Oxygen plasma-assisted pulsed laser deposition of terbium doped Ga2O3 films

IF 2 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2025-07-01 DOI:10.1016/j.jcrysgro.2025.128290

Qixin Guo, Yuki Kawano, Kento Imari, Katsuhiko Saito, Tooru Tanaka

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Abstract

This study presents the growth of terbium (Tb) doped Ga₂O₃ films using oxygen plasma-assisted pulsed laser deposition (PLD). The effects of substrate temperatures, varied from 100 ℃ to 500 ℃, on the structural and optical properties of the films were systematically investigated. X-ray diffraction analysis revealed that the use of oxygen plasma significantly enhances the crystalline quality of (−201)-oriented Ga₂O₃ films compared to those grown by conventional PLD without plasma assistance. Notably, the incorporation of oxygen plasma enabled the formation of crystalline Tb doped Ga₂O₃ at a reduced substrate temperature of 300 °C, ensured more stable growth rates, and enhanced both optical and luminescent properties. These results highlight the potential of plasma-assisted PLD as a viable approach for fabricating high-quality Ga₂O₃ films at low temperatures, paving the way for advanced electronic and optoelectronic devices compatible with conventional Si-based integrated circuits.

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氧等离子体辅助脉冲激光沉积掺铽Ga2O3薄膜

本文研究了利用氧等离子体辅助脉冲激光沉积（PLD）生长铽（Tb）掺杂Ga2O3薄膜。研究了衬底温度（100 ~ 500℃）对薄膜结构和光学性能的影响。x射线衍射分析表明，与没有等离子体辅助的传统PLD生长相比，氧等离子体的使用显著提高了（−201）取向Ga2O3薄膜的结晶质量。值得注意的是，氧等离子体的加入使得在300℃的衬底温度下形成了Tb掺杂Ga2O3晶体，确保了更稳定的生长速率，并增强了光学和发光性能。这些结果突出了等离子体辅助PLD作为在低温下制造高质量Ga2O3薄膜的可行方法的潜力，为与传统si基集成电路兼容的先进电子和光电子器件铺平了道路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.