{"title":"低功耗高线性带通/带阻滤波器,用于2-4 GHz,带宽小于1%,采用0.13µm CMOS技术","authors":"L. Mohammadi, Kwang-Jin Koh","doi":"10.1109/RFIC.2017.7969075","DOIUrl":null,"url":null,"abstract":"A low power highly linear active filter supporting both band-pass and band-stop modes is implemented in 0.13µm CMOS. The frequency tunable (2–4GHz) active filter utilizes a linearized Q-boosting network and a liner varactor control scheme to mitigate linearity degradation when increasing filter Q. The BPF tolerates blockers to +16dBm 1 dB desentesization. In BPF mode, typical Q-tuning ranges 5–250, NF and IP<inf>−1dB</inf> are 4∼5.2dB and −6∼+3dBm, respectively, resulting in a peak DR of 170 dB·Hz. In BSF mode, NF ranges 4∼4.8dB and IP<inf>−1dB</inf> is −1.8∼0dBm at 2.5–4GHz. Typical current consumption is 14–19 mA from 2 V supply. Chip size is 0.35 mm<sup>2</sup>.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Low power highly linear band-pass/band-stop filter for 2–4 GHz with less than 1% of fractional bandwidth in 0.13 µm CMOS technology\",\"authors\":\"L. Mohammadi, Kwang-Jin Koh\",\"doi\":\"10.1109/RFIC.2017.7969075\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low power highly linear active filter supporting both band-pass and band-stop modes is implemented in 0.13µm CMOS. The frequency tunable (2–4GHz) active filter utilizes a linearized Q-boosting network and a liner varactor control scheme to mitigate linearity degradation when increasing filter Q. The BPF tolerates blockers to +16dBm 1 dB desentesization. In BPF mode, typical Q-tuning ranges 5–250, NF and IP<inf>−1dB</inf> are 4∼5.2dB and −6∼+3dBm, respectively, resulting in a peak DR of 170 dB·Hz. In BSF mode, NF ranges 4∼4.8dB and IP<inf>−1dB</inf> is −1.8∼0dBm at 2.5–4GHz. Typical current consumption is 14–19 mA from 2 V supply. Chip size is 0.35 mm<sup>2</sup>.\",\"PeriodicalId\":349922,\"journal\":{\"name\":\"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"volume\":\"103 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2017.7969075\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2017.7969075","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low power highly linear band-pass/band-stop filter for 2–4 GHz with less than 1% of fractional bandwidth in 0.13 µm CMOS technology
A low power highly linear active filter supporting both band-pass and band-stop modes is implemented in 0.13µm CMOS. The frequency tunable (2–4GHz) active filter utilizes a linearized Q-boosting network and a liner varactor control scheme to mitigate linearity degradation when increasing filter Q. The BPF tolerates blockers to +16dBm 1 dB desentesization. In BPF mode, typical Q-tuning ranges 5–250, NF and IP−1dB are 4∼5.2dB and −6∼+3dBm, respectively, resulting in a peak DR of 170 dB·Hz. In BSF mode, NF ranges 4∼4.8dB and IP−1dB is −1.8∼0dBm at 2.5–4GHz. Typical current consumption is 14–19 mA from 2 V supply. Chip size is 0.35 mm2.