2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)最新文献

筛选
英文 中文
Opportunities, challenges and use cases of digitization within the semiconductor industry 半导体行业数字化的机遇、挑战和用例
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373173
G. Schneider, S. Keil, G. Luhn
{"title":"Opportunities, challenges and use cases of digitization within the semiconductor industry","authors":"G. Schneider, S. Keil, G. Luhn","doi":"10.1109/ASMC.2018.8373173","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373173","url":null,"abstract":"Over the last years, Infineon Dresden Technologies has continuously been working on offering innovative products and enhancing the productivity of their wafer fabrication areas by increasing fab capacities as well as increasing automation in their 200 and 300 mm wafer manufacturing plants to improve productivity. One of the most important success factors is use of powerful automated material handling systems (AMHS) combined with the digitization of core processes within the whole company. Digitization supports converting a highly automated fab into a \"smart fab\" by horizontal and vertical integration of the internal supply chains. Within this paper, the authors provide an overview of three use cases for continuous improvement of the manufacturing process through use of automation and digitization to enhance the profitability of the semiconductor manufacturing plant.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132524685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Minimally invasive servicing design 微创服务设计
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373219
Carlos Strocchia-rivera
{"title":"Minimally invasive servicing design","authors":"Carlos Strocchia-rivera","doi":"10.1109/ASMC.2018.8373219","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373219","url":null,"abstract":"Minimally invasive surgical techniques have proven themselves for 40 years. Semiconductor metrology equipment manufacturers are advised to adopt these techniques in order to allow maximum productivity from their equipment.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126344387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Inline SEM imaging of buried defects using novel electron detection system: DI: Defect inspection and reduction 使用新型电子检测系统的埋藏缺陷的在线扫描电镜成像:DI:缺陷检测和减少
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373177
Abhinav Jain, J. G. Sheridan, F. Levitov, V. Aristov, Shay Yasharzade, Hoang Nguyen
{"title":"Inline SEM imaging of buried defects using novel electron detection system: DI: Defect inspection and reduction","authors":"Abhinav Jain, J. G. Sheridan, F. Levitov, V. Aristov, Shay Yasharzade, Hoang Nguyen","doi":"10.1109/ASMC.2018.8373177","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373177","url":null,"abstract":"As the semiconductor industry moves to sub 1× nm nodes, with complex 3D structures, high aspect ratio (HAR) features and multiple patterning steps, the ability to detect and characterize defects is becoming increasingly difficult. Defects, located at the bottom of HAR structures or buried in the previous layers, are making the devices vulnerable to failure. It is critical to characterize these defects to understand the failure mechanism, to qualify a new process and for accurate yield prediction. For failure analysis, the defect locations on the wafer are marked and sent for Transmission Electron Microscopy (TEM) imaging, leading to high cycle times, with limitation on number of locations on the wafer. In this paper, we present results from novel backscattered electron (BSE) detection, where inline Scanning Electron Microscopy (SEM) images can provide vital information regarding the failure mechanism in much shorter cycle times, with no limitations on number of locations.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"152 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122543853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A bi-criteria mixed integer linear programming model for load balancing and chemical saving in wafer cleaning processes: IE: Industrial engineering 用于晶圆清洗过程中负载平衡和化学节省的双标准混合整数线性规划模型:工业工程
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373188
S. Pazhani, T. Beeg, Kristopher Kowalczyk, Todd Dietrich
{"title":"A bi-criteria mixed integer linear programming model for load balancing and chemical saving in wafer cleaning processes: IE: Industrial engineering","authors":"S. Pazhani, T. Beeg, Kristopher Kowalczyk, Todd Dietrich","doi":"10.1109/ASMC.2018.8373188","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373188","url":null,"abstract":"Semiconductor manufacturing or wafer fabrication process involves multiple processing steps and is highly re-entrant, where a job may visit an equipment group more than once, at various stages of the product flow. Wafer cleaning process in semiconductor fabrication comprises multiple steps at various stages of the product flow to remove particles and oxidize organic contaminants, using different chemicals. This paper focusses on front-end of the line wafer cleaning steps. We consider J equipment groups which run I clean process steps and uses M different chemicals. Each step is qualified to run on a set of equipment groups and when recipes using different chemical run back to back on a tool-there is a chemical pre-dispense to clean and condition the nozzle. Given today's increasingly cost-conscious and competitive market, this study focuses on balancing loads on the equipment groups and minimize operating cost by reducing chemical pre-dispenses. We propose a bi-criteria mixed integer linear programming model to allocate daily demands to the equipment groups with the objectives of minimizing the maximum utilization and reducing chemical pre-dispenses. We also propose a priority based dispatching algorithm to translate the model output and implement in a dispatching system. Results show that the model reduces chemical pre-dispense resulting in significant cost saving, improved throughput due to cascading, and balanced utilization across the equipment groups.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121026118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Rapid yield ramp using closed loop DFM and overlay process window qualification flow 采用闭环DFM和覆盖工艺窗口确认流程的快速产量坡道
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373192
Michael Wojtowecz, D. Ryan, K. Krishnamoorthy, Nabil Azad, Haizhou Yin, P. Babighian, U. Schroeder, M. Duggan, Panneerselvam Venkatachalam
{"title":"Rapid yield ramp using closed loop DFM and overlay process window qualification flow","authors":"Michael Wojtowecz, D. Ryan, K. Krishnamoorthy, Nabil Azad, Haizhou Yin, P. Babighian, U. Schroeder, M. Duggan, Panneerselvam Venkatachalam","doi":"10.1109/ASMC.2018.8373192","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373192","url":null,"abstract":"At advanced nodes (sub 28nm), it has become a major challenge to design and verify integrated circuits to achieve high yield. The complex interactions of design and manufacturing process need to be bridged by Design for Manufacturability (DFM) / Design for Yield (DFY). With further shrinking of process technology, the on-chip variation worsens for each technology node. As a result, traditional defect detection methodologies also become more challenging. Interlayer and/or overlay driven defects have begun to plague lithography patterning. Traditional Process Window Qualification (PWQ) (focus and dose modulation) alone may not define the true process window. Overlay has become an additional factor to aid in determining the complete process window. DFM brings manufacturing variability awareness into the design to address the yield limiting configurations using pattern matching and recommended rules. In this paper, we propose a closed loop DFM and Overlay Process Window (OPW) qualification flow to identify yield-limiting configurations and address them early in the product yield ramp for faster time-to-market (TTM).","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115228765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Topography hotspot-aware process control metrology cell insertion: DFM: Design for manufacturability 地形热点感知过程控制测量单元插入:DFM:可制造性设计
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373199
M. R. Nishat, Ushasree Katakamsetty, V. Mehrotra, H. Landis, S. Nakagawa, Gazi Huda
{"title":"Topography hotspot-aware process control metrology cell insertion: DFM: Design for manufacturability","authors":"M. R. Nishat, Ushasree Katakamsetty, V. Mehrotra, H. Landis, S. Nakagawa, Gazi Huda","doi":"10.1109/ASMC.2018.8373199","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373199","url":null,"abstract":"A novel Process Control Metrology (PCM) cell placement methodology to improve Depth of Focus (DOF) control in the advanced VLSI design is presented. PCM cells are typically inserted in both FEOL and BEOL chip design layers in order to control mask image size, improve mask alignment, monitor Critical Dimension (CD), and analyze critical process parameters. As process technology scales down, CMP related hotspots, such as Cu pooling and Depth of Focus (DOF) hotspots at high or low topography areas become prominent[1] and need to be detected, analyzed and accommodated for better yield [2][3]. In the new methodology, an intelligent analysis of design drives optimal placement of conventional PCM cells to achieve better DOF control and CMP monitoring.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125104224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Review-SEM image analysis with K-means algorithm: AM: Advanced metrology/DI: Defect inspection
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373221
S. Halder, D. Cerbu, M. Saib, P. Leray
{"title":"Review-SEM image analysis with K-means algorithm: AM: Advanced metrology/DI: Defect inspection","authors":"S. Halder, D. Cerbu, M. Saib, P. Leray","doi":"10.1109/ASMC.2018.8373221","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373221","url":null,"abstract":"With the continuous shrink of technology nodes, lithography becomes more and more challenging. At 20 nm node, double patterning technology (DPT) was the usual way of achieving the fine device structures. For sub-14nm nodes the patterning choices for IDM's lie between SAQP plus EUV block or an EUV based direct patterning approach. As with any new technology adoption, yield ramp at the beginning takes effort. Defect locations identified by optical inspection tools need to be reviewed by review-SEM's to understand exactly which feature is failing in the region flagged by the optical tool. The images grabbed by the review­SEM tool are used for classification but rarely for quantification. The goal of this paper is to see if the thousands of existing review-SEM images can be used for quantification and further analysis. More specifically we address the SEM quantification problem with connected component and K-means cluster analysis algorithms.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121612180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Picosecond ultrasonics: Characterization of single crystal piezoelectric materials for advanced RF filters 皮秒超声:用于先进射频滤波器的单晶压电材料的表征
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373163
C. Hayden, J. Kwon, D. Kim, S. Gibb, R. Mair, J. Dai, X. Zeng, P. Mukundhan
{"title":"Picosecond ultrasonics: Characterization of single crystal piezoelectric materials for advanced RF filters","authors":"C. Hayden, J. Kwon, D. Kim, S. Gibb, R. Mair, J. Dai, X. Zeng, P. Mukundhan","doi":"10.1109/ASMC.2018.8373163","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373163","url":null,"abstract":"Picosecond Ultrasonics (PULSE™) is a rapid, non-contact, non-destructive first principles acoustic metrology technique for in-line metal film thickness measurements. In this paper, we discuss the application of the technique to the measurement of epitaxially grown AlN and AlGaN piezoelectric layers. Since the film is transparent, we analyze the oscillatory component of the signal described as Brillouin oscillations to calculate the longitudinal sound velocity. The additional parameter not only helps characterize the material and improve the accuracy of the reported thickness but also helps in process control. We have shown that by independently calculating the velocity, we are able to detect misprocessing and characterize film quality. Finally, we demonstrate that the PULSE data provides critical thickness measurements for the RF filter stack including individual layer thickness and this allows optimization of filter performance.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126645800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Advanced industrial S/TEM automation and metrology: Boundary of precision 先进工业S/TEM自动化和计量:精度的边界
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373156
Haiyan Tan, Weihao Weng, R. Rai, Chris Kang, L. Dumas, I. Brooks, A. Katnani, Zhenxin Zhong, Chris Hakala, Yinggang Lu, J. Fretwell, Timothy A. Johnson
{"title":"Advanced industrial S/TEM automation and metrology: Boundary of precision","authors":"Haiyan Tan, Weihao Weng, R. Rai, Chris Kang, L. Dumas, I. Brooks, A. Katnani, Zhenxin Zhong, Chris Hakala, Yinggang Lu, J. Fretwell, Timothy A. Johnson","doi":"10.1109/ASMC.2018.8373156","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373156","url":null,"abstract":"Developments in the semiconductor industry are driving the need for new methods to characterize smaller 3D devices in a productive and reproducible way. The automation of sample preparation, TEM imaging, and offline CD metrology is able to provide sample information in the form of both images and quantitative data. In this article, we evaluate the TEM imaging automation workflow in order to optimize the experimental configuration towards better measurement precision and higher throughput. It is found that the top contributor to CD precision is the signal-to-noise ratio of the STEM image, which is determined by the electron flux. We investigated the top 5 most important experimental factors (probe current, image size, dwell time, Drift Corrected Frame integration, and image Field of View) and their interactions for a secondary contributor to CD precision. And we found that the combination of those factors play very minor role as soon as they contribute to the same electron flux. This learning guides us to configure our experiment parameters to optimize the trade-off between measurement precision and throughput.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130970314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Shortest path CD measurement using contour extraction 利用轮廓提取进行最短路径CD测量
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373165
O. Patterson, Bart Seefeldt, Wan-Hsiang Liang, Haokun Hu, Joan Chen, yu-chi Su, Hsiang-Ting Yeh, Pengcheng Zhang
{"title":"Shortest path CD measurement using contour extraction","authors":"O. Patterson, Bart Seefeldt, Wan-Hsiang Liang, Haokun Hu, Joan Chen, yu-chi Su, Hsiang-Ting Yeh, Pengcheng Zhang","doi":"10.1109/ASMC.2018.8373165","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373165","url":null,"abstract":"A new CD measurement methodology providing automated measurement of diagonal CDs using contour extraction with an e-beam inspection tool is presented. The use of E-beam inspection tools to provide quality CD data at a significantly higher throughput than CD SEM tools, using a methodology called CDU, is well established. The higher throughput is the result of larger field of view and greater sample frequency. More recently, the ability to extract contours (the edges of the pattern at the wafer surface) has been developed. Extraction of the shortest path between shapes is a natural extension combining these two features. Shortest path measurement is most interesting when this path is at a diagonal. Two examples which use this capability are shared. The first is for MOL patterning involving multiple masks for a cutting-edge FINFET technology. The second is for BEOL patterning for a cutting-edge fully depleted silicon-on-insulator (FDSOI) technology.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"189 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134513678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信