230 nm electron-beam excited light source with AlGaN/AlN multiple quantum wells on face-to-face annealed sputter-deposited AlN template

IF 1.7 4区 材料科学 Q3 CRYSTALLOGRAPHY
Ryoya Iwase , Ryota Akaike , Hiroki Yasunaga , Takao Nakamura , Masayoshi Nagao , Katsuhisa Murakami , Hideto Miyake
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引用次数: 0

Abstract

We conducted a comprehensive investigation into the optimal architecture of light-emitting devices operating in the 230 nm wavelength band, which were fabricated face-to-face by annealing sputter-deposited AlN templates for electron-beam excitation. The structures and multiple quantum wells were systematically optimized. The present findings revealed that employing AlN as the underlayer and the barrier layers produced significant improvements in surface smoothness and enhanced cathodoluminescence intensity. Moreover, the optimized device was successfully integrated with a graphene-based electron source, facilitating light emission through electron-beam excitation and achieving a power efficiency of 0.16 %. Remarkably, this power efficiency remained stable with increasing injected current from the graphene-based electron source, demonstrating a linear increase in light output without the efficiency droop associated with conventional light-emitting diodes. These results validate the potential of a simplified device structure that eliminates the need for a p-type layer, aiding the development of large-area, high-output light sources within the 230 nm band.
在面对面退火溅射沉积AlN模板上制备了具有AlGaN/AlN多量子阱的230 nm电子束激发光源
我们对工作在230 nm波段的发光器件的最佳结构进行了全面的研究,这些器件是通过退火溅射沉积的AlN模板制备的,用于电子束激发。对结构和多量子阱进行了系统优化。研究结果表明,采用氮化铝作为下层和阻挡层可以显著改善表面光滑度,增强阴极发光强度。此外,优化后的器件成功集成了石墨烯基电子源,通过电子束激发实现了发光,功率效率达到0.16%。值得注意的是,随着石墨烯基电子源注入电流的增加,这种功率效率保持稳定,表明光输出呈线性增加,而没有与传统发光二极管相关的效率下降。这些结果验证了简化器件结构的潜力,该结构消除了对p型层的需求,有助于开发230 nm波段内的大面积高输出光源。
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来源期刊
Journal of Crystal Growth
Journal of Crystal Growth 化学-晶体学
CiteScore
3.60
自引率
11.10%
发文量
373
审稿时长
65 days
期刊介绍: The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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