2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)最新文献

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Asymmetric etching profile control during high aspect ratio Plasma etch 高纵横比等离子蚀刻时的不对称蚀刻轮廓控制
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373146
Zusing Yang, Li-Ian Wu, Sheng-Yuan Chang, Yuan-Chieh Chiu, Hong-Ji Lee, N. Lian, Tahone Yang, Kuang-Chao Chen, Chih-Yuan Lu, Hayato Watanabe, Yi-Sheng Cheng, Takao Arase, M. Mori
{"title":"Asymmetric etching profile control during high aspect ratio Plasma etch","authors":"Zusing Yang, Li-Ian Wu, Sheng-Yuan Chang, Yuan-Chieh Chiu, Hong-Ji Lee, N. Lian, Tahone Yang, Kuang-Chao Chen, Chih-Yuan Lu, Hayato Watanabe, Yi-Sheng Cheng, Takao Arase, M. Mori","doi":"10.1109/ASMC.2018.8373146","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373146","url":null,"abstract":"Dependency of asymmetric etched profiles on open-ratio and pattern-size within the wafer was studied in a magnetic Very High Frequency (VHF) Plasma etching system for high aspect-ratio multiple alternating layers of silicon oxide/polysilicon (OP) etching. The etched physical features are sensitive to the overall open ratio on the wafer; the profile sidewalls became bent while the open ratio changed from 8% to 40%. In this study, the profile recovery from a method of design of experiments (DOE) and specific inductively magnetic field applied in the etching system was explored. The resulting etched profile is successfully back to normal on multi-layered OP film stack at 40% of open ratio. Even at next generation node development, the etching based on DOE also demonstrates good shape control on the etched profile which stacked with OP pairs over 3um in thickness in extremely high aspect ratio trench etching.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129116672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Study of titanium nitride underlayer properties and its influence on tungsten growth 氮化钛衬底性能及其对钨生长影响的研究
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373154
S. Pancharatnam, J. Wynne, G. Karve, A. Carr, B. Mendoza, L. White, G. Rodriguez, S. D. Vries, Wei Wang
{"title":"Study of titanium nitride underlayer properties and its influence on tungsten growth","authors":"S. Pancharatnam, J. Wynne, G. Karve, A. Carr, B. Mendoza, L. White, G. Rodriguez, S. D. Vries, Wei Wang","doi":"10.1109/ASMC.2018.8373154","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373154","url":null,"abstract":"The changes in tungsten (W) film growth and resistance are studied using different titanium nitride (TiN) underlayer films. Different precursors and processes used for TiN deposition affect the W growth and film properties. It is important to monitor the changes in incoming TiN resistance as a part of W process qualification. This enables maintaining W process stability and reducing fab downtime due to false fails.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"461 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116296548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Identifying cycle time factors and its relative impact on tools in semi-conductor fab using statistical inferences 利用统计推断确定周期时间因素及其对半导体晶圆厂工具的相对影响
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373190
Atirek Wribhu
{"title":"Identifying cycle time factors and its relative impact on tools in semi-conductor fab using statistical inferences","authors":"Atirek Wribhu","doi":"10.1109/ASMC.2018.8373190","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373190","url":null,"abstract":"This paper discusses a methodology using multiple linear regression as a tool to statistically identify, understand, and infer the factors affecting the wait time component of the tool set in a semi-conductor fab. The regression model is based on least-square estimators. This model can recognize the significant factors affecting the wait times of lots in front of the tool set, and their effect and magnitude. Results from the analysis can be used to set priorities and focus on high magnitude factors. It can also be used to study the interactions between the factors on the wait times.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130247728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
An approach to fuzzy control of target function in consideration of equipment flexibility and workload in semiconductor photo lithography operations 半导体光刻作业中考虑设备灵活性和工作量的目标函数模糊控制方法
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373189
Kuan-Chang Chen, Bacon Tseng, Yu-Chih Wang, Yih-Yi Lee
{"title":"An approach to fuzzy control of target function in consideration of equipment flexibility and workload in semiconductor photo lithography operations","authors":"Kuan-Chang Chen, Bacon Tseng, Yu-Chih Wang, Yih-Yi Lee","doi":"10.1109/ASMC.2018.8373189","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373189","url":null,"abstract":"Cycle-time is an important indicator for semiconductor wafer fabrication. In semiconductor factories, the flow of each wafer contains 300–900 processing steps, in which the most critical layer operation is in the photolithography tools. To achieve the target of cycle time more effectively, accurately modeling dispatching rule for each critical layer becomes more and more important. Existing approaches to rescheduling generally consist of hot lot, process queue time for quality and tool efficiency to maximize tool utilization, which is not enough to operate in a highly dynamic and unpredictable environment. This paper attempts to present a systematic design methodology for fuzzy control of a class of nonlinear systems. An example of a semiconductor wafer fabrication line in Tainan is given. The experimental results demonstrate the effectiveness of the proposed fuzzy control of target function.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132741611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Uncovering chemical quality improvements through a holistic approach to chemical quality management Contamination Free Manufacturing 通过全面的化学质量管理方法发现化学质量的改进
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373143
N. Colligan
{"title":"Uncovering chemical quality improvements through a holistic approach to chemical quality management Contamination Free Manufacturing","authors":"N. Colligan","doi":"10.1109/ASMC.2018.8373143","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373143","url":null,"abstract":"This paper focuses on a holistic approach to monitoring particles in ultra-pure chemicals from supplier all the way to the wafer surface. As critical dimensions shrink, this understanding will become very critical for cleaning equipment, processes, and the chemical delivery systems that supply them. Advancing technology in particle monitoring capabilities have made it possible to measure liquid particle counts of similar dimensions to wafer particle metrology, allowing the opportunity of a correlation of the two to be made. This paper presents examples of opportunities for particle improvement in all aspects of the supply chain, from supplier to point of use. Because of the complexity of these systems, there is further opportunity for particle monitoring to complete the correlation of liquid particle counts to wafer particle levels, and ultimately wafer yield.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127835515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Requirements for first-time-right response in advanced manufacturing 先进制造中对首次正确响应的要求
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373198
Boyd Finlay, Niels Rackwitz, Brian Conerney, Eric Warren, David Erdmann, K. Stoddard, A. Weber, T. Scanlon
{"title":"Requirements for first-time-right response in advanced manufacturing","authors":"Boyd Finlay, Niels Rackwitz, Brian Conerney, Eric Warren, David Erdmann, K. Stoddard, A. Weber, T. Scanlon","doi":"10.1109/ASMC.2018.8373198","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373198","url":null,"abstract":"The rapid pace of device scaling in recent years has outrun the ability of today's generation of semiconductor manufacturing equipment control systems to keep up. New device architectures and the materials and processes used to realize them create sources of variability that require better techniques for real-time sensing, filtering, detection, and response. This is not simply a question of faster data collection of the existing equipment variables. In many cases, the data needed to accurately determine the real-time process conditions are not even available in the equipment, so the traditional time-based techniques and endpoint detection methods for controlling recipe execution are not sufficient… rather, these advanced processes are effectively \"flying blind.\" GLOBALFOUNDRIES, a long-time leader in equipment automation and process control, has addressed these issues by integrating specialty sensors into the broader control environment, effectively closing this gap through a variety of advanced sensorization initiatives that supplement the capabilities of the equipment as delivered by the OEMs. The broad expectations regarding the capabilities of manufacturing equipment and the embedded control systems have recently been described in [1]. Specific examples of advanced sensorization use cases and a standards-based implementation approach have been described in [2]. Now that the measurement gaps for a number of key processes have thus been closed (see Tables 1 and 2), new application opportunities exist for leveraging this enhanced visibility into equipment and process behavior. In particular, the ability to achieve \"first-time-right response\" to a wide variety of process conditions is now a practical reality. This paper highlights a number of these applications possibilities enabled by \"unambiguous signals\" on the equipment, and touches on the integration solution used to present these signals seamlessly to the application environment.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"171 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131276807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Applying the Discrete Network Design Problem (DNDP) for designing AMHS layouts in semiconductor fabs 应用离散网络设计问题(DNDP)设计半导体晶圆厂的AMHS布局
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373158
Gerrit M. Kortus, Martin Däumler, T. Schmidt
{"title":"Applying the Discrete Network Design Problem (DNDP) for designing AMHS layouts in semiconductor fabs","authors":"Gerrit M. Kortus, Martin Däumler, T. Schmidt","doi":"10.1109/ASMC.2018.8373158","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373158","url":null,"abstract":"The Discrete Network Design Problem (DNDP) facilitates semi-automated AMHS layout generation in OHT systems. In order to increase fab productivity and mitigate waiting time, AMHS design often intends to reduce transportation time and to avoid congestion. During the time consuming and elaborate layout design process, simulation studies are frequently used for evaluating manually generated layouts. However, in this article an analytical approach is implemented, enabling semi-automated AMHS layout generation with no simulation needed. The applied DNDP is a bi-level mixed-integer optimization model, mostly used in road network design for determining optimal lane additions under consideration of dynamic routing and traffic equilibrium. In this article, the suitability of the DNDP for generating AMHS layouts is assessed. In addition, opportunities and limits of its application are discussed by means of an use case from semi­conductor industry. Furthermore, additions to the formulation of the DNDP model are introduced to attain new functionality and ensure suitability to AMHS layout design. Due to its bi­level and non-convex structure, solving the DNDP in acceptable time is considered to be challenging. Thus, the application of two branch & bound algorithms and three heuristics (local search, tabu search and simulated annealing) for solving the DNDP in AMHS design is examined.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"141 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131903054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Brush cleaning effect on tugnsten voids defect in chemical mechanical polishing: CFM: Contamination free manufacturing 化学机械抛光中钨空洞缺陷的毛刷清洗效果:CFM:无污染制造
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373140
H. Kim, B. Egan, R. Solan, X. Shi, Ja-Hyung Han
{"title":"Brush cleaning effect on tugnsten voids defect in chemical mechanical polishing: CFM: Contamination free manufacturing","authors":"H. Kim, B. Egan, R. Solan, X. Shi, Ja-Hyung Han","doi":"10.1109/ASMC.2018.8373140","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373140","url":null,"abstract":"Tungsten currently drives middle of line (MOL) metal interconnection for semiconductor manufacturing and chemical mechanical polishing (CMP) has become the process standard for controlling tungsten metal interconnection. Although tungsten CMP has brought a lot of advantages in metal interconnection over decades, tungsten void defect propagated by CMP is still an unsolved issue and its impact is further emphasized as device shrinks to sub 14nm nodes. Corrosion, chemically induced, is the leading mechanism of tungsten void associated with polishing slurry chemistry. Slurry induced corrosion has been further interpreted as oxidation and/or chemical dissolution. However, recent defect analysis reveals tungsten voids are strongly correlated with the CMP in-situ cleaning process. This paper provides a new mechanism for the tungsten void defect focused on the brush cleaning module. Experimental data supports that mechanically assisted tribo-corrosion is a dominant mechanism for the formation of tungsten void defect.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133813658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Design systematic weak point discovery optimization 设计系统的弱点发现优化
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373204
Sonal Singh, Panneerselvam Venkatachalam, Julie Lee, Michael M. Daino, B. Saville, C. Lenox
{"title":"Design systematic weak point discovery optimization","authors":"Sonal Singh, Panneerselvam Venkatachalam, Julie Lee, Michael M. Daino, B. Saville, C. Lenox","doi":"10.1109/ASMC.2018.8373204","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373204","url":null,"abstract":"Design systematics have posed significant problems for the development of the latest technology nodes, specifically for logic with design rules of 28nm and below. The faster design systematics are identified, the faster the technology can mature into high volume manufacturing. For advanced design rules, the cost of these systematics increases exponentially with time and thus early detection yields high return on investment. In this paper, we report on a 2× increase in killer defect capture rate for PWQ (Process Window Qualification) inspections by revising the inspection layer. In addition, we found that we can also improve the signal-to-noise ratio (SNR) for single line opens (SLOs) for the actual inline process monitor at post-CMP. This experimentally measured SNR for SLOs was compared to a new computational tool to simulate the expected SNR of DOIs (defects of interest) from broadband plasma (BBP) inspection systems. The reported simulation tool was found to match experimental SNR as a function of the input physical defect model. As the physical defect model more closely matched the actual wafer, the closer the prediction was to the measured SNR. This new tool can aid in finding the best optical state for a given DOI and thus enable detection of the smallest design systematic faster than current methods.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116021325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A wafer map yield model based on deep learning for wafer productivity enhancement 基于深度学习的晶圆图良率模型
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373137
Sung-Ju Jang, Jee-Hyong Lee, Tae-Woo Kim, Jong-Seong Kim, Hyun-Jin Lee, Jong-Bae Lee
{"title":"A wafer map yield model based on deep learning for wafer productivity enhancement","authors":"Sung-Ju Jang, Jee-Hyong Lee, Tae-Woo Kim, Jong-Seong Kim, Hyun-Jin Lee, Jong-Bae Lee","doi":"10.1109/ASMC.2018.8373137","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373137","url":null,"abstract":"In semiconductor manufacturing, evaluating the productivity of wafer maps prior to fabrication for designing an optimal wafer map is one of the most effective solutions for enhancing productivity. However, a yield prediction model is required to accurately evaluate the productivity of wafer maps since the design of a wafer map affects yield. In this paper, we propose a novel yield prediction model based on deep learning algorithms. Our approach exploits spatial relationships among positions of dies, sizes of dies, and die-level yield variations collected from a wafer test. By modeling these spatial features, the accuracy of yield prediction significantly increased. Furthermore, experimental results showed that the proposed yield model and approach help to design a wafer map with higher productivity nearly 13%.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"160 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116238132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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