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2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)最新文献

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Full field and full tensor stress metrology for flexible electronics, packaging, and optoelectronic applications: AM: Advanced metrology 用于柔性电子，封装和光电子应用的全场和全张量应力测量:AM:先进的计量
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373193
W. Walecki, Wei-Chun Hung
{"title":"Full field and full tensor stress metrology for flexible electronics, packaging, and optoelectronic applications: AM: Advanced metrology","authors":"W. Walecki, Wei-Chun Hung","doi":"10.1109/ASMC.2018.8373193","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373193","url":null,"abstract":"We describe the system for measurement of the stress tensor in polyimide (PI) substrates for flexible electronic application. System uses photo-elastic effects and was used for measurement of real life PI coated with conductive layers used for optoelectronic applications and reference bare substrates. Tool allows measurements with resolution better than 1 MPa, and covers entire range up-to mechanical failure of PI films. And can be readily integrated in roll to roll applications. The same tool gives promise to be used for the metrology of stress in other materials such as SiN, and use in mainstream semiconductor manufacturing when used on backend passivation PI films.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"200 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114382903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Anode passivation mitigation in ultra thick metal plating 超厚金属镀层阳极钝化的减缓
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373175
Mark Rovereto, A. Fiacco
{"title":"Anode passivation mitigation in ultra thick metal plating","authors":"Mark Rovereto, A. Fiacco","doi":"10.1109/ASMC.2018.8373175","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373175","url":null,"abstract":"In IC manufacturing, ultra thick metal (UTM) plating poses significant challenges for the hardware. The plating tool is subject to operating at high current density for extended periods of time to fill UTM features and provide enough overburden for CMP. The anode is vulnerable to passivation at high currents typically found in the final plating step. The passivation results in rising resistance ultimately leading to a tool fault. Various hardware settings are explored supported with equipment trace data. Ultimately it was found that increasing fresh bath feed to the anode mitigates the problem.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116629793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Characterization of sub-10 nm filter cleanliness by electrophoretic purification and analysis 通过电泳纯化和分析表征10 nm以下过滤器清洁度
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373186
Makonnen Payne, R. Varanasi, Glen W. Wildermuth, Arthur J. Ackermann
{"title":"Characterization of sub-10 nm filter cleanliness by electrophoretic purification and analysis","authors":"Makonnen Payne, R. Varanasi, Glen W. Wildermuth, Arthur J. Ackermann","doi":"10.1109/ASMC.2018.8373186","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373186","url":null,"abstract":"The cleanliness and particle removal requirements on filtration for the semiconductor industry continue to increase in order to keep pace with the development of sub-10nm devices. However, there has been a lack of available instrumentation to directly measure the particles and low levels of \"killer\" defects that are detrimental to final device function. To address this issue, an electrophoretic particle capture device has been used in order to test its ability to capture and characterize sub-10 nm particles. Using an electrode, a variable electric field is applied to a process stream that results in the capture and subsequent release of particles. The release of particle creates a measurable current that can be correlated to the amount of contamination in a system. In this case we apply the technique to the evaluation of a cleaning method for next generation filtration products developed specifically for the microelectronics industry. We are able to demonstrate that the cleaning method used has a significant impact on the cleanliness of the filter and that the new technique has the ability to effectively characterize its state of cleanliness.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132250253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Micro bump height derivation control with dynamic sizing patterning 具有动态尺寸图案的微凸起高度派生控制
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373141
C. Liu, J. H. Chen, Y. Hsu, M. Tsai, C. Hung, R. Wang, C. S. Liu, T. Pan, C. S. Chen, K. Liu, Harry Ku
{"title":"Micro bump height derivation control with dynamic sizing patterning","authors":"C. Liu, J. H. Chen, Y. Hsu, M. Tsai, C. Hung, R. Wang, C. S. Liu, T. Pan, C. S. Chen, K. Liu, Harry Ku","doi":"10.1109/ASMC.2018.8373141","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373141","url":null,"abstract":"Ubump is the key element for die-to-die stacking. However, the adoption of ubump will encounter higher cold joint risk than flip chip bump due to less solder volume and symmetry ubump pattern of stacking dies. In this study, the phenomenon of ubump height distribution across the die is analyzed. The mechanism of ubump height variation is discussed, and the approach for cold joint risk mitigation is demonstrated. The experiment result indicated 20% ubump height variation is achieved with dynamic sizing patterning.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125011236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The long journey from standardisation to full automation of a mature 200 mm fab 成熟的200mm晶圆厂从标准化到完全自动化的漫长旅程
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373214
H. Heinrich, A. Deutschländer
{"title":"The long journey from standardisation to full automation of a mature 200 mm fab","authors":"H. Heinrich, A. Deutschländer","doi":"10.1109/ASMC.2018.8373214","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373214","url":null,"abstract":"This paper describes our long journey from the first standardization projects to support a fully automated workflow to three complex automation hardware projects and will include the learnings about the change management within a running fab for all departments. In the end you will see a fully automated running 200 mm fab with similar productivity key performance indicators (KPI) as a standard automated 300 mm fab today, except the wafer size. We developed our general \"Automation Principles\" for all Infineon frontend and backend sites and start training courses for management, engineers and operators.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125226500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Computational fluid dynamics modelling for refining component design: AEM: Advanced equipment and material processes 精炼部件设计的计算流体动力学建模:AEM:先进设备和材料工艺
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373200
J. Geiger, R. Aliev, Howard Base, Joel Rozga, M. Ibraham
{"title":"Computational fluid dynamics modelling for refining component design: AEM: Advanced equipment and material processes","authors":"J. Geiger, R. Aliev, Howard Base, Joel Rozga, M. Ibraham","doi":"10.1109/ASMC.2018.8373200","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373200","url":null,"abstract":"The importance of Computational Fluid Dynamic (CFD) modelling will be demonstrated for refining component design. Improving the flow dynamics within components can reduce the pressure required to establish flow, eliminate eddy flows, eliminate zero flow locations and establish uniform laminar flow or turbulent flow. Reducing the system back pressure allows for smaller pumps and less energy to establish and maintain flow (GF). Eliminating eddy flows and zero flow locations will improve process control (APC), reduce particulates generation (CFM), reduce degradation of components (ER) and improve equipment reliability (ER). The elimination of eddy flows can reduce erosion of components such as 0-rings. The exclusion of zero flow locations within a chemical heater will eliminate overheating and reduce degradation of chemistry. Improving the thermodynamics within components can reduce degradation of chemistry (CFM) and improve the uniformity of thermal characteristic within a component (APC) resulting in decreased thermal variations of the chemistry (YE).","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129109051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Application of scatterometry-based machine learning to control multiple electron beam lithography: AM: Advanced metrology 基于散射测量的机器学习在控制多电子束光刻中的应用:AM:先进的计量学
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373222
N. Figueiro, Francisco Sanchez, R. Koret, Michael Shifrin, Yoav Etzioni, S. Wolfling, M. Sendelbach, Y. Blancquaert, Thibault Labbaye, G. Rademaker, J. Pradelles, L. Mourier, Stéphane Rey, L. Pain
{"title":"Application of scatterometry-based machine learning to control multiple electron beam lithography: AM: Advanced metrology","authors":"N. Figueiro, Francisco Sanchez, R. Koret, Michael Shifrin, Yoav Etzioni, S. Wolfling, M. Sendelbach, Y. Blancquaert, Thibault Labbaye, G. Rademaker, J. Pradelles, L. Mourier, Stéphane Rey, L. Pain","doi":"10.1109/ASMC.2018.8373222","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373222","url":null,"abstract":"The evaluation of scatterometry and machine learning for the monitoring of intended critical dimension (CD) variations within scatterometry targets is presented. Such variations mimic non-uniformities potentially caused by massively parallel e-beam Maskless Lithography (ML2). Although previous results [1] demonstrate that traditional model-based scatter-ometry can properly quantify these within-target variations, the current work shows that the application of scatterometry-based machine learning complements the model-based scatterometry results. While model-based scatterometry can provide information about structure profile, which can be used to detect parameter shifts even in the absence of a reference, machine learning provides superb correlation to a defined reference.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124292468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Gross substrate defects caused by thermal gradients in high temperature furnace processes 高温炉工艺中由热梯度引起的基板缺陷
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373217
F. Khatkhatay, Satish Singh, Stewart Wenner, L. Perrymore, D. Acharya, C. Chacon, Amit Gupta
{"title":"Gross substrate defects caused by thermal gradients in high temperature furnace processes","authors":"F. Khatkhatay, Satish Singh, Stewart Wenner, L. Perrymore, D. Acharya, C. Chacon, Amit Gupta","doi":"10.1109/ASMC.2018.8373217","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373217","url":null,"abstract":"High temperature anneals are required for densification of oxide-gap fill shallow trench isolation structures. A major concern in these processes is wafer deformation and substrate damage, which raises reliability concerns. The corresponding defects, like surface particles, seen on the wafer front-side through inline monitoring may not necessarily be indicative of substrate damage. More extensive study and partitioning are needed to characterize and recognize the defect source and mechanism. This case presented in this work is an example of the investigation and sourcing of front-side defects caused by thermal gradients between wafer back side contact points and the hot furnace environment.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130812792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optimization of wet clean and its cost effectiveness in dual Damascene 14 nm BEOL 双Damascene 14nm BEOL的湿式清洁优化及其成本效益
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373155
Asha Sharma, Jacob Bulaga, Srishti Agrawal, R. Srivastava, M. Gogna, Sunil K. Singh, Silas Scott
{"title":"Optimization of wet clean and its cost effectiveness in dual Damascene 14 nm BEOL","authors":"Asha Sharma, Jacob Bulaga, Srishti Agrawal, R. Srivastava, M. Gogna, Sunil K. Singh, Silas Scott","doi":"10.1109/ASMC.2018.8373155","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373155","url":null,"abstract":"The purpose of this paper is to study the effects of post etch residue cleaning process on Via first dual Damascene scheme for BEOL on 14 nm Technology. Wet clean process was optimized using different chemicals, their formulations and processing times to address the impact on POR critical dimensions, ULK stability, organic residue removal capability, via resistance performance, and electromigration lifetime. In order to visualize the equivalent cleaning process with reduced chemical cost for HVM implementation of wet cleans changes, the cost evaluations are focused. The study suggests that cost of the ownership for wet cleans process could be significantly reduced while maintaining the similar particle removal efficiency.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114718294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Manufacturing application study of CdZnTe wafers using automated X-ray metrology CdZnTe晶圆的自动x射线测量制造应用研究
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373142
W. She, L. Q. Zhou, Q. Bo, R. Bytheway, O. Whear, P. Gin
{"title":"Manufacturing application study of CdZnTe wafers using automated X-ray metrology","authors":"W. She, L. Q. Zhou, Q. Bo, R. Bytheway, O. Whear, P. Gin","doi":"10.1109/ASMC.2018.8373142","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373142","url":null,"abstract":"Digital X-ray diffraction imaging (XRDI) and high-resolution X-ray diffraction (HRXRD) are used to analyse defects in a non-destructive way on commercially made (111) CdZnTe substrates. The X-ray tools automatically aligned, measured and analysed the samples. The XRDI images show clear differences between the CdZnTe substrates which correspond to high and low yield. HRXRD rocking curve data correlates with the presence of the defects seen in XRDI images. These results suggest that X-ray metrology is an essential tool for the production monitoring of CdZnTe substrates in an automated environment.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116913363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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