D. Sasireka , N. Kavitha , T.Sathis Kumar , L.Bruno Chandrasekar
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引用次数: 0
Abstract
A novel dysprosium-doped zirconium ferrite was prepared by the chemical precipitation method. The doping concentration of dysprosium was set at 0 %, 2 %, and 4 %. The structural properties, such as crystalline size and strain, were examined. The doping tuned the morphology of the nanoparticles. The band gap of the material decreases as the doping of dysprosium increases. The degradation of methylene blue was examined under natural sunlight and 93.2 % degradation efficiency was achieved at 120 min. The doping enhances the degradation efficiency using the zirconium ferrite catalyst. The electrochemical properties of the prepared nanoparticles as electrodes in a supercapacitor were studied using cyclic voltammetry and the galvanostatic charge–discharge technique. The maximum specific capacitance of ∼ 375F/g was observed at the scan rate of 5 mV/s.
期刊介绍:
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.