Single crystal growth of 1T-VSe2 by molten salt flux method

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2025-03-07 DOI:10.1016/j.jcrysgro.2025.128135

Muhammed Anees K.T., Souvik Kumar Rana, Abinash Das, Moumita Nandi

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引用次数: 0

Abstract

VSe

_{2}

is a highly promising van der Waals (vdW) material for applications in electronics, spintronics, and optoelectronics. Here, we report single crystal growth of 1T-VSe

_{2}

(octahedral structure) by flux method using eutectic of NaCl/KCl molten salt. The typical size of as-grown VSe

_{2}

single crystals is 5 × 4 × 0.1 mm

^{3}

. The elemental composition and homogeneity of the crystals were examined by energy dispersive x-ray spectroscopy, which is consistent with the stoichiometric ratio of VSe

_{2}

. The crystallographic [001] direction has been determined by x-ray diffraction. Raman measurement confirms that the octahedral 1T structure of VSe

_{2}

has been formed. Temperature-dependent resistivity measurement exhibits a transition around 104 K due to the formation of the charge density wave phase.

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熔盐助熔剂法生长1T-VSe2单晶

VSe2是一种非常有前途的范德华（vdW）材料，应用于电子学、自旋电子学和光电子学。本文报道了用NaCl/KCl熔盐共晶，用通量法生长1T-VSe2（八面体结构）的单晶。生长VSe2单晶的典型尺寸为5 × 4 × 0.1 mm3。能量色散x射线光谱分析了晶体的元素组成和均匀性，结果与VSe2的化学计量比一致。通过x射线衍射确定了晶体学[001]方向。拉曼测量证实了VSe2的八面体1T结构已经形成。温度相关电阻率测量显示，由于电荷密度波相的形成，在104 K左右发生转变。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.