Youngmin Kim, Pilsung Jang, Taehwan Jin, Jaeseung Lee, Heeseon Shin, Suseob Ahn, Jun-Hwan Bae, Junghwan Han, Seungchan Heo, T. Cho
{"title":"A current-efficient wideband cellular RF receiver for multi-band inter- and intra-band carrier aggregation using 14nm FinFET CMOS","authors":"Youngmin Kim, Pilsung Jang, Taehwan Jin, Jaeseung Lee, Heeseon Shin, Suseob Ahn, Jun-Hwan Bae, Junghwan Han, Seungchan Heo, T. Cho","doi":"10.1109/RFIC.2017.7969053","DOIUrl":null,"url":null,"abstract":"A wideband cellular RF receiver for multi-band carrier aggregation employing a current-efficient wideband low noise amplifier and a frequency-band switchable transformer is demonstrated in a 14nm FinFET CMOS technology. The proposed wideband low-noise amplifier can support multiple-channel RF signals for intra-band carrier aggregation with high performance and low DC current consumption. Moreover, the frequency-band switchable transformer is used to support a size-efficient receiver up to 5 carrier components carrier aggregation. The receiver operates at frequencies between 0.6 to 2.7 GHz. The receiver has conversion gain more than 62 dB and noise figure less than 5 dB at all carrier aggregation combinations.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"200 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2017.7969053","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
A wideband cellular RF receiver for multi-band carrier aggregation employing a current-efficient wideband low noise amplifier and a frequency-band switchable transformer is demonstrated in a 14nm FinFET CMOS technology. The proposed wideband low-noise amplifier can support multiple-channel RF signals for intra-band carrier aggregation with high performance and low DC current consumption. Moreover, the frequency-band switchable transformer is used to support a size-efficient receiver up to 5 carrier components carrier aggregation. The receiver operates at frequencies between 0.6 to 2.7 GHz. The receiver has conversion gain more than 62 dB and noise figure less than 5 dB at all carrier aggregation combinations.