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A fully-integrated digital-intensive polar Doherty transmitter 一个完全集成的数字密集型极地多尔蒂发射机
2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2017-06-01 DOI: 10.1109/RFIC.2017.7969051
Yiyu Shen, M. Mehrpoo, M. Hashemi, M. Polushkin, Lei Zhou, M. Acar, R. van Leuken, M. Alavi, L. D. de Vreede
{"title":"A fully-integrated digital-intensive polar Doherty transmitter","authors":"Yiyu Shen, M. Mehrpoo, M. Hashemi, M. Polushkin, Lei Zhou, M. Acar, R. van Leuken, M. Alavi, L. D. de Vreede","doi":"10.1109/RFIC.2017.7969051","DOIUrl":"https://doi.org/10.1109/RFIC.2017.7969051","url":null,"abstract":"This paper presents an advanced 2.3–2.8 GHz fully-integrated digital-intensive polar Doherty transmitter realized in 40nm standard CMOS. The proposed architecture comprises CORDIC, digital delay aligners, interpolators, digital pre-distortion (DPD) circuitry in combination with frequency-agile wideband phase modulators followed by the digital main and peak power amplifier (PA) operating in quasi-load insensitive class-E using an on-chip power combiner. At 2.5 GHz, its maximum output power is +21.4 dBm. Drain efficiency is 49.4% at peak power, and 33.7% at 6-dB power back-off. Applying DPD for a 20-MHz 64-QAM signal, the measured EVM is better than −30 dB while the average drain efficiency is 24%.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124296489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
A 365nW −61.5 dBm sensitivity, 1.875 cm2 2.4 GHz wake-up receiver with rectifier-antenna co-design for passive gain 一个365nW−61.5 dBm灵敏度，1.875 cm2 2.4 GHz唤醒接收机，整流天线协同设计无源增益
2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2017-06-01 DOI: 10.1109/RFIC.2017.7969047
Kamala Raghavan Sadagopan, Jian Kang, Sanket Jain, Y. Ramadass, A. Natarajan
{"title":"A 365nW −61.5 dBm sensitivity, 1.875 cm2 2.4 GHz wake-up receiver with rectifier-antenna co-design for passive gain","authors":"Kamala Raghavan Sadagopan, Jian Kang, Sanket Jain, Y. Ramadass, A. Natarajan","doi":"10.1109/RFIC.2017.7969047","DOIUrl":"https://doi.org/10.1109/RFIC.2017.7969047","url":null,"abstract":"A 2.4 GHz 365nW wake-up receiver (WuRX) with RF envelope detection using rectifier-antenna co-design for passive voltage gain and RF filtering is presented. The RF frequency-tunable WuRX uses a programmable 32-bit OOK wake-up signature, achieving sensitivity of −61.5dBm for 2.5 kb/s without any off-chip matching components between IC and antenna. RF filtering in the high-Q rectifier-antenna interface results in 10−3 BER even with interferer-to-carrier ratio of 19.1 dB for CW blocker at 3MHz offset. The 65-nm CMOS WuRX IC occupies 1.1mm2, while the WuRX (including antenna) occupies 1.875cm2.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131449823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 31
Validation of a functional principle for a broadband millimeter-wave power detection structure in a recent BiCMOS technology 最新BiCMOS技术中宽带毫米波功率检测结构的功能原理验证
2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2017-06-01 DOI: 10.1109/RFIC.2017.7969024
F. Trenz, R. Weigel, D. Kissinger
{"title":"Validation of a functional principle for a broadband millimeter-wave power detection structure in a recent BiCMOS technology","authors":"F. Trenz, R. Weigel, D. Kissinger","doi":"10.1109/RFIC.2017.7969024","DOIUrl":"https://doi.org/10.1109/RFIC.2017.7969024","url":null,"abstract":"In this paper, a functional principle for a broadband thermal detector suited for a monolithical integration is shown. Two tantalum load resistors are heated by an input signal, while the temperature at a fixed distance is recorded on chip with a differential temperature sensing bridge. An integrated differential to single-ended stage amplifies the bridges differential voltage and provides an output voltage proportional to the input power of the detector. The thermal resistance and capacitance between the load resistor and the sensing cell act as a low pass filter in the electrical regime. Based on this concept, a detector chip has been designed, which has been analyzed in thermal simulations. The realized detector has been characterized on-chip and bonded to a microwave substrate for a system performance estimation. Its input impedance is tuned to 50 Ohms and measured matching is better than −15 dB from 150MHz to 110 GHz. With a low supply voltage of 1.5V and its active area of around 80×36µm2, the detector is suitable for an integrated power measurement solution.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133764036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 195 GHz single-transistor fundamental VCO with 15.3% DC-to-RF efficiency, 4.5 mW output power, phase noise FoM of −197 dBc/Hz and 1.1% tuning range in a 55 nm SiGe process 一种195 GHz单晶体管基频压控振荡器，具有15.3%直流到射频效率，4.5 mW输出功率，相位噪声FoM为- 197 dBc/Hz，在55 nm SiGe工艺中具有1.1%的调谐范围
2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2017-06-01 DOI: 10.1109/RFIC.2017.7969040
Hamid Khatibi, Somayeh Khiyabani, A. Cathelin, E. Afshari
{"title":"A 195 GHz single-transistor fundamental VCO with 15.3% DC-to-RF efficiency, 4.5 mW output power, phase noise FoM of −197 dBc/Hz and 1.1% tuning range in a 55 nm SiGe process","authors":"Hamid Khatibi, Somayeh Khiyabani, A. Cathelin, E. Afshari","doi":"10.1109/RFIC.2017.7969040","DOIUrl":"https://doi.org/10.1109/RFIC.2017.7969040","url":null,"abstract":"A novel approach to design efficient high-output-power fundamental oscillators close to the ƒmax of the employed process is presented. The idea is based on shaping and optimizing the maximally efficient power gain (GME) of the circuit using a pair of internal/external feedback mechanisms. Solving a constrained optimization problem, an optimum pair of passive feedback network is designed to achieve the highest maximally efficient power gain in order to increase the output power and thence the DC-to-RF efficiency. A 195 GHz fundamental oscillator is designed in a 55 nm SiGe process (ƒmax ≃ 340 GHz), which achieves a significantly higher DC-to-RF efficiency (15.3%) among all reported oscillators working above ƒmax/3 of their active devices. The oscillator generates a peak power of 4.5 mW (6.5 dBm) with the best phase noise of −82.3 dBc/Hz and the best FoM of −197 dBc/Hz measured at 100 KHz offset frequency, which is the best phase noise and FoM among all CMOS/SiGe mm-Wave oscillators. The proposed optimization-based method takes into account PVT variations as well as modeling errors of all components in the design process to guarantee the functionality of the fabricated circuit.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127701337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
A 1–30 GHz 3-bit vector modulator based on ultra-wideband IQ-generation for MIMO-radar-systems in SiGe BiCMOS 基于超宽带iq生成的1 - 30ghz 3位矢量调制器在SiGe BiCMOS中用于mimo -雷达系统
2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2017-06-01 DOI: 10.1109/RFIC.2017.7969077
B. Welp, A. Meusling, K. Aufinger, N. Pohl
{"title":"A 1–30 GHz 3-bit vector modulator based on ultra-wideband IQ-generation for MIMO-radar-systems in SiGe BiCMOS","authors":"B. Welp, A. Meusling, K. Aufinger, N. Pohl","doi":"10.1109/RFIC.2017.7969077","DOIUrl":"https://doi.org/10.1109/RFIC.2017.7969077","url":null,"abstract":"MIMO phased array radar systems benefit from beamforming in order to increase system dynamic and detection range. Therefore, an ultra-wideband IQ signal generation concept for driving a vector adder, which produces the desired phase shift in each channel of a MIMO phased array radar system, has been developed. The classic concept to generate wideband quadrature signals that uses a frequency doubler and a static frequency divider brings a 0°/180° phase uncertainty at the dividers outputs which makes this concept useless when using multiple TX-channels at once like in beamforming MIMO phased array radars. Therefore, the classical concept has been enhanced with two possible solutions which are presented in this work. The novel concepts are able to operate from 1–30 GHz.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129497945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
An ultra-wideband harmonic radiator with a tuning range of 62GHz (28.3%) at 220GHz 一种超宽带谐波辐射器，在220GHz时调谐范围为62GHz (28.3%)
2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2017-06-01 DOI: 10.1109/RFIC.2017.7969043
A. Mostajeran, E. Afshari
{"title":"An ultra-wideband harmonic radiator with a tuning range of 62GHz (28.3%) at 220GHz","authors":"A. Mostajeran, E. Afshari","doi":"10.1109/RFIC.2017.7969043","DOIUrl":"https://doi.org/10.1109/RFIC.2017.7969043","url":null,"abstract":"An ultra-wideband mm-wave voltage controlled oscillator (VCO) is presented. By utilizing an optimum design of the passives embedding around the core transistor in a Colpitts structure, the VCO tuning range is enhanced. The impact of DC bias on the tuning bandwidth is discussed. The generated second harmonic is efficiently extracted and radiated using a wideband slot antenna. The chip is fabricated in a 55nm BiCMOS process. A state-of-the-art tuning bandwidth of 62.1GHz (28.3%) at a center frequency of 219.6GHz is achieved. With a measured peak radiated power of −3.7dBm, a DC to radiated power efficiency of 0.52% is obtained. To the best of our knowledge, this is the largest VCO bandwidth at mm-wave frequencies compared to the state of the art.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117275920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Low power highly linear band-pass/band-stop filter for 2–4 GHz with less than 1% of fractional bandwidth in 0.13 µm CMOS technology 低功耗高线性带通/带阻滤波器，用于2-4 GHz，带宽小于1%，采用0.13µm CMOS技术
2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2017-06-01 DOI: 10.1109/RFIC.2017.7969075
L. Mohammadi, Kwang-Jin Koh
{"title":"Low power highly linear band-pass/band-stop filter for 2–4 GHz with less than 1% of fractional bandwidth in 0.13 µm CMOS technology","authors":"L. Mohammadi, Kwang-Jin Koh","doi":"10.1109/RFIC.2017.7969075","DOIUrl":"https://doi.org/10.1109/RFIC.2017.7969075","url":null,"abstract":"A low power highly linear active filter supporting both band-pass and band-stop modes is implemented in 0.13µm CMOS. The frequency tunable (2–4GHz) active filter utilizes a linearized Q-boosting network and a liner varactor control scheme to mitigate linearity degradation when increasing filter Q. The BPF tolerates blockers to +16dBm 1 dB desentesization. In BPF mode, typical Q-tuning ranges 5–250, NF and IP<inf>−1dB</inf> are 4∼5.2dB and −6∼+3dBm, respectively, resulting in a peak DR of 170 dB·Hz. In BSF mode, NF ranges 4∼4.8dB and IP<inf>−1dB</inf> is −1.8∼0dBm at 2.5–4GHz. Typical current consumption is 14–19 mA from 2 V supply. Chip size is 0.35 mm<sup>2</sup>.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131578287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A 335µW −72dBm receiver for FSK back-channel embedded in 5.8GHz Wi-Fi OFDM packets 一个335µW−72dBm的FSK反向信道接收器，嵌入在5.8GHz Wi-Fi OFDM数据包中
2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2017-06-01 DOI: 10.1109/RFIC.2017.7969046
Jaeho Im, Hun-Seok Kim, D. Wentzloff
{"title":"A 335µW −72dBm receiver for FSK back-channel embedded in 5.8GHz Wi-Fi OFDM packets","authors":"Jaeho Im, Hun-Seok Kim, D. Wentzloff","doi":"10.1109/RFIC.2017.7969046","DOIUrl":"https://doi.org/10.1109/RFIC.2017.7969046","url":null,"abstract":"An ULP back-channel receiver is presented that demodulates binary a FSK back-channel signal embedded in 5.8GHz IEEE 802.11a Wi-Fi OFDM packets. The architecture of the back-channel receiver employs a two-step down-conversion where the first mixing stage downconverts using the 3rd harmonic of the LO for power efficiency. The LP-65nm CMOS receiver consumes 335µW with a sensitivity of −72dBm at a BER of 10−3 and data-rate of 31.25kb/s. The radio uses a balun and a 250kHz reference crystal as external components. The receiver uses a 1V supply voltage for analog blocks, and 0.85V for digital blocks including the LO and FLL.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"31 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113991980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
A current-efficient wideband cellular RF receiver for multi-band inter- and intra-band carrier aggregation using 14nm FinFET CMOS 采用14nm FinFET CMOS的多频带间和频带内载波聚合的电流高效宽带蜂窝射频接收器
2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2017-06-01 DOI: 10.1109/RFIC.2017.7969053
Youngmin Kim, Pilsung Jang, Taehwan Jin, Jaeseung Lee, Heeseon Shin, Suseob Ahn, Jun-Hwan Bae, Junghwan Han, Seungchan Heo, T. Cho
{"title":"A current-efficient wideband cellular RF receiver for multi-band inter- and intra-band carrier aggregation using 14nm FinFET CMOS","authors":"Youngmin Kim, Pilsung Jang, Taehwan Jin, Jaeseung Lee, Heeseon Shin, Suseob Ahn, Jun-Hwan Bae, Junghwan Han, Seungchan Heo, T. Cho","doi":"10.1109/RFIC.2017.7969053","DOIUrl":"https://doi.org/10.1109/RFIC.2017.7969053","url":null,"abstract":"A wideband cellular RF receiver for multi-band carrier aggregation employing a current-efficient wideband low noise amplifier and a frequency-band switchable transformer is demonstrated in a 14nm FinFET CMOS technology. The proposed wideband low-noise amplifier can support multiple-channel RF signals for intra-band carrier aggregation with high performance and low DC current consumption. Moreover, the frequency-band switchable transformer is used to support a size-efficient receiver up to 5 carrier components carrier aggregation. The receiver operates at frequencies between 0.6 to 2.7 GHz. The receiver has conversion gain more than 62 dB and noise figure less than 5 dB at all carrier aggregation combinations.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"200 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114751325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
A 200µm × 200µm × 100µm, 63nW, 2.4GHz injectable fully-monolithic wireless bio-sensing system 一个200µm × 200µm × 100µm, 63nW, 2.4GHz可注射全单片无线生物传感系统
2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2017-06-01 DOI: 10.1109/RFIC.2017.7969066
S. O'Driscoll, S. Korhummel, P. Cong, Y. Zou, K. Sankaragomathi, J. Zhu, T. Deyle, A. Dastgheib, B. Lu, M. Tierney, J. Shao, C. Gutierrez, S. Jones, Huanfen Yao
{"title":"A 200µm × 200µm × 100µm, 63nW, 2.4GHz injectable fully-monolithic wireless bio-sensing system","authors":"S. O'Driscoll, S. Korhummel, P. Cong, Y. Zou, K. Sankaragomathi, J. Zhu, T. Deyle, A. Dastgheib, B. Lu, M. Tierney, J. Shao, C. Gutierrez, S. Jones, Huanfen Yao","doi":"10.1109/RFIC.2017.7969066","DOIUrl":"https://doi.org/10.1109/RFIC.2017.7969066","url":null,"abstract":"A wireless system-on-chip with integrated antenna, power harvesting and biosensors is presented that is small enough, 200µm × 200µm × 100µm, to allow painless injection. Small device size is enabled by: a 13µm × 20µm 1nA current reference; optical clock recovery; low voltage inverting dc-dc to enable use of higher quantum efficiency diodes; on-chip resonant 2.4GHz antenna; and array scanning reader. In-vivo power and data transfer is demonstrated and linear glucose concentration recordings reported.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117159055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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