Single crystal growth of 1T-VSe2 by molten salt flux method

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2025-03-07 DOI:10.1016/j.jcrysgro.2025.128135

Muhammed Anees K.T., Souvik Kumar Rana, Abinash Das, Moumita Nandi

{"title":"Single crystal growth of 1T-VSe2 by molten salt flux method","authors":"Muhammed Anees K.T., Souvik Kumar Rana, Abinash Das, Moumita Nandi","doi":"10.1016/j.jcrysgro.2025.128135","DOIUrl":null,"url":null,"abstract":"<div><div>VSe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> is a highly promising van der Waals (vdW) material for applications in electronics, spintronics, and optoelectronics. Here, we report single crystal growth of 1T-VSe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> (octahedral structure) by flux method using eutectic of NaCl/KCl molten salt. The typical size of as-grown VSe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> single crystals is 5 × 4 × 0.1 mm<span><math><msup><mrow></mrow><mrow><mn>3</mn></mrow></msup></math></span>. The elemental composition and homogeneity of the crystals were examined by energy dispersive x-ray spectroscopy, which is consistent with the stoichiometric ratio of VSe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>. The crystallographic [001] direction has been determined by x-ray diffraction. Raman measurement confirms that the octahedral 1T structure of VSe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> has been formed. Temperature-dependent resistivity measurement exhibits a transition around 104 K due to the formation of the charge density wave phase.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"659 ","pages":"Article 128135"},"PeriodicalIF":1.7000,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022024825000831","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}

引用次数: 0

Abstract

VSe

_{2}

is a highly promising van der Waals (vdW) material for applications in electronics, spintronics, and optoelectronics. Here, we report single crystal growth of 1T-VSe

_{2}

(octahedral structure) by flux method using eutectic of NaCl/KCl molten salt. The typical size of as-grown VSe

_{2}

single crystals is 5 × 4 × 0.1 mm

^{3}

. The elemental composition and homogeneity of the crystals were examined by energy dispersive x-ray spectroscopy, which is consistent with the stoichiometric ratio of VSe

_{2}

. The crystallographic [001] direction has been determined by x-ray diffraction. Raman measurement confirms that the octahedral 1T structure of VSe

_{2}

has been formed. Temperature-dependent resistivity measurement exhibits a transition around 104 K due to the formation of the charge density wave phase.

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.