Effect of water-cooled jacket emissivity on the melt-crystal interface and oxygen in the Czochralski silicon crystal growth

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2025-06-06 DOI:10.1016/j.jcrysgro.2025.128282

Zeqi Zhong, Jiancheng Li, Chao Qi, Dengnian Li, Zaoyang Li, Lijun Liu

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Abstract

In the process of monocrystalline silicon growth by Czochralski method, water-cooled jacket has gradually become an important component widely used in the industry to increase the crystal pulling rate. Although increasing the emissivity of the crystal and the heat shield side of the water-cooled jacket can further increase the pulling rate, it will change the flow, heat transfer, melt-crystal interface deformation and oxygen transport, which affects the stable growth and the oxygen content of the silicon crystal. In this study, a global 2D numerical model was established to study the effect of the emissivity of the water-cooled jacket on flow, heat transfer, the deflection and oxygen content of melt-crystal interface. The results show that increasing the emissivity of the crystal side of the water-cooled jacket and reducing the emissivity of the heat shield side can achieve simultaneous control of the deflection and oxygen content of melt-crystal interface. This study provides a theoretical reference for optimizing the water-cooled jacket to achieve a stable low-oxygen growth of silicon crystal.

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水冷套发射率对直克拉拉斯基硅晶体生长中熔晶界面和氧的影响

在克氏法生长单晶硅的过程中，水冷夹套逐渐成为工业上广泛使用的提高拔晶率的重要部件。虽然提高晶体发射率和水冷夹套隔热侧可以进一步提高拉拔速率，但会改变晶体的流动、换热、熔晶界面变形和氧输运，影响硅晶体的稳定生长和氧含量。为了研究水冷夹套发射率对熔晶界面流动、换热、挠度和含氧量的影响，建立了一种全局二维数值模型。结果表明，提高水冷夹套结晶侧的发射率，降低热屏蔽侧的发射率，可以实现对熔晶界面偏转和含氧量的同时控制。该研究为优化水冷套实现硅晶体稳定低氧生长提供了理论参考。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.