New pentaborates for pyrolytic boron nitride

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2025-03-24 DOI:10.1016/j.jcrysgro.2025.128160

Bo Li , Weilong Wu , Zifeng Niu , Lu Meng , Haoran Chen , Shijie Ma , Jun Zhang , Wei Tian , Jahangeer Ahmed , Chengchun Tang , Yanming Xue

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Abstract

Direct pyrolysis of specific crystal precursors has long been a favored approach for synthesizing high-quality hexagonal boron nitride (h-BN). In this study, two types of single-crystal borates were identified as effective precursors for direct pyrolysis to h-BN. Single-crystal X-ray diffraction analysis revealed their structures as new pentaborates: [C₄H₁₁N₁₀][B₅O₆(OH)₄] (crystal-I) and [C₂H₅N₄][C₂N₄H₄B₅O₆(OH)₄] (crystal-II). The pyrolysis process and resultant products were thoroughly examined using TG-DTA, FT-IR, SEM,TEM and XRD, providing insights into the mechanism of h-BN formation. Notably, these pentaborates enable the preparation of spherical h-BN with a size ranging from 1μm to tens of micrometers. Crystal-II emerged as a more promising precursor due to its pre-existing dative B←N bonds, which facilitated a higher conversion rate to h-BN.

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新型热解氮化硼五硼酸盐

特定晶体前体的直接热解一直是合成高质量六方氮化硼（h-BN）的首选方法。在本研究中，两种类型的单晶硼酸盐被确定为直接热解生成h-BN的有效前驱体。单晶x射线衍射分析表明，它们的结构为新的五硼酸盐：[C4H11N10][B5O6(OH)4]（晶体i）和[C2H5N4][C2N4H4B5O6(OH)4]（晶体ii）。利用TG-DTA、FT-IR、SEM、TEM和XRD等手段对热解过程和产物进行了深入研究，对h-BN的生成机理进行了深入研究。值得注意的是，这些五硼酸盐可以制备尺寸从1μm到数十微米的球形h-BN。Crystal-II作为一种更有前途的前体，由于其存在的共轭B←N键，促进了更高的h-BN转化率。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.