Luminescence properties of Rb4Li2TiOGe4O12 single crystal grown by high-temperature solution growth

IF 1.7 4区 材料科学 Q3 CRYSTALLOGRAPHY
Tianyu Wang , Chuan Tang , Qian Wu , Wen Li , Zhen Jia , Yuntao Wu , Mingjun Xia
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引用次数: 0

Abstract

A crack-free Rb4Li2TiOGe4O12 (RLTG) bulk crystal with dimensions up to 43 × 42 × 27 mm3 was grown by the high-temperature solution method and investigated for luminescence properties under UV and X-ray excitation for the first time. RLTG crystal displays an exceptional bluish-green photoluminescence peaking at 481 nm with a photoluminescence quantum yield 55.81 %. The fluorescence of the RLTG crystal comes from the isolated distorted TiO5 square pyramids. The light yield of RLTG crystal was measured to be 12,000 photons/MeV under steady-state X-ray excitation, surpassing that of the commercial scintillator Bi4Ge3O12 (BGO).
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来源期刊
Journal of Crystal Growth
Journal of Crystal Growth 化学-晶体学
CiteScore
3.60
自引率
11.10%
发文量
373
审稿时长
65 days
期刊介绍: The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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