{"title":"The suppression of volatilization via high pressure during melt crystal growth: Analysis via two models of the optical floating zone","authors":"Scott S. Dossa , Jeffrey J. Derby","doi":"10.1016/j.jcrysgro.2025.128288","DOIUrl":null,"url":null,"abstract":"<div><div>We investigate the role of ambient pressure on volatilization during melt crystal growth using the high-pressure optical floating zone (OFZ) as a prototypical model. Species transport is incorporated into a previously-developed, thermal-capillary model which includes the effects of energy and momentum transport while computing the shape of the zone meniscus, melting front, and solidification front. Results from this model show that pressure monotonically decreases volatilization from the melt zone into the ambient gas and that species transport is both inhibited via diffusion and enhanced via convection as pressure increases. A lumped-parameter model corroborates these findings and clarifies the interaction between diffusion and convection using boundary-layer theory. While increasing pressure always suppresses volatilization, the concurrent strengthening of gas-phase flows with pressure diminishes its effects. For the OFZ system studied here, the evaporative flux of volatile species from melt scales nonlinearly with pressure as <span><math><mrow><msub><mrow><mi>J</mi></mrow><mrow><mi>i</mi></mrow></msub><mo>∼</mo><msup><mrow><mi>P</mi></mrow><mrow><mo>−</mo><mn>2</mn><mo>/</mo><mn>5</mn></mrow></msup></mrow></math></span>, which is greater than the expected scaling of <span><math><mrow><msub><mrow><mi>J</mi></mrow><mrow><mi>i</mi></mrow></msub><mo>∼</mo><msup><mrow><mi>P</mi></mrow><mrow><mo>−</mo><mn>1</mn></mrow></msup></mrow></math></span> when gas-phase convection is unimportant.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"668 ","pages":"Article 128288"},"PeriodicalIF":2.0000,"publicationDate":"2025-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022024825002428","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 0
Abstract
We investigate the role of ambient pressure on volatilization during melt crystal growth using the high-pressure optical floating zone (OFZ) as a prototypical model. Species transport is incorporated into a previously-developed, thermal-capillary model which includes the effects of energy and momentum transport while computing the shape of the zone meniscus, melting front, and solidification front. Results from this model show that pressure monotonically decreases volatilization from the melt zone into the ambient gas and that species transport is both inhibited via diffusion and enhanced via convection as pressure increases. A lumped-parameter model corroborates these findings and clarifies the interaction between diffusion and convection using boundary-layer theory. While increasing pressure always suppresses volatilization, the concurrent strengthening of gas-phase flows with pressure diminishes its effects. For the OFZ system studied here, the evaporative flux of volatile species from melt scales nonlinearly with pressure as , which is greater than the expected scaling of when gas-phase convection is unimportant.
期刊介绍:
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.