具有动态尺寸图案的微凸起高度派生控制

2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI:10.1109/ASMC.2018.8373141

C. Liu, J. H. Chen, Y. Hsu, M. Tsai, C. Hung, R. Wang, C. S. Liu, T. Pan, C. S. Chen, K. Liu, Harry Ku

{"title":"具有动态尺寸图案的微凸起高度派生控制","authors":"C. Liu, J. H. Chen, Y. Hsu, M. Tsai, C. Hung, R. Wang, C. S. Liu, T. Pan, C. S. Chen, K. Liu, Harry Ku","doi":"10.1109/ASMC.2018.8373141","DOIUrl":null,"url":null,"abstract":"Ubump is the key element for die-to-die stacking. However, the adoption of ubump will encounter higher cold joint risk than flip chip bump due to less solder volume and symmetry ubump pattern of stacking dies. In this study, the phenomenon of ubump height distribution across the die is analyzed. The mechanism of ubump height variation is discussed, and the approach for cold joint risk mitigation is demonstrated. The experiment result indicated 20% ubump height variation is achieved with dynamic sizing patterning.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"87 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Micro bump height derivation control with dynamic sizing patterning\",\"authors\":\"C. Liu, J. H. Chen, Y. Hsu, M. Tsai, C. Hung, R. Wang, C. S. Liu, T. Pan, C. S. Chen, K. Liu, Harry Ku\",\"doi\":\"10.1109/ASMC.2018.8373141\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ubump is the key element for die-to-die stacking. However, the adoption of ubump will encounter higher cold joint risk than flip chip bump due to less solder volume and symmetry ubump pattern of stacking dies. In this study, the phenomenon of ubump height distribution across the die is analyzed. The mechanism of ubump height variation is discussed, and the approach for cold joint risk mitigation is demonstrated. The experiment result indicated 20% ubump height variation is achieved with dynamic sizing patterning.\",\"PeriodicalId\":349004,\"journal\":{\"name\":\"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)\",\"volume\":\"87 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASMC.2018.8373141\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC.2018.8373141","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

凹凸是模对模堆叠的关键元素。但由于焊料体积较小，且堆垛模具凹凸模式对称，采用凹凸方式冷接风险高于倒装凸模。本文分析了凹模凸度分布现象。讨论了凹凸高度变化的机理，论证了降低冷接头风险的方法。实验结果表明，采用动态尺寸模式可以实现20%的凸起高度变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Micro bump height derivation control with dynamic sizing patterning

Ubump is the key element for die-to-die stacking. However, the adoption of ubump will encounter higher cold joint risk than flip chip bump due to less solder volume and symmetry ubump pattern of stacking dies. In this study, the phenomenon of ubump height distribution across the die is analyzed. The mechanism of ubump height variation is discussed, and the approach for cold joint risk mitigation is demonstrated. The experiment result indicated 20% ubump height variation is achieved with dynamic sizing patterning.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

自引率

0.00%

发文量