(100) 砷端Si上生长的异质外延GaP薄膜反相畴的原子表面结构

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2026-02-15 Epub Date: 2025-12-02 DOI: 10.1016/j.jcrysgro.2025.128450

P. Kleinschmidt , D. Bratek , M. Nandy , J. Koch , V.S. Chejarla , A. Beyer , K.D. Hanke , K. Volz , A. Paszuk , T. Hannappel

{"title":"Atomic surface structure of antiphase domains in heteroepitaxial GaP films grown on arsenic-terminated Si(100)","authors":"P. Kleinschmidt , D. Bratek , M. Nandy , J. Koch , V.S. Chejarla , A. Beyer , K.D. Hanke , K. Volz , A. Paszuk , T. Hannappel","doi":"10.1016/j.jcrysgro.2025.128450","DOIUrl":"10.1016/j.jcrysgro.2025.128450","url":null,"abstract":"<div><div>The epitaxy of III-V semiconductors on Si(100) is typically associated with the formation of antiphase domains within the III-V layer. The associated antiphase boundaries constitute planar defects that must be avoided in high-performance devices, or at least prevented from extending into the active region of the device. Here, we present top-view, atomically resolved STM images of thin GaP layers deposited by metalorganic chemical vapor deposition on an As-containing Si(100) surface. We verify the atomic surface structure, clearly identify phase and antiphase at the surface, and provide high-resolution images of the antiphase boundaries. We show that these boundaries are far from ideal, and are associated with kinks, trenches, and many defects, in particular at the corners of the boundaries. Our work underlines the detrimental effect of the antiphase boundaries, and therefore the necessity for the underlying Si(100) substrate to be prepared with a near-single-domain surface to avoid antiphase domains in the III-V layer.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"677 ","pages":"Article 128450"},"PeriodicalIF":2.0,"publicationDate":"2026-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145750043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermomechanical stresses of 6.2 cm-diameter Czochralski-grown radiopure Li2MoO4 crystals 6.2 cm直径czochralski生长的放射性Li2MoO4晶体的热力学应力

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2026-02-15 Epub Date: 2025-12-16 DOI: 10.1016/j.jcrysgro.2025.128464

C. Stelian , P. de Marcillac , A. Giuliani , M. Velazquez

{"title":"Thermomechanical stresses of 6.2 cm-diameter Czochralski-grown radiopure Li2MoO4 crystals","authors":"C. Stelian , P. de Marcillac , A. Giuliani , M. Velazquez","doi":"10.1016/j.jcrysgro.2025.128464","DOIUrl":"10.1016/j.jcrysgro.2025.128464","url":null,"abstract":"<div><div>Crucial experiments to discover the origin of the neutrino mass and the nature of neutrino particles require the detection of extremely rare events, such as the neutrinoless double beta (<em>0ν2β</em>) decay. The core of large-scale heat-scintillation cryogenic bolometers used for the detection of such rare events will be made of hundreds of 45 mm-edge cubic Li<sub>2</sub>MoO<sub>4</sub> (LMO) single crystals. LMO crystals of diameters close to 65 mm were grown in an optimized Czochralski (Cz) furnace configuration. Cutting a 62 mm diameter ingot revealed a radial cleavage at the top of the crystal, and a small crack located at the periphery of the bottom part of the crystal. Numerical modeling of heat transfer, convection and thermal stress in this configuration was applied to investigate these small defects, which anyway have no impact on the quality of the useful part of the ingot. Numerical results show that the thermal stress is smaller than the critical value of the tensile stress (7 MPa) over the entire crystal longitudinal section, except for a small region located at the periphery of the bottom part of the ingot. This explains the small crack observed after cutting. Numerical calculations performed for a shoulder angle greater than that in the experimental case show that the average values of the thermal stress are not significantly changed.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"677 ","pages":"Article 128464"},"PeriodicalIF":2.0,"publicationDate":"2026-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145789271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Growth and stress control of large-diameter barium fluoride crystals with heavy yttrium doping concentration for radiation detection 辐射检测用重钇掺杂大直径氟化钡晶体的生长和应力控制

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2026-02-15 Epub Date: 2025-12-13 DOI: 10.1016/j.jcrysgro.2025.128460

Jing Zhang , Jiahe Li , Xiang Li , Jiawei Xu , Lili Zheng , Junfeng Chen

{"title":"Growth and stress control of large-diameter barium fluoride crystals with heavy yttrium doping concentration for radiation detection","authors":"Jing Zhang , Jiahe Li , Xiang Li , Jiawei Xu , Lili Zheng , Junfeng Chen","doi":"10.1016/j.jcrysgro.2025.128460","DOIUrl":"10.1016/j.jcrysgro.2025.128460","url":null,"abstract":"<div><div>Barium fluoride (BaF<sub>2</sub>) crystal has received significant attention in high-energy physics due to its unique sub-ns ultrafast scintillation component. Previous studies have demonstrated that slow scintillation component in BaF<sub>2</sub> crystal can be effectively suppressed through yttrium (Y) doping. Although crack-free growth of 10 at%Y-doped BaF<sub>2</sub> crystals with cross-sections up to 35 × 35 mm<sup>2</sup> have been achieved, high-concentration Y-doped BaF<sub>2</sub> crystals with large size are difficult to obtain due to cracking arising from thermal stress and mechanical stress caused by segregation of Y. This study aims to address cracking issues in Y-doped BaF<sub>2</sub> crystals through integrated thermophysical analysis and experimental parameter optimization. Upon comparing the thermophysical properties of undoped and Y-doped BaF<sub>2</sub> crystals, the impact of a high concentration of Y-doping was studied quantitatively, thereby establishing a criterion for thermal field tolerance. Significantly, the critical strain threshold was determined based on experimental cracking results, from which optimized parameter boundaries were derived. Through iterative experimental refinement, we successfully achieved crack-free growth of 4-inch BaF<sub>2</sub> crystals with 15 at%Y doping. The grown crystal exhibits good optical homogeneity, maintaining > 90% transmittance across most of the visible spectrum. This parameter optimization framework demonstrates transferability for large-scale doped crystal growth systems.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"677 ","pages":"Article 128460"},"PeriodicalIF":2.0,"publicationDate":"2026-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145789274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Crystallographic integration of highly preferred orientated peptization derived nano anatase TiO2 纳米锐钛矿TiO2的结晶学集成

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2026-02-15 Epub Date: 2025-12-15 DOI: 10.1016/j.jcrysgro.2025.128462

Fariha Zannat, Md. Ashraful Alam, Raton Kumar Bishwas, Shirin Akter Jahan

{"title":"Crystallographic integration of highly preferred orientated peptization derived nano anatase TiO2","authors":"Fariha Zannat, Md. Ashraful Alam, Raton Kumar Bishwas, Shirin Akter Jahan","doi":"10.1016/j.jcrysgro.2025.128462","DOIUrl":"10.1016/j.jcrysgro.2025.128462","url":null,"abstract":"<div><div>Highly crystalline anatase TiO<sub>2</sub> nanoparticles (NPs) with preferred (101) orientation were synthesized via peptization method using titanium isopropoxide (TTIP) as the precursor. The time dependent growth of anatase crystals was examined using X-ray diffraction (XRD) and transmission electron microscopy (TEM) contributing nano beam diffraction (NBD) analysis. Average crystallite size values obtained from several standard evaluation methods verified the successful formation of nanocrystalline anatase. The crystallite size of the synthesized NPs decreases with increasing the interval of time. Rietveld refinement analysis confirmed that the NPs consisted entirely of 100 % anatase phase. The anatase exhibited a high crystallinity of 74.26 %. Enhanced crystallinity, together with the obtained crystallographic parameters, confirms the successful synthesis of highly crystalline anatase with superior properties relative to the standard material. The NPs exhibited a band gap of 3.0651 eV, indicating enhanced photocatalytic activity. A zeta potential of 75.59 mV confirmed excellent colloidal stability, while TGA revealed an activation energy (E<sub>a</sub>) of 53.22 kJ/mole, reflecting highly reactive species. NBD revealed that the atoms were preferentially oriented along the (101) crystal plane, exhibiting bright spots on the diffracted surface and a highly preferred d-spacing of 0.358 nm. The synthesized NPs also demonstrated excellent photocatalytic performance, achieving 97.5 % degradation of crystal violet dye.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"677 ","pages":"Article 128462"},"PeriodicalIF":2.0,"publicationDate":"2026-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145838161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synchrotron X-ray topography investigation on dislocation propagation in heavily arsenic-doped silicon crystal necks 重砷硅晶体颈中位错扩展的同步加速器x射线形貌研究

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2026-02-15 Epub Date: 2025-12-13 DOI: 10.1016/j.jcrysgro.2025.128459

A. Lankinen , T.O. Tuomi , O. Anttila , S. Sintonen , P. Kostamo , P.J. McNally , C. Paulmann

引用次数: 0

Close space physical vapor transport growth of SiC, doped layers and thin crystals SiC、掺杂层和薄晶体的近空间物理气相输运生长

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2026-02-15 Epub Date: 2025-12-19 DOI: 10.1016/j.jcrysgro.2025.128474

Sven Strüber, Lucrezia Tana, Ole Schneider, Cristina Grazzi, Tobias Wagner, Peter Wellmann

引用次数: 0

β-Ga2O3 crystal growth with cold container crucibles: Large-scale oxide crystal growth from cold crucible method 用冷坩埚法生长β-Ga2O3晶体：用冷坩埚法生长大规模氧化物晶体

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2026-02-15 Epub Date: 2025-12-13 DOI: 10.1016/j.jcrysgro.2025.128461

Masanori Kitahara , Taketoshi Tomida , Vladimir Kochurikhin , Gushchina Liudmila , Kei Kamada , Yasuhiro Shoji , Koichi Kakimoto , Akira Yoshikawa

引用次数: 0

Optimizing growth interface shape in CdZnTe single crystal growth using vertical Bridgman method 垂直Bridgman法优化CdZnTe单晶生长界面形状

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2026-02-01 Epub Date: 2025-12-09 DOI: 10.1016/j.jcrysgro.2025.128456

Bing Yan, Weihua Liu, Chang Yu, Pandeng Gao, Tuanjie Liang, Kaifeng Liao, Biru Jiang, Tiantai Wang, Fan Liu, Hongyu Liang, Kun Feng, Li Huang

{"title":"Optimizing growth interface shape in CdZnTe single crystal growth using vertical Bridgman method","authors":"Bing Yan, Weihua Liu, Chang Yu, Pandeng Gao, Tuanjie Liang, Kaifeng Liao, Biru Jiang, Tiantai Wang, Fan Liu, Hongyu Liang, Kun Feng, Li Huang","doi":"10.1016/j.jcrysgro.2025.128456","DOIUrl":"10.1016/j.jcrysgro.2025.128456","url":null,"abstract":"<div><div>CdZnTe (CZT) is an ideal substrate for growing HgCdTe (MCT) epitaxial layers in infrared devices. A convex growth interface is desired but is typically difficult to form during the Bridgman process of CZT crystals owing to their low thermal conductivity. Obtaining high-quality CZT single crystals with high yields remains a challenge. This study proposes a method for achieving a slightly convex interface during the CZT crystal growth process. The presence of the slightly convex interface is confirmed via Zn component mapping calibration. Single crystals were reproducibly obtained using this method, improving the crystal quality of CZT for high-performance device applications. The obtained CZT crystals were characterized via optical microscopy, infrared transmission microscopy, high-resolution X-ray diffraction, X-ray tomography (XRT), and Fourier transform infrared spectroscopy. The etch pit density of (111)-B (tellurium-polar face) CZT sliced wafers was < 4.0 × 10<sup>3</sup> cm<sup>−2</sup>. For the double-grinding wafers, the Te inclusions in the CZT volume of were sparsely distributed, and their sizes could be controlled to < 5 μm. The typical full width at half maximum of the Bragg diffraction peaks was < 18″. A uniform XRT image of (111)-B CZT polished wafers was obtained. The responsivity of the prepared mid-wave 640 × 512 MCT FPA final image was uniform, with no noticeable electro-optical clustering. Additionally, the noise-equivalent temperature difference was measured to be 14.5 mK, indicating the high quality of the as-grown CZT crystals. This study provides useful guidelines for CZT crystals growth and a promising method for reducing the current cost of commercial CZT substrates.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"676 ","pages":"Article 128456"},"PeriodicalIF":2.0,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145733896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Growth of tin-doped Ge crystals: A comparison of impurity segregation behavior with IV element crystals and alloys 掺锡锗晶体的生长：与IV元素晶体和合金的杂质偏析行为比较

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2026-02-01 Epub Date: 2025-12-03 DOI: 10.1016/j.jcrysgro.2025.128452

Ichiro Yonenaga , Toshinori Taishi , Yu Murao , Kaihei Inoue

引用次数: 0

Over two-fold purification efficiency improvement via magnetically controlled directional crystallization of Ga 磁控定向结晶使镓的提纯效率提高了两倍以上

IF 2 4区材料科学

Journal of Crystal Growth Pub Date : 2026-02-01 Epub Date: 2025-11-29 DOI: 10.1016/j.jcrysgro.2025.128449

Zhe Shen, Dewei Xun, Meng Sun, Biao Ding, Zhongze Lin, Tianxiang Zheng, Bangfei Zhou, Yunbo Zhong

{"title":"Over two-fold purification efficiency improvement via magnetically controlled directional crystallization of Ga","authors":"Zhe Shen, Dewei Xun, Meng Sun, Biao Ding, Zhongze Lin, Tianxiang Zheng, Bangfei Zhou, Yunbo Zhong","doi":"10.1016/j.jcrysgro.2025.128449","DOIUrl":"10.1016/j.jcrysgro.2025.128449","url":null,"abstract":"<div><div>The high-purity preparation of gallium (Ga) faces bottlenecks such as low purification efficiency and lengthy processing steps. This study innovatively proposes the introduction of magnetically controlled flow during the directional crystallization purification of Ga. This magnetically controlled technique more than doubles the purification efficiency, achieving a purity of 11.629 ppm in only two passes compared to the 11.843 ppm obtained by the conventional method in six passes. The underlying mechanism for this enhancement lies in the fact that the magnetically controlled flow promotes the migration of impurities at the solidification front, reduces the thickness of the solute boundary layer, and lowers the effective distribution coefficient, thereby significantly increasing purification efficiency. This magnetically controlled purification technique offers a new approach for efficient production of high-purity and even ultra-high-purity Ga, and can be further extended to the purification of other metals.</div><div><strong>Kewwords:</strong> High-purity gallium; Directional crystallization; Magnetically controlled flow; Effective distribution coefficient; Solute boundary layer.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"676 ","pages":"Article 128449"},"PeriodicalIF":2.0,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145682805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0