精细化调整衬底支架对金刚石制备影响的研究

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2025-03-18 DOI:10.1016/j.jcrysgro.2025.128154

J. Weng , J. Liu , X.J. Chen , F. Liu , F.J. Cui , J.H. Wang , L.W. Xiong

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引用次数: 0

摘要

在本工作中，通过改进我们自行开发的MPCVD装置中衬底支架的排列，改善了scd和金刚石膜的生长环境。基板支架的布置由△h控制，△h保持小于3.0 mm。采用多物理模拟和OES技术对衬底支架周围的等离子体进行了系统的研究。最后选择1.5 mm和0.5 mm的△h来制备scd和金刚石膜。通过衬底支架的布置，有效地避免了Mo衬底边缘scd的裂纹和独立金刚石膜的破碎。结果表明，合理选择△h可以提高等离子体的均匀性，从而有效地利用衬底的边缘效应。所得结果为金刚石材料的规模化生产提供了指导。

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Investigation on the effect of refine adjusting substrate holder on the preparation of diamond

In this work, the growth environment for the SCDs and the diamond film are improved by refine the arrangement of the substrate holder in our self-developed MPCVD apparatus. The arrangement of the substrate holder is controlled by the △h which is kept less than 3.0 mm. The plasma around the substrate holder is systematically researched with multi-physical simulation and OES. The △h is finally selected at 1.5 mm and 0.5 mm to prepare SCDs and diamond film. Using the arrangement of the substrate holder, the cracks in the SCDs put at the edge of the Mo substrate and the fragmentation of the freestanding diamond film are effective avoided. The results turn out that the uniformity of the plasma can be enhanced by reasonable selecting the △h, and in this way the edge effect of the substrate can be effectively utilized. The obtained results provide a guidance for the scalable production of diamond material.

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.