2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)最新文献

Heterogranular multivariate analytics for detecting and controlling the root causes of the mismatching machines in semiconductor manufacturing 半导体制造中不匹配机器的根源检测与控制的异粒度多元分析

2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-30 DOI: 10.1109/ASMC.2018.8373159

Aabir Chouichi, J. Blue, C. Yugma, F. Pasqualini

引用次数: 2

A multi-purpose operational capacity and production planning tool 一个多用途的操作能力和生产计划工具

2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-30 DOI: 10.1109/ASMC.2018.8373203

Quentin Christ, S. Dauzére-Pérés, Guillaume Lepelletier, P. Vialletelle

引用次数: 3

Enabling 5G — A substrate material perspective: AEM, ET/ID 实现5G -基板材料视角:AEM, ET/ID

2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373174

I. Radu, E. Desbonnets, M. Sellier, C. Didier

引用次数: 2

Particle reduction in high temperature sulfuric acid using PTFE membrane filter and low pulsation bellows pump 采用PTFE膜过滤器和低脉动波纹管泵对高温硫酸进行颗粒还原

2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373148

T. Takakura, K. Tokuno, S. Tsuzuki, K. Yamazaki, Ai Tomotoshi, Kazukiyo Teshima

{"title":"Particle reduction in high temperature sulfuric acid using PTFE membrane filter and low pulsation bellows pump","authors":"T. Takakura, K. Tokuno, S. Tsuzuki, K. Yamazaki, Ai Tomotoshi, Kazukiyo Teshima","doi":"10.1109/ASMC.2018.8373148","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373148","url":null,"abstract":"In order to reduce particles in the chemicals used for the semiconductor wafer cleaning processes, it is important to remove generated particles by filtration technology as well as to reduce particle generation from each part of the cleaning tool. We applied a newly developed bellows pump with low pulsation to 90 °C sulfuric acid, and evaluated the effect of the pulsation on the particle level downstream of the pump and particle removal efficiency of 5 nm-rated PTFE membrane filters in the chemical. Pressure pulsation behavior was compared between a conventional bellows pump and the low pulsation pump, and it was confirmed that the low pulsation pump effectively reduced the peak-to-peak value of pressure fluctuation. In addition, the particle level downstream of the pump drastically decreased for the low pulsation pump compared to the conventional pump. On the other hand, the results of particle challenge tests indicated that the filters' particle removal efficiency was unchanged regardless of the pump used. As a result, the particle level downstream of the filter when using the low pulsation pump became lower compared to that using the conventional pump. In conclusion, the low pulsation pump and the 5 nm-rated PTFE membrane filter are a good combination to effectively reduce particles in 90 °C sulfuric acid.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126726626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Micro-photoluminescence imaging of dislocation generation in 0.18μm power semiconductor devices with deep trenches 0.18μm深沟槽功率半导体器件位错产生的微光致发光成像

2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373187

B. Greenwood, J. Gambino, Y. Watanabe, L. Jastrzebski, G. Nadudvari, D. Cseh, L. Roszol, G. Molnár, I. Lajtos

引用次数: 2

Method of problem solving to diagnose high particle failures due to unique rotation stopping position: CFM: Contamination free manufacturing 由于独特的旋转停止位置，诊断高颗粒故障的问题解决方法:CFM:无污染制造

2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373172

Jessica Gruss-Gifford, T. Haigh, P. Hall, J. Wynne, John Grassucci, D. O'Meara, Joshua Prendergast, Kyle Dwyer, Paul T. Higgins

{"title":"Method of problem solving to diagnose high particle failures due to unique rotation stopping position: CFM: Contamination free manufacturing","authors":"Jessica Gruss-Gifford, T. Haigh, P. Hall, J. Wynne, John Grassucci, D. O'Meara, Joshua Prendergast, Kyle Dwyer, Paul T. Higgins","doi":"10.1109/ASMC.2018.8373172","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373172","url":null,"abstract":"Particle defects in the form of foreign material (FM) are a common occurrence in semiconductor manufacturing. This work discusses the strategies used to detect the source of FM particles in a room temperature oxide furnace. FM particles were measured during the 215 Å oxide recipe qualification and showed counts as high 603 particles, exceeding the limit of 130 particles. Common sources of FM particles such as hardware contamination and process recipe conditions were ruled out as the root cause. It was discovered that the rotation stop position of the boat during deposition for the 215 Å recipe put the pedestal alignment pin (attached to the elevator) in front of the backfill N2 injector during the backfill sequence of the recipe. The high flow of 30 slm during the backfill caused the pin to vibrate and produce particles. The probability of stopping at this position for a given recipe is 1 out of 360. The final solution was to make all recipes stop at a home position to guarantee the pin does not stop in front of the N2 injector.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121879874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A novel high-resolution XRD apparatus for patterned epitaxial films in a 50pm pad area with a convergent micro X-ray beam 一种新颖的高分辨率x射线衍射仪，用于在50pm的衬垫区域中使用会聚微x射线束进行图像化外延膜的分析

2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373149

Y. Ito, H. Motono, K. Omote, K. Ogata, S. Yoshihara, N. Matsushima

{"title":"A novel high-resolution XRD apparatus for patterned epitaxial films in a 50pm pad area with a convergent micro X-ray beam","authors":"Y. Ito, H. Motono, K. Omote, K. Ogata, S. Yoshihara, N. Matsushima","doi":"10.1109/ASMC.2018.8373149","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373149","url":null,"abstract":"A novel high-resolution X-ray diffraction (HR-XRD) apparatus for patterned epitaxial thin films has been developed using a convergent micro X-ray beam and a 2D detector. The micro-spot and high-flux (6 × 107 photons/s) X-ray beam was achieved by using a hybrid mirror that consists of a bent crystal and a multilayer mirror and enabled measurement of patterned film in a 50 µm square (pad) area. We demonstrated rocking curve (RC) measurements of a Si(1−x)Gex epitaxial thin film (x was 13.5% and thickness was 50nm) and calculated Ge concentration, thickness, strain, and stress based on the measured results. We obtained precision (3c) of Ge concentration of 0.10% by 100 s and 0.27% by 10 s X-ray exposure time by the analysis. We also carried out reciprocal space mapping (RSM) of the Si(1−x)Gex and we obtained that Ge concentration of 13.38% using RSM data, whereas 13.46% using RC measurement data. We confirmed that the HR-XRD tool enabled short time measurement and making it appropriate for in-line inspection of Si(1−x)Gex and other thin crystalline films on patterned wafers.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129526263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ring oscillator yield learning methodologies for CMOS technology research 环形振荡器良率学习方法用于CMOS技术研究

2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373160

V. Chan, D. Lea, M. Bergendahl, G. Karve, T. Levin, C. Yeung, D. Guo

引用次数: 2

STI HARP gap-fill thickness uniformity improvement for 14nm nodes 改进14nm节点的STI HARP补隙厚度均匀性

2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373207

Minrui Wang, Hui-Jae Kim, Yang Bum Lee, Francis Fonda, J. Lansford, Jim Martiniano, Harold Carter

引用次数: 0

Liquid-metal-jet X-ray technology for nanoelectronics characterization and metrology 用于纳米电子特性鉴定和计量的液态金属喷射 X 射线技术

2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373176

J. Hållstedt, E. Espes, U. Lundström, B. Hansson

{"title":"Liquid-metal-jet X-ray technology for nanoelectronics characterization and metrology","authors":"J. Hållstedt, E. Espes, U. Lundström, B. Hansson","doi":"10.1109/ASMC.2018.8373176","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373176","url":null,"abstract":"Front end X-ray metrology applications based on diffraction, scattering or fluorescence such as HRXRD, XRR, CD-SAXS or μXRF rely heavily on the x-ray source brightness for metrology throughput and accuracy. Similarly, high end X-ray imaging applications such as X-ray microscopy (XRM) normally applied in the back end of line also share the same fundamental limitation from the x-ray source. Traditional x-ray sources use static or rotating solid anodes and are therefore typically limited in brightness by when the e-beam power density melts the anode. The invention of the liquid-metal-jet technology has recently overcome this limitation by using an anode that is already in the molten state. The unprecedented brightness achievable by MetalJet sources, which is in the range of one order of magnitude above current state-of-the art solid sources, enable these sources to be readily introduced into high-end metrology applications. This communication will review the status of the metal-jet x-ray source technology specifically in terms of stability, lifetime, flux and brightness relating to specific SEMI metrology applications. It will also discuss details of the liquid-metal-jet technology with a focus on scalability and future improvements.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130487184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7