Low power highly linear band-pass/band-stop filter for 2–4 GHz with less than 1% of fractional bandwidth in 0.13 µm CMOS technology

Abstract

A low power highly linear active filter supporting both band-pass and band-stop modes is implemented in 0.13µm CMOS. The frequency tunable (2–4GHz) active filter utilizes a linearized Q-boosting network and a liner varactor control scheme to mitigate linearity degradation when increasing filter Q. The BPF tolerates blockers to +16dBm 1 dB desentesization. In BPF mode, typical Q-tuning ranges 5–250, NF and IP−1dB are 4∼5.2dB and −6∼+3dBm, respectively, resulting in a peak DR of 170 dB·Hz. In BSF mode, NF ranges 4∼4.8dB and IP−1dB is −1.8∼0dBm at 2.5–4GHz. Typical current consumption is 14–19 mA from 2 V supply. Chip size is 0.35 mm².