Study on the influence of 36-inch hot field heater structure on the oxygen content of Czochralski monocrystalline silicon

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2025-03-14 DOI:10.1016/j.jcrysgro.2025.128144

Duan Xiaochen , Huang Xuguang , Wang Yulong , Chai Chen , Han Qinghui , Ma Haotian , Bai Guijie

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Abstract

CZ method utilizes a quartz crucible to grow solar-grade monocrystalline silicon. The primary component of the quartz crucible is SiO2, which contributes most of the oxygen and negatively impacts the efficiency of solar cells. CGSim numerical simulation software is employed to analyze the effects of heating power, interfacial stress, melt flow, and silicon-oxygen content at varying heights of the main heater. The results indicate that shortening the main heater can increase power, expand the low-temperature region of the melt, and weaken the melt convection along the sides of the crucible, thereby reducing the precipitated oxygen content (from 7.11 × 10^17 atoms/cm³ to 5.85 × 10^17 atoms/cm³, a reduction of 17.7 %). After the addition of a second heater, the crystal oxygen content is further decreased by 8.7 %, with the minimum oxygen content reaching 5.34 × 10^17 atoms/cm³. According to production data, shortening the main heater and incorporating a second heater can lead to a 24.6 % reduction in oxygen content, demonstrating a significant decrease in oxygen levels.

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36寸热场加热器结构对单晶硅氧含量影响的研究

CZ方法利用石英坩埚生长太阳能级单晶硅。石英坩埚的主要成分是SiO2，它贡献了大部分的氧气，并对太阳能电池的效率产生了负面影响。采用CGSim数值模拟软件分析了不同主加热器高度下加热功率、界面应力、熔体流动和硅氧含量的影响。结果表明，缩短主加热器可以增大功率，扩大熔体低温区，减弱熔体沿坩埚两侧的对流，从而降低析出氧含量（从7.11 × 10^17原子/cm3降至5.85 × 10^17原子/cm3，降低17.7%）。加入第二个加热器后，结晶氧含量进一步降低了8.7%，最小氧含量达到5.34 × 10^17原子/cm3。根据生产数据，缩短主加热器并加入第二个加热器可以导致氧气含量降低24.6%，表明氧气水平显着降低。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.