氮化钛衬底性能及其对钨生长影响的研究

2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI:10.1109/ASMC.2018.8373154

S. Pancharatnam, J. Wynne, G. Karve, A. Carr, B. Mendoza, L. White, G. Rodriguez, S. D. Vries, Wei Wang

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引用次数: 0

摘要

研究了不同氮化钛(TiN)衬底膜对钨(W)薄膜生长和电阻的影响。不同的TiN沉积前驱体和工艺会影响W的生长和薄膜性能。作为W工艺鉴定的一部分，监测输入TiN电阻的变化是很重要的。这可以保持W工艺的稳定性，减少晶圆厂因假故障而停机的时间。

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Study of titanium nitride underlayer properties and its influence on tungsten growth

The changes in tungsten (W) film growth and resistance are studied using different titanium nitride (TiN) underlayer films. Different precursors and processes used for TiN deposition affect the W growth and film properties. It is important to monitor the changes in incoming TiN resistance as a part of W process qualification. This enables maintaining W process stability and reducing fab downtime due to false fails.

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2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

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